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    Method for chemical mechanical planarization of chalcogenide materials
    2.
    发明授权
    Method for chemical mechanical planarization of chalcogenide materials 有权
    硫族化物材料的化学机械平面化方法

    公开(公告)号：US07915071B2

    公开(公告)日：2011-03-29

    申请号：US12193303

    申请日：2008-08-18

    申请人： Junaid Ahmed Siddiqui ,  Saifi Usmani

    发明人： Junaid Ahmed Siddiqui ,  Saifi Usmani

    IPC分类号： H01L21/00

    CPC分类号： C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1683

    摘要： A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The composition and method afford low defect levels (e.g., scratches incurred during polishing) as well as low dishing and local erosion levels on the chalcogenide-containing substrate during CMP processing.

    摘要翻译： 描述了含硫族化物的衬底（例如，含锗/锑（碲（GST））衬底的化学机械平面化的方法和相关组合物）。 组合物和方法在CMP处理期间提供低缺陷水平（例如抛光期间产生的划痕）以及含硫属化物的衬底的低凹陷和局部侵蚀水平。

    Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
    3.
    发明授权
    Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization 失效
    表面改性胶体研磨剂，包括用于化学机械平面化的稳定的双金属表面涂层硅溶胶

    公开(公告)号：US07429338B2

    公开(公告)日：2008-09-30

    申请号：US11487443

    申请日：2006-07-17

    申请人： Junaid Ahmed Siddiqui

    发明人： Junaid Ahmed Siddiqui

    IPC分类号： B44C1/22

    CPC分类号： B24B37/044 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

    摘要： A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stabilizer. The composition can further include a medium containing the abrasive and an oxidizing agent (e.g., hydrogen peroxide), wherein the at least one catalyst is adapted to catalyze oxidation of a substrate by the oxidizing agent. Preferably, the abrasive is alumina, titania, zirconia, germania, silica, ceria and/or mixtures thereof, the stabilizer is B, W and/or Al, and the catalyst is Cu, Fe, Mn, Ti, W and/or V. Both the stabilizer and the catalyst are immobilized on the abrasive surface. The method includes applying the composition to a substrate to be polished, such as substrates containing W, Cu and/or dielectrics.

    摘要翻译： 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 该组合物包括用至少一种稳定剂和至少一种不同于至少一种稳定剂的催化剂改性的表面改性磨料。 组合物还可以包括含有研磨剂和氧化剂（例如过氧化氢）的介质，其中所述至少一种催化剂适于催化由氧化剂氧化底物。 优选地，研磨剂是氧化铝，二氧化钛，氧化锆，氧化锗，二氧化硅，二氧化铈和/或其混合物，稳定剂是B，W和/或Al，催化剂是Cu，Fe，Mn，Ti，W和/或V 稳定剂和催化剂都固定在磨料表面上。 该方法包括将组合物施加到待抛光的基底，例如含有W，Cu和/或电介质的基底。

    Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
    5.
    发明授权
    Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal 有权
    用于金属去除的高选择性的化学机械平面化的组成和相关方法

    公开(公告)号：US07247179B2

    公开(公告)日：2007-07-24

    申请号：US10914113

    申请日：2004-08-09

    申请人： Junaid Ahmed Siddiqui ,  Timothy Frederick Compton

    发明人： Junaid Ahmed Siddiqui ,  Timothy Frederick Compton

    IPC分类号： C09G1/02 ,  C09G1/04

    CPC分类号： H01L21/3212 ,  C09K3/1409 ,  C09K3/1463 ,  Y10T428/259

    摘要： A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

    摘要翻译： 描述了用于化学机械平面化（或其它抛光）的组合物和相关方法。 组合物可以包含研磨剂和分散的杂化有机/无机颗粒。 组合物还可以包含炔化合物。 公开了用于化学机械平面化的两种不同的方法。 在一种方法（方法A）中，该方法中使用的CMP浆料组合物包括研磨剂和分散的杂化有机/无机颗粒。 在另一种方法（方法B）中，该方法中使用的CMP浆料组合物包括研磨剂和炔化合物。 组合物还可以包含氧化剂，在这种情况下，组合物特别适用于金属CMP应用（例如，钨CMP）的相关方法（A和B）。

    Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing
    8.
    发明申请
    Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing 审中-公开
    化学机械抛光过程中调低低K对铜去除率的方法和浆料

    公开(公告)号：US20110165777A1

    公开(公告)日：2011-07-07

    申请号：US13052457

    申请日：2011-03-21

    申请人： Junaid Ahmed Siddiqui ,  Rachel Dianne McConnell ,  Saifi Usmani

    发明人： Junaid Ahmed Siddiqui ,  Rachel Dianne McConnell ,  Saifi Usmani

    IPC分类号： H01L21/304 ,  C09K13/00

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

    摘要： A composition and associated method for the chemical mechanical planarization (CMP) of metal substrates on semiconductor wafers are described. The composition contains a nonionic fluorocarbon surfactant and a per-type oxidizer (e.g., hydrogen peroxide). The composition and associated method are effective in controlling removal rates of low-k films during copper CMP and provide for tune-ability in removal rates of low-k films in relation to removal rates of copper, tantalum, and oxide films.

    摘要翻译： 描述了用于半导体晶片上的金属衬底的化学机械平坦化（CMP）的组合物和相关方法。 该组合物含有非离子型氟碳表面活性剂和每种类型的氧化剂（例如过氧化氢）。 该组合物和相关方法在控制铜CMP期间低k膜的去除速率方面是有效的，并且提供了关于铜，钽和氧化物膜去除率的低k膜去除率的调谐能力。

    Free radical-forming activator attached to solid and used to enhance CMP formulations
    9.
    发明授权
    Free radical-forming activator attached to solid and used to enhance CMP formulations 有权
    自由基形成活化剂连接到固体上并用于增强CMP配方

    公开(公告)号：US07513920B2

    公开(公告)日：2009-04-07

    申请号：US11264027

    申请日：2005-11-02

    申请人： Junaid Ahmed Siddiqui ,  Robert J. Small ,  Daniel Hernandez Castillo

    发明人： Junaid Ahmed Siddiqui ,  Robert J. Small ,  Daniel Hernandez Castillo

    IPC分类号： C09G1/02 ,  C09G1/04

    CPC分类号： C09G1/02 ,  C03C19/00 ,  C09K3/1463 ,  C23F3/04 ,  G11B5/3163 ,  G11B5/3169 ,  H01L21/3212

    摘要： A CMP composition having: a fluid comprising water and at least one oxidizing compound that produces free radicals when contacted with an activator; and a plurality of particles having a surface and comprising at least one activator selected from ions or compounds of Cu, Fe, Mn, Ti, or mixtures thereof disposed on said surface, wherein at least a portion of said surface comprises a stabilizer. Preferred activators are selected from inorganic oxygen-containing compounds of B, W, Al, and P, for example borate, tungstate, aluminate, and phosphate. The activators are preferably ions of Cu or Fe. Surprisingly, as little as 0.2 ppm and 12 ppm of activator is useful, if the activator-containing particles are suspended in the fluid as a slurry. Advantageously, certain organic acids, and especially dihydroxy enolic acids, are included in an amount less than about 4000 ppm. Advantageously, activator is coated onto abrasive particles after the particles have been coated with stabilizer.

    摘要翻译： 一种CMP组合物，其具有：包含水和至少一种在与活化剂接触时产生自由基的氧化化合物的流体; 以及多个具有表面并且包含至少一种选自Cu，Fe，Mn，Ti或其混合物的离子或化合物的活化剂的颗粒，其中所述表面的至少一部分包含稳定剂。 优选的活化剂选自B，W，Al和P的无机含氧化合物，例如硼酸盐，钨酸盐，铝酸盐和磷酸盐。 活化剂优选为Cu或Fe的离子。 令人惊奇的是，只要0.2ppm和12ppm的活化剂是有用的，如果含活化剂的颗粒作为浆料悬浮在流体中。 有利地，某些有机酸，特别是二羟基烯醇酸的含量小于约4000ppm。 有利地，在颗粒已经用稳定剂涂覆之后，将活化剂涂覆到磨料颗粒上。