Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal
    1.
    发明授权
    Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal 有权
    用于金属去除的高选择性的化学机械平面化的组成和相关方法

    公开(公告)号:US07247179B2

    公开(公告)日:2007-07-24

    申请号:US10914113

    申请日:2004-08-09

    IPC分类号: C09G1/02 C09G1/04

    摘要: A composition and associated methods for chemical mechanical planarization (or other polishing) are described. The composition may comprise an abrasive and a dispersed hybrid organic/inorganic particle. The composition may further comprise an alkyne compound. Two different methods for chemical mechanical planarization are disclosed. In one method (Method A), the CMP slurry composition employed in the method comprises comprise an abrasive and a dispersed hybrid organic/inorganic particle. In another method (Method B), the CMP slurry composition employed in the method comprises comprise an abrasive and an alkyne compound. The composition may further comprise an oxidizing agent in which case the composition is particularly useful in conjunction with the associated methods (A and B) for metal CMP applications (e.g., tungsten CMP).

    摘要翻译: 描述了用于化学机械平面化(或其它抛光)的组合物和相关方法。 组合物可以包含研磨剂和分散的杂化有机/无机颗粒。 组合物还可以包含炔化合物。 公开了用于化学机械平面化的两种不同的方法。 在一种方法(方法A)中,该方法中使用的CMP浆料组合物包括研磨剂和分散的杂化有机/无机颗粒。 在另一种方法(方法B)中,该方法中使用的CMP浆料组合物包括研磨剂和炔化合物。 组合物还可以包含氧化剂,在这种情况下,组合物特别适用于金属CMP应用(例如,钨CMP)的相关方法(A和B)。

    Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization
    7.
    发明授权
    Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization 有权
    将配体和有机金属化合物固定在二氧化硅表面上的方法及其在化学机械平面化中的应用

    公开(公告)号:US07691287B2

    公开(公告)日:2010-04-06

    申请号:US11700526

    申请日:2007-01-31

    IPC分类号: C09K13/00

    CPC分类号: C09G1/02 B24B37/044

    摘要: A method of polishing a substrate with a polishing composition comprising an oxidizing agent and abrasive particles having a surface, said surface of the abrasive particles being at least partially modified with 1) at least one stabilizer compound comprising aluminum, boron, tungsten, or both, said stabilizer compound being bound via a covalent bond to said abrasive particles, and 2) an organic chelating compound, said chelating compound being bound via a covalent bond to said stabilizer compound. The organic chelating compounds include one or more of 1) a nitrogen-containing moiety and between one and five other polar groups; 2) a sulfur-containing moiety and between one and five other polar groups; and 3) between two and five polar groups selected from carboxylic acid groups or salts thereof and hydroxyl groups.

    摘要翻译: 一种用包含氧化剂和具有表面的磨料颗粒的抛光组合物抛光基材的方法,所述磨料颗粒的所述表面至少部分地用1)至少一种包含铝,硼,钨或两者的稳定剂化合物进行改性, 所述稳定剂化合物通过共价键与所述研磨颗粒结合,和2)有机螯合化合物,所述螯合化合物通过共价键与所述稳定剂化合物结合。 有机螯合化合物包括1)含氮部分和1至5个其它极性基团中的一种或多种; 2)含硫部分和1至5个其它极性基团; 和3)选自羧酸基团或其盐和羟基的两个和五个极性基团之间。

    Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
    8.
    发明授权
    Chemical-mechanical planarization composition having ketooxime compounds and associated method for use 失效
    具有酮肟化合物的化学机械平面化组合物及其相关使用方法

    公开(公告)号:US07316977B2

    公开(公告)日:2008-01-08

    申请号:US11508427

    申请日:2006-08-23

    摘要: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a ketoxime compound and water. The composition may also contain an abrasive and/or a per compound oxidizing agent. The composition affords tunability of removal rates for metal, barrier material, and dielectric layer materials in metal CMP. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

    摘要翻译: 描述了用于化学机械平面化(或其它抛光)的组合物和相关方法。 该组合物含有酮肟化合物和水。 组合物还可以含有磨料和/或每一种化合物氧化剂。 该组合物提供金属CMP中金属,阻挡材料和介电层材料的去除速率的可调性。 该组合物特别适用于金属CMP应用的相关方法(例如,步骤2铜CMP工艺)。

    CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
    9.
    发明授权
    CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use 失效
    硼表面改性磨料和硝基取代磺酸的CMP组成及其使用方法

    公开(公告)号:US07678702B2

    公开(公告)日:2010-03-16

    申请号:US11509223

    申请日:2006-08-24

    IPC分类号: H01L21/302 H01L21/461

    摘要: A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords high removal rates for barrier layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).

    摘要翻译: 描述了用于化学机械平面化(或其它抛光)的组合物和相关方法。 该组合物含有硼表面改性的研磨剂,硝基取代的磺酸化合物,每一种化合物的氧化剂和水。 该组合物在金属CMP工艺中为阻挡层材料提供高的去除率。 该组合物特别适用于金属CMP应用的相关方法(例如,步骤2铜CMP工艺)。