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    Light emitting device and method of manufacturing the same
    1.
    发明授权
    Light emitting device and method of manufacturing the same 有权

    公开(公告)号：US07205576B2

    公开(公告)日：2007-04-17

    申请号：US10930915

    申请日：2004-09-01

    申请人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

    发明人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

    IPC分类号： H01L33/00

    CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

    摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

    Nitride-based light emitting device and method of manufacturing the same
    2.
    发明授权
    Nitride-based light emitting device and method of manufacturing the same 有权
    氮化物基发光器件及其制造方法

    公开(公告)号：US07180094B2

    公开(公告)日：2007-02-20

    申请号：US10957704

    申请日：2004-10-05

    申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

    发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

    IPC分类号： H01L29/04

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

    摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

    摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

    Thin film electrode for high-quality GaN optical devices
    4.
    发明授权
    Thin film electrode for high-quality GaN optical devices 有权
    用于高品质GaN光学器件的薄膜电极

    公开(公告)号：US07687908B2

    公开(公告)日：2010-03-30

    申请号：US10886686

    申请日：2004-07-09

    申请人： Dong-seok Leem ,  June-o Song ,  Sang-ho Kim ,  Tae-yeon Seong

    发明人： Dong-seok Leem ,  June-o Song ,  Sang-ho Kim ,  Tae-yeon Seong

    IPC分类号： H01L23/48

    CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.

    摘要翻译： 用于p型GaN半导体的欧姆接触的薄膜电极包括顺序堆叠在p型GaN层上的第一和第二电极层。 第一电极层可以包括Ni基合金，Cu基合金，Co基合金或能够形成p型热电氧化物的固溶体，或者可以包括至少掺杂有氧化镍的Ni氧化物 一个选自Al，Ga和In。 第二电极层可以包括选自Au，Pd，Pt，Ru，Re，Sc，Mg，Zn，V，Hf，Ta，Rh，Ir，W，Ti，Ag，Cr，Mo中的至少一种 ，Nb，Ca，Na，Sb，Li，In，Sn，Al，Ni，Cu和Co。此外，提供了制造薄膜电极的方法。

    Light emitting device and method of manufacturing the same
    5.
    发明授权
    Light emitting device and method of manufacturing the same 有权
    发光元件及其制造方法

    公开(公告)号：US07541207B2

    公开(公告)日：2009-06-02

    申请号：US11714843

    申请日：2007-03-07

    申请人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

    发明人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

    IPC分类号： H01L21/285 ,  H01L33/00

    CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

    摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

    摘要翻译： 提供一种发光器件及其制造方法。 发光器件具有依次层叠基板，n型覆盖层，发光层，p型覆盖层，欧姆接触层和反射层的结构。 通过向氧化铟中加入附加元素来形成欧姆接触层。 根据发光器件及其制造方法，提高了与p型覆盖层的欧姆接触的特性，从而提高了包装FCLEDS期间引线接合的效率和产率。 此外，由于低的非接触电阻和优异的电流和电压特性，可以提高发光器件的发光效率和寿命。

    Flip-chip light emitting diode and method of manufacturing the same
    6.
    发明授权
    Flip-chip light emitting diode and method of manufacturing the same 有权
    倒装芯片发光二极管及其制造方法

    公开(公告)号：US07358541B2

    公开(公告)日：2008-04-15

    申请号：US11002797

    申请日：2004-12-03

    申请人： Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem

    发明人： Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem

    IPC分类号： H01L29/22 ,  H01L29/227 ,  H01L33/00

    CPC分类号： H01L33/405 ,  H01L33/0095

    摘要： Provided are a flip-chip light emitting diode (FCLED) and a method of manufacturing the same. The provided FCLED is formed by sequentially depositing an n-type cladding layer, an active layer, a p-type cladding layer, and a reflective layer on a substrate. The reflective layer is formed of the alloy of silver to which a solute element is added. According to the provided FCLED and the method of manufacturing the same, a thermal stability is improved to improve an ohmic contact characteristic to a p-type cladding layer, thus a wire bonding efficiency and a yield are improved when packaging the provided FCLED. In addition, the light emitting efficiency and the lifespan of the provided FCLED are improved due to a low specific-contact resistance and an excellent current-voltage characteristic.

    摘要翻译： 提供了一种倒装芯片发光二极管（FCLED）及其制造方法。 所提供的FCLED通过在衬底上依次沉积n型包覆层，有源层，p型包覆层和反射层而形成。 反射层由添加溶质元素的银合金形成。 根据提供的FCLED及其制造方法，改善了热稳定性以提高p型包覆层的欧姆接触特性，从而在包装所提供的FCLED时提高了引线接合效率和收率。 此外，由于具有低的比接触电阻和优异的电流 - 电压特性，提供的FCLED的发光效率和寿命得到改善。

    Nitride-based light emitting device and method of manufacturing the same
    7.
    发明授权
    Nitride-based light emitting device and method of manufacturing the same 有权
    氮化物基发光器件及其制造方法

    公开(公告)号：US07193249B2

    公开(公告)日：2007-03-20

    申请号：US10963725

    申请日：2004-10-14

    申请人： Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem

    发明人： Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem

    IPC分类号： H01L29/24

    CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L33/32

    摘要： Provided are a nitride-based light emitting device using a p-type conductive transparent thin film electrode layer and a method of manufacturing the same. The nitride-based light emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer and an ohmic contact layer sequentially formed on the substrate. The ohmic contact layer is made from a p-type conductive transparent oxide thin film. The nitride-based light emitting device and method of manufacturing the same provide excellent I-V characteristics by improving characteristics of an ohmic contact to a p-cladding layer while enhancing light emission efficiency of the device due to high light transmittance exhibited by a transparent electrode.

    摘要翻译： 提供一种使用p型导电性透明薄膜电极层的氮化物系发光元件及其制造方法。 氮化物系发光器件包括基片，以及顺序形成在基片上的n包层，有源层，p覆层和欧姆接触层。 欧姆接触层由p型导电透明氧化物薄膜制成。 氮化物系发光器件及其制造方法通过改善由p型覆层形成的欧姆接触特性而提供优异的I-V特性，同时由于透明电极所呈现的高透光性而提高了器件的发光效率。

    Flip-chip light emitting diode and method of manufacturing the same
    8.
    发明申请
    Flip-chip light emitting diode and method of manufacturing the same 审中-公开
    倒装芯片发光二极管及其制造方法

    公开(公告)号：US20050121685A1

    公开(公告)日：2005-06-09

    申请号：US10981502

    申请日：2004-11-05

    申请人： Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem ,  Hyun-gi Hong

    发明人： Tae-yeon Seong ,  June-o Song ,  Dong-seok Leem ,  Hyun-gi Hong

    IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/34 ,  H01L33/42 ,  H01L33/00

    CPC分类号： H01L33/46 ,  H01L33/42

    摘要： Provided are a flip-chip type light emitting device and a method of manufacturing the same. The provided flip-chip type light emitting device includes a substrate, an n-type cladding layer, an active layer, a p-type cladding layer, an ohmic contact layer formed of tin oxide to which at least one of antimony, fluorine, phosphorus, and arsenic is doped, and a reflection material formed of a reflective material. According to the provided flip-chip type light emitting device and the method of manufacturing the same, a current-voltage characteristic and durability are improved by applying a conductive oxide electrode structure having low surface resistivity and high carrier concentration.

    摘要翻译： 提供一种倒装芯片型发光器件及其制造方法。 所提供的倒装芯片型发光器件包括衬底，n型包覆层，有源层，p型覆层，由氧化锡形成的欧姆接触层，至少一种锑，氟，磷 ，并且砷被掺杂，以及由反射材料形成的反射材料。 根据提供的倒装芯片型发光器件及其制造方法，通过施加具有低表面电阻率和高载流子浓度的导电氧化物电极结构，提高了电流 - 电压特性和耐久性。

    Nitride-based light emitting device and method of manufacturing the same
    10.
    发明授权
    Nitride-based light emitting device and method of manufacturing the same 有权
    氮化物基发光器件及其制造方法

    公开(公告)号：US07485479B2

    公开(公告)日：2009-02-03

    申请号：US11649236

    申请日：2007-01-04

    申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

    发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

    IPC分类号： H01L21/00

    CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

    摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

    摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。