Oscillator with temperature control
    1.
    发明申请
    Oscillator with temperature control 有权
    振荡器带温度控制

    公开(公告)号:US20050134393A1

    公开(公告)日:2005-06-23

    申请号:US10739398

    申请日:2003-12-19

    CPC分类号: H03L1/022 H03L1/028

    摘要: An oscillator circuit includes a capacitor device, a current source for supplying a current to the capacitor device, a reference voltage, and a control circuit. The reference voltage is a first input to a comparator. An output of the capacitor device and an output of the current source are a second input to the comparator. The control circuit resets the oscillator circuit when the first and second inputs to the comparator are equal.

    摘要翻译: 振荡器电路包括电容器装置,用于向电容器装置提供电流的电流源,参考电压和控制电路。 参考电压是比较器的第一个输入。 电容器装置的输出和电流源的输出是比较器的第二输入。 当比较器的第一和第二输入相等时,控制电路复位振荡器电路。

    Device and method for regulating the threshold voltage of a transistor
    2.
    发明申请
    Device and method for regulating the threshold voltage of a transistor 有权
    用于调节晶体管的阈值电压的装置和方法

    公开(公告)号:US20070008796A1

    公开(公告)日:2007-01-11

    申请号:US11477077

    申请日:2006-06-28

    IPC分类号: G11C7/04 G11C7/06 G11C5/14

    CPC分类号: G11C7/08 G11C7/04 G11C7/06

    摘要: A method and a device for regulating the threshold voltage of a transistor is disclosed. The device includes a circuit configured for modifying a voltage applied at a bulk connection of the transistor such that the threshold voltage of the transistor is substantially temperature-independent at least in a first temperature range. In one embodiment, the device includes a memory device, and the transistor is a transistor of a sense amplifier of the memory device.

    摘要翻译: 公开了一种用于调节晶体管的阈值电压的方法和装置。 该器件包括电路,其被配置为修改在晶体管的体连接处施加的电压,使得晶体管的阈值电压至少在第一温度范围内基本上与温度无关。 在一个实施例中,器件包括存储器件,晶体管是存储器件的读出放大器的晶体管。

    Voltage regulator
    3.
    发明授权
    Voltage regulator 失效
    电压调节器

    公开(公告)号:US06919755B2

    公开(公告)日:2005-07-19

    申请号:US10464611

    申请日:2003-06-18

    IPC分类号: G11C5/14 H01J19/82

    CPC分类号: G11C5/147

    摘要: The invention relates to a voltage regulating circuit arrangement for converting a first voltage (VEXT) applied to an input of said voltage regulating circuit arrangement into a second voltage (VBLH) that may be tapped at an output of said voltage regulating circuit arrangement, wherein, when said first voltage (VEXT) falls below a threshold value (VEXT_THRESHOLD), the first voltage (VEXT) applied to the input of said voltage regulating circuit arrangement is connected through to said output of said voltage regulating circuit arrangement.

    摘要翻译: 本发明涉及一种用于将施加到所述电压调节电路装置的输入的第一电压(VEXT)转换成可在所述电压调节电路装置的输出端被抽头的第二电压(VBLH)的电压调节电路装置, 当所述第一电压(VEXT)低于阈值(VEXT_THRESHOLD)时,施加到所述电压调节电路装置的输入端的第一电压(VEXT)连接到所述电压调节电路装置的所述输出端。

    Method for setting the trigger power of transmitter diodes
    5.
    发明授权
    Method for setting the trigger power of transmitter diodes 失效
    用于设置发射二极管触发功率的方法

    公开(公告)号:US06466041B1

    公开(公告)日:2002-10-15

    申请号:US09672291

    申请日:2000-09-27

    IPC分类号: G01R31308

    CPC分类号: H04B10/11 H04L25/26

    摘要: A method for setting the trigger power of transmitter diodes that transmit data via optical paths allows the transmission power to be adjusted and adapted to the communication distance. The trigger power is determined for the present communication distance on the basis of a test signal before data transmission begins. A circuit arrangement implementing the method includes a driver circuit with a switching device that switches a circuit junction point selectively to a supply voltage or to a constant reference voltage, a voltage-controlled resistor which delivers the driver current and is controlled from the circuit junction point, and a voltage-controlled measuring resistor which delivers a measured current with a fixed relationship to the driver current and is controlled from the circuit junction point. Since the set trigger power can be reduced, the power consumption for data transmission can be reduced considerably.

    摘要翻译: 用于设置通过光路传输数据的发射器二极管的触发功率的方法允许调整发射功率并适应通信距离。 基于数据传输开始前的测试信号,确定当前通信距离的触发功率。 实现该方法的电路装置包括具有切换装置的驱动器电路,该开关装置将电路连接点选择性地切换到电源电压或恒定的参考电压;压控电阻器,其传递驱动器电流并且从电路连接点 以及电压测量电阻器,其以与驱动器电流固定的关系传送测量电流,并从电路连接点进行控制。 由于可以减小设定的触发功率,因此可以显着降低用于数据传输的功耗。

    Driver device, in particular for a semiconductor device, and method for operating a driver device
    6.
    发明授权
    Driver device, in particular for a semiconductor device, and method for operating a driver device 失效
    驱动器装置,特别是用于半导体器件的驱动器装置,以及用于操作驱动器装置的方法

    公开(公告)号:US07486116B2

    公开(公告)日:2009-02-03

    申请号:US10924207

    申请日:2004-08-24

    IPC分类号: H03K3/00

    摘要: The invention relates to a driver device and a method for operating a driver device in particular for a semiconductor device. The driver device includes a signal driver connected to a supply voltage. The driver device also includes a signal driver activating circuit section for activating a further signal driver when the supply voltage lies below a predetermined threshold value.

    摘要翻译: 本发明涉及一种用于操作驱动器件的驱动器器件和方法,特别是用于半导体器件。 驱动器装置包括连接到电源电压的信号驱动器。 驱动器装置还包括信号驱动器启动电路部分,用于当电源电压低于预定阈值时激活另外的信号驱动器。

    Circuit and a method of determining the resistive state of a resistive memory cell
    7.
    发明申请
    Circuit and a method of determining the resistive state of a resistive memory cell 失效
    电路和确定电阻性存储单元的电阻状态的方法

    公开(公告)号:US20070247892A1

    公开(公告)日:2007-10-25

    申请号:US11406803

    申请日:2006-04-19

    申请人: Jens Egerer

    发明人: Jens Egerer

    IPC分类号: G11C11/00

    摘要: A method and a circuit are disclosed for determining the resistive state of a resistive memory cell being read. The method includes determining the resistive state of the memory cell being read by comparing a current dependent on the resistive state of the memory cell being read with a reference current that can be dependent on a resistive state of at least one reference resistive memory cell. A read circuit can be constructed to compare the two currents. The resistive state of the memory cell being read is indicative of the data bit stored by the memory cell.

    摘要翻译: 公开了一种用于确定被读取的电阻性存储器单元的电阻状态的方法和电路。 该方法包括通过将取决于所读取的存储器单元的电阻状态的电流与可以依赖于至少一个参考电阻存储器单元的电阻状态的参考电流相比较来确定正在读取的存储器单元的电阻状态。 可以构造读取电路来比较两个电流。 被读取的存储单元的电阻状态指示存储单元存储的数据位。

    MEMORY WITH A TEMPERATURE SENSOR, DYNAMIC MEMORY AND MEMORY WITH A CLOCK UNIT AND METHOD OF SENSING A TEMPERATURE OF A MEMORY
    8.
    发明申请
    MEMORY WITH A TEMPERATURE SENSOR, DYNAMIC MEMORY AND MEMORY WITH A CLOCK UNIT AND METHOD OF SENSING A TEMPERATURE OF A MEMORY 有权
    具有温度传感器,具有时钟单元的动态存储器和存储器的存储器以及感测存储器温度的方法

    公开(公告)号:US20070223299A1

    公开(公告)日:2007-09-27

    申请号:US11386048

    申请日:2006-03-21

    IPC分类号: G11C7/00 G11C7/04 G11C11/34

    摘要: Methods and apparatus for determining a temperature of a memory device. A memory device includes a memory array, a temperature configured to measure a temperature of the device and an evaluating circuit configured to receive a signal representative of the temperature measured by the temperature sensor and configured to generate a code word indicative of the measured temperature and a type of the temperature sensor, the temperature sensor being selected from one of at least two different temperature sensor types.

    摘要翻译: 用于确定存储器件的温度的方法和装置。 存储器件包括存储器阵列,被配置为测量器件的温度的温度以及被配置为接收表示由温度传感器测量的温度的信号并被配置为产生指示测量温度的代码字的评估电路,以及 温度传感器的类型,温度传感器从至少两种不同的温度传感器类型中的一种中选择。

    Driver device, in particular for a semiconductor device, and method for operating a driver device
    9.
    发明申请
    Driver device, in particular for a semiconductor device, and method for operating a driver device 失效
    驱动器装置,特别是用于半导体器件的驱动器装置,以及用于操作驱动器装置的方法

    公开(公告)号:US20050077929A1

    公开(公告)日:2005-04-14

    申请号:US10924207

    申请日:2004-08-24

    摘要: The invention relates to a method for operating a driver device (1), and to a driver device (1), in particular for a semiconductor device, said driver device (1) comprising: a signal driver (6a) connected to a supply voltage (VDDQ), c h a r a c t e r i z e d i n t h a t the driver device (1) additionally comprises: means (5) for activating a further signal driver (6b) when the supply voltage (VDDQ) lies below a predetermined threshold value (VDDQthreshold, VDDQthreshold1).

    摘要翻译: 本发明涉及一种用于操作驱动器件(1)的方法,特别涉及用于半导体器件的驱动器器件(1),所述驱动器器件(1)包括:信号驱动器(6a),连接到电源电压 (VDDQ),其特征在于驱动器装置(1)还包括:当电源电压(VDDQ)低于预定阈值(VDDQthreshold,VDDQthreshold1))时,用于激活另外的信号驱动器(6b)的装置(5)。

    Systems and methods for writing to a memory
    10.
    发明授权
    Systems and methods for writing to a memory 有权
    用于写入内存的系统和方法

    公开(公告)号:US07969806B2

    公开(公告)日:2011-06-28

    申请号:US12110859

    申请日:2008-04-28

    IPC分类号: G11C7/00

    摘要: An integrated circuit includes memory segments, each having at least one memory cell configurable in first and second states to store data, and a controller that controls programming and erasing of the memory segments. The controller maps external memory addresses of write data to internal memory addresses of erased memory segments with no memory cells in the first state such that erased memory segments are programmed with write data. When a write access occurs for an external memory address previously mapped to an internal memory address of a programmed memory segment with at least one memory cell in the first state, the controller remaps the external memory address to another internal memory address of an erased memory segment. The controller identifies programmed memory segments to be erased and controls selective erasure of the identified programmed memory segments, such as programmed memory segments no longer mapped to an external memory address.

    摘要翻译: 集成电路包括存储器段,每个存储器段具有可在第一和第二状态下配置以存储数据的至少一个存储单元,以及控制存储器段的编程和擦除的控制器。 控制器将写入数据的外部存储器地址映射到已擦除存储器段的内部存储器地址,而没有存储器单元处于第一状态,使得擦除的存储器段被编写为写入数据。 当对于先前映射到具有处于第一状态的至少一个存储器单元的编程存储器段的内部存储器地址的外部存储器地址进行写访问时,控制器将外部存储器地址重新映射到擦除的存储器段的另一内部存储器地址 。 控制器识别要擦除的已编程存储器段,并且控制所识别的已编程存储器段的选择性擦除,例如不再映射到外部存储器地址的编程存储器段。