利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

10 条记录 (耗时 0.03 秒)

    Process for preparing controlled-released chitosan microcapsule
    1.
    发明授权
    Process for preparing controlled-released chitosan microcapsule 有权
    制备受控释放的壳聚糖微胶囊的方法

    公开(公告)号：US06228291B1

    公开(公告)日：2001-05-08

    申请号：US09342070

    申请日：1999-06-29

    申请人： Jung-min Lee ,  Choong Kyun Yeom ,  Chul Ung Kim ,  Beom Sik Kim ,  Kwang Joo Kim ,  Sang Bong Oh

    发明人： Jung-min Lee ,  Choong Kyun Yeom ,  Chul Ung Kim ,  Beom Sik Kim ,  Kwang Joo Kim ,  Sang Bong Oh

    IPC分类号： B01J1302

    CPC分类号： B01J13/16 ,  Y10S514/963 ,  Y10T428/2984

    摘要： The present invention relates to a process for preparing the controlled-release chitosan microcapsule, more specifically to a process for preparing the sustained-release chitosan microcapsule capable of releasing at an appropriate rate for a long time, which is characterized by: a) Biodegradable chitosan polymer is used for the capsule material; b) The capsule is kept stable during the release time by the rapid and effective crosslinking reaction between the chitosan polymer and the double crosslinking agent on the surface of tiny particles formed by a new emulsion interface reaction method using a double crosslinking agent of sulfuric acid and glutaraldehyde; and c) The microcapsule which is smaller than several &mgr;m s can be easily formed and the capsule is kept stable for a long release time because an insoluble polymer film whose source material is biodegradable is formed after the release.

    摘要翻译： 本发明涉及一种制备控制释放壳聚糖微胶囊的方法，更具体地涉及能够长时间以适当速率释放的缓释壳聚糖微胶囊的制备方法，其特征在于：a）可生物降解的壳聚糖 聚合物用于胶囊材料; b）胶囊在释放时间内通过壳聚糖聚合物和双交联剂之间的快速有效的交联反应在通过新的乳液界面反应方法形成的微小颗粒的表面上保持稳定，该方法使用 硫酸和戊二醛的双交联剂; 和）可以容易地形成小于几个微米的微胶囊，并且由于在释放后形成源材料是可生物降解的不溶性聚合物膜，所以胶囊保持稳定的长时间释放时间。

    Method and apparatus for on-line measurement of the permeation characteristics of a permeant through dense nonporous membrane
    2.
    发明授权
    Method and apparatus for on-line measurement of the permeation characteristics of a permeant through dense nonporous membrane 失效
    用于在线测量渗透物通过致密无孔膜的渗透特性的方法和装置

    公开(公告)号：US06335202B1

    公开(公告)日：2002-01-01

    申请号：US09329492

    申请日：1999-06-10

    申请人： Jung Min Lee ,  Choong Kyun Yeom ,  Chul Ung Kim ,  Beom Sik Kim ,  Kwang Joo Kim

    发明人： Jung Min Lee ,  Choong Kyun Yeom ,  Chul Ung Kim ,  Beom Sik Kim ,  Kwang Joo Kim

    IPC分类号： G01N3002

    CPC分类号： G01N15/0826 ,  G01N30/82 ,  G01N2030/025

    摘要： This invention relates to a method and apparatus for on-line measurement of permeation characteristics (transmitting chemicals) through dense nonporous membrane. This invention is intended to facilitate various research activities, such as simultaneous analyses of diffusion coefficient, solubility coefficient, permeation rate and permeant composition, and presentation of new analysis about the permeation behavior, kinetics and so on. The object of this invention is to provide the method and apparatus for measurement of permeation characteristics of permeants in liquid, vapor or gas phase through dense nonporous membrane and more practicuraly, to provide permeation apparatus for measurement of permeation characteristics by analyzing permeation rate and permeation concentration of permeants through an on-line type dense porous membrane with time, not only for a steady state but also for an unsteady state in an accurate and reliable manner.

    摘要翻译： 本发明涉及通过致密无孔膜在线测量渗透特性（透射化学品）的方法和设备。 本发明旨在促进各种研究活动，例如扩散系数的同时分析，溶解度系数，渗透速率和渗透物组成，以及关于渗透行为，动力学等的新分析的呈现。 本发明的目的是提供用于通过致密无孔膜测量渗透液渗透特性的方法和装置，并且更实用，以便通过分析渗透速率和渗透浓度来提供用于测量渗透特性的渗透装置 的渗透剂通过在线型致密多孔膜随时间而变化，不仅用于稳定状态，而且以准​​确可靠的方式进行非稳态。

    Polyion complex separation membrane with a double structure
    3.
    发明授权
    Polyion complex separation membrane with a double structure 失效
    Polyion复合分离膜具有双重结构

    公开(公告)号：US06325218B1

    公开(公告)日：2001-12-04

    申请号：US09486238

    申请日：2000-02-24

    申请人： Jung Min Lee ,  Choong Kyun Yeom ,  Chul Ung Kim ,  Beom Sik Kim ,  Kwang Joo Kim

    发明人： Jung Min Lee ,  Choong Kyun Yeom ,  Chul Ung Kim ,  Beom Sik Kim ,  Kwang Joo Kim

    IPC分类号： B01D2905

    CPC分类号： B01D71/80 ,  B01D61/02 ,  B01D69/12 ,  B01D69/125 ,  C02F1/441

    摘要： This invention relates to a polyion complex separation membrane with a double structure, which is applicable in the separation process of a water-soluble mixture having ionic molecules or particles by means of reverse osmotic pressure for the purposes of recovering expensive ionic organic materials such as anionic emulsifiers from the waste water. More particularly, this invention relates to said membrane having anionic polymers, as substrate, which is immersed into a cationic polymer solution containing a multivalent ion cross-linking agent, by which a cross-linkage within the internal of the separation membrane is achieved, thereby forming an ion complex between ionic polymers of opposite ion at the surface of the separation membrane to yield a stable separation membrane of a double structure.

    摘要翻译： 本发明涉及具有双重结构的聚离子络合物分离膜，其可应用于具有离子分子或颗粒的水溶性混合物通过反渗透压力的分离过程，用于回收昂贵的离子有机材料如阴离子 来自废水的乳化剂。 更具体地说，本发明涉及具有阴离子聚合物作为底物的所述膜，其被浸入含有多价离子交联剂的阳离子聚合物溶液中，由此实现了分离膜内部的交联，由此 在分离膜表面的相对离子的离子聚合物之间形成离子络合物，得到双重结构的稳定的分离膜。

    Semiconductor memory device
    4.
    发明授权
    Semiconductor memory device 有权
    半导体存储器件

    公开(公告)号：US08897068B2

    公开(公告)日：2014-11-25

    申请号：US13452236

    申请日：2012-04-20

    申请人： Beom Sik Kim ,  Young Soo Park

    发明人： Beom Sik Kim ,  Young Soo Park

    IPC分类号： G11C16/04 ,  G11C16/34

    CPC分类号： G11C16/0483 ,  G11C16/3418

    摘要： A semiconductor memory device includes a memory cell array configured to include a plurality of memory blocks, a voltage generator configured to output operating voltages for data input and output to global lines, and a row decoder configured to transfer the operating voltages to local lines of a memory block, selected from among the plurality of memory blocks, and supply a ground voltage to local lines of unselected memory blocks in response to address signals.

    摘要翻译： 半导体存储器件包括被配置为包括多个存储器块的存储单元阵列，被配置为输出用于数据输入和输出到全局线的工作电压的电压发生器，以及配置成将工作电压传送到本地线的本地线的行解码器 存储器块，从多个存储器块中选择，并且响应于地址信号将接地电压提供给未选择的存储器块的本地线。

    METHOD OF ERASING A NONVOLATILE MEMORY DEVICE
    5.
    发明申请
    METHOD OF ERASING A NONVOLATILE MEMORY DEVICE 失效
    擦除非易失性存储器件的方法

    公开(公告)号：US20090290423A1

    公开(公告)日：2009-11-26

    申请号：US12361783

    申请日：2009-01-29

    申请人： Beom Sik Kim ,  Young Soo Park

    发明人： Beom Sik Kim ,  Young Soo Park

    IPC分类号： G11C16/16 ,  G11C16/06

    CPC分类号： G11C16/16 ,  G11C16/344

    摘要： In a method of erasing a nonvolatile memory device, an erase operation is performed on memory cells of a selected block. A first soft program operation is performed on the cells on which the erase operation has been performed. The erase operation and the first soft program operation are repeatedly performed by increasing an erase voltage by a first step voltage until a threshold voltage of the memory cells becomes lower than a first erase verify voltage. When the threshold voltage of the memory cells becomes lower than the first erase verify voltage, a second soft program operation is performed. The second soft program operation is repeatedly performed by increasing a soft program voltage by a second step voltage until a cell is programmed to have a soft program verify voltage.

    摘要翻译： 在擦除非易失性存储器件的方法中，对所选块的存储单元执行擦除操作。 对已执行擦除操作的单元执行第一软编程操作。 通过将擦除电压增加第一阶跃电压直到存储器单元的阈值电压变得低于第一擦除验证电压来重复执行擦除操作和第一软编程操作。 当存储单元的阈值电压变得低于第一擦除验证电压时，执行第二软编程操作。 通过将软编程电压增加第二阶跃电压直到单元被编程为具有软程序验证电压来重复执行第二软编程操作。

    BaX TYPE ZEOLITE GRANULE AND PROCESS FOR PREPARING THE SAME
    7.
    发明申请
    BaX TYPE ZEOLITE GRANULE AND PROCESS FOR PREPARING THE SAME 有权
    BaX型沸石颗粒及其制备方法

    公开(公告)号：US20130012377A1

    公开(公告)日：2013-01-10

    申请号：US13541395

    申请日：2012-07-03

    申请人： Jeong Kwon Suh ,  Beom Sik Kim ,  Yun Ho Jeong ,  Jin Suk Lee ,  Won Young Kim ,  Ho Sik Chang

    发明人： Jeong Kwon Suh ,  Beom Sik Kim ,  Yun Ho Jeong ,  Jin Suk Lee ,  Won Young Kim ,  Ho Sik Chang

    IPC分类号： B01J20/18 ,  B01J20/30

    CPC分类号： C01B39/48 ,  B01J20/18 ,  B01J20/183 ,  B01J20/186 ,  B01J20/28004 ,  B01J20/2803 ,  B01J20/3007 ,  B01J20/3028 ,  B01J20/3042 ,  B01J20/305 ,  B01J20/3078 ,  B01J20/3085 ,  C07C7/13 ,  C07C2529/08 ,  C07C15/08

    摘要： The present invention provides a method for preparing a BaX type zeolite granules comprising: adding a carbohydrate-based molding promoter to NaX type zeolite powder and thereto subsequently spraying and blending alumina sol and silica sol to form granules of the mixture; heating the formed granules to convert the alumina and silica component to aluminosilica so as to generate pores inside the formed granules; hydrothermally treating the resulted granules in a sodium hydroxide aqueous solution under the conditions for zeolite synthesis, thereby converting a portion of the aluminosilica to zeolite; and carrying out ion-exchanging by Ba ions. The present invention also provides BaX type zeolite granules which have excellent strength and can be suitably used as an adsorbent in simulated moving bed (SMB) application.

    摘要翻译： 本发明提供一种制备BaX型沸石颗粒的方法，包括：向NaX型沸石粉末中加入碳水化合物型成型助剂，随后喷涂和混合氧化铝溶胶和二氧化硅溶胶以形成混合物颗粒; 加热形成的颗粒以将氧化铝和二氧化硅组分转化成铝硅石，以在形成的颗粒内产生孔; 在沸石合成条件下将所得颗粒水解处理在氢氧化钠水溶液中，从而将一部分铝硅石转化为沸石; 并通过Ba离子进行离子交换。 本发明还提供了具有优异强度并可适用于模拟移动床（SMB）应用中的吸附剂的BaX型沸石颗粒。

    Method of erasing a nonvolatile memory device
    9.
    发明授权
    Method of erasing a nonvolatile memory device 失效
    擦除非易失性存储器件的方法

    公开(公告)号：US08023330B2

    公开(公告)日：2011-09-20

    申请号：US12361783

    申请日：2009-01-29

    申请人： Beom Sik Kim ,  Young Soo Park

    发明人： Beom Sik Kim ,  Young Soo Park

    IPC分类号： G11C11/34

    CPC分类号： G11C16/16 ,  G11C16/344

    摘要： In a method of erasing a nonvolatile memory device, an erase operation is performed on memory cells of a selected block. A first soft program operation is performed on the cells on which the erase operation has been performed. The erase operation and the first soft program operation are repeatedly performed by increasing an erase voltage by a first step voltage until a threshold voltage of the memory cells becomes lower than a first erase verify voltage. When the threshold voltage of the memory cells becomes lower than the first erase verify voltage, a second soft program operation is performed. The second soft program operation is repeatedly performed by increasing a soft program voltage by a second step voltage until a cell is programmed to have a soft program verify voltage.

    摘要翻译： 在擦除非易失性存储器件的方法中，对所选块的存储单元执行擦除操作。 对已执行擦除操作的单元执行第一软编程操作。 通过将擦除电压增加第一阶跃电压直到存储器单元的阈值电压变得低于第一擦除验证电压来重复执行擦除操作和第一软编程操作。 当存储单元的阈值电压变得低于第一擦除验证电压时，执行第二软编程操作。 通过将软编程电压增加第二阶跃电压直到单元被编程为具有软程序验证电压来重复执行第二软编程操作。