摘要:
A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
摘要:
A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.
摘要:
An ion concentration measurement system is provided. The ion concentration measurement system has: at least an end system having a sensing unit for measuring the ion concentration of a test solution to generate at least a sensing signal; a control unit for controlling the acquisition of the sensing signal; a display unit for displaying the sensing signal in real time; and an end wireless transmission interface for transmitting the sensing signal wirelessly.
摘要:
An ion concentration measurement system is provided. The ion concentration measurement system has: at least an end system having a sensing unit for measuring the ion concentration of a test solution to generate at least a sensing signal; a control unit for controlling the acquisition of the sensing signal; a display unit for displaying the sensing signal in real time; and an end wireless transmission interface for transmitting the sensing signal wirelessly.
摘要:
A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.
摘要:
An ion solution concentration-detecting device includes a working electrode, a reference electrode, and a link element. The working electrode and the reference electrode are inserted into the link element. The working electrode, inserted into the link element, is replaceable, for the better sensitivity to the different ion solution. The working electrode being a contact-detecting electrode can be replaced by another contact-detecting electrode with different sensing membrane. The reference electrode includes a polymeric membrane with ion material covering silver/silver chloride (Ag/AgCl) electrode to provide a fixed and stable electrical potential. The working electrode may be a contact-detecting electrode having a sensing membrane. The sensing membrane may be a metal oxide or a polymer with ion material for measuring different ion solution effectively.
摘要:
A method of fabricating an electrode assembly of a sensor is described. The sensor has a field effect transistor. The electrode assembly is separated from the field effect transistor by only a conductive line. The sensor is functioned to detect different glucose concentrations. A solid layer of tin oxide is deposited on a substrate board. A β-D-glucose oxidase and polyvinyl alcohol bearing styrylpyridinium groups are placed in 100 μl of sulfuric acid, to form an enzyme mixture. The enzyme mixture is dropped on the solid layer of tin oxide. The enzyme mixture is dried. The enzyme mixture is exposed to a UV ray. The enzyme mixture is dried and stabilized. The enzyme mixture is immersed in a sulfuric buffer.
摘要:
The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.
摘要:
A portable multi-ions sensing system is provided. The sensing system includes: a sensing unit for sensing a pH value and a plurality of ion concentrations of a solution and outputting a sensing signal, wherein the sensing unit includes: a substrate; an ITO layer on the substrate; a sensing layer on the ITO layer and connected with an extended lead; a packaging layer encapsulating the sensing layer, the ITO layer and a portion of the substrate with a sensing window for exposing a portion of the sensing layer; a multi-ions selective layer on the portion of the sensing layer exposed by the sensing window for sensing the ion concentrations; and a reference electrode for providing a reference potential for the sensing layer; an analog signal processing unit for receiving, filtering, amplifying and adjusting the level of the sensing signal and outputting a front-end signal; a microcontroller unit for receiving and performing analog/digital converting and two-point correcting processes on the front-end signal and outputting a measurement data; and a real-time display unit for receiving and displaying the measurement data.
摘要:
A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is calculated according to a relationship between a pH value and a gate voltage.