ISFET using PbTiO3 as sensing film
    1.
    发明申请
    ISFET using PbTiO3 as sensing film 失效
    采用PbTiO3作为感应膜的ISFET

    公开(公告)号:US20060040420A1

    公开(公告)日:2006-02-23

    申请号:US11255656

    申请日:2005-10-21

    IPC分类号: H01L21/00 H01L21/8234

    摘要: A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

    摘要翻译: 包含PbTiO 3 N 3薄膜作为H +传感膜的PbTiO 3 / SiO 2取向的ISFET器件 ,及其形成方法。 通过溶胶 - 凝胶法形成PbTiO 3 N 3薄膜,其具有诸如处理温度低,易于控制膜组成并容易地涂覆在大基材上的许多优点。 本发明的PbTiO 3 / SiO 2门控ISFET器件在水溶液中特别是在酸性水溶液中是高度敏感的。 本ISFET的灵敏度范围为50至58mV / pH。 此外,所公开的ISFET具有高线性度。 因此,所公开的ISFET可用于检测流出物。

    ISFET using PbTiO3 as sensing film
    2.
    发明申请
    ISFET using PbTiO3 as sensing film 失效
    采用PbTiO3作为感应膜的ISFET

    公开(公告)号:US20050179065A1

    公开(公告)日:2005-08-18

    申请号:US10778285

    申请日:2004-02-13

    摘要: A PbTiO3/SiO2-gated ISFET device comprising a PbTiO3 thin film as H+-sensing film, and a method of forming the same. The PbTiO3 thin film is formed through a sol-gel process which offers many advantages, such as, low processing temperature, easy control of the composition of the film and easy coating over a large substrate. The PbTiO3/SiO2 gated ISFET device of the present invention is highly sensitive in aqueous solution, and particularly in acidic aqueous solution. The sensitivity of the present ISFET ranges from 50 to 58 mV/pH. In addition, the disclosed ISFET has high linearity. Accordingly, the disclosed ISFET can be used to detect effluent.

    摘要翻译: 包含PbTiO 3 N 3薄膜作为H +传感膜的PbTiO 3 / SiO 2取向的ISFET器件 ,及其形成方法。 通过溶胶 - 凝胶法形成PbTiO 3 N 3薄膜,其具有诸如处理温度低,易于控制膜组成并容易地涂覆在大基材上的许多优点。 本发明的PbTiO 3 / SiO 2门控ISFET器件在水溶液中特别是在酸性水溶液中是高度敏感的。 本ISFET的灵敏度范围为50至58mV / pH。 此外,所公开的ISFET具有高线性度。 因此,所公开的ISFET可用于检测流出物。

    Ion concentration measurement system and methods thereof
    3.
    发明授权
    Ion concentration measurement system and methods thereof 失效
    离子浓度测定系统及其方法

    公开(公告)号:US08333876B2

    公开(公告)日:2012-12-18

    申请号:US12631764

    申请日:2009-12-04

    IPC分类号: G01N27/26

    CPC分类号: G01N27/4165

    摘要: An ion concentration measurement system is provided. The ion concentration measurement system has: at least an end system having a sensing unit for measuring the ion concentration of a test solution to generate at least a sensing signal; a control unit for controlling the acquisition of the sensing signal; a display unit for displaying the sensing signal in real time; and an end wireless transmission interface for transmitting the sensing signal wirelessly.

    摘要翻译: 提供离子浓度测量系统。 离子浓度测量系统具有:至少一个端系统,具有用于测量测试溶液的离子浓度以产生至少一个感测信号的感测单元; 用于控制所述感测信号的获取的控制单元; 用于实时显示感测信号的显示单元; 以及用于无线地发送感测信号的终端无线传输接口。

    ION CONCENTRATION MEASUREMENT SYSTEM AND METHODS THEREOF
    4.
    发明申请
    ION CONCENTRATION MEASUREMENT SYSTEM AND METHODS THEREOF 失效
    离子浓度测量系统及其方法

    公开(公告)号:US20110056847A1

    公开(公告)日:2011-03-10

    申请号:US12631764

    申请日:2009-12-04

    IPC分类号: G01N27/26

    CPC分类号: G01N27/4165

    摘要: An ion concentration measurement system is provided. The ion concentration measurement system has: at least an end system having a sensing unit for measuring the ion concentration of a test solution to generate at least a sensing signal; a control unit for controlling the acquisition of the sensing signal; a display unit for displaying the sensing signal in real time; and an end wireless transmission interface for transmitting the sensing signal wirelessly.

    摘要翻译: 提供离子浓度测量系统。 离子浓度测量系统具有:至少一个端系统,具有用于测量测试溶液的离子浓度以产生至少一个感测信号的感测单元; 用于控制所述感测信号的获取的控制单元; 用于实时显示感测信号的显示单元; 以及用于无线地发送感测信号的终端无线传输接口。

    Biosensor containing ruthenium, measurement using the same and application thereof
    5.
    发明授权
    Biosensor containing ruthenium, measurement using the same and application thereof 失效
    含有钌的生物传感器,使用其进行测量及其应用

    公开(公告)号:US07754056B2

    公开(公告)日:2010-07-13

    申请号:US11449936

    申请日:2006-06-09

    摘要: A biosensor containing ruthenium, measurement using the same, and the application thereof. The biosensor comprises an extended gate field effect transistor (EGFET) structure, including a metal oxide semiconductor field effect transistor (MOSFET), a sensing unit comprising a substrate, a layer comprising ruthenium on the substrate, and a metal wire connecting the MOSFET and the sensing unit.

    摘要翻译: 含有钌的生物传感器,使用其的测定及其应用。 生物传感器包括扩展栅场效应晶体管(EGFET)结构,其包括金属氧化物半导体场效应晶体管(MOSFET),包括衬底的感测单元,在衬底上包含钌的层以及连接MOSFET和金属线的金属线 传感单元。

    Ion solution concentration-detecting device
    6.
    发明授权
    Ion solution concentration-detecting device 失效
    离子溶液浓度检测装置

    公开(公告)号:US07736478B2

    公开(公告)日:2010-06-15

    申请号:US11515727

    申请日:2006-09-06

    IPC分类号: G01N27/333

    CPC分类号: G01N27/4035

    摘要: An ion solution concentration-detecting device includes a working electrode, a reference electrode, and a link element. The working electrode and the reference electrode are inserted into the link element. The working electrode, inserted into the link element, is replaceable, for the better sensitivity to the different ion solution. The working electrode being a contact-detecting electrode can be replaced by another contact-detecting electrode with different sensing membrane. The reference electrode includes a polymeric membrane with ion material covering silver/silver chloride (Ag/AgCl) electrode to provide a fixed and stable electrical potential. The working electrode may be a contact-detecting electrode having a sensing membrane. The sensing membrane may be a metal oxide or a polymer with ion material for measuring different ion solution effectively.

    摘要翻译: 离子溶液浓度检测装置包括工作电极,参考电极和连接元件。 工作电极和参考电极插入到连接元件中。 插入连接元件的工作电极是可更换的,以便更好地对不同离子溶液的敏感性。 作为接触检测电极的工作电极可以由具有不同传感膜的另一接触检测电极代替。 参考电极包括具有覆盖银/氯化银(Ag / AgCl)电极的离子材料的聚合物膜,以提供固定和稳定的电势。 工作电极可以是具有感测膜的接触检测电极。 感测膜可以是金属氧化物或具有用于有效测量不同离子溶液的离子材料的聚合物。

    Method of fabricating electrode assembly of sensor
    7.
    发明授权
    Method of fabricating electrode assembly of sensor 失效
    制造传感器电极组件的方法

    公开(公告)号:US07638157B2

    公开(公告)日:2009-12-29

    申请号:US11533358

    申请日:2006-09-19

    IPC分类号: G01N1/28

    摘要: A method of fabricating an electrode assembly of a sensor is described. The sensor has a field effect transistor. The electrode assembly is separated from the field effect transistor by only a conductive line. The sensor is functioned to detect different glucose concentrations. A solid layer of tin oxide is deposited on a substrate board. A β-D-glucose oxidase and polyvinyl alcohol bearing styrylpyridinium groups are placed in 100 μl of sulfuric acid, to form an enzyme mixture. The enzyme mixture is dropped on the solid layer of tin oxide. The enzyme mixture is dried. The enzyme mixture is exposed to a UV ray. The enzyme mixture is dried and stabilized. The enzyme mixture is immersed in a sulfuric buffer.

    摘要翻译: 描述了制造传感器的电极组件的方法。 该传感器具有场效应晶体管。 电极组件仅通过导线与场效应晶体管分离。 该传感器用于检测不同的葡萄糖浓度。 在基板上沉积固体氧化锡层。 将β-D-葡萄糖氧化酶和含有苯乙烯基吡啶鎓基团的聚乙烯醇基团置于100毫升硫酸中以形成酶混合物。 将酶混合物滴在氧化锡的固体层上。 将酶混合物干燥。 将酶混合物暴露于紫外线。 将酶混合物干燥并稳定。 将酶混合物浸入硫酸缓冲液中。

    METHOD FOR FORMING EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET) BASED SENSOR AND THE SENSOR THEREFROM
    8.
    发明申请
    METHOD FOR FORMING EXTENDED GATE FIELD EFFECT TRANSISTOR (EGFET) BASED SENSOR AND THE SENSOR THEREFROM 失效
    形成扩展栅极场效应晶体管(EGFET)的传感器及其传感器的方法

    公开(公告)号:US20090278175A1

    公开(公告)日:2009-11-12

    申请号:US12343252

    申请日:2008-12-23

    IPC分类号: H01L29/78 H01L21/02

    CPC分类号: G01N27/414

    摘要: The invention provides a method for forming an extended gate field effect transistor (EGFET) based sensor, including: (a) providing a substrate; (b) forming a sensing film including titanium dioxide, ruthenium doped titanium dioxide or ruthenium oxide on the substrate; and (c) forming a conductive wire extended from the sensing film for external contact.

    摘要翻译: 本发明提供一种形成基于扩展栅极场效应晶体管(EGFET)的传感器的方法,包括:(a)提供衬底; (b)在基板上形成包括二氧化钛,掺钌的二氧化钛或氧化钌的感测膜; 和(c)形成从感测膜延伸出的用于外部接触的导线。

    PORTABLE MULTI-IONS SENSING SYSTEM AND FABRICATION THEREOF
    9.
    发明申请
    PORTABLE MULTI-IONS SENSING SYSTEM AND FABRICATION THEREOF 审中-公开
    便携式多离子感测系统及其制造方法

    公开(公告)号:US20090119026A1

    公开(公告)日:2009-05-07

    申请号:US11933809

    申请日:2007-11-01

    CPC分类号: G01N27/4148 G01N27/333

    摘要: A portable multi-ions sensing system is provided. The sensing system includes: a sensing unit for sensing a pH value and a plurality of ion concentrations of a solution and outputting a sensing signal, wherein the sensing unit includes: a substrate; an ITO layer on the substrate; a sensing layer on the ITO layer and connected with an extended lead; a packaging layer encapsulating the sensing layer, the ITO layer and a portion of the substrate with a sensing window for exposing a portion of the sensing layer; a multi-ions selective layer on the portion of the sensing layer exposed by the sensing window for sensing the ion concentrations; and a reference electrode for providing a reference potential for the sensing layer; an analog signal processing unit for receiving, filtering, amplifying and adjusting the level of the sensing signal and outputting a front-end signal; a microcontroller unit for receiving and performing analog/digital converting and two-point correcting processes on the front-end signal and outputting a measurement data; and a real-time display unit for receiving and displaying the measurement data.

    摘要翻译: 提供便携式多离子感测系统。 感测系统包括:感测单元,用于感测溶液的pH值和多个离子浓度并输出感测信号,其中感测单元包括:基底; 衬底上的ITO层; ITO层上的传感层,并与延伸引线连接; 封装层,其将所述感测层,所述ITO层和所述衬底的一部分封装以具有用于暴露所述感测层的一部分的感测窗口; 感测层暴露在感测窗口的部分上的多离子选择层,用于感测离子浓度; 以及用于为感测层提供参考电位的参考电极; 模拟信号处理单元,用于接收,滤波,放大和调整感测信号的电平并输出前端信号; 微控制器单元,用于接收并执行前端信号的模拟/数字转换和两点校正处理,并输出测量数据; 以及用于接收和显示测量数据的实时显示单元。

    TITANIUM OXIDE EXTENDED GATE FIELD EFFECT TRANSISTOR
    10.
    发明申请
    TITANIUM OXIDE EXTENDED GATE FIELD EFFECT TRANSISTOR 审中-公开
    氧化钛扩展栅极场效应晶体管

    公开(公告)号:US20080143352A1

    公开(公告)日:2008-06-19

    申请号:US12037712

    申请日:2008-02-26

    IPC分类号: G01R27/02

    CPC分类号: G01N27/414 H01L31/115

    摘要: A titanium oxide extended gate field effect transistor (EGFET) device and fabricating method thereof. Titanium oxide is formed on an EGFET by sputtering, coating a detection membrane therefor. Current-voltage relationships at different pH values are also measured via a current measuring system. Sensitivity parameter of the titanium oxide EGFET is calculated according to a relationship between a pH value and a gate voltage.

    摘要翻译: 一种氧化钛延伸栅场效应晶体管(EGFET)器件及其制造方法。 通过溅射在EGFET上形成氧化钛,涂覆检测膜。 通过电流测量系统测量不同pH值下的电流 - 电压关系。 根据pH值和栅极电压之间的关系计算氧化钛EGFET的灵敏度参数。