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    Flash memory devices having power level detection circuits
    1.
    发明授权
    Flash memory devices having power level detection circuits 有权
    具有功率电平检测电路的闪存器件

    公开(公告)号：US07221590B2

    公开(公告)日：2007-05-22

    申请号：US11020900

    申请日：2004-12-23

    申请人： Jung-Woo Lee ,  June Lee ,  Hyoung-Woo Lee

    发明人： Jung-Woo Lee ,  June Lee ,  Hyoung-Woo Lee

    IPC分类号： G11C16/04

    CPC分类号： G11C16/30

    摘要： Flash memory devices are provided including a power supply pad unit. The power supply pad unit includes a first power supply pad, a second power supply pad and a power level detection circuit. The first power and second power supply pads are electrically coupled to the power level detection circuit.

    摘要翻译： 提供了包括电源垫单元的闪存设备。 电源焊盘单元包括第一电源焊盘，第二电源焊盘和功率电平检测电路。 第一电源和第二电源焊盘电耦合到功率电平检测电路。

    Flash memory devices having power level detection circuits
    2.
    发明申请
    Flash memory devices having power level detection circuits 有权
    具有功率电平检测电路的闪存器件

    公开(公告)号：US20060018155A1

    公开(公告)日：2006-01-26

    申请号：US11020900

    申请日：2004-12-23

    申请人： Jung-Woo Lee ,  June Lee ,  Hyoung-Woo Kee

    发明人： Jung-Woo Lee ,  June Lee ,  Hyoung-Woo Kee

    IPC分类号： G11C16/04

    CPC分类号： G11C16/30

    摘要： Flash memory devices are provided including a power supply pad unit. The power supply pad unit includes a first power supply pad, a second power supply pad and a power level detection circuit. The first power and second power supply pads are electrically coupled to the power level detection circuit.

    摘要翻译： 提供了包括电源垫单元的闪存设备。 电源焊盘单元包括第一电源焊盘，第二电源焊盘和功率电平检测电路。 第一电源和第二电源焊盘电耦合到功率电平检测电路。

    Flash memory device with multi level cell and burst access method therein
    4.
    发明授权
    Flash memory device with multi level cell and burst access method therein 失效
    具有多级单元和突发存取方法的闪存器件

    公开(公告)号：US08045376B2

    公开(公告)日：2011-10-25

    申请号：US12615374

    申请日：2009-11-10

    申请人： Jung-Woo Lee ,  Jae-Yong Jeong

    发明人： Jung-Woo Lee ,  Jae-Yong Jeong

    IPC分类号： G11C11/34

    CPC分类号： G11C11/5642 ,  G11C11/5628 ,  G11C2211/5633

    摘要： A flash memory device including memory cells, each memory cell configured to store bits, a sensing circuit configured to sequentially sense, for each memory cell, sets of the bits of the memory cell, a data rearrangement unit configured to receive words of data and to rearrange bits of the words to be stored in the memory cells, and an output circuit configured to output a group of the words using the sets of bits from one sensing, at least as early as during a subsequent sensing of sets of bits.

    摘要翻译： 一种闪速存储器件，包括存储器单元，每个存储器单元被配置为存储位;感测电路，被配置为对每个存储器单元依次感测存储器单元的位组;数据重排单元，被配置为接收数据字， 重新排列要存储在存储单元中的字的比特，以及输出电路，其被配置为至少在随后感测位组期间早期使用来自一次感测的比特集来输出一组单词。

    Method for manufacturing printed circuit board using imprinting
    8.
    发明申请
    Method for manufacturing printed circuit board using imprinting 有权
    使用印记制造印刷电路板的方法

    公开(公告)号：US20080008824A1

    公开(公告)日：2008-01-10

    申请号：US11819720

    申请日：2007-06-28

    申请人： Jae-Choon Cho ,  Myeong-Ho Hong ,  Senug-Hyun Ra ,  Hyuk-Soo Lee ,  Jeong-Bok Kwak ,  Jung-Woo Lee ,  Choon-Keun Lee ,  Sang-Moon Lee

    发明人： Jae-Choon Cho ,  Myeong-Ho Hong ,  Senug-Hyun Ra ,  Hyuk-Soo Lee ,  Jeong-Bok Kwak ,  Jung-Woo Lee ,  Choon-Keun Lee ,  Sang-Moon Lee

    IPC分类号： H05K3/46

    CPC分类号： H05K1/09 ,  H05K3/0014 ,  H05K3/107 ,  H05K2201/0329 ,  H05K2203/0108 ,  H05K2203/0796

    摘要： The present invention relates to a method for manufacturing a printed circuit board, more particularly to a method for manufacturing a printed circuit board, in which an oxidant capable of polymerizing conductive polymers is selectively marked on a board using imprinting, and the monomer of a conductive polymer is filled in the selected pattern and polymerized, to provide a conductive polymer wiring pattern. With the method for manufacturing a printed circuit board according to certain aspects of the invention as set forth above, a printed circuit board can be given finer wiring widths to allow a highly integrated, highly efficient printed circuit board. Thus, a printed circuit board (PCB) or a flexible printed circuit boards (FPCB) can be manufactured that is applicable to industrial, clerical, and domestic electric electronic products, by a new technique of forming conductive polymer wiring using imprinting.

    摘要翻译： 本发明涉及一种印刷电路板的制造方法，更具体地说，涉及一种印刷电路板的制造方法，其中使用压印法在基板上选择性地标记导电聚合物聚合的氧化剂，并且导电的单体 聚合物以选定的图案填充并聚合，以提供导电聚合物布线图案。 根据如上所述的根据本发明的某些方面的印刷电路板的制造方法，印刷电路板可以被给予更细的布线宽度，以允许高度集成的高效印刷电路板。 因此，可以通过使用压印形成导电聚合物布线的新技术，制造适用于工业，文书和家用电子电子产品的印刷电路板（PCB）或柔性印刷电路板（FPCB）。

    Flash memory apparatus having single body type rotary cover
    9.
    发明授权
    Flash memory apparatus having single body type rotary cover 有权
    具有单体型旋转盖的闪存装置

    公开(公告)号：US06926544B2

    公开(公告)日：2005-08-09

    申请号：US10346105

    申请日：2003-01-17

    申请人： Jung-Woo Lee

    发明人： Jung-Woo Lee

    IPC分类号： B65D43/16 ,  B65D55/16 ,  G06F3/06 ,  G06F12/00 ,  G06F13/40 ,  G06K19/00 ,  G06K19/077 ,  G11C29/00 ,  H01R13/44 ,  H01R13/447 ,  H01R13/52 ,  H05K5/02 ,  H05K7/16

    CPC分类号： H01R13/447 ,  H01R13/5213 ,  H05K5/0278

    摘要： A flash memory apparatus having a single body type rotary cover, wherein a cover is not completely separated from a main body so that loss of the cover is prevented. The flash memory apparatus includes: a flash memory main body including a rectangular shaped case within which a memory element is mounted. A USB terminal piece is electrically connected with the memory element and is installed at a front end of the case to project therefrom and a hinge protuberance formed on at least one side of the case. A cover defined by a pair of parallel plate members facing each other with an interval corresponding to the thickness of the case is provided. The cover has an open front end and a closed rear end. Both lateral ends of the cover are open. The parallel plate members have a pair of hinge holes joined to the hinge protuberance, so that the cover is rotatable with respect to the flash memory main body, whereby the USB terminal piece is either received in an inner space of the cover or rotated for exposure to the outside of the cover.

    摘要翻译： 一种具有单体型旋转盖的闪存装置，其中盖子与主体不完全分离，从而防止了盖子的损失。 闪速存储装置包括：闪存主体，包括其中安装有存储元件的矩形壳体。 USB端子片与存储元件电连接并且安装在壳体的前端以从其突出并且形成在壳体的至少一侧上的铰链突起。 提供由一对平行板构件限定的盖子，该平板板构件面对彼此具有对应于壳体厚度的间隔。 盖子有一个敞开的前端和一个封闭的后端。 盖子的两个侧端均打开。 平行板构件具有连接到铰链突起的一对铰链孔，使得盖可相对于闪存主体旋转，由此USB端子件被接收在盖的内部空间中或旋转以进行曝光 到外面的封面。

    Photomask having small pitch images of openings for fabricating openings in a semiconductor memory device and a photolithographic method for fabricating the same
    10.
    发明授权
    Photomask having small pitch images of openings for fabricating openings in a semiconductor memory device and a photolithographic method for fabricating the same 有权
    具有用于制造半导体存储器件中的开口的开口的小间距图像的光掩模和用于制造该光掩模的光刻方法

    公开(公告)号：US06872510B2

    公开(公告)日：2005-03-29

    申请号：US10391909

    申请日：2003-03-19

    申请人： Jung-Woo Lee ,  Hak Kim

    发明人： Jung-Woo Lee ,  Hak Kim

    IPC分类号： H01L21/027 ,  G03F1/00 ,  G03F7/40 ,  G03C5/00

    CPC分类号： G03F7/40 ,  G03F1/50

    摘要： A photomask having small pitch images of openings for fabricating an opening of a semiconductor memory device includes a plurality of images of openings arranged in a row direction with a predetermined pitch to be used to transfer the images of openings onto a photoresist layer, and is used for a photolithographic process employing a photoresist flow process. The distance between the centers of the images of openings arranged in the photomask is larger than the pitch. A photolithographic method for fabricating reduced size openings and a semiconductor memory device having openings fabricated using the same method is also provided.

    摘要翻译： 具有用于制造半导体存储器件的开口的开口的小间距图像的光掩模包括以预定间距排列成行方向的多个开口图像，以用于将开口图像转印到光致抗蚀剂层上，并且被使用 用于使用光致抗蚀剂流动方法的光刻工艺。 布置在光掩模中的开口的图像的中心之间的距离大于间距。 还提供了一种用于制造尺寸较小的开口的光刻方法和具有使用相同方法制造的开口的半导体存储器件。