公开(公告)号：US09293441B2

公开(公告)日：2016-03-22

申请号：US13252714

申请日：2011-10-04

申请人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

发明人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

IPC分类号： H01L23/02 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49575 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/05548 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

公开(公告)号：US07846771B2

公开(公告)日：2010-12-07

申请号：US12166293

申请日：2008-07-01

申请人： Koji Taya ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Masanori Onodera ,  Junji Tanaka ,  Murugasan Manikam Achari

发明人： Koji Taya ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Masanori Onodera ,  Junji Tanaka ,  Murugasan Manikam Achari

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06593 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： A carrier for a stacked-type semiconductor device includes an accommodating section for accommodating stacked semiconductor devices, guide portions guiding the stacked semiconductor devices, and grooves through which a fluid may flow to the accommodating section and to sides of the stacked semiconductor devices. These grooves facilitate the flow of gas or liquid on the sides of the accommodating sections, and it is thus expected that the flow of hot wind during the reflow process and cleaning liquid during the cleaning process can be facilitated. This improves the production yield and the cleaning effects. Holes for connecting the accommodating section to the outside may be provided at corners of the accommodating section. Gas may be guided from the lower side of the accommodating section, so that heat can be efficiently applied to the semiconductor devices and bonding failures therebetween can be reduced. Further, grooves connecting adjacent holes may be provided for accommodating sections adjacent to each other.

摘要翻译： 叠层型半导体器件的载体包括用于容纳堆叠的半导体器件的容纳部分，引导堆叠的半导体器件的引导部分和流体可以通过该沟槽流动到容纳部分和堆叠的半导体器件的侧面的沟槽。 这些凹槽有助于容纳部分侧面上的气体或液体的流动，因此预期在清洗过程中回流过程中的热风和清洗液体的流动可以被方便。 这提高了产量和清洁效果。 用于将容纳部分连接到外部的孔可以设置在容纳部分的角部。 气体可以从容纳部分的下侧引导，使得可以有效地将热量施加到半导体器件，并且可以减少它们之间的接合故障。 此外，可以设置连接相邻孔的槽，用于容纳彼此相邻的部分。

公开(公告)号：US07489029B2

公开(公告)日：2009-02-10

申请号：US11214630

申请日：2005-08-30

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

IPC分类号： H01L23/02 ,  H01L23/34 ,  H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/67336 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/3511

摘要： A carrier structure for fabricating a stacked-type semiconductor device includes: a lower carrier that has laminated thin plates and has first openings for mounting first semiconductor packages thereon; and an upper carrier having second openings for mounting second semiconductor packages on the first semiconductor packages. The lower carrier composed of the laminated thin plates realizes an even plate thickness and reduces warps because stress is distributed to the thin plates. This results in an improved production yield. A pattern of the openings in the thin plates of the lower carrier may be formed by etching or electric discharging. The openings thus formed have reduced warps and burrs.

摘要翻译： 用于制造层叠型半导体器件的载体结构包括：具有叠层薄板并具有用于在其上安装第一半导体封装的第一开口的下载体; 以及具有用于将第二半导体封装安装在第一半导体封装上的第二开口的上载体。 由层压薄板构成的下部载体由于应力分布在薄板上，因此实现了均匀的板厚度并且减少了翘曲。 这导致提高的产量。 下载体的薄板中的开口的图案可以通过蚀刻或放电形成。 如此形成的开口减少了经纱和毛刺。

公开(公告)号：US07414305B2

公开(公告)日：2008-08-19

申请号：US11341984

申请日：2006-01-27

申请人： Koji Taya ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Masanori Onodera ,  Junji Tanaka ,  Murugasan Manikam Achari

发明人： Koji Taya ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Masanori Onodera ,  Junji Tanaka ,  Murugasan Manikam Achari

IPC分类号： H01L23/02

CPC分类号： H01L21/6835 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2225/06593 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： A carrier for a stacked-type semiconductor device includes an accommodating section for accommodating stacked semiconductor devices, guide portions guiding the stacked semiconductor devices, and grooves through which a fluid may flow to the accommodating section and to sides of the stacked semiconductor devices. These grooves facilitate the flow of gas or liquid on the sides of the accommodating sections, and it is thus expected that the flow of hot wind during the reflow process and cleaning liquid during the cleaning process can be facilitated. This improves the production yield and the cleaning effects. Holes for connecting the accommodating section to the outside may be provided at corners of the accommodating section. Gas may be guided from the lower side of the accommodating section, so that heat can be efficiently applied to the semiconductor devices and bonding failures therebetween can be reduced. Further, grooves connecting adjacent holes may be provided for accommodating sections adjacent to each other.

摘要翻译： 叠层型半导体器件的载体包括用于容纳堆叠的半导体器件的容纳部分，引导堆叠的半导体器件的引导部分和流体可以通过该沟槽流动到容纳部分和堆叠的半导体器件的侧面的沟槽。 这些凹槽有助于容纳部分侧面上的气体或液体的流动，因此预期在清洗过程中回流过程中的热风和清洗液体的流动可以被方便。 这提高了产量和清洁效果。 用于将容纳部分连接到外部的孔可以设置在容纳部分的角部。 气体可以从容纳部分的下侧引导，使得可以有效地将热量施加到半导体器件，并且可以减少它们之间的接合故障。 此外，可以设置连接相邻孔的槽，用于容纳彼此相邻的部分。

公开(公告)号：US20060170090A1

公开(公告)日：2006-08-03

申请号：US11339352

申请日：2006-01-25

申请人： Yasuhiro Shinma ,  Masanori Onodera ,  Kouichi Meguro ,  Koji Taya ,  Junji Tanaka ,  Junichi Kasai

发明人： Yasuhiro Shinma ,  Masanori Onodera ,  Kouichi Meguro ,  Koji Taya ,  Junji Tanaka ,  Junichi Kasai

IPC分类号： H01L23/02

CPC分类号： H05K1/144 ,  H01L23/49827 ,  H01L23/5387 ,  H01L24/73 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/01004 ,  H01L2924/01087 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/19041 ,  H01L2924/19105 ,  H05K1/023 ,  H05K1/147 ,  H05K1/189 ,  H05K3/361 ,  H05K3/403 ,  H05K2201/09181 ,  H05K2201/10515 ,  H05K2201/10734 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A stacked type semiconductor device includes semiconductor devices, interposers by which the semiconductor devices are stacked, the interposers having electrodes provided on sides thereof, and a connection substrate connecting the electrodes together. The electrodes provided on the sides of the interposers may be connected to the connection substrate by one of an electrically conductive adhesive or an anisotropically conductive film.

摘要翻译： 堆叠型半导体器件包括半导体器件，半导体器件堆叠的插入器，具有设置在其侧面上的电极的插入器以及将电极连接在一起的连接基板。 设置在插入件侧面的电极可以通过导电粘合剂或各向异性导电膜中的一种连接到连接基板。

公开(公告)号：US09142440B2

公开(公告)日：2015-09-22

申请号：US12315417

申请日：2008-12-03

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai ,  Yasuhiro Shinma ,  Koji Taya ,  Junji Tanaka

IPC分类号： H01L21/00 ,  H01L21/683 ,  H01L21/673 ,  H01L25/10 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L21/6835 ,  H01L21/67336 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2225/06513 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/3511

摘要： A method of producing a carrier structure for fabricating a stacked-type semiconductor device includes laminating thin plates for a lower carrier associated with an upper carrier. The method includes forming openings in the thin plates by etching or electric discharge machining. The lower carrier includes a magnet that is buried therein and the magnet maintains contact between the lower carrier and the upper carrier. A thin plate of the laminated thin plates is provided on each opposing surface of the magnet. The lower carrier further includes multiple magnets arranged around a periphery of the lower carrier and through a center region of the lower carrier that is between magnets on the periphery.

摘要翻译： 制造叠层型半导体器件的载体结构的方法包括层叠与上载体相关联的下载体的薄板。 该方法包括通过蚀刻或放电加工在薄板上形成开口。 下载体包括埋在其中的磁体，并且磁体保持下载体和上载体之间的接触。 层叠薄板的薄板设置在磁体的每个相对表面上。 下载体还包括多个磁体，其布置在下载体的周边周围并且穿过位于外围的磁体之间的下载体的中心区域。

公开(公告)号：US08030179B2

公开(公告)日：2011-10-04

申请号：US12556408

申请日：2009-09-09

申请人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

发明人： Masataka Hoshino ,  Junichi Kasai ,  Kouichi Meguro ,  Ryota Fukuyama ,  Yasuhiro Shinma ,  Koji Taya ,  Masanori Onodera ,  Naomi Masuda

IPC分类号： H01L21/00 ,  H01L21/4763

CPC分类号： H01L25/0657 ,  H01L23/3128 ,  H01L23/49575 ,  H01L25/50 ,  H01L2224/02371 ,  H01L2224/05548 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2924/01004 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

摘要翻译： 本发明提供一种半导体器件，其包括堆叠的半导体芯片，每个半导体芯片包括半导体衬底和设置在半导体衬底的侧面上且在其侧面上形成有凹部的第一绝缘层; 设置在凹部的内侧面的中心部的第一金属层; 以及第二金属层，其设置在凹部中并连接到形成在每个半导体芯片上的第一金属层。 本发明还提供一种半导体器件的制造方法。

公开(公告)号：US07884630B2

公开(公告)日：2011-02-08

申请号：US11886139

申请日：2005-03-11

申请人： Eichi Osato ,  Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

发明人： Eichi Osato ,  Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

IPC分类号： G01R31/02

CPC分类号： G01R1/0483 ,  G01R1/0466

摘要： An IC device (10) held on an IC carrier (24) is a double-sided electrode type BGA IC device (10) provided with bump electrodes (14) on a first surface of a package. The IC device has, on a second surface opposite the first surface, (a) a central protrusion (30), (b) a peripheral portion (32) lower than the protrusion by one step, and (c) upper electrodes (18) formed on the peripheral portion of the IC device. The IC carrier is provided with a frame (36), a cover (40), and a holding means (42). The frame forms a device reception space (38) for receiving the IC device. The cover can cover the upper electrodes while in contact with the periphery of the IC device held on the IC carrier. The holding means can hold the IC device on the IC carrier with the cover covering the upper electrodes of the IC device. The IC device can be set in an IC socket while being mounted on the IC carrier.

摘要翻译： 保持在IC载体（24）上的IC器件（10）是在封装的第一表面上设置有凸块电极（14）的双面电极型BGA IC器件（10）。 IC器件在与第一表面相对的第二表面上具有（a）中心突起（30），（b）比突起低一级的周边部分（32），（c）上电极（18） 形成在IC器件的周边部分上。 IC载体设有框架（36），盖（40）和保持装置（42）。 该帧形成用于接收IC设备的设备接收空间（38）。 盖可以覆盖上电极，同时与保持在IC载体上的IC器件的周边接触。 保持装置可以将IC器件保持在IC载体上，盖子覆盖IC器件的上部电极。 该IC器件可以安装在IC载体上而设置在IC插座中。

公开(公告)号：US20060220208A1

公开(公告)日：2006-10-05

申请号：US11394986

申请日：2006-03-30

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junichi Kasai

IPC分类号： H01L23/02

CPC分类号： H01L23/3135 ,  H01L23/3128 ,  H01L24/48 ,  H01L24/73 ,  H01L25/03 ,  H01L25/105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/4554

摘要： A semiconductor device of a stacked type includes a semiconductor chip (1) that is mounted on a substrate (4), a first sealing resin (12) that seals the semiconductor chip (1), a built-in semiconductor device (9) that is placed on the first sealing resin (12), and a second sealing resin (13) that is formed on the substrate (4) and seals the semiconductor chip (1) and the built-in semiconductor device (9). In this semiconductor device, the semiconductor chip (1) and the built-in semiconductor device (9) are electrically connected to the substrate by bonding wires (3).

摘要翻译： 叠层型半导体器件包括安装在基板（4）上的半导体芯片（1），密封半导体芯片（1）的第一密封树脂（12），内置的半导体器件（9） 放置在第一密封树脂（12）和形成在基板（4）上并密封半导体芯片（1）和内置半导体器件（9）的第二密封树脂（13）。 在该半导体器件中，半导体芯片（1）和内置半导体器件（9）通过接合线（3）与基板电连接。

公开(公告)号：US20050269682A1

公开(公告)日：2005-12-08

申请号：US11126739

申请日：2005-05-11

申请人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

发明人： Masanori Onodera ,  Junichi Kasai ,  Kouichi Meguro ,  Junji Tanaka ,  Yasuhiro Shinma ,  Koji Taya

IPC分类号： H01L21/48 ,  H01L23/02 ,  H01L25/10

CPC分类号： H01L25/50 ,  H01L25/105 ,  H01L2221/68318 ,  H01L2224/16 ,  H01L2225/06586 ,  H01L2225/06596 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331

摘要： A carrier for a stacked type semiconductor device includes a lower carrier having a first accommodating portion that accommodates a first semiconductor device, and an upper carrier having a second accommodating portion that accommodates a second semiconductor device stacked on the first semiconductor device so as to be placed in position on the first semiconductor device. It is thus possible to eliminate an additional device used for stacking the semiconductor device, and thereby reduce the cost.

摘要翻译： 叠层型半导体器件的载体包括具有容纳第一半导体器件的第一容纳部分的下载体和具有第二容纳部分的上载体，所述第二容纳部分容纳堆叠在第一半导体器件上的第二半导体器件以便放置 在第一半导体器件上的位置。 因此，可以消除用于堆叠半导体器件的附加装置，从而降低成本。