公开(公告)号：US08883554B2

公开(公告)日：2014-11-11

申请号：US12639115

申请日：2009-12-16

申请人： Junichiro Sakata ,  Tadashi Serikawa

发明人： Junichiro Sakata ,  Tadashi Serikawa

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： In a manufacturing process of a semiconductor device formed using a thin film transistor, an object is to provide a technique by which the number of photomasks can be reduced, manufacturing cost can be reduced, and improvement in productivity and reliability can be achieved. A main point is that a film forming a channel protective layer is formed over an oxide semiconductor layer having a light-transmitting property, a positive photoresist is formed over the film forming a channel protective layer, and a channel protective layer is selectively formed over a channel formation region in the oxide semiconductor layer by using a back surface light exposure method.

摘要翻译： 在使用薄膜晶体管形成的半导体器件的制造工艺中，目的是提供可以减少光掩模数量，降低制造成本，并且可以实现生产率和可靠性的提高的技术。 主要的一点是形成沟道保护层的膜形成在具有透光性的氧化物半导体层之上，在形成沟道保护层的膜上形成正性光致抗蚀剂，并且沟道保护层选择性地形成在 通过使用背面曝光方法在氧化物半导体层中形成沟道形成区域。

公开(公告)号：US09224968B2

公开(公告)日：2015-12-29

申请号：US13552899

申请日：2012-07-19

申请人： Yuji Iwaki ,  Junichiro Sakata ,  Hisao Ikeda ,  Tomoya Aoyama ,  Takaaki Nagata ,  Takahiro Kawakami ,  Satoshi Seo ,  Ryoji Nomura

发明人： Yuji Iwaki ,  Junichiro Sakata ,  Hisao Ikeda ,  Tomoya Aoyama ,  Takaaki Nagata ,  Takahiro Kawakami ,  Satoshi Seo ,  Ryoji Nomura

IPC分类号： H01L51/50 ,  H01L51/00

CPC分类号： H01L51/5048 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0072 ,  H01L51/0081

摘要： An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound.

摘要翻译： 本发明的目的是提供一种发光效率高的发光元件和低电压驱动用发光元件。 另一个目的是通过使用发光元件来提供具有低功耗的发光装置。 另一个目的是通过在显示部分中使用发光装置来提供具有低功耗的电子设备。 发光元件在一对电极之间包括含有第一有机化合物和无机化合物的复合材料的层和包含与含有复合材料的层接触的第二有机化合物的层，其中第二 如果第二有机化合物与无机化合物混合，有机化合物在450-800nm的波长区域中不具有吸收光谱的峰值。

公开(公告)号：US09202827B2

公开(公告)日：2015-12-01

申请号：US12641446

申请日：2009-12-18

申请人： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

发明人： Jun Koyama ,  Junichiro Sakata ,  Tetsunori Maruyama ,  Yuki Imoto ,  Yuji Asano ,  Junichi Koezuka

IPC分类号： H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1255 ,  H01L27/12 ,  H01L27/1225 ,  H01L27/127 ,  H01L28/20 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.

摘要翻译： 通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅 在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。 因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

公开(公告)号：US09196858B2

公开(公告)日：2015-11-24

申请号：US13620903

申请日：2012-09-15

申请人： Junichiro Sakata

发明人： Junichiro Sakata

IPC分类号： H01L21/443 ,  H01L51/50 ,  H01L51/56

CPC分类号： H01L51/5088 ,  H01L51/5092 ,  H01L51/56

摘要： An object of the present invention to improve reliability of a light emitting device having a mixed layer including an organic compound and metal oxide without reducing productivity. The above object is solved in such a way that after forming the mixed layer including the organic compound and metal oxide, the mixed layer is exposed to a nitrogen gas atmosphere without being exposed to a gas atmosphere including oxygen, and then a stacked film is formed over the mixed layer without exposing the mixed layer to a gas atmosphere including oxygen.

摘要翻译： 本发明的目的是提高具有包含有机化合物和金属氧化物的混合层的发光装置的可靠性，而不降低生产率。 上述目的被解决为在形成包含有机化合物和金属氧化物的混合层之后，将混合层暴露于氮气气氛中而不暴露于包括氧的气体气氛，然后形成层叠膜 在混合层之上，而不将混合层暴露于包括氧的气体气氛中。

公开(公告)号：US09136389B2

公开(公告)日：2015-09-15

申请号：US12581200

申请日：2009-10-19

申请人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Toshinari Sasaki ,  Miyuki Hosoba ,  Shunichi Ito ,  Junichiro Sakata

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/45 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/45 ,  H01L29/78618

摘要： An object is to control composition and a defect of an oxide semiconductor. Another object is to increase field effect mobility of a thin film transistor and to obtain a sufficient on-off ratio with off current suppressed. The oxide semiconductor is represented by InMO3(ZnO)n (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al, and n is a non-integer number of greater than or equal to 1 and less than 50) and further contains hydrogen. In this case, the concentration of Zn is made to be lower than the concentrations of In and M (M is one or a plurality of elements selected from Ga, Fe, Ni, Mn, Co, and Al). In addition, the oxide semiconductor has an amorphous structure. Here, n is preferably a non-integer number of greater than or equal to 50, more preferably less than 10.

摘要翻译： 目的是控制氧化物半导体的组成和缺陷。 另一个目的是增加薄膜晶体管的场效应迁移率，并获得足够的开关比，同时抑制截止电流。 氧化物半导体由InMO 3（ZnO）n（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素表示，n是大于或等于1的非整数） 小于50），还含有氢。 在这种情况下，使Zn的浓度低于In和M的浓度（M是选自Ga，Fe，Ni，Mn，Co和Al中的一种或多种元素）。 此外，氧化物半导体具有非晶结构。 这里，n优选为大于或等于50，更优选小于10的非整数。

公开(公告)号：US08946700B2

公开(公告)日：2015-02-03

申请号：US13552805

申请日：2012-07-19

申请人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

发明人： Kengo Akimoto ,  Junichiro Sakata ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78618 ,  H01L27/1225 ,  H01L29/7869

摘要： An object is to provide a method for manufacturing a highly reliable semiconductor device including thin film transistors which have stable electric characteristics and are formed using an oxide semiconductor. A method for manufacturing a semiconductor device includes the steps of: forming an oxide semiconductor film over a gate electrode with a gate insulating film interposed between the oxide semiconductor film and the gate electrode, over an insulating surface; forming a first conductive film including at least one of titanium, molybdenum, and tungsten, over the oxide semiconductor film; forming a second conductive film including a metal having lower electronegativity than hydrogen, over the first conductive film; forming a source electrode and a drain electrode by etching of the first conductive film and the second conductive film; and forming an insulating film in contact with the oxide semiconductor film, over the oxide semiconductor film, the source electrode, and the drain electrode.

摘要翻译： 本发明的目的是提供一种用于制造具有稳定电特性并使用氧化物半导体形成的薄膜晶体管的高可靠性半导体器件的方法。 一种制造半导体器件的方法包括以下步骤：在绝缘表面上，在栅极上形成氧化物半导体膜，其中栅极绝缘膜置于氧化物半导体膜和栅电极之间; 在所述氧化物半导体膜上形成包括钛，钼和钨中的至少一种的第一导电膜; 在所述第一导电膜上形成包含具有比氢更低的电负性的金属的第二导电膜; 通过蚀刻第一导电膜和第二导电膜形成源电极和漏电极; 以及在所述氧化物半导体膜，所述源电极和所述漏极上形成与所述氧化物半导体膜接触的绝缘膜。

公开(公告)号：US08927114B2

公开(公告)日：2015-01-06

申请号：US10575120

申请日：2005-11-24

申请人： Ryoji Nomura ,  Satoshi Seo ,  Hiroko Abe ,  Takako Takasu ,  Hideko Inoue ,  Hisao Ikeda ,  Daisuke Kumaki ,  Junichiro Sakata

发明人： Ryoji Nomura ,  Satoshi Seo ,  Hiroko Abe ,  Takako Takasu ,  Hideko Inoue ,  Hisao Ikeda ,  Daisuke Kumaki ,  Junichiro Sakata

IPC分类号： H01L51/54 ,  H01L51/50 ,  H01L51/00

CPC分类号： H01L51/5052 ,  H01L51/0062 ,  H01L51/0094 ,  H01L51/5016 ,  Y10S428/917

摘要： A layer included in an electroluminescent element is required to be thickened to optimize light extraction efficiency of the electroluminescent element and to prevent short-circuit between electrodes. However, in a conventional element material, desired light extraction efficiency cannot be accomplished since drive voltage rises or power consumption is increased as the element material is thickened. A composite is formed by mixing a conjugated molecule having low ionization potential and a substance having an electron-accepting property to the conjugated molecule. A composite layer included in an element is formed using the composite as an element material. The composite layer is arranged between a first electrode and a light emitting layer or between a second electrode and a light emitting layer. The composite layer has high conductivity; therefore, drive voltage does not rise even if a film thickness is increased. Thus, an electroluminescent element which can prevent short-circuit of an electrode can be provided.

公开(公告)号：US08841163B2

公开(公告)日：2014-09-23

申请号：US13399369

申请日：2012-02-17

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroki Ohara

IPC分类号： H01L21/00 ,  H01L29/10 ,  H01L21/324 ,  H01L21/28 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

摘要翻译： 一种用于大功率应用的半导体器件，其中提供了具有高质量生产率的新型半导体材料。 形成氧化物半导体膜，然后对暴露的氧化物半导体膜进行第一热处理，以便减少氧化物半导体膜中的杂质如水分或氢。 接下来，为了进一步减少氧化物半导体膜中的杂质，例如水分或氢气，通过离子注入法，离子掺杂法等将氧添加到氧化物半导体膜中，之后，第二热处理为 在暴露的氧化物半导体膜上进行。

公开(公告)号：US08818538B2

公开(公告)日：2014-08-26

申请号：US11585139

申请日：2006-10-24

申请人： Junichiro Sakata

发明人： Junichiro Sakata

IPC分类号： G06F17/00

CPC分类号： G06F3/16 ,  G06F3/0481 ,  G06F17/30772 ,  G10H1/0041 ,  G11B27/034 ,  G11B27/105 ,  G11B27/34 ,  G11B2020/10546 ,  G11B2220/213 ,  G11B2220/2545 ,  H04N21/4312 ,  H04N21/4825

摘要： Audio data are played back by a personal computer a relationship with a playback process recognized easily. Displays showing the contents of play lists are arranged and displayed so that the contents become continuous in sequence in a playback sequence from content that is currently being played back from a display of an operation element that causes an image of a playback process to appear or from a display showing the content which is currently being played back. When the playback of one piece of content of one play list from among a plurality of play lists is terminated and one piece of content of an other play list is played back, at least the content that is currently being played back and content to be subsequently played back are displayed so that the contents can be distinguished.

摘要翻译： 音频数据由个人计算机与容易识别的回放过程的关系回放。 显示播放列表的内容的显示被布置和显示，使得内容从播放过程的图像的显示器上显示的当前正在播放的内容的播放顺序依次连续显示，或者从 显示当前正在播放的内容的显示器。 当多个播放列表中的一个播放列表的一条内容的回放被终止，并且播放另一个播放列表的一条内容时，至少播放当前正在播放的内容和随后的内容 显示回放，以便区分内容。

公开(公告)号：US08796078B2

公开(公告)日：2014-08-05

申请号：US12787757

申请日：2010-05-26

申请人： Toshinari Sasaki ,  Hiroki Ohara ,  Junichiro Sakata

发明人： Toshinari Sasaki ,  Hiroki Ohara ,  Junichiro Sakata

IPC分类号： H01L21/336 ,  H01L21/786

CPC分类号： H01L29/66969 ,  H01L21/02164 ,  H01L21/02565 ,  H01L21/30604 ,  H01L29/45 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

摘要： An object is to provide a highly reliable semiconductor device including a thin film transistor having stable electric characteristics. In addition, another object is to manufacture a highly reliable semiconductor device at low cost with high productivity. In a method for manufacturing a semiconductor device including a thin film transistor including an oxide semiconductor layer as a channel formation region, the oxide semiconductor layer is heated under a nitrogen atmosphere to lower its resistance, thereby forming a low-resistance oxide semiconductor layer. Further, resistance of a region of the low-resistance oxide semiconductor layer, which is overlapped with a gate electrode layer, is selectively increased, thereby forming a high-resistance oxide semiconductor layer. Resistance of the oxide semiconductor layer is increased by forming a silicon oxide film in contact with the oxide semiconductor layer by a sputtering method.

摘要翻译： 目的在于提供一种具有稳定电特性的薄膜晶体管的高度可靠的半导体装置。 此外，另一个目的是以高生产率以低成本制造高度可靠的半导体器件。 在包括具有作为沟道形成区域的氧化物半导体层的薄膜晶体管的半导体器件的制造方法中，在氮气气氛下加热氧化物半导体层以降低其电阻，从而形成低电阻氧化物半导体层。 此外，选择性地增加与栅电极层重叠的低电阻氧化物半导体层的区域的电阻，从而形成高电阻氧化物半导体层。 通过溅射法形成与氧化物半导体层接触的氧化硅膜，可提高氧化物半导体层的电阻。