公开(公告)号：US08883554B2

公开(公告)日：2014-11-11

申请号：US12639115

申请日：2009-12-16

申请人： Junichiro Sakata ,  Tadashi Serikawa

发明人： Junichiro Sakata ,  Tadashi Serikawa

IPC分类号： H01L21/00 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： In a manufacturing process of a semiconductor device formed using a thin film transistor, an object is to provide a technique by which the number of photomasks can be reduced, manufacturing cost can be reduced, and improvement in productivity and reliability can be achieved. A main point is that a film forming a channel protective layer is formed over an oxide semiconductor layer having a light-transmitting property, a positive photoresist is formed over the film forming a channel protective layer, and a channel protective layer is selectively formed over a channel formation region in the oxide semiconductor layer by using a back surface light exposure method.

摘要翻译： 在使用薄膜晶体管形成的半导体器件的制造工艺中，目的是提供可以减少光掩模数量，降低制造成本，并且可以实现生产率和可靠性的提高的技术。 主要的一点是形成沟道保护层的膜形成在具有透光性的氧化物半导体层之上，在形成沟道保护层的膜上形成正性光致抗蚀剂，并且沟道保护层选择性地形成在 通过使用背面曝光方法在氧化物半导体层中形成沟道形成区域。

公开(公告)号：US07132373B2

公开(公告)日：2006-11-07

申请号：US10491527

申请日：2002-09-30

申请人： Koji Fukuhisa ,  Akira Nakajima ,  Kenji Shinohara ,  Toshiya Watanabe ,  Hisashi Ohsaki ,  Tadashi Serikawa

发明人： Koji Fukuhisa ,  Akira Nakajima ,  Kenji Shinohara ,  Toshiya Watanabe ,  Hisashi Ohsaki ,  Tadashi Serikawa

IPC分类号： H01L21/469

CPC分类号： C01B13/145 ,  C01P2002/01 ,  C01P2004/03 ,  C23C8/02 ,  C23C8/36 ,  C23C14/08 ,  C23C14/083 ,  C23C14/086 ,  C23C14/5826 ,  C23C18/14 ,  C23C26/00 ,  H01L21/02175 ,  H01L21/02186 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/02356 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31691 ,  H01L31/022466 ,  H01L31/1884

摘要： The present invention provides a method for producing a crystalline metal oxide thin film by first depositing a substantially amorphous metal oxide film, and thereafter, as a post treatment, exposing the film to low temperature plasma in a high frequency electric field at 180° C. or less, and the crystalline metal oxide thin film produced by this method. Because the producing method according to the present invention allows a dense and homogenous crystalline metal oxide thin film to be formed onto a substrate at a low temperature without requiring active heat treatment, a metal oxide thin film having desirable characteristics can be formed without damaging the characteristics of a substrate even if the substrate has comparatively low heat resistance.

摘要翻译： 本发明提供一种通过首先沉积基本无定形的金属氧化物膜，然后作为后处理，在180℃的高频电场中将膜暴露于低温等离子体的方法来制造结晶金属氧化物薄膜。 以下，以及通过该方法制造的结晶金属氧化物薄膜。 由于根据本发明的制造方法允许在低温下在基板上形成致密且均匀的结晶金属氧化物薄膜而不需要主动热处理，所以可以形成具有期望特性的金属氧化物薄膜而不损害特性 即使基板具有较低的耐热性。

公开(公告)号：US5248630A

公开(公告)日：1993-09-28

申请号：US857944

申请日：1992-03-26

申请人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

发明人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

IPC分类号： H01L21/205 ,  H01L21/321 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L29/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/321 ,  H01L29/78675 ,  Y10S438/909

摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.

摘要翻译： 根据本发明的设置在基板上的薄膜硅半导体器件包括晶格常数小于单晶晶格和小晶粒尺寸的薄多晶硅薄膜。 该薄多晶硅膜可以通过溅射沉积法将薄的非晶硅膜沉积在具有3.5Pa或更低的压力的惰性气体中并在10秒或更短的时间内退火薄的非晶硅膜来获得， 多结晶。 包括这种具有小晶格常数的薄多晶硅膜的薄膜硅半导体器件具有包括100cm 2 / Vxs或更高的载流子迁移率的优异特性。

公开(公告)号：US5132754A

公开(公告)日：1992-07-21

申请号：US222966

申请日：1988-07-21

申请人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

发明人： Tadashi Serikawa ,  Seiichi Shirai ,  Akio Okamoto ,  Shirou Suyama

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/321 ,  H01L21/324 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/04 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/321 ,  H01L29/78675

摘要： A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.