摘要:
A piston ring includes: a refined steel including: carbon C in a range of 0.20% mass to 0.90% mass, silicon Si in a range of 0.10% mass to less than 0.60% mass, manganese Mn in a range of 0.20% mass to 1.50% mass, chromium Cr in a range of 0.30% mass to 2.00% mass, and a remnant including: iron Fe, and an unavoidable impurity. A parameter A calculated from the following expression (1) based on contents of the Si, Mn and Cr is 9.0 or less: parameter A=8.8 Si+1.6 Mn+1.7 Cr—expression (1). A parameter B calculated from the following expression (2) based on contents of the C, Si, Mn and Cr is 10.8 or more: parameter B=36 C+4.2 Si+3.8 Mn+4.5 Cr—expression (2).
摘要:
A piston ring includes: a refined steel including: carbon C in a range of 0.20% mass to 0.90% mass, silicon Si in a range of 0.10% mass to less than 0.60% mass, manganese Mn in a range of 0.20% mass to 1.50% mass, chromium Cr in a range of 0.30% mass to 2.00% mass, and a remnant including: iron Fe, and an unavoidable impurity. A parameter A calculated from the following expression (1) based on contents of the Si, Mn and Cr is 9.0 or less: parameter A=8.8 Si+1.6 Mn+1.7 Cr—expression (1). A parameter B calculated from the following expression (2) based on contents of the C, Si, Mn and Cr is 10.8 or more: parameter B=36 C+4.2 Si+3.8 Mn+4.5 Cr—expression (2).
摘要:
An aluminum alloy-made part of the present invention includes an aluminum alloy, and an anodic oxide coating which coats a surface of the aluminum alloy and contains at least one of silver and copper. The aluminum alloy-made part is capable of enhancing the heat conduction performance in the interface between the anodic oxide coating and the base material and the heat radiation performance on the surface of the part concerned, thereby making it possible to make the heat resistance and the adhesion resistance compatible with good beat conductivity and good heat radiation property.
摘要:
According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region.
摘要:
According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region.
摘要:
A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film.
摘要:
[Problem] To control a camber angle to an adequate value by the use of a lateral force acting on a wheel, without causing a displacement of a tire ground contact point.[Means for solution] A suspension device includes a link mechanism replaceable by a first virtual link 11 which, when a lateral force acts at a tire ground contact point, inclines a wheel in a camber angle direction with respect to a vehicle body so as to increase the lateral force, and a second virtual link 12 which is connected virtually and rotatably between the first virtual link 11 and the vehicle body 1 and which is arranged to allow the wheel 2 to move in the up-and-down direction with respect to the vehicle body 1 in accordance with a load variation of the wheel in the up-and-down direction. A rotation center A in the camber angle direction and a rotation center B in the up-and-down direction, of the wheel with respect to the vehicle body are arranged so that a lateral movement amount of the tire ground contact point due to a change in the position of the first virtual link 11 is canceled by a lateral movement amount of the tire ground contact point due to a change in the position of the second virtual link 12.
摘要:
A video-audio recording and reproducing apparatus (101) has a built-in stereo microphone (21a, 21b) and an external microphone connection terminal (32). The external microphone connection terminal (32) is connected to a binaural microphone (3) to be attached to the ears of a photographer (300). When the binaural microphone (3) is used to collect ambient sounds, an audio signal to be recorded on a recording medium is switched from an audio signal from the built-in stereo microphone (21a, 21b) to a binaural audio signal from the binaural microphone (3). The photographer (300) puts the binaural microphone (3 (31a, 31b)) on his or her ears and collects ambient sounds around the photographer (300) including a sound emanating from an object. The object is photographed with a camera unit (11). The recording medium records the binaural audio signal, a photographed video signal, and a binaural flag signal.
摘要:
An image noise reducing method that can properly reduce both block noise and mosquito noise without deterioration of the image quality is provided. The method includes creating a first luminance component image data with the boundaries of the blocks thereof smoothened, creating a second luminance component image data with its entirety smoothened from the first luminance component image data, creating edge image data by subtracting the second luminance component image data from the first luminance component image data, creating corrected edge image data by applying correction to the edge image data under given conditions, and creating third luminance component image data by adding the corrected edge image data to the second luminance component image data. For color-difference component image data, first color-difference component image data with its entirety smoothened is created from the color-difference component image data. The third luminance component image data and the first color-difference component image data are finally outputted.
摘要:
A method for reproducing sounds from signals, which are supplied from a same sound source through a pair of localization filters by using a pair of transducers disposed apart from each other and for controlling the localization of a sound image in such a way to make a listener feel that he hears sounds from a virtual sound source which is localized at a desired sound image location being different from the positions of the transducers. When performing this method, a signal for measurement reproduced at each sound image location is measured at the listener's position as data to be used for estimating head-related transfer characteristics. Then, the head-related transfer characteristics corresponding to each sound image location are estimated from the measured data. Subsequently, transfer characteristics of the pair of the localization filters, which characteristics of which are necessary for localizing a sound image at each sound image location, are calculated on the basis of the estimated head-related transfer characteristics. Next, a scaling processing is performed to obtain the coefficients of the pair of the localization filters as an impulse response. Then, the coefficients obtained by the scaling processing are set in a pair of convolvers. Finally, sound signals are supplied from the sound source to the pair of the convolvers. Further, outputs of the pair of the convolvers are reproduced from the pair of the transducers.