公开(公告)号：US06422172B1

公开(公告)日：2002-07-23

申请号：US09040404

申请日：1998-03-18

申请人： Jyunichi Tanaka ,  Toru Otsubo ,  Toshio Masuda ,  Ichiro Sasaki ,  Tetsunori Kaji ,  Katsuya Watanabe

发明人： Jyunichi Tanaka ,  Toru Otsubo ,  Toshio Masuda ,  Ichiro Sasaki ,  Tetsunori Kaji ,  Katsuya Watanabe

IPC分类号： C23F102

CPC分类号： H01J37/32082 ,  C23C16/505 ,  H01J37/32422

摘要： A plasma processing apparatus has plasma generating means including a means for generating capacitive coupled discharge and a means for radiating electromagnetic waves, so that the energy state of electrons is independently controlled by a combination of a plasma due to capacitive coupled discharge and a plasma due to radiation of electromagnetic waves of a high-frequency, to thereby control the occurrence of radical species, and thereby establishing a compatibility, for example, between high selective etching and high accuracy and high speed in etching or between film quality and film formation rate. Since the density distribution of the plasma can be controlled without any change in hardware configuration by adjusting distributions of the power for capacitive coupled discharge and the power for radiation of electromagnetic waves, the entire surface of a large-sized substrate can be etched at a high accuracy into a fine pattern. The apparatus is also intended to prevent the occurrence of dust caused by plasma processing and changes in characteristics of plasma processing, and hence to enhance productivity of semiconductor devices and/or liquid crystal display elements.

摘要翻译： 等离子体处理装置具有等离子体产生装置，其包括用于产生电容耦合放电的装置和用于辐射电磁波的装置，从而由​​于电容耦合放电引起的等离子体和等离子体的组合独立地控制电子的能量状态，由于 辐射高频的电磁波，从而控制自由基物质的发生，从而在高选择性蚀刻和高精度和高速蚀刻或膜质量和成膜速率之间建立兼容性。 由于可以通过调节用于电容耦合放电的功率的分布和电磁波的辐射功率来控制等离子体的密度分布而没有硬件配置的任何变化，因此可以将高尺寸基板的整个表面以高 精确到精细模式。 该装置还旨在防止等离子体处理引起的灰尘的发生和等离子体处理的特性的变化，从而提高半导体器件和/或液晶显示元件的生产率。

公开(公告)号：US06245190B1

公开(公告)日：2001-06-12

申请号：US09048075

申请日：1998-03-26

申请人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

发明人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

IPC分类号： H05H146

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32678

摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.

摘要翻译： 一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性， 通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。 在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。 通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。 由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。 磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。

公开(公告)号：US20060144518A1

公开(公告)日：2006-07-06

申请号：US11366621

申请日：2006-03-03

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

摘要翻译： 等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。 在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。 还提供减压元件。 此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。 电极盖设置在另一个电极处，电极间的间隙为30mm至100mm。 电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

公开(公告)号：US06197151B1

公开(公告)日：2001-03-06

申请号：US09564788

申请日：2000-05-05

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H05H100

CPC分类号： H01J37/32082 ,  H01J37/32678

摘要： A plasma processing apparatus comprising a vacuum processing chamber, a plasma generating means including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and a evacuating means for evacuating the vacuum processing chamber, which further comprises a high frequency electric power source for applying an electric power of a VHF band from 50 MHz to 200 MHz between the pair of electrodes; and a magnetic field forming means for forming a static magnetic field or a low frequency magnetic field larger than 10 gausses and smaller than 110 gausses in a direction intersecting an electric field generated between the pair of electrodes and the vicinity by the high frequency electric power source; therein the magnetic field forming means being set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position in the opposite side of the sample table from the middle of the both electrodes; an electron cyclotron resonance region being formed between the both electrodes by the magnetic field and the electric field.

摘要翻译： 一种等离子体处理装置，包括真空处理室，包括一对电极的等离子体产生装置，用于在真空处理室内安装待处理样品并且还用作其中一个电极的样品台，以及用于抽真空的抽空装置 所述真空处理室还包括用于在所述一对电极之间施加50MHz至200MHz的VHF频带的电力的高频电源; 以及磁场形成装置，用于在与所述一对电极之间产生的电场和由所述高频电源附近产生的电场的方向上形成大于10高斯并且小于110高斯的静态磁场或低频磁场 ; 其中，磁场形成装置被设置成使得沿着样品台的表面的方向上的磁场分量变得最大的部分被带到样品台的与两者的中间相反的一侧的位置 电极 通过磁场和电场在两个电极之间形成电子回旋共振区域。

公开(公告)号：US6129806A

公开(公告)日：2000-10-10

申请号：US808805

申请日：1997-02-28

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H05H1/46 ,  C23F4/00

CPC分类号： H01J37/32082 ,  H01J37/32678

摘要： A plasma processing apparatus and method are provided which are capable of easily performing precise working of a fine pattern on a large sized sample having a diameter of 300 mm or larger, and also capable of improving selectivity during micro processing. The apparatus includes a vacuum processing chamber, a plasma generating arrangement including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and an evacuating means for evacuating the vacuum processing chamber. The apparatus further includes a high frequency electric power source for applying an electric power of VHF band from 50 MHz to 200 MHz between the pair of electrodes. A magnetic field forming structure is also provided for forming a static magnetic field or a low frequency magnetic field larger than 10 gauss and smaller than 110 gauss in a direction intersecting an electric field generated between the pair of electrodes and in the vicinity thereof by the high frequency electric power source. The magnetic field forming structure is set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position on the opposite side of the sample table from the middle of the two electrodes. As a result, an electron cyclotron resonance region is formed between the upper and lower electrodes by the magnetic field and the electric field.

摘要翻译： 提供一种等离子体处理装置和方法，其能够容易地对直径为300mm以上的大尺寸样品进行精细图案的精确加工，并且还能够提高微加工期间的选择性。 该装置包括真空处理室，包括一对电极的等离子体产生装置，用于在真空处理室内安装待处理样品并且还用作其中一个电极的样品台，以及抽真空装置 处理室。 该装置还包括用于在一对电极之间施加50MHz至200MHz的VHF频带的电力的高频电源。 还提供了一种磁场形成结构，用于在与一对电极之间产生的电场相交的方向上形成大于10高斯并且小于110高斯的静态磁场或低频磁场，并且在其附近形成高 频率电源。 磁场形成结构被设定为使得沿着样品台的表面的方向上的磁场分量变得最大的部分被带到样品台的与两个电极的中间相反的一侧的位置 。 结果，通过磁场和电场在上电极和下电极之间形成电子回旋共振区域。

公开(公告)号：US06902683B1

公开(公告)日：2005-06-07

申请号：US09565536

申请日：2000-05-05

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment in which said sample is placed, and the environment is evacuated to a pressure condition for processing said sample. The processing gas is then formed into a plasma under the pressure condition, the sample is processed by the plasma, and a pulse bias voltage having a pulse cycle of 0.1 μm to 10 μm is applied to the sample.

摘要翻译： 提供了一种等离子体处理方法，其包括将样品放置在设置在真空处理室中的电极中的一个上，并通过静电吸引力将样品保持在电极上。 将处理气体引入到其中放置所述样品的环境中，并且将环境抽真空至用于处理所述样品的压力条件。 然后将处理气体在压力条件下形成等离子体，样品由等离子体处理，并且将具有0.1mum至10um的脉冲周期的脉冲偏置电压施加到样品。

公开(公告)号：US20050082006A1

公开(公告)日：2005-04-21

申请号：US10985052

申请日：2004-11-10

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover s disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

摘要翻译： 等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。 在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。 还提供减压元件。 此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。 设置在另一个电极处的电极盖和电极之间的间隙为30mm至100mm。 电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

公开(公告)号：US5759424A

公开(公告)日：1998-06-02

申请号：US409077

申请日：1995-03-22

申请人： Mitsuko Imatake ,  Ichiro Sasaki ,  Toru Otsubo ,  Hitoshi Tamura ,  Takashi Kamimura

发明人： Mitsuko Imatake ,  Ichiro Sasaki ,  Toru Otsubo ,  Hitoshi Tamura ,  Takashi Kamimura

IPC分类号： H01J37/32 ,  H05H1/00 ,  G01N21/00

CPC分类号： H01J37/32935 ,  H01J37/3299

摘要： A plasma processing apparatus is provided with a processing chamber having at least a pair of opposing windows to allow observation of the interior thereof, a plasma generation unit for generating a plasma in the processing chamber, a plasma light emission monitoring unit arranged externally of the processing chamber for monitoring the light emission of the plasma through one of the pair of opposing windows, a reference light irradiation unit for irradiating a reference light to the plasma light emission monitoring unit from that window of the pair of opposing windows which is opposite to the plasma light emission monitoring unit through the pair of opposing windows, and a control for controlling a plasma processing state of the substrate to be processed by comparing the data on the light emission of the plasma monitored by the plasma light emission unit and the reference light.

摘要翻译： 等离子体处理装置具有处理室，该处理室具有至少一对相对的窗口以允许观察其内部;等离子体产生单元，用于在所述处理室中产生等离子体;等离子体发光监测单元，其布置在所述处理的外部 用于通过所述一对相对窗口中的一个监视等离子体的发光的参考光照射单元，用于从与所述等离子体相对的所述一对相对窗口的所述窗口向等离子体发光监测单元照射参考光 通过一对相对窗口的发光监视单元，以及用于通过比较由等离子体发光单元监视的等离子体的发光的数据和参考光来控制待处理的基板的等离子体处理状态的控制。

公开(公告)号：US4985109A

公开(公告)日：1991-01-15

申请号：US475889

申请日：1990-02-06

申请人： Toru Otsubo ,  Mitsuo Tokuda ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki ,  Kazuhiro Ohara ,  Hirohisa Usuami ,  Junzou Azuma

发明人： Toru Otsubo ,  Mitsuo Tokuda ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki ,  Kazuhiro Ohara ,  Hirohisa Usuami ,  Junzou Azuma

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32357

摘要： A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber. A slot plate functioning as an antenna is disposed in the cavity resonator in opposition to a surface of the substrate for enabling radiation of the resonated microwaves to the plasma processing chamber through the separation plate, the slot plate including at least one set of circumferentially extending slots for enabling radiation of resonated microwaves.

公开(公告)号：USRE33424E

公开(公告)日：1990-11-06

申请号：US254964

申请日：1988-10-07

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22

CPC分类号： G01B11/22

摘要： An apparatus .Iadd.and method .Iaddend.for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.