公开(公告)号：US4985109A

公开(公告)日：1991-01-15

申请号：US475889

申请日：1990-02-06

申请人： Toru Otsubo ,  Mitsuo Tokuda ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki ,  Kazuhiro Ohara ,  Hirohisa Usuami ,  Junzou Azuma

发明人： Toru Otsubo ,  Mitsuo Tokuda ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki ,  Kazuhiro Ohara ,  Hirohisa Usuami ,  Junzou Azuma

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32357

摘要： A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber. A slot plate functioning as an antenna is disposed in the cavity resonator in opposition to a surface of the substrate for enabling radiation of the resonated microwaves to the plasma processing chamber through the separation plate, the slot plate including at least one set of circumferentially extending slots for enabling radiation of resonated microwaves.

公开(公告)号：US5134965A

公开(公告)日：1992-08-04

申请号：US538150

申请日：1990-06-14

申请人： Mitsuo Tokuda ,  Junzou Azuma ,  Toru Otsubo ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki

发明人： Mitsuo Tokuda ,  Junzou Azuma ,  Toru Otsubo ,  Yasuhiro Yamaguchi ,  Ichirou Sasaki

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  H01J37/32

CPC分类号： C23C16/45502 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32247 ,  H01J37/32449 ,  H01J2237/3321

摘要： Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate.Further disclosed is a plasma processing apparatus and a method therefor, the apparatus comprising; a plasma chamber for maintaining plasma generated in the inside of the plasma chamber so as to perform plasma processing; a first microwave accumulating and intensifying cavity resonance chamber connected with the plasma chamber through a first slot plate; a second microwave accumulating and intensifying cavity resonance chamber connected with the first cavity resonance chamber through a second slot plate parallel to the first slot plate; and a microwave generator for leading a microwave into the second cavity resonance chamber through a waveguide.

摘要翻译： 公开了一种等离子体CVD装置及其方法，该装置包括：微波产生部分; 用于使从微波产生部供给的微波共振的同轴空腔谐振器; 设置在空腔谐振器的轴的下部的多个气体导入口和用于引入所提供的CVD气体的空腔谐振器的周壁部; 以及等离子体产生室，其中CVD气体通过气体引入入口进入等离子体发生室并使其均匀地流动到衬底的表面上受到微波在空腔谐振器中通过谐振强化并通过耦合辐射 使得产生均匀的等离子体，从而在衬底的表面上形成薄膜。 另外公开了一种等离子体处理装置及其方法，该装置包括： 等离子体室，用于保持等离子体室内部产生的等离子体，以进行等离子体处理; 通过第一槽板与等离子体室连接的第一微波积聚和增强腔共振腔; 第二微波积聚和增强腔谐振室，通过与第一槽板平行的第二槽板与第一空腔共振室连接; 以及微波发生器，用于通过波导将微波引导到第二腔谐振室。

公开(公告)号：US5531862A

公开(公告)日：1996-07-02

申请号：US277017

申请日：1994-07-19

申请人： Toru Otsubo ,  Yasumichi Suzuki ,  Shinji Sasaki ,  Kazuhiro Ohara ,  Ichirou Sasaki

发明人： Toru Otsubo ,  Yasumichi Suzuki ,  Shinji Sasaki ,  Kazuhiro Ohara ,  Ichirou Sasaki

IPC分类号： C23C14/56 ,  C23C16/44 ,  H01J37/32 ,  H01L21/306 ,  H01L21/00

CPC分类号： H01L21/02046 ,  C23C14/564 ,  C23C16/4407 ,  H01J37/32431 ,  H01J2237/022 ,  Y10S438/906 ,  Y10S438/963

摘要： A method of and apparatus removes foreign particles in a vacuum or in a dry atmosphere before and in continuation to performing a dry process, such as a dry etching or a sputtering process. For this purpose, the foreign particles are separated from a substrate by subjecting the foreign particles to a force for separating the foreign particles from the substrate and a vibrating force for vibrating the foreign particles at the same time, and then the frequency of vibration is changed to match the resonant frequency of a vibration system formed by each of the foreign particles and the substrate, thereby applying a vibration energy to the foreign particles due to resonance. The separated foreign particles floating in a plasma are drawn to an electrode having a potential which is controlled such that a flowing-in of electrons is reduced, and the particles are discharged from the inside of the plasma. In this way, the foreign particles can be reduced and the yield of the product in manufacturing semiconductors and TFTs can be promoted. Further, a cleaning step, a film forming operation, an etching process and the like can continuously be processed, thereby achieving a reduction in steps and a promotion in productivity.

摘要翻译： 一种和设备的方法和装置在进行干法或干法蚀刻或溅射工艺之前和之后的真空或干燥气氛中去除异物。 为此目的，通过使外来颗粒受到来自基板的异物分离的力和用于同时振动异物的振动力，使外来颗粒与基板分离，然后振动频率发生变化 以匹配由每个异物和衬底形成的振动系统的谐振频率，从而由于共振而向外来颗粒施加振动能。 将等离子体中漂浮的分离的异物吸引到具有被控制的电位的电极，使得电子的流入减少，并且粒子从等离子体的内部排出。 以这种方式，可以减少外来颗粒，并且可以促进制造半导体和TFT的产品的产率。 此外，可以连续地处理清洁步骤，成膜操作，蚀刻处理等，从而实现步骤的降低和生产率的提高。

公开(公告)号：US5304277A

公开(公告)日：1994-04-19

申请号：US767798

申请日：1991-09-30

申请人： Kazuhiro Ohara ,  Toru Otsubo ,  Ichirou Sasaki

发明人： Kazuhiro Ohara ,  Toru Otsubo ,  Ichirou Sasaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32247 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32688

摘要： A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing coupled therewith, and a cavity resonator for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window through which microwaves are introduced and having slots for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.

摘要翻译： 等离子体处理装置包括等离子体处理室，其具有用于放置待等离子体处理的基板的台，排气口和与其结合的等离子体处理的气体引入喷嘴，以及用于以真空方式关闭等离子体处理室的空腔谐振器， 通过其中引入微波的微波引入窗口并具有用于向等离子体处理室辐射微波的槽。 具有增加的电磁场强度的微波被提供给处理室以产生等离子体以实现衬底的处理。 仅在处理室的内壁附近形成等离子体的扩散被抑制以减少损耗的区域。

公开(公告)号：US5762814A

公开(公告)日：1998-06-09

申请号：US196430

申请日：1994-02-15

申请人： Kazuhiro Ohara ,  Toru Otsubo ,  Ichirou Sasaki

发明人： Kazuhiro Ohara ,  Toru Otsubo ,  Ichirou Sasaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22 ,  C23C16/00 ,  C23F1/02

CPC分类号： H01J37/32247 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32688

摘要： A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing coupled therewith, and a cavity resonator for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window through which microwaves are introduced and having slots for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.

摘要翻译： 等离子体处理装置包括等离子体处理室，其具有用于放置待等离子体处理的基板的台，排气口和与其结合的等离子体处理的气体引入喷嘴，以及用于以真空方式关闭等离子体处理室的空腔谐振器， 通过其中引入微波的微波引入窗口并具有用于向等离子体处理室辐射微波的槽。 具有增加的电磁场强度的微波被提供给处理室以产生等离子体以实现衬底的处理。 仅在处理室的内壁附近形成等离子体的扩散被抑制以减少损耗的区域。

公开(公告)号：US4776918A

公开(公告)日：1988-10-11

申请号：US110368

申请日：1987-10-20

申请人： Toru Otsubo ,  Yasuhiro Yamaguchi ,  Takahiko Takeuchi, deceased

发明人： Toru Otsubo ,  Yasuhiro Yamaguchi ,  Takahiko Takeuchi, deceased

IPC分类号： C23C16/517 ,  H01J37/32 ,  B44C1/22 ,  B05D3/06 ,  C03C15/00 ,  C23C14/00

CPC分类号： H01J37/32238 ,  C23C16/517 ,  H01J37/32192 ,  H01J37/32247

摘要： Microwaves supplied from a magnetron through a waveguide are resonated in a cavity resonator to increase their amplitude. The resonated microwaves are emitted into a plasma production chamber through slits and a wall. Then plasma is produced in the plasma production chamber into which plasma processing gas is introduced. The plasma is employed for uniformly processing a substrate.

摘要翻译： 通过波导从磁控管提供的微波在空腔谐振器中共振以增加它们的振幅。 共振的微波通过狭缝和墙壁被排放到等离子体生产室中。 然后在等离子体生产室中产生等离子体，其中引入等离子体处理气体。 等离子体用于均匀地处理基板。

公开(公告)号：US5275977A

公开(公告)日：1994-01-04

申请号：US669526

申请日：1991-03-14

申请人： Toru Otsubo ,  Yasuhiro Yamaguchi

发明人： Toru Otsubo ,  Yasuhiro Yamaguchi

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/463

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/76801 ,  H01L21/76819

摘要： Disclosed herein are an insulating film forming method for semiconductor device interconnection and a plasma treatment system for use in the method. The method comprises (i) a step of forming an insulating film free of void, on a substrate having an interconnection pattern, in which a mixed gas of a film forming source gas and an etching gas comprising a fluorine compound is used to perform both deposition of an insulating film by plasma CVD and reactive etching of the insulating film, simultaneously, and (ii) a step of planarizing the surface of the insulating film formed by the step (i) and comprised of, for example, silicon oxide, in which a gas of a material decomposable by a reactive gas capable of decomposing the insulating film is supplied onto the substrate so as to deposit a solid film of the material, e.g. Si(OCH.sub.3).sub.4, on the insulating film on the substrate, the temperature of the substrate is then raised to liquefy the deposited material film, thereby planarizing the surface of the material film, the substrate temperature is again lowered to solidify the planarized liquid material film, and thereafter the insulating film together with the Si(OCH.sub.3).sub. 4 solid film is subjected to plasma etching with, for instance, CF.sub.4 gas as an etching gas. According to the invention, an insulating film which is planar and free of voids can be formed on an interconnection pattern of a substrate, without affecting the characteristics of devices provided on the substrate.

摘要翻译： 这里公开了用于半导体器件互连的绝缘膜形成方法和用于该方法的等离子体处理系统。 该方法包括（i）在具有互连图案的基板上形成无空隙的绝缘膜的步骤，其中使用成膜源气体和包含氟化合物的蚀刻气体的混合气体进行沉积 通过等离子体CVD和绝缘膜的反应性蚀刻同时进行绝缘膜的平坦化，以及（ii）使由步骤（i）形成的由例如氧化硅构成的绝缘膜的表面平坦化的步骤，其中， 可以通过能够分解绝缘膜的反应性气体分解的材料的气体被供给到基板上，以沉积材料的固体膜，例如 Si（OCH 3）4在衬底上的绝缘膜上，然后升高衬底的温度以使沉积的材料膜液化，从而使材料膜的表面平坦化，再次降低衬底温度以固化平坦化液体材料 膜，然后将绝缘膜与Si（OCH 3）4固体膜一起用例如作为蚀刻气体的CF 4气体进行等离子体蚀刻。 根据本发明，可以在衬底的互连图案上形成平坦且无空隙的绝缘膜，而不影响设置在衬底上的器件的特性。

公开(公告)号：US20060144518A1

公开(公告)日：2006-07-06

申请号：US11366621

申请日：2006-03-03

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover is disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

摘要翻译： 等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。 在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。 还提供减压元件。 此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。 电极盖设置在另一个电极处，电极间的间隙为30mm至100mm。 电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

公开(公告)号：US06245190B1

公开(公告)日：2001-06-12

申请号：US09048075

申请日：1998-03-26

申请人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

发明人： Toshio Masuda ,  Katsuhiko Mitani ,  Tetsunori Kaji ,  Jun'ichi Tanaka ,  Katsuya Watanabe ,  Shigeru Shirayone ,  Toru Otsubo ,  Ichiro Sasaki ,  Hideshi Fukumoto ,  Makoto Koizumi

IPC分类号： H05H146

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32678

摘要： A plasma processing apparatus and a method therefor which can achieve a preferred process rate, a fine pattern process capability, a selectivity and uniformity of processing at the same time compatibly for a large size wafer, which effects are achieved by controlling the plasma state and the dissociation state of etching gas through control of the electron resonance through application of a magnetic field thereto. A high frequency power at 20-300 MHz is applied across a pair of electrodes in a vacuum process chamber, and a magnetic field is formed parallel to the plane of the electrodes in the space between the electrodes. By controlling the intensity of the magnetic field in a range of 100 gauss or smaller, formation of electron cyclotron resonance and electron sheath resonance occurring from interaction between the electrical field and the magnetic field in the electrode sheath portion is controlled. Thereby, the plasma state, i.e., the electron density, electron energy distribution and dissociation state of the process gas in the plasma, can be controlled. The magnetic field is generated by a plurality of coils, an outer shield, and pendant yoke to form magnetic field parallel to the plane of the electrodes in the space between the upper and the bottom electrodes.

摘要翻译： 一种等离子体处理装置及其方法，其能够通过控制等离子体状态和等离子体状态来实现对于大尺寸晶片同时实现优选的处理速率，精细图案处理能力，同时处理的选择性和均匀性， 通过对其施加磁场来控制电子共振来蚀刻气体的解离状态。 在真空处理室中的一对电极上施加20-300MHz的高频功率，并且在电极之间的空间中形成平行于电极平面的磁场。 通过控制100高斯或更小范围内的磁场的强度，控制由电场鞘部分中的电场和磁场之间的相互作用产生的电子回旋共振和电子鞘共振的形成。 由此，可以控制等离子体状态，即等离子体中的处理气体的电子密度，电子能量分布和解离状态。 磁场由多个线圈，外屏蔽和悬挂磁轭产生，以在上电极和下电极之间的空间中形成平行于电极平面的磁场。

公开(公告)号：US06902683B1

公开(公告)日：2005-06-07

申请号：US09565536

申请日：2000-05-05

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A method of plasma-processing is provided which includes placing a sample on one of electrodes provided in a vacuum processing chamber and holding the sample onto the electrodes by an electrostatic attracting force. A processing gas is introduced into an environment in which said sample is placed, and the environment is evacuated to a pressure condition for processing said sample. The processing gas is then formed into a plasma under the pressure condition, the sample is processed by the plasma, and a pulse bias voltage having a pulse cycle of 0.1 μm to 10 μm is applied to the sample.

摘要翻译： 提供了一种等离子体处理方法，其包括将样品放置在设置在真空处理室中的电极中的一个上，并通过静电吸引力将样品保持在电极上。 将处理气体引入到其中放置所述样品的环境中，并且将环境抽真空至用于处理所述样品的压力条件。 然后将处理气体在压力条件下形成等离子体，样品由等离子体处理，并且将具有0.1mum至10um的脉冲周期的脉冲偏置电压施加到样品。