-
公开(公告)号：US09391272B2
公开(公告)日：2016-07-12
申请号：US14458785
申请日：2014-08-13
CPC分类号： H01L45/14 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1253 , H01L45/1266 , H01L45/148 , H01L45/1616
摘要： According to one embodiment, a nonvolatile variable resistance element includes a first electrode, a second electrode, a variable resistance layer, and a dielectric layer. The second electrode includes a metal element. The variable resistance layer is arranged between the first electrode and the second electrode. A resistance change is reversibly possible in the variable resistance layer according to move the metal element in and out. The dielectric layer is inserted between the second electrode and the variable resistance layer and has a diffusion coefficient of the metal element smaller than that of the variable resistance layer.
摘要翻译： 根据一个实施例，非易失性可变电阻元件包括第一电极，第二电极，可变电阻层和电介质层。 第二电极包括金属元件。 可变电阻层设置在第一电极和第二电极之间。 根据使金属元件进出的可变电阻层，电阻变化是可逆的。 电介质层插入在第二电极和可变电阻层之间，并且金属元素的扩散系数小于可变电阻层的扩散系数。
-
公开(公告)号：US20140353572A1
公开(公告)日：2014-12-04
申请号：US14460148
申请日：2014-08-14
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/1641
摘要： A resistance random access memory device according to an embodiment includes a first electrode, a second electrode and a variable resistance film provided between the first electrode and the second electrode. The second electrode includes material selected from the group consisting of silver, copper, zinc, gold, titanium, nickel, cobalt, tantalum, aluminum, and bismuth, alloys thereof, and silicides thereof. The variable resistance film includes silicon oxynitride. The variable resistance film includes a first resistance change layer having a first nitrogen concentration and a second resistance change layer having a second nitrogen concentration lower than the first nitrogen concentration.
摘要翻译： 根据实施例的电阻随机存取存储器件包括设置在第一电极和第二电极之间的第一电极，第二电极和可变电阻膜。 第二电极包括选自银，铜，锌，金，钛，镍，钴，钽，铝和铋的材料，其合金及其硅化物。 可变电阻膜包括氮氧化硅。 可变电阻膜包括具有第一氮浓度的第一电阻变化层和具有低于第一氮浓度的第二氮浓度的第二电阻变化层。
-
公开(公告)号：US20160043311A1
公开(公告)日：2016-02-11
申请号：US14921848
申请日：2015-10-23
发明人： Masumi SAITOH , Takayuki Ishikawa , Shosuke Fujii , Hidenori Miyagawa , Chika Tanaka , Ichiro Mizushima
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/148 , H01L45/1616 , H01L45/1641
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode and a variable resistance layer. The second electrode includes a metal. The metal is more easily ionizable than a material of the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The variable resistance layer includes a first layer and a second layer. The first layer has a relatively high crystallization rate. The second layer contacts the first layer. The second layer has a relatively low crystallization rate. The first layer and the second layer are stacked along a direction connecting the first electrode and the second electrode.
-
公开(公告)号：US09202845B2
公开(公告)日：2015-12-01
申请号：US14446419
申请日：2014-07-30
发明人： Masumi Saitoh , Takayuki Ishikawa , Shosuke Fujii , Hidenori Miyagawa , Chika Tanaka , Ichiro Mizushima
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/148 , H01L45/1616 , H01L45/1641
摘要： A memory device includes a first electrode, a second electrode and a variable resistance layer. The second electrode includes a metal. The metal is more easily ionizable than a material of the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The variable resistance layer includes a first layer and a second layer. The first layer has a relatively high crystallization rate. The second layer contacts the first layer. The second layer has a relatively low crystallization rate. The first layer and the second layer are stacked along a direction connecting the first electrode and the second electrode.
摘要翻译： 存储器件包括第一电极，第二电极和可变电阻层。 第二电极包括金属。 金属比第一电极的材料更容易电离。 可变电阻层设置在第一电极和第二电极之间。 可变电阻层包括第一层和第二层。 第一层具有较高的结晶速率。 第二层接触第一层。 第二层具有相对低的结晶速率。 第一层和第二层沿着连接第一电极和第二电极的方向堆叠。
-
公开(公告)号：US09147469B2
公开(公告)日：2015-09-29
申请号：US14602851
申请日：2015-01-22
IPC分类号： G11C13/00
CPC分类号： G11C13/0097 , G11C13/0002 , G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/0088 , G11C2213/33 , G11C2213/77
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control circuit. The memory cell array include the memory cells each including a variable resistance element in which a reset current flowing in a reset operation is smaller than a set current flowing in a set operation by not less than one order of magnitude. The control circuit performs the reset operation and the set operation for the memory cells. The control circuit performs the reset operation for all memory cells being in the low resistance state and connected to selected first interconnections and selected second interconnections.
-
6.发明授权Nonvolatile semiconductor memory device including variable resistance element 有权包括可变电阻元件的非易失性半导体存储器件公开(公告)号：US08854874B2
公开(公告)日：2014-10-07
申请号：US13966985
申请日：2013-08-14
IPC分类号： G11C13/00
CPC分类号： G11C13/0097 , G11C13/0002 , G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C2013/0073 , G11C2013/0088 , G11C2213/33 , G11C2213/77
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control circuit. The memory cell array include the memory cells each including a variable resistance element in which a reset current flowing in a reset operation is smaller than a set current flowing in a set operation by not less than one order of magnitude. The control circuit performs the reset operation and the set operation for the memory cells. The control circuit performs the reset operation for all memory cells being in the low resistance state and connected to selected first interconnections and selected second interconnections.
摘要翻译： 根据一个实施例，非易失性半导体存储器件包括存储单元阵列和控制电路。 存储单元阵列包括各自包括可变电阻元件的存储单元，其中在复位操作中流动的复位电流小于在设定操作中流动的设定电流不小于一个数量级。 控制电路对存储单元执行复位操作和设置操作。 控制电路对处于低电阻状态的所有存储单元执行复位操作，并连接到所选择的第一互连和所选择的第二互连。
-
公开(公告)号：US08835896B2
公开(公告)日：2014-09-16
申请号：US13970169
申请日：2013-08-19
IPC分类号： H01L47/00
CPC分类号： H01L45/14 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/085 , H01L45/1253 , H01L45/1266 , H01L45/148 , H01L45/1616
摘要： According to one embodiment, a nonvolatile variable resistance element includes a first electrode, a second electrode, a variable resistance layer, and a dielectric layer. The second electrode includes a metal element. The variable resistance layer is arranged between the first electrode and the second electrode. A resistance change is reversibly possible in the variable resistance layer according to move the metal element in and out. The dielectric layer is inserted between the second electrode and the variable resistance layer and has a diffusion coefficient of the metal element smaller than that of the variable resistance layer.
摘要翻译： 根据一个实施例，非易失性可变电阻元件包括第一电极，第二电极，可变电阻层和电介质层。 第二电极包括金属元件。 可变电阻层设置在第一电极和第二电极之间。 根据使金属元件进出的可变电阻层，电阻变化是可逆的。 电介质层插入在第二电极和可变电阻层之间，并且金属元素的扩散系数小于可变电阻层的扩散系数。
-
公开(公告)号：US09412937B2
公开(公告)日：2016-08-09
申请号：US14921848
申请日：2015-10-23
发明人： Masumi Saitoh , Takayuki Ishikawa , Shosuke Fujii , Hidenori Miyagawa , Chika Tanaka , Ichiro Mizushima
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/148 , H01L45/1616 , H01L45/1641
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode and a variable resistance layer. The second electrode includes a metal. The metal is more easily ionizable than a material of the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The variable resistance layer includes a first layer and a second layer. The first layer has a relatively high crystallization rate. The second layer contacts the first layer. The second layer has a relatively low crystallization rate. The first layer and the second layer are stacked along a direction connecting the first electrode and the second electrode.
摘要翻译： 根据一个实施例，存储器件包括第一电极，第二电极和可变电阻层。 第二电极包括金属。 金属比第一电极的材料更容易电离。 可变电阻层设置在第一电极和第二电极之间。 可变电阻层包括第一层和第二层。 第一层具有较高的结晶速率。 第二层接触第一层。 第二层具有相对低的结晶速率。 第一层和第二层沿着连接第一电极和第二电极的方向堆叠。
-
公开(公告)号：US09190615B2
公开(公告)日：2015-11-17
申请号：US14460148
申请日：2014-08-14
CPC分类号： H01L45/145 , H01L27/2463 , H01L27/2481 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/1641
摘要： A resistance random access memory device according to an embodiment includes a first electrode, a second electrode and a variable resistance film provided between the first electrode and the second electrode. The second electrode includes material selected from the group consisting of silver, copper, zinc, gold, titanium, nickel, cobalt, tantalum, aluminum, and bismuth, alloys thereof, and silicides thereof. The variable resistance film includes silicon oxynitride. The variable resistance film includes a first resistance change layer having a first nitrogen concentration and a second resistance change layer having a second nitrogen concentration lower than the first nitrogen concentration.
摘要翻译： 根据实施例的电阻随机存取存储器件包括设置在第一电极和第二电极之间的第一电极，第二电极和可变电阻膜。 第二电极包括选自银，铜，锌，金，钛，镍，钴，钽，铝和铋的材料，其合金及其硅化物。 可变电阻膜包括氮氧化硅。 可变电阻膜包括具有第一氮浓度的第一电阻变化层和具有低于第一氮浓度的第二氮浓度的第二电阻变化层。
-
公开(公告)号：US09040953B2
公开(公告)日：2015-05-26
申请号：US14194787
申请日：2014-03-02
CPC分类号： H01L45/085 , H01L27/2481 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/16 , H01L45/1608 , H01L45/1675
摘要： According to one embodiment, a storage device includes first electrodes, second electrodes, a resistance change layer provided between the first electrodes and the second electrodes, and ion metal particles that are formed in an island form between the first electrodes and the resistance change layer and that contain a metal movable inside the resistance change layer. The first electrodes and the second electrodes are formed of a material which is more unlikely to be ionized as compared to the metal, and the first electrodes are in contact with the resistance change layer in an area around the ion metal particles.
摘要翻译： 根据一个实施例，存储装置包括第一电极，第二电极，设置在第一电极和第二电极之间的电阻变化层和在第一电极和电阻变化层之间形成为岛状的离子金属颗粒，以及 其包含可在电阻变化层内移动的金属。 第一电极和第二电极由与金属相比更不可能离子化的材料形成，并且第一电极在离子金属颗粒周围的区域中与电阻变化层接触。
-
-
-
-
-
-
-
-
-
搜索结果
21 条记录 (耗时 0.019 秒)
