中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.013 seconds)

    PATTERN FORMING METHOD
    1.
    发明申请
    PATTERN FORMING METHOD 审中-公开
    图案形成方法

    公开(公告)号：US20140057443A1

    公开(公告)日：2014-02-27

    申请号：US13775763

    申请日：2013-02-25

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Hitoshi KUBOTA ,  Katsutoshi Kobayashi ,  Yusuke Sekiguchi

    IPC: H01L21/308

    CPC classification number: H01L21/308 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/31144

    Abstract: According to one embodiment, a pattern forming method includes forming a physical guide including a first predetermined pattern in a first region on a to-be-processed film, and a second predetermined pattern in a second region on the to-be-processed film, forming a block copolymer in the physical guide, forming a self-assembled phase including a first polymer portion and a second polymer portion by causing microphase separation of the block copolymer, removing the second polymer portion, and processing the to-be-processed film, with the physical guide and the first polymer portion serving as a mask. A pattern height of the first predetermined pattern is greater than a pattern height of the second predetermined pattern.

    Abstract translation: 根据一个实施例，图案形成方法包括在被处理膜的第一区域中形成包括第一预定图案的物理引导件，以及在待处理膜片上的第二区域中形成第二预定图案， 在所述物理引导件中形成嵌段共聚物，通过使所述嵌段共聚物进行微相分离，除去所述第二聚合物部分，以及处理所述被处理膜，形成包含第一聚合物部分和第二聚合物部分的自组装相， 其中物理引导件和第一聚合物部分用作掩模。 第一预定图案的图案高度大于第二预定图案的图案高度。

    MAGNETIC MEMORY
    3.
    发明申请
    MAGNETIC MEMORY 审中-公开
    磁记忆

    公开(公告)号：US20160118098A1

    公开(公告)日：2016-04-28

    申请号：US14947643

    申请日：2015-11-20

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Naoharu SHIMOMURA ,  Eiji KITAGAWA ,  Minoru AMANO ,  Daisuke SAIDA ,  Kay YAKUSHIJI ,  Takayuki NOZAKI ,  Shinji YUASA ,  Akio FUKUSHIMA ,  Hiroshi IMAMURA ,  Hitoshi KUBOTA

    IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02

    CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

    Abstract translation: 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

    MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
    磁电效应元件及其制造方法

    公开(公告)号：US20140077319A1

    公开(公告)日：2014-03-20

    申请号：US13802693

    申请日：2013-03-13

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Kenji NOMA ,  Hitoshi KUBOTA ,  Kay YAKUSHIJI

    IPC: H01L43/02 ,  H01L43/12

    CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

    Abstract: According to one embodiment, a magnetoresistive effect element includes a multilayer film including a transition metal nitride film, an antiferromagnetic film, a first ferromagnetic film, a nonmagnetic film, and a perpendicular magnetic anisotropic film stacked in that order. The first ferromagnetic film has a negative perpendicular magnetic anisotropic constant. Magnetization of the first ferromagnetic film is caused to point in a direction perpendicular to the film surface forcibly by an exchange-coupling magnetic field generated by the antiferromagnetic film.

    Abstract translation: 根据一个实施例，磁阻效应元件包括多层膜，其包括依次层叠的过渡金属氮化物膜，反铁磁膜，第一铁磁膜，非磁性膜和垂直磁性各向异性膜。 第一铁磁膜具有负垂直磁各向异性常数。 通过由反铁磁膜产生的交换耦合磁场强制地使第一铁磁膜的磁化指向与膜表面垂直的方向。

    MAGNETIC MEMORY
    5.
    发明申请
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：US20140269038A1

    公开(公告)日：2014-09-18

    申请号：US14198982

    申请日：2014-03-06

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Naoharu SHIMOMURA ,  Eiji KITAGAWA ,  Minoru AMANO ,  Daisuke SAIDA ,  Kay YAKUSHIJI ,  Takayuki NOZAKI ,  Shinji YUASA ,  Akio FUKUSHIMA ,  Hiroshi IMAMURA ,  Hitoshi KUBOTA

    IPC: G11C11/16 ,  H01L43/02

    CPC classification number: G11C11/161 ,  G11C11/155 ,  G11C11/165 ,  G11C11/1673 ,  G11C11/1675 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/228 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

    Abstract: A magnetic memory according to an embodiment includes at least one MTJ element, the MTJ element including: a magnetic multilayer structure including a first magnetic layer in which a direction of magnetization is fixed, a second magnetic layer in which a direction of magnetization is changeable, and a tunnel barrier layer located between the first and second magnetic layers; a first electrode provided on a first surface of the magnetic multilayer structure; a second electrode provided on a second surface of the magnetic multilayer structure; an insulating film provided on a side surface of the magnetic multilayer structure; and a control electrode provided on the side surface of the magnetic multilayer structure with the insulating film located therebetween, a voltage being applied to the control electrode in a read operation, which increases an energy barrier for changing the magnetization of the second magnetic layer.

    Abstract translation: 根据实施例的磁存储器包括至少一个MTJ元件，MTJ元件包括：磁性多层结构，其包括其中固定有磁化方向的第一磁性层，磁化方向可变的第二磁性层， 以及位于所述第一和第二磁性层之间的隧道势垒层; 设置在所述磁性多层结构的第一表面上的第一电极; 设置在所述磁性多层结构的第二表面上的第二电极; 设置在所述磁性多层结构的侧面的绝缘膜; 以及设置在所述磁性多层结构的侧表面上的绝缘膜位于它们之间的控制电极，在读取操作中将电压施加到所述控制电极，这增加了用于改变所述第二磁性层的磁化的能量势垒。

    PATTERN FORMING METHOD
    6.
    发明申请
    PATTERN FORMING METHOD 有权
    图案形成方法

    公开(公告)号：US20160060410A1

    公开(公告)日：2016-03-03

    申请号：US14636034

    申请日：2015-03-02

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Katsutoshi KOBAYASHI ,  Yusuke KASAHARA ,  Hiroki YONEMITSU ,  Hitoshi KUBOTA ,  Ayako KAWANISHI

    IPC: C08J7/00 ,  C23F1/00

    CPC classification number: C23F1/00 ,  B81C1/00396 ,  C23F4/00 ,  G03F7/0002

    Abstract: A pattern is formed by forming a first pattern on a first film, forming a block copolymer layer including a first block chain and a second block chain on the first pattern, forming a second pattern, forming a second film on the second pattern, selectively removing the second film until the second pattern is exposed, forming a third pattern, and processing the first film using the third pattern as a mask. The second pattern is formed by microphase-separating the block copolymer layer, and removing the first block chain or the second block chain. The second film is formed by applying a material having an etch rate that is less than an etch rate of a material of the first pattern and the second pattern. The third pattern is formed by selectively removing the second pattern and the first pattern using the second film as a mask.

    Abstract translation: 通过在第一膜上形成第一图案形成图案，在第一图案上形成包含第一嵌段链和第二嵌段链的嵌段共聚物层，形成第二图案，在第二图案上形成第二膜，选择性地除去 直到第二图案曝光的第二膜，形成第三图案，并且使用第三图案作为掩模来处理第一膜。 第二图案通过微相分离嵌段共聚物层并除去第一嵌段链或第二嵌段链形成。 通过施加具有小于第一图案和第二图案的材料的蚀刻速率的蚀刻速率的材料来形成第二膜。 通过使用第二膜作为掩模选择性地去除第二图案和第一图案来形成第三图案。

Patent Agency Ranking