公开(公告)号：US20150069546A1

公开(公告)日：2015-03-12

申请号：US14177963

申请日：2014-02-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shinya KOBAYASHI ,  Kenji NOMA ,  Hisato OYAMATSU

IPC: H01L43/02 ,  H01L27/22

CPC classification number: H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a semiconductor substrate, a memory cell array area on the semiconductor substrate, the memory cell array area including magnetoresistive elements, each of the magnetoresistive elements having a reference layer with an invariable magnetization, a storage layer with a variable magnetization, and a tunnel barrier layer therebetween, a magnetic field generating area which generates a first magnetic field cancelling a second magnetic field applying from the reference layer to the storage layer, and which is separated from the magnetoresistive elements, and a closed magnetic path area functioning as a closed magnetic path of the first magnetic field, and surrounding the memory cell array area and the magnetic field generating area.

Abstract translation: 根据一个实施例，磁存储器件包括半导体衬底，半导体衬底上的存储单元阵列区域，存储单元阵列区域包括磁阻元件，每个磁阻元件具有不变磁化的参考层，存储层 具有可变磁化强度和在其间的隧道势垒层的磁场产生区域，其产生消除从参考层施加到存储层并且与磁阻元件分离的第二磁场的第一磁场，以及封闭的 磁路区域用作第一磁场的闭合磁路，并且围绕存储单元阵列区域和磁场产生区域。

公开(公告)号：US20140077319A1

公开(公告)日：2014-03-20

申请号：US13802693

申请日：2013-03-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kenji NOMA ,  Hitoshi KUBOTA ,  Kay YAKUSHIJI

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetoresistive effect element includes a multilayer film including a transition metal nitride film, an antiferromagnetic film, a first ferromagnetic film, a nonmagnetic film, and a perpendicular magnetic anisotropic film stacked in that order. The first ferromagnetic film has a negative perpendicular magnetic anisotropic constant. Magnetization of the first ferromagnetic film is caused to point in a direction perpendicular to the film surface forcibly by an exchange-coupling magnetic field generated by the antiferromagnetic film.

Abstract translation: 根据一个实施例，磁阻效应元件包括多层膜，其包括依次层叠的过渡金属氮化物膜，反铁磁膜，第一铁磁膜，非磁性膜和垂直磁性各向异性膜。 第一铁磁膜具有负垂直磁各向异性常数。 通过由反铁磁膜产生的交换耦合磁场强制地使第一铁磁膜的磁化指向与膜表面垂直的方向。

公开(公告)号：US20170263679A1

公开(公告)日：2017-09-14

申请号：US15268535

申请日：2016-09-16

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein saturation magnetization of part of the first magnetic layer which is located close to the first main surface is higher than saturation magnetization of part of the first magnetic layer which is located close to the second main surface.

公开(公告)号：US20170062705A1

公开(公告)日：2017-03-02

申请号：US15065819

申请日：2016-03-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Koji YAMAKAWA ,  Katsuaki NATORI ,  Shinichi KANOO ,  Kenji NOMA

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes: a first magnetic layer; a nonmagnetic layer on the first magnetic layer; a second magnetic layer on the nonmagnetic layer; and an insulator film on the nonmagnetic layer surrounding a side surface of the second magnetic layer. The second magnetic layer has an area of a surface facing the nonmagnetic layer smaller than that of the nonmagnetic layer. The nonmagnetic layer includes a first region that is provided between the first magnetic layer and the insulator film. The first region includes an amorphous state.

Abstract translation: 根据一个实施例，磁存储器件包括：第一磁性层; 第一磁性层上的非磁性层; 非磁性层上的第二磁性层; 以及围绕第二磁性层的侧表面的非磁性层上的绝缘膜。 第二磁性层具有面向非磁性层的表面的面积小于非磁性层的面积。 非磁性层包括设置在第一磁性层和绝缘膜之间的第一区域。 第一区域包括无定形状态。

公开(公告)号：US20150228695A1

公开(公告)日：2015-08-13

申请号：US14693265

申请日：2015-04-22

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shinya KOBAYASHI ,  Kenji NOMA ,  Hisato OYAMATSU

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a semiconductor substrate, a memory cell array area on the semiconductor substrate, the memory cell array area including magnetoresistive elements, each of the magnetoresistive elements having a reference layer with an invariable magnetization, a storage layer with a variable magnetization, and a tunnel barrier layer therebetween, a magnetic field generating area which generates a first magnetic field cancelling a second magnetic field applying from the reference layer to the storage layer, and which is separated from the magnetoresistive elements, and a closed magnetic path area functioning as a closed magnetic path of the first magnetic field, and surrounding the memory cell array area and the magnetic field generating area.

公开(公告)号：US20150069545A1

公开(公告)日：2015-03-12

申请号：US14166703

申请日：2014-01-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kenji NOMA

IPC: H01L23/552 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L23/552 ,  H01L24/73 ,  H01L24/97 ,  H01L43/02 ,  H01L43/12 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/15153 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/16195 ,  H01L2924/16251 ,  H01L2924/167 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00

Abstract: According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer separated from the MRAM chip, surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.

Abstract translation: 根据一个实施例，半导体器件包括包括半导体衬底的MRAM芯片，并且存储单元阵列区域包括设置在半导体衬底上的磁阻元件和与MRAM芯片分离的磁屏蔽层，围绕存储器单元阵列区域 在MRAM芯片的圆周方向上，并且具有封闭的磁路。

公开(公告)号：US20160276578A1

公开(公告)日：2016-09-22

申请号：US14730882

申请日：2015-06-04

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yosuke KOBAYASHI ,  Kenji NOMA ,  Takeshi FUJIMORI

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: According to one embodiment, a device including a magnetoresistive element is disclosed. The device includes a substrate, a second layer provided on the substrate and including a magnetic material, and a third layer provided on a top or bottom of the second layer and including a material having a negative coefficient of thermal expansion.

Abstract translation: 根据一个实施例，公开了一种包括磁阻元件的装置。 该器件包括衬底，设置在衬底上并包括磁性材料的第二层以及设置在第二层的顶部或底部上并包括具有负的热膨胀系数的材料的第三层。

公开(公告)号：US20150263274A1

公开(公告)日：2015-09-17

申请号：US14481427

申请日：2014-09-09

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Mikio MIYATA ,  Kenji NOMA ,  Shinya KOBAYASHI ,  Yosuke KOBAYASHI ,  Masashi KAWAMURA ,  Nobuyuki OGATA

IPC: H01L43/12 ,  H01F7/02 ,  H01F7/20

CPC classification number: H01L43/12 ,  H01F7/0273 ,  H01F7/20

Abstract: According to one embodiment, a magnetic field applying apparatus includes a stage on which a semiconductor wafer having a major surface provided with a magnetoresistive effect element is placed, and an external magnetic field supplying unit configured to supply an external magnetic field to the semiconductor wafer planed on the stage. The external magnetic field supplying unit is provided on a reverse surface side or a lateral surface side of the semiconductor wafer placed on the stage.

Abstract translation: 根据一个实施例，一种磁场施加装置包括其上放置具有设置有磁阻效应元件的主表面的半导体晶片的阶段，以及外部磁场提供单元，被配置为向规划的半导体晶片提供外部磁场 在舞台上。 外部磁场供给单元设置在放置在台架上的半导体晶片的背面侧或侧面侧。

公开(公告)号：US20150008548A1

公开(公告)日：2015-01-08

申请号：US14020562

申请日：2013-09-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kenji NOMA

IPC: H01L43/02

CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory device includes a semiconductor substrate, a magnetoresistive element provided on the semiconductor substrate and includes a storage layer, a tunnel barrier layer, and a reference layer which are stacked, the reference layer having a magnetization direction perpendicular to a principal surface of the semiconductor substrate, and a magnetic field generation section provided away from the magnetoresistive element and configured to generate a magnetic field perpendicular to the principal surface of the semiconductor substrate to reduce a magnetic field from the reference layer which is applied to the storage layer.

Abstract translation: 根据一个实施例，磁存储器件包括半导体衬底，设置在半导体衬底上的磁阻元件，包括堆叠的存储层，隧道势垒层和参考层，参考层的磁化方向垂直于 半导体衬底的主表面和远离磁阻元件设置的磁场产生部，其被配置为产生垂直于半导体衬底的主表面的磁场，以减少来自施加到该半导体衬底的参考层的磁场 存储层。

公开(公告)号：US20140203385A1

公开(公告)日：2014-07-24

申请号：US14019894

申请日：2013-09-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Shinya KOBAYASHI ,  Kenji NOMA

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory comprises an electrode, a memory layer which is formed on the electrode and has magnetic anisotropy perpendicular to a film plane, and in which a magnetization direction is variable, a tunnel barrier layer formed on the memory layer, and a reference layer which is formed on the tunnel barrier layer and has magnetic anisotropy perpendicular to the film plane, and in which a magnetization direction is invariable. The memory layer has a positive magnetostriction constant on a side of the electrode, and a negative magnetostriction constant on a side of the tunnel barrier layer.

Abstract translation: 根据一个实施例，磁存储器包括电极，形成在电极上并具有垂直于膜平面的磁各向异性，并且其中磁化方向可变的存储层，形成在存储层上的隧道势垒层， 以及形成在隧道势垒层上并具有垂直于膜平面的磁各向异性的参考层，其中磁化方向是不变的。 存储层在电极侧具有正的磁致伸缩常数，在隧道势垒层的一侧具有负的磁致伸缩常数。