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8 条记录 (耗时 0.016 秒)

    Flow passage structure and processing apparatus
    1.
    发明授权
    Flow passage structure and processing apparatus 有权

    公开(公告)号：US10774420B2

    公开(公告)日：2020-09-15

    申请号：US15757382

    申请日：2017-06-26

    申请人： Kabushiki Kaisha Toshiba

    发明人： Takahiro Terada ,  Shiguma Kato ,  Shinya Higashi ,  Masayuki Tanaka ,  Takuya Matsuda

    IPC分类号： C23C16/455 ,  H01L21/67

    摘要： According to an embodiment, a flow passage structure includes a member. The member has a surface and is provided with a first passage, a plurality of first openings, a second passage, and a plurality of second openings. The first passage includes a plurality of first closed path portions connected to each other. The first openings is connected to the first passage and is opened in the surface. The second passage includes a plurality of second closed path portions connected to each other. The second openings is connected to the second passage and is opened in the surface. The first closed path portions pass through the second closed path portions while being isolated from the second closed path portions. The second closed path portions pass through the first closed path portions while being isolated from the first closed path portions.

    Electronic device, method for calculating in-housing airflow, and computer program product
    5.
    发明申请
    Electronic device, method for calculating in-housing airflow, and computer program product 审中-公开
    电子设备，计算室内气流的方法和计算机程序产品

    公开(公告)号：US20160187175A1

    公开(公告)日：2016-06-30

    申请号：US14757518

    申请日：2015-12-23

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Tomoyuki Suzuki ,  Tomonao Takamatsu ,  Shinya Higashi ,  Kenji Hirohata

    IPC分类号： G01F1/696 ,  G01F1/684

    摘要： According to one embodiment, an electronic device includes a housing, a first heating element, a second heating element, a first sensor, a second sensor, and a calculator. The first heating element is housed in the housing. The second heating element is housed in the housing and a temporal change in amount of heat generation of the second heating element is smaller than a temporal change of the first heating element. The first sensor is housed in the housing and detects a temperature of the second heating element. The second sensor detects an ambient temperature. The calculator calculates a flow rate of airflow in the housing based on a difference between the temperature detected by the first sensor and the temperature detected by the second sensor.

    摘要翻译： 根据一个实施例，电子设备包括壳体，第一加热元件，第二加热元件，第一传感器，第二传感器和计算器。 第一加热元件容纳在壳体中。 第二加热元件容纳在壳体中，并且第二加热元件的发热量的时间变化小于第一加热元件的时间变化。 第一传感器容纳在壳体中并且检测第二加热元件的温度。 第二个传感器检测环境温度。 计算器基于由第一传感器检测的温度与由第二传感器检测的温度之间的差异来计算壳体中的气流的流量。

    SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR MANUFACTURING METHOD, AND PROCESS TUBE
    6.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS, SEMICONDUCTOR MANUFACTURING METHOD, AND PROCESS TUBE 审中-公开
    半导体制造设备，半导体制造方法和工艺管

    公开(公告)号：US20150093894A1

    公开(公告)日：2015-04-02

    申请号：US14479497

    申请日：2014-09-08

    申请人： Kabushiki Kaisha Toshiba

    发明人： Kaori Deura ,  Shinya Higashi ,  Takahiro Terada ,  Tsutomu Sato ,  Kazuhiko Nakamura

    IPC分类号： H01L21/67 ,  C23C16/46 ,  C23C16/455 ,  H01L21/3213

    CPC分类号： H01L21/3213 ,  C23C16/46 ,  F27B17/0025 ,  H01L21/67115

    摘要： According to one embodiment, a semiconductor manufacturing apparatus includes a process tube, a substrate supporting unit, and a heater. A surface processing area is provided in a portion of the outer surface of the process tube facing the heater. The surface processing area is processed to reduce the heat radiation passing compared to that of other areas of the outer surface. The surface processing area is provided in a range sandwiched by a straight line connecting the upper end of the heater and the upper end of the substrate supporting unit and a straight line connecting the lower end of the heater and the lower end of the substrate supporting unit.

    摘要翻译： 根据一个实施例，半导体制造装置包括处理管，衬底支撑单元和加热器。 表面处理区域设置在处理管的面向加热器的外表面的一部分中。 与外表面的其他区域相比，处理表面处理区域以减少热辐射通过。 表面处理区域设置在由连接加热器的上端和基板支撑单元的上端的直线夹持的范围内，以及连接加热器的下端和基板支撑单元的下端的直线 。

    Film forming apparatus and film forming method
    7.
    发明授权
    Film forming apparatus and film forming method 有权

    公开(公告)号：US10316429B2

    公开(公告)日：2019-06-11

    申请号：US15696784

    申请日：2017-09-06

    申请人： Kabushiki Kaisha Toshiba ,  NuFlare Technology, Inc.

    发明人： Shinya Higashi ,  Kaori Deura ,  Kunihiko Suzuki ,  Masayoshi Yajima

    IPC分类号： C30B25/12 ,  H01L21/67 ,  H01L21/687 ,  C30B25/08 ,  C23C16/455 ,  C23C16/458 ,  C30B25/14

    摘要： According to one embodiment, a film forming apparatus includes a process chamber, a placement portion, a susceptor, a cover, a gas source, a heater, and a support portion. The placement portion is provided inside the process chamber. The susceptor is held in an end portion of the placement portion and is capable of placing a substrate. The cover is capable of being placed facing the susceptor inside the process chamber. The gas source is capable of supplying a process gas between the cover and the substrate. The heater is capable of heating the substrate. The support portion is provided inside the process chamber and is capable of supporting the cover at a first position above the susceptor and is capable of separating the cover at a second position which is different from the first position.

    SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER
    8.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR WAFER HOLDER 审中-公开
    半导体制造设备和半导体波形保持器

    公开(公告)号：US20140283748A1

    公开(公告)日：2014-09-25

    申请号：US14024357

    申请日：2013-09-11

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Shinya Higashi ,  Shinya Sato ,  Tomoyuki Sakuma ,  Akihiko Osawa ,  Hiroaki Kobayashi ,  Osamu Yamazaki ,  Hiroshi Nishimura

    IPC分类号： C30B25/12

    CPC分类号： C30B25/12 ,  C23C16/4584 ,  C23C16/4585 ,  C30B25/14 ,  C30B29/06 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68785

    摘要： A semiconductor manufacturing apparatus includes a chamber, a reaction-gas inlet, a gas exhaust port, a rotation unit, a semiconductor wafer holder, a heater, and a purge-gas inlet. The wafer holder includes a first hold region to hold the semiconductor wafer and a second hold region held by the rotation unit. The second hold region surrounds the first hold region. The level of the first hold region and the level of the second hold region differ. A plurality of ventholes is provided to the first hold region so that the ventholes are just below a sidewall of the semiconductor wafer held by the first hold region.

    摘要翻译： 半导体制造装置包括室，反应气体入口，排气口，旋转单元，半导体晶片保持器，加热器和吹扫气体入口。 晶片保持器包括用于保持半导体晶片的第一保持区域和由旋转单元保持的第二保持区域。 第二保持区域围绕第一保持区域。 第一保持区域的电平和第二保持区域的电平不同。 多个通气孔被提供到第一保持区域，使得通气孔正好位于由第一保持区域保持的半导体晶片的侧壁的下方。