公开(公告)号：US11923151B2

公开(公告)日：2024-03-05

申请号：US17148038

申请日：2021-01-13

Applicant: KEMET Electronics Corporation

Inventor： Galen W. Miller ,  John Bultitude ,  Lonnie G. Jones

IPC: H01G4/38 ,  H01G2/04 ,  H01G2/08 ,  H01G2/10 ,  H01G4/30 ,  H01G13/00 ,  H05K1/02 ,  H05K1/14 ,  H05K1/18 ,  H05K3/32 ,  H01L25/07 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01G4/38 ,  H01G2/04 ,  H01G2/08 ,  H01G2/10 ,  H01G4/30 ,  H01G13/00 ,  H05K1/0272 ,  H05K1/145 ,  H05K1/18 ,  H05K1/181 ,  H05K3/328 ,  H01L25/072 ,  H01L29/1608 ,  H01L29/2003 ,  H05K2201/10015 ,  H05K2201/10166 ,  H05K2201/10424 ,  H05K2201/10545

Abstract: Provided is an improved electronic component package. The electronic component package comprises a multiplicity of electronic components wherein each electronic component comprises a first external termination and a second external termination. The electronic component package also includes a structural lead frame comprising multiple leads wherein each lead is mounted to at least one first external termination and the structural lead frame comprises at least one break away feature between adjacent leads.

公开(公告)号：US11081882B2

公开(公告)日：2021-08-03

申请号：US16513349

申请日：2019-07-16

Applicant: KEMET Electronics Corporation

Inventor： John Bultitude ,  Lonnie G. Jones ,  Iain D. Kinnon ,  Nathan A. Reed ,  Jeffrey W. Bell

IPC: H02H9/04

Abstract: A protected electric circuit, and method of protecting a protected circuit is provided. The circuit comprises at least one sensitive device wherein the sensitive device operates at a device voltage and has a maximum voltage capability. At least one light emitting diode electrically connected with the sensitive device wherein the light emitting diode has a first trigger voltage wherein the first trigger voltage is above the device voltage and below the maximum voltage capability. When any said extraneous energy above the first trigger energy is experienced the light emitting diode emits photons thereby converting at least some of the extraneous energy to photon energy.

公开(公告)号：US09490072B2

公开(公告)日：2016-11-08

申请号：US14266364

申请日：2014-04-30

Applicant: Kemet Electronics Corporation

Inventor： John Bultitude ,  James R. Magee ,  Lonnie G. Jones

IPC: H01G4/30 ,  H01G4/005 ,  H01G4/232

CPC classification number: H01G4/30 ,  H01G4/005 ,  H01G4/232 ,  Y10T29/435

Abstract: A method for making multilayer ceramic capacitors is described with high voltage capability without the need of coating the part to resist surface arc-over. One design combines a high overlap area for higher capacitance whilst retaining a high voltage capability. A variation of this design has increased voltage capability over this design as well as another described in the prior art although overlap area and subsequently capacitance is lowered in this case.

Abstract translation: 以高电压能力描述制造多层陶瓷电容器的方法，而不需要涂覆部件来抵抗表面电弧。 一个设计结合了高重叠面积，用于更高的电容，同时保持高电压能力。 这种设计的变化在这种设计中增加了电压能力，而且在现有技术中描述了另一种，尽管在这种情况下重叠区域和随后的电容降低。

公开(公告)号：US11744018B2

公开(公告)日：2023-08-29

申请号：US17147908

申请日：2021-01-13

Applicant: KEMET Electronics Corporation

Inventor： John Bultitude ,  Peter Alexandre Blais ,  James A. Burk ,  Galen W. Miller ,  Hunter Hayes ,  Allen Templeton ,  Lonnie G. Jones ,  Mark R. Laps

IPC: H05K1/18 ,  H01G4/38 ,  H05K1/14 ,  H05K1/02 ,  H05K3/32 ,  H01L29/20 ,  H01G4/30 ,  H01L25/07 ,  H01L29/16

CPC classification number: H05K1/181 ,  H01G4/38 ,  H05K1/0272 ,  H05K1/145 ,  H05K3/328 ,  H01G4/30 ,  H01L25/072 ,  H01L29/1608 ,  H01L29/2003 ,  H05K2201/10015 ,  H05K2201/10166 ,  H05K2201/10545

Abstract: Provided is a high-density multi-component package comprising a first module interconnect pad and a second module interconnect pad. At least two electronic components are mounted to and between the first module interconnect pad and the second module interconnect pad wherein a first electronic component is vertically oriented relative to the first module interconnect pad. A second electronic component is vertically oriented relative to the second module interconnect pad.

公开(公告)号：US20210227693A1

公开(公告)日：2021-07-22

申请号：US17147908

申请日：2021-01-13

Applicant: KEMET Electronics Corporation

Inventor： John Bultitude ,  Peter Alexandre Blais ,  James A. Burk ,  Galen W. Miller ,  Hunter Hayes ,  Allen Templeton ,  Lonnie G. Jones ,  Mark R. Laps

IPC: H05K1/18 ,  H01G4/38 ,  H05K1/14 ,  H05K1/02 ,  H05K3/32

Abstract: Provided is a high-density multi-component package comprising a first module interconnect pad and a second module interconnect pad. At least two electronic components are mounted to and between the first module interconnect pad and the second module interconnect pad wherein a first electronic component is vertically oriented relative to the first module interconnect pad. A second electronic component is vertically oriented relative to the second module interconnect pad.

公开(公告)号：US20200219657A1

公开(公告)日：2020-07-09

申请号：US16825069

申请日：2020-03-20

Applicant: KEMET Electronics Corporation

Inventor： Iain D. Kinnon ,  John Bultitude ,  Lonnie G. Jones

IPC: H01G4/40 ,  H01T4/10

Abstract: Provided is an improved overvoltage protection element. The overvoltage protection devices comprises at least one ESD protection couple comprising discharge electrodes in a plane, a gap insulator between the discharge electrodes, an overvoltage protection element parallel to the planar discharge electrodes wherein the overvoltage protection element comprises a conductor and an secondary material. The overvoltage protection element also comprises a primary insulator layer between the discharge electrodes and overvoltage protection element.

公开(公告)号：US20130250473A1

公开(公告)日：2013-09-26

申请号：US13849806

申请日：2013-03-25

Applicant: KEMET ELECTRONICS CORPORATION

Inventor： John Bultitude ,  Lonnie G. Jones ,  James R. Magee ,  Kitae Park

IPC: H01G4/30

CPC classification number: H01G4/30 ,  H01G4/012 ,  H01G4/232 ,  Y10T29/435

Abstract: An improved multi-layered ceramic capacitor, and method of making the multi-layered ceramic capacitor, is described. The capacitor has an active area comprising first layers and second layers in alternating parallel arrangement with dielectric there between. The first layer comprises a first active electrode and a first floating electrode in a common plane and the second layer comprises a second active electrode and a second floating electrode in a second common plane. At least one shield layer is adjacent to an outermost first layer of the first layers wherein the shield layer has a first projection and the first layers have a second projection wherein the first projection and the second projection are different.

Abstract translation: 描述了改进的多层陶瓷电容器以及制造多层陶瓷电容器的方法。 电容器具有包括第一层和第二层的有源区域，其间以电介质交替并行布置。 第一层包括公共平面中的第一有源电极和第一浮动电极，第二层包括第二共用平面中的第二有源电极和第二浮动电极。 至少一个屏蔽层与第一层的最外面的第一层相邻，其中屏蔽层具有第一突起，并且第一层具有第二突起，其中第一突起和第二突起不同。

公开(公告)号：US11037871B2

公开(公告)日：2021-06-15

申请号：US16553395

申请日：2019-08-28

Applicant: KEMET Electronics Corporation

Inventor： Allen Templeton ,  John Bultitude ,  Lonnie G. Jones ,  Philip M. Lessner

IPC: H01L23/498 ,  H01L23/522 ,  H01L29/778 ,  H01L23/367

Abstract: An improved electronic assembly is provided. The electronic assembly comprises a ceramic interposer comprising multiple layers. The active layers of the multiple layers form an embedded capacitor comprising parallel electrodes with a dielectric between adjacent electrodes wherein adjacent electrodes have opposite polarity. A wide band gap device is also on the multilayered ceramic interposer.

公开(公告)号：US20200273949A1

公开(公告)日：2020-08-27

申请号：US16531255

申请日：2019-08-05

Applicant: KEMET Electronics Corporation

Inventor： John Bultitude ,  Lonnie G. Jones ,  Allen Templeton ,  Philip M. Lessner

IPC: H01L49/02 ,  H01L23/48 ,  H01L23/522

Abstract: Provided herein is a module for packaging semiconductors comprising: at least one PDC comprising parallel internal electrodes of alternating polarity with a paraelectric dielectric between adjacent internal electrodes wherein the paraelectric dielectric has a permittivity above 10 to no more than 300; and wherein the PDC forms a capacitor couple with at least one semiconductor.

公开(公告)号：US10229785B2

公开(公告)日：2019-03-12

申请号：US14096605

申请日：2013-12-04

Applicant: Kemet Electronics Corporation

Inventor： John E. McConnell ,  Alan P. Webster ,  Lonnie G. Jones ,  Garry L. Renner ,  Jeffrey W. Bell

IPC: H01G4/30 ,  H01G4/38 ,  H01G13/00 ,  H01G4/232

Abstract: An improved capacitor utilizing stacked MLCC's is provided. The capacitor comprising at least one MLCC sandwiched between a first lead and a second lead. Each lead comprises at least one integral lead crimp.