公开(公告)号：US20230170032A1

公开(公告)日：2023-06-01

申请号：US18159994

申请日：2023-01-26

Applicant: Kioxia Corporation

Inventor： Katsuhiko IWAI ,  Shinji MAEDA

IPC: G11C16/34 ,  G11C16/04 ,  G11C16/08 ,  G11C16/30 ,  G11C16/28

CPC classification number: G11C16/3431 ,  G11C16/3404 ,  G11C16/0433 ,  G11C16/08 ,  G11C16/30 ,  G11C16/28

Abstract: A semiconductor device includes a transmission and reception circuit and a control circuit. The transmission and reception circuit transmits and receives a signal to and from a semiconductor memory device. The control circuit acquires threshold voltage distribution information of a memory element connected to a word line for read disturb detection to which a second voltage higher than a first voltage applied to an adjacent word line adjacent to a read target word line during a read operation is applied and determines an influence of read disturb based on the threshold voltage distribution information.

公开(公告)号：US20210303214A1

公开(公告)日：2021-09-30

申请号：US17185104

申请日：2021-02-25

Applicant: KIOXIA CORPORATION

Inventor： Takeshi NAKANO ,  Akihiko ISHIHARA ,  Shingo TANIMOTO ,  Yasuaki NAKAZATO ,  Shinji MAEDA ,  Minoru UCHIDA ,  Kenji SAKAUE ,  Koichi INOUE ,  Yosuke KINO ,  Takumi SASAKI ,  Mikio TAKASUGI ,  Kouji SAITOU ,  Hironori NAGAI ,  Shinya TAKEDA ,  Akihito TOUHATA ,  Masaru OGAWA ,  Akira AOKI

IPC: G06F3/06 ,  G06F11/10

Abstract: A memory system includes a non-volatile memory and a controller that includes a first memory and is configured to write log data to the first memory, including a history of commands for controlling the memory system. An information processing system includes the memory system and an information processing device configured to store an expected value and to transmit a signal that instructs the memory system to stop when a value of the log data transmitted from the memory system does not match the expected value. The expected value and the transmitted value are determined based on the log data of the memory system.

公开(公告)号：US20240061620A1

公开(公告)日：2024-02-22

申请号：US18501943

申请日：2023-11-03

Applicant: Kioxia Corporation

Inventor： Takeshi NAKANO ,  Akihiko ISHIHARA ,  Shingo TANIMOTO ,  Yasuaki NAKAZATO ,  Shinji MAEDA ,  Minoru UCHIDA ,  Kenji SAKAUE ,  Koichi INOUE ,  Yosuke KINO ,  Takumi SASAKI ,  Mikio TAKASUGI ,  Kouji SAITOU ,  Hironori NAGAI ,  Shinya TAKEDA ,  Akihito TOUHATA ,  Masaru OGAWA ,  Akira AOKI

IPC: G06F3/06 ,  G06F11/10

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G06F11/1068

Abstract: A memory system includes a non-volatile memory and a controller that includes a first memory and is configured to write log data to the first memory, including a history of commands for controlling the memory system. An information processing system includes the memory system and an information processing device configured to store an expected value and to transmit a signal that instructs the memory system to stop when a value of the log data transmitted from the memory system does not match the expected value. The expected value and the transmitted value are determined based on the log data of the memory system.

公开(公告)号：US20220301642A1

公开(公告)日：2022-09-22

申请号：US17409116

申请日：2021-08-23

Applicant: Kioxia Corporation

Inventor： Katsuhiko IWAI ,  Shinji MAEDA

IPC: G11C16/34 ,  G11C16/28 ,  G11C16/08 ,  G11C16/30 ,  G11C16/04

Abstract: A semiconductor device includes a transmission and reception circuit and a control circuit. The transmission and reception circuit transmits and receives a signal to and from a semiconductor memory device. The control circuit acquires threshold voltage distribution information of a memory element connected to a word line for read disturb detection to which a second voltage higher than a first voltage applied to an adjacent word line adjacent to a read target word line during a read operation is applied and determines an influence of read disturb based on the threshold voltage distribution information.