MEMORY SYSTEM
    2.
    发明申请

    公开(公告)号:US20230004506A1

    公开(公告)日:2023-01-05

    申请号:US17943798

    申请日:2022-09-13

    Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

    MEMORY SYSTEM
    3.
    发明申请

    公开(公告)号:US20250036583A1

    公开(公告)日:2025-01-30

    申请号:US18917560

    申请日:2024-10-16

    Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

    MEMORY SYSTEM
    6.
    发明申请

    公开(公告)号:US20210294504A1

    公开(公告)日:2021-09-23

    申请号:US17003840

    申请日:2020-08-26

    Abstract: According to one or more embodiments, a memory system includes a signal terminal, a power line, a resistance element, a nonvolatile semiconductor memory, and a controller. The resistance element is provided between the signal terminal and the power line. The nonvolatile semiconductor memory is configured to transmit and receive a signal to and from a host device via the signal terminal. The controller is configured to determine whether to connect the signal terminal to the power line via the resistance element.

    MEMORY SYSTEM
    7.
    发明申请

    公开(公告)号:US20210406204A1

    公开(公告)日:2021-12-30

    申请号:US17158134

    申请日:2021-01-26

    Abstract: According to one embodiment, a memory system includes a first chip and a second chip. The second chip is bonded with the first chip. The memory system includes a semiconductor memory device and a memory controller. The semiconductor memory device includes a memory cell array, a peripheral circuit, and an input/output module. The memory controller is configured to receive an instruction from an external host device and control the semiconductor memory device via the input/output module. The first chip includes the memory cell array. The second chip includes the peripheral circuit, the input/output module, and the memory controller.

    MEMORY SYSTEM AND INFORMATION PROCESSING APPARATUS

    公开(公告)号:US20210294509A1

    公开(公告)日:2021-09-23

    申请号:US17010772

    申请日:2020-09-02

    Abstract: A memory system of an embodiment includes a non-volatile memory and a controller configured to control the accessing of the non-volatile memory according to commands from a host device. The controller is configured to set a mode transition time to a value according to a first command received from the host. The controller transitions from a first operating mode to a second operating mode, in which power supply is suspended to a predetermined circuit, when the time since the last command was received from the host device reaches the mode transition time. The controller maintains the second operating mode until another command is received from the host device.

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