公开(公告)号：US20240274176A1

公开(公告)日：2024-08-15

申请号：US18439612

申请日：2024-02-12

Applicant: Kioxia Corporation

Inventor： Naoharu SHIMOMURA ,  Tsuyoshi KONDO ,  Michael ARNAUD QUINSAT ,  Yasuaki OOTERA ,  Masaki KADO ,  Yoshihiro UEDA ,  Tsutomu NAKANISHI ,  Nobuyuki UMETSU ,  Susumu HASHIMOTO ,  Shiho NAKAMURA

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80

CPC classification number: G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80

Abstract: A magnetic memory includes a plurality of cylindrical magnetic members each extending along a first direction and having a first end portion and a second end portion; and a magnetoresistive element that includes: a magnetization variable layer with a variable magnetization direction, a magnetization fixed layer with a fixed magnetization direction, and a non-magnetic layer between the magnetization variable layer and the magnetization fixed layer. When viewed in the first direction, the magnetoresistive element overlaps a part of the first end portion of one of the magnetic members. The magnetization direction of the magnetization variable layer intersects with the magnetization direction of the magnetization fixed layer at an angle larger than 0 degrees and smaller than 180 degrees.

公开(公告)号：US20240055028A1

公开(公告)日：2024-02-15

申请号：US18179280

申请日：2023-03-06

Applicant: Kioxia Corporation

Inventor： Nobuyuki UMETSU ,  Tsuyoshi KONDO ,  Naoharu SHIMOMURA ,  Shiho NAKAMURA ,  Susumu HASHIMOTO ,  Yasuaki OOTERA ,  Yoshihiro UEDA

IPC: G11C5/08 ,  H10B61/00 ,  H10N50/10 ,  G11C11/16

CPC classification number: G11C5/08 ,  H10B61/00 ,  H10N50/10 ,  G11C11/1675

Abstract: According to one embodiment, a magnetic memory includes a first magnetic member extending along a first direction. First and second wires extend along a second direction. The first magnetic member is located between the first and second wirings in plan view from the first direction. A second magnetic member has a first portion above the first and second wirings, a second portion between the first and second wirings, and a third portion below the first and second wirings. At least one of the first portion or the third portion of the second magnetic member has a lower saturation magnetization than the second portion.

公开(公告)号：US20240049475A1

公开(公告)日：2024-02-08

申请号：US18176464

申请日：2023-02-28

Applicant: Kioxia Corporation

Inventor： Yoshihiro UEDA ,  Masatoshi YOSHIKAWA

IPC: H10B61/00 ,  G11C11/16 ,  H10N50/80 ,  H10N50/10

CPC classification number: H10B61/22 ,  G11C11/1675 ,  G11C11/161 ,  G11C11/1697 ,  G11C11/1673 ,  H10N50/80 ,  H10N50/10

Abstract: A magnetic memory includes first conductive lines, a second conductive line, a third conductive line, a fourth conductive line, a conductive layer, magnetoresistive elements, first transistors, a second transistor, and a third transistor. Each magnetoresistive element is arranged between the conductive layer and the second conductive line and includes a first magnetic layer, a second magnetic layer between the first magnetic layer and the second conductive line, and a first non-magnetic layer between the first magnetic layer and the second magnetic layer. Each first transistor is connected between the conductive layer and one of the magnetoresistive elements, and has a gate which is a part of one the first conductive lines. A second transistor is connected between a first end of the second conductive line and the third conductive line. A third transistor is connected between a second end of the second conductive line and the fourth conductive line.

公开(公告)号：US20210082484A1

公开(公告)日：2021-03-18

申请号：US16914511

申请日：2020-06-29

Applicant: Kioxia Corporation

Inventor： Yoshihiro UEDA ,  Michael ARNAUD QUINSAT

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02

Abstract: A magnetic memory according to an embodiment includes: a first wiring; a second wiring; a first switching element disposed between the first wiring and the second wiring; a first magnetic member extending in a first direction and disposed between the first switching element and the second wiring; a third wiring disposed between the first magnetic member and the second wiring; a first magnetoresistive element disposed between the third wiring and the second wiring; and a second switching element disposed between the first magnetoresistive element and the second wiring.

公开(公告)号：US20220293678A1

公开(公告)日：2022-09-15

申请号：US17410806

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Yoshihiro UEDA ,  Naoharu Shimomura ,  Tsuyoshi Kondo

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetic memory includes a planar electrode and a first wiring spaced from the electrode. A first magnetic member is between the electrode and the first wiring. The first magnetic member has a first end facing the first wiring and a second end facing the electrode. A magnetoresistive element is connected to the first end. A transistor is between the magnetoresistive element and the first wiring. The transistor has a channel layer and a gate electrode covering at least part of an outer periphery of the channel layer. One end of the channel layer is connected to the magnetoresistive element, and another end of the channel layer is connected to the first wiring. A second wiring has a portion between the electrode and the second end of the first magnetic member. A control circuit is electrically connected to the gate electrode, the electrode, and the first and second wirings.

公开(公告)号：US20250022498A1

公开(公告)日：2025-01-16

申请号：US18764581

申请日：2024-07-05

Applicant: Kioxia Corporation

Inventor： Shogo MUTO ,  Masanobu SHIRAKAWA ,  Hideki YAMADA ,  Ryo YAMAKI ,  Yoshihiro UEDA ,  Tsuyoshi KONDO

IPC: G11C11/16 ,  G11C19/08 ,  H10B61/00 ,  H10N50/10

Abstract: A first circuit outputs first information indicating presence/absence of a magnetic wall between two adjacent portions among portions of a magnetic body, and second information based on the combination of magnetization states of the two portions. A first storage circuit stores first bits corresponding to the portions. A most significant bit of the first bits has a value independent of a magnetization state of a corresponding one of the portions, and the first bits have a value based on the first information. A second storage circuit stores the second information. The second circuit causes the first storage circuit to output the first bits when a value of a least significant bit of the first bits matches a value of the second information, and otherwise third bits having inverse values of the first bits.

公开(公告)号：US20230076828A1

公开(公告)日：2023-03-09

申请号：US17693818

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Naoharu SHIMOMURA ,  Nobuyuki UMETSU ,  Tsuyoshi KONDO ,  Yoshihiro UEDA ,  Yasuaki OOTERA ,  Akihito YAMAMOTO ,  Mutsumi OKAJIMA ,  Masaki KADO ,  Tsutomo NAKANISHI ,  Michael Arnaud QUINSAT

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16

Abstract: A magnetic memory of the present embodiment includes an electrode extending along a plane including a first direction and a second direction, a first wiring extending in the first direction, second wirings between the electrode and the first wiring, extending in the second direction and arranged in the first direction, first magnetic members each including a first part electrically connected to the first wiring and a second part electrically connected to the electrode, extending in a third direction, and being positioned between neighboring two of the second wirings when seen from the third direction, and a control circuit. When writing first information to one first magnetic member, the control circuit supplies first current to at least two second wirings positioned on one side of the one first magnetic member in the first direction.

公开(公告)号：US20230071519A1

公开(公告)日：2023-03-09

申请号：US17681850

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Yoshihiro UEDA ,  Naoharu SHIMOMURA ,  Tsuyoshi KONDO

IPC: H01L43/02 ,  H01L43/10

Abstract: A magnetic memory includes an electrode extending along a plane including first and second directions, first and second wirings extending along the first direction, a first magnetic member including first and second portions coupled to the first wiring and the electrode, a second magnetic member including third and fourth portions coupled to the second wiring and the electrode, the first and second members extending along the third direction, a third wiring extending along the second direction between the electrode and the second and fourth portions, and a circuit configured to supply a current to the third wiring to magnetize in a first magnetization direction a magnetic domain of each of the second and fourth portions, the magnetic domain storing information represented by magnetization directions thereof, and supply a current between the electrode and the first and second wirings to shift the magnetic domains towards the first and third portions.

公开(公告)号：US20230309321A1

公开(公告)日：2023-09-28

申请号：US17898255

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Naoharu SHIMOMURA ,  Tsuyoshi KONDO ,  Yoshihiro UEDA ,  Yasuaki OOTERA ,  Akihito YAMAMOTO ,  Mutsumi OKAJIMA ,  Masaki KADO ,  Tsutomu NAKANISHI ,  Nobuyuki UMETSU ,  Michael Arnaud QUINSAT

IPC: H01L27/22 ,  H01L43/02

CPC classification number: H01L27/228 ,  H01L43/02

Abstract: A magnetic memory includes first magnetic members extending along a first direction. First and second wirings are spaced apart from the first magnetic members on a second end side of the first magnetic members. At least one of the first magnetic members is between the first and second wirings in a plan view from the first direction. A second magnetic member has a first portion facing the first wiring and electrically connected to a first magnetic member on one side and a second portion facing the first wiring on an opposite side. The second portion is electrically connected to another first magnetic member. A control circuit causes a current to flow through one of the first wiring or the second wiring when data is written into the first magnetic member that is between the first wiring and the second wiring.

公开(公告)号：US20210280635A1

公开(公告)日：2021-09-09

申请号：US17189107

申请日：2021-03-01

Applicant: Kioxia Corporation

Inventor： Hiroki TOKUHIRA ,  Tsuyoshi KONDO ,  Mutsumi OKAJIMA ,  Yoshihiro UEDA

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.