公开(公告)号：US11871586B2

公开(公告)日：2024-01-09

申请号：US17693818

申请日：2022-03-14

Applicant: Kioxia Corporation

Inventor： Naoharu Shimomura ,  Nobuyuki Umetsu ,  Tsuyoshi Kondo ,  Yoshihiro Ueda ,  Yasuaki Ootera ,  Akihito Yamamoto ,  Mutsumi Okajima ,  Masaki Kado ,  Tsutomo Nakanishi ,  Michael Arnaud Quinsat

IPC: G11C19/08 ,  H10B61/00 ,  H10N50/80 ,  G11C11/16

CPC classification number: H10B61/22 ,  G11C11/161 ,  G11C11/1675 ,  H10N50/80 ,  G11C19/08

Abstract: A magnetic memory of the present embodiment includes an electrode extending along a plane including a first direction and a second direction, a first wiring extending in the first direction, second wirings between the electrode and the first wiring, extending in the second direction and arranged in the first direction, first magnetic members each including a first part electrically connected to the first wiring and a second part electrically connected to the electrode, extending in a third direction, and being positioned between neighboring two of the second wirings when seen from the third direction, and a control circuit. When writing first information to one first magnetic member, the control circuit supplies first current to at least two second wirings positioned on one side of the one first magnetic member in the first direction.

公开(公告)号：US12069962B2

公开(公告)日：2024-08-20

申请号：US17196737

申请日：2021-03-09

Applicant: Kioxia Corporation

Inventor： Tsuyoshi Kondo ,  Nobuyuki Umetsu ,  Yasuaki Ootera ,  Tsutomu Nakanishi ,  Shigeyuki Hirayama

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01

CPC classification number: H10N50/80 ,  H10B61/22 ,  H10N50/01

Abstract: A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a nonmagnetic conductor extending in a first direction; a first magnetic member including a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in the first direction from the first portion to the second portion to surround the nonmagnetic conductor; an insulation portion disposed between the nonmagnetic conductor and the first magnetic member; and a controller electrically connected to the nonmagnetic conductor, the first wiring, and the second wiring.

公开(公告)号：US12052875B2

公开(公告)日：2024-07-30

申请号：US17410806

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Yoshihiro Ueda ,  Naoharu Shimomura ,  Tsuyoshi Kondo

IPC: H10B61/00 ,  G11C11/16 ,  H10N50/10 ,  H10N50/80

CPC classification number: H10B61/22 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10N50/10 ,  H10N50/80

Abstract: A magnetic memory includes a planar electrode and a first wiring spaced from the electrode. A first magnetic member is between the electrode and the first wiring. The first magnetic member has a first end facing the first wiring and a second end facing the electrode. A magnetoresistive element is connected to the first end. A transistor is between the magnetoresistive element and the first wiring. The transistor has a channel layer and a gate electrode covering at least part of an outer periphery of the channel layer. One end of the channel layer is connected to the magnetoresistive element, and another end of the channel layer is connected to the first wiring. A second wiring has a portion between the electrode and the second end of the first magnetic member. A control circuit is electrically connected to the gate electrode, the electrode, and the first and second wirings.

公开(公告)号：US20220293678A1

公开(公告)日：2022-09-15

申请号：US17410806

申请日：2021-08-24

Applicant: KIOXIA CORPORATION

Inventor： Yoshihiro UEDA ,  Naoharu Shimomura ,  Tsuyoshi Kondo

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetic memory includes a planar electrode and a first wiring spaced from the electrode. A first magnetic member is between the electrode and the first wiring. The first magnetic member has a first end facing the first wiring and a second end facing the electrode. A magnetoresistive element is connected to the first end. A transistor is between the magnetoresistive element and the first wiring. The transistor has a channel layer and a gate electrode covering at least part of an outer periphery of the channel layer. One end of the channel layer is connected to the magnetoresistive element, and another end of the channel layer is connected to the first wiring. A second wiring has a portion between the electrode and the second end of the first magnetic member. A control circuit is electrically connected to the gate electrode, the electrode, and the first and second wirings.

公开(公告)号：US11711925B2

公开(公告)日：2023-07-25

申请号：US17189107

申请日：2021-03-01

Applicant: Kioxia Corporation

Inventor： Hiroki Tokuhira ,  Tsuyoshi Kondo ,  Mutsumi Okajima ,  Yoshihiro Ueda

IPC: H01L27/22 ,  H10B61/00 ,  G11C19/08 ,  H10N50/01 ,  H10N50/80

CPC classification number: H10B61/00 ,  G11C19/0808 ,  H10N50/01 ,  H10N50/80

Abstract: A magnetic memory of an embodiment includes: a first magnetic member including a first and second portions and extending in a first direction; a first and second wirings disposed to be apart from the first magnetic member and extending in a second direction intersecting the first direction, the first and the second wirings being separated from each other in a third direction intersecting the first and second directions, the first magnetic member being disposed to be apart from a region between the first wiring and the second wiring in the first direction; and a second magnetic member surrounding at least parts of the first and second wirings, the second magnetic member including a third portion located to be more distant from the first magnetic member, a fourth portion located to be closer to the first magnetic member, and a fifth portion located in the region.

公开(公告)号：US11227646B2

公开(公告)日：2022-01-18

申请号：US17018332

申请日：2020-09-11

Applicant: Kioxia Corporation

Inventor： Masahiro Koike ,  Michael Arnaud Quinsat ,  Nobuyuki Umetsu ,  Tsutomu Nakanishi ,  Yasuaki Ootera ,  Tsuyoshi Kondo

IPC: G11C11/16 ,  G11C5/06 ,  H01L27/22

Abstract: According to one embodiment, a device includes a member including a first portion having a first dimension in first direction, a second portion spaced from the first portion and having a second dimension in the first direction, a third portion between the first and second portions and having a third dimension in the first direction, and a fourth portion between the first and third portions and having a fourth dimension in the first direction; and a circuit to supply a shift pulse including first and second pulses to the member and move a domain wall in the member. The third dimension is less than the first dimension. The second and fourth dimensions are less than the third dimension. A second value of the second pulse is less than a first value of the first pulse.

公开(公告)号：US12274075B2

公开(公告)日：2025-04-08

申请号：US17845876

申请日：2022-06-21

Applicant: KIOXIA CORPORATION

Inventor： Shiho Nakamura ,  Tsuyoshi Kondo ,  Nobuyuki Umetsu

IPC: H10N50/80 ,  G11C5/08 ,  H10B61/00 ,  H10N50/01

Abstract: A magnetic memory includes first and second wirings, a magnetic memory line including first and second portions and extending along a first direction, the second portion electrically connected to the first wiring, and a first magnetic member electrically connected to the first portion and the second wiring and including first and second magnetic portions each having an annular shape and overlapping an end portion of the first portion of the memory line as viewed from the first direction, a third magnetic portion having a cylindrical shape and extending between an inner end of the first magnetic portion and an inner end of the second magnetic portion, and a fourth magnetic portion having a cylindrical shape and extending between an outer end of the first magnetic portion and an outer end of the second magnetic portion.

公开(公告)号：US12178138B2

公开(公告)日：2024-12-24

申请号：US17447360

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Nobuyuki Umetsu ,  Yasuaki Ootera ,  Masaki Kado ,  Michael Arnaud Quinsat ,  Naoharu Shimomura ,  Tsutomu Nakanishi ,  Shiho Nakamura ,  Susumu Hashimoto ,  Tsuyoshi Kondo

IPC: G11C16/04 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H10N50/01

Abstract: A magnetic memory includes: a first and second wirings; an insulator portion; a magnetic member including: a first portion electrically connected to the first wiring; a second portion electrically connected to the second wiring; and a third portion disposed between the first and second portions, the magnetic member extending in a first direction from the first portion toward the second portion and surrounding the insulator portion, and in a cross-section parallel to the first direction and including part of the magnetic member and part of the insulator portion, a curvature of the first portion being smaller than a curvature of the third portion, a length of the first portion in the first direction being greater than half a length of the third portion in the first direction; and a control circuit electrically connected to the first and second wirings.

公开(公告)号：US11417831B2

公开(公告)日：2022-08-16

申请号：US16538974

申请日：2019-08-13

Applicant: KIOXIA CORPORATION

Inventor： Nobuyuki Umetsu ,  Tsuyoshi Kondo ,  Masaki Kado ,  Shiho Nakamura ,  Susumu Hashimoto ,  Yasuaki Ootera ,  Michael Arnaud Quinsat ,  Masahiro Koike ,  Tsutomu Nakanishi ,  Megumi Yakabe ,  Agung Setiadi

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/08

Abstract: A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

公开(公告)号：US11232822B2

公开(公告)日：2022-01-25

申请号：US17010455

申请日：2020-09-02

Applicant: KIOXIA CORPORATION

Inventor： Michael Arnaud Quinsat ,  Tsuyoshi Kondo ,  Masahiro Koike ,  Shiho Nakamura ,  Susumu Hashimoto ,  Masaki Kado ,  Nobuyuki Umetsu ,  Yasuaki Ootera ,  Megumi Yakabe ,  Agung Setiadi ,  Shigeyuki Hirayama ,  Yoshihiro Ueda ,  Tsutomu Nakanishi

IPC: G11C11/16

Abstract: According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.