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公开(公告)号：US20240348003A1
公开(公告)日：2024-10-17
申请号：US18292721
申请日：2022-07-27
申请人： KYOCERA CORPORATION
CPC分类号： H01S5/0202 , H01S5/0203 , H01S5/0217 , H01S5/04256 , H01S5/2201 , H01S5/32341 , H01S2304/12
摘要： A manufacturing method for a semiconductor device includes a step of preparing a main substrate, a base semiconductor part formed above the main substrate, and a compound semiconductor part formed on the base semiconductor part, and a step of isolating the base semiconductor part and the compound semiconductor part with a cavity surface formed at least in the compound semiconductor part, and isolating the base semiconductor part and the compound semiconductor part into multiple element portions.
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2.发明公开公开(公告)号：US20240275133A1
公开(公告)日：2024-08-15
申请号：US18569684
申请日：2022-06-13
申请人： KYOCERA Corporation
CPC分类号： H01S5/18361 , H01S5/04256 , H01S5/423
摘要： A semiconductor device includes a semiconductor substrate including a main substrate, a base semiconductor part located above the main substrate, and a hole penetrating the main substrate in a thickness direction, a compound semiconductor part located above the base semiconductor part, a first light reflector located above the compound semiconductor part, and a second light reflector disposed in the hole, overlapping the first light reflector, and below the first light reflector.
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3.发明公开公开(公告)号：US20240234631A9
公开(公告)日：2024-07-11
申请号：US18278556
申请日：2022-02-21
申请人： KYOCERA Corporation
IPC分类号： H01L33/20 , H01L33/62 , H01S5/02315
CPC分类号： H01L33/20 , H01L33/62 , H01S5/02315 , H01L2933/0066
摘要： A manufacturing method for a semiconductor device according to the present disclosure includes preparing a laminate body including a plurality of semiconductor layers, and a first support body including an upper surface, a side surface, and a recessed portion including an opening adjacent to the upper surface and the side surface, bonding and disposing the laminate body to the upper surface of the first support body, forming a first end surface at the laminate body, and forming a first dielectric layer on the first end surface.
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4.发明公开公开(公告)号：US20240136470A1
公开(公告)日：2024-04-25
申请号：US18278556
申请日：2022-02-21
申请人： KYOCERA Corporation
IPC分类号： H01L33/20 , H01L33/62 , H01S5/02315
CPC分类号： H01L33/20 , H01L33/62 , H01S5/02315 , H01L2933/0066
摘要： A manufacturing method for a semiconductor device according to the present disclosure includes preparing a laminate body including a plurality of semiconductor layers, and a first support body including an upper surface, a side surface, and a recessed portion including an opening adjacent to the upper surface and the side surface, bonding and disposing the laminate body to the upper surface of the first support body, forming a first end surface at the laminate body, and forming a first dielectric layer on the first end surface.
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公开(公告)号：US20240283219A1
公开(公告)日：2024-08-22
申请号：US18570851
申请日：2022-06-08
申请人： KYOCERA Corporation
IPC分类号： H01S5/10 , H01S5/02315 , H01S5/0233 , H01S5/22 , H01S5/343
CPC分类号： H01S5/1042 , H01S5/02315 , H01S5/0233 , H01S5/22 , H01S5/34333 , H01S2304/04
摘要： A semiconductor laser body includes a base semiconductor part and a compound semiconductor part positioned on the base semiconductor part and containing a GaN-based semiconductor. The base semiconductor part includes a first portion and a second portion having a lower density of threading dislocation extending in a thickness direction than the first portion, the compound semiconductor part includes an optical resonator including a pair of resonant end surfaces, at least one of the pair of resonant end surfaces is an m-plane or a c-plane of the compound semiconductor part, and a resonant length, which is a distance between the pair of resonant end surfaces, is equal to or less than 200 [μm].
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6.发明公开公开(公告)号：US20240275132A1
公开(公告)日：2024-08-15
申请号：US18564900
申请日：2022-05-27
申请人： KYOCERA Corporation
CPC分类号： H01S5/18361 , H01S5/04256 , H01S5/423
摘要： A semiconductor device includes a base substrate, a first light reflector located above the base substrate, a first mask located above the first light reflector, a base semiconductor part located above the first mask, a compound semiconductor part located above the base semiconductor part, and a second light reflector located above the compound semiconductor part and the first light reflector.
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公开(公告)号：US20240120708A1
公开(公告)日：2024-04-11
申请号：US18572543
申请日：2022-06-13
申请人： KYOCERA Corporation
CPC分类号： H01S5/04257 , H01S5/2205 , H01S5/34333
摘要： A light-emitting body includes a base semiconductor part including a nitride semiconductor, a compound semiconductor part including a nitride semiconductor and positioned above the base semiconductor part, and a first electrode and a second electrode. The base semiconductor part includes first part and second part having a density of threading dislocation extending in a thickness direction lower than that of the first part, at least part of the first electrode and at least part of the second electrode are positioned on the compound semiconductor part, and at least part of the first electrode is positioned above the second part.
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公开(公告)号：US20220247157A1
公开(公告)日：2022-08-04
申请号：US17585643
申请日：2022-01-27
申请人： KYOCERA Corporation
IPC分类号： H01S5/40 , H01S5/02345
摘要： A substrate includes an upper surface and wiring lines disposed on the upper surface. The first optical semiconductor element is disposed on the upper surface of the substrate, and the second optical semiconductor element is adjacent to the first optical semiconductor element. The first optical semiconductor element includes a first electrode and a second electrode each disposed at a lower end portion of the first optical semiconductor element, and each of the first electrode and the second electrode is connected to a corresponding one of the wiring lines.
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