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公开(公告)号：US20210278365A1
公开(公告)日：2021-09-09
申请号：US17017284
申请日：2020-09-10
发明人： Ko YAMADA , Atsunobu ISOBAYASHI , Tatsuro SAITO
IPC分类号： G01N27/414 , G01N1/40 , G01N33/00
摘要： According to one embodiment, a molecule detecting device includes a first detector including a first detecting element configured to detect a first molecular group in a gaseous sample, a second detector including a second detecting element configured to detect a second molecular group having a concentration higher than the first molecular group in a gaseous sample, and an absorber including an adsorbing material provided between the first detector and the second detector and configured to adsorb at least the first molecular group.
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公开(公告)号：US20180275084A1
公开(公告)日：2018-09-27
申请号：US15910815
申请日：2018-03-02
IPC分类号： G01N27/12 , C12Q1/00 , G01N33/551 , G01N33/543
CPC分类号： G01N27/125 , C12Q1/001 , G01N27/128 , G01N27/4146 , G01N33/54373 , G01N33/5438 , G01N33/551
摘要： According to one embodiment, a sensor includes a graphene film and at least two electrodes. The graphene film has an opening. The opening dominantly has either a zigzag edge or an armchair edge. The two electrodes electrically contact the graphene film, for reading a change in electric characteristics of the graphene film due to coaction with an object to be detected.
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公开(公告)号：US20140070425A1
公开(公告)日：2014-03-13
申请号：US13846513
申请日：2013-03-18
IPC分类号： H01L23/538 , H01L21/768
CPC分类号： H01L21/76879 , B82Y40/00 , H01L21/32051 , H01L21/32055 , H01L21/76805 , H01L21/76838 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53276 , H01L23/5384 , H01L23/544 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a semiconductor substrate including semiconductor elements formed thereon, a graphene wiring structure stuck on the substrate with a connection insulating film disposed therebetween and including graphene wires, and through vias each formed through the graphene wiring structure and connection insulating film to connect part of the semiconductor elements to the graphene wires.
摘要翻译： 根据一个实施例，半导体器件包括：半导体衬底，其包括形成在其上的半导体元件，石墨烯布线结构粘附在衬底上，其间设置有连接绝缘膜，并且包括石墨烯线，以及通过通过所述石墨烯布线结构和连接形成的通孔 绝缘膜以将部分半导体元件连接到石墨烯线。
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公开(公告)号：US20130249093A1
公开(公告)日：2013-09-26
申请号：US13768567
申请日：2013-02-15
发明人： Yuichi YAMAZAKI , Makoto WADA , Tatsuro SAITO , Tadashi SAKAI
IPC分类号： H01L23/498
CPC分类号： H01L23/53276 , B82Y30/00 , H01L23/49866 , H01L23/5226 , H01L23/528 , H01L2924/0002 , Y10S977/734 , H01L2924/00
摘要： A conductive film of an embodiment includes: a fine catalytic metal particle as a junction and a graphene extending in a network form from the junction.
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公开(公告)号：US20220081702A1
公开(公告)日：2022-03-17
申请号：US17199380
申请日：2021-03-11
发明人： Tatsuro SAITO , Yoshiaki SUGIZAKI
IPC分类号： C12Q1/46
摘要： According to one embodiment, a sensor for detecting a target substance in gas a sample includes a target substance uptake unit that brings an acetylcholine aqueous solution into contact with a gas sample to dissolve a target substance in the gas sample into the acetylcholine aqueous solution, a reaction unit that holds acetylcholinesterase and brings the solution delivered from the target substance uptake unit into contact with the acetylcholinesterase, and a detection unit that measures a change in an amount of acetylcholine decomposition product produced in the solution delivered from the reaction unit.
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公开(公告)号：US20160268210A1
公开(公告)日：2016-09-15
申请号：US14842545
申请日：2015-09-01
发明人： Tatsuro SAITO , Masayuki KITAMURA , Atsuko SAKATA , Makoto WADA , Akihiro KAJITA , Tadashi SAKAI
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53276 , H01L21/76861 , H01L21/76876 , H01L21/76885
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes interconnects each including a catalyst layer and a graphene layer thereon. The catalyst layer includes a first to fifth catalyst regions arranged along a first direction in order of the first to fifth catalyst regions. The first, third and fifth catalyst regions include upper surfaces higher than those of the second and fourth catalyst regions. Adjacent ones of the first to fifth catalyst regions are in contact with each other. A distance between the first and the third catalyst region and a distance between the third and fifth catalyst region are greater than a mean free path of graphene. The graphene layer includes a first graphene layer on the second catalyst region and a second graphene layer on the fourth catalyst region.
摘要翻译： 根据一个实施例，公开了一种半导体器件。 该装置包括各自包括催化剂层和其上的石墨烯层的互连。 催化剂层包括按照第一至第五催化剂区域的顺序沿第一方向布置的第一至第五催化剂区域。 第一，第三和第五催化剂区域包括高于第二和第四催化剂区域的上表面。 相邻的第一至第五催化剂区域彼此接触。 第一和第三催化剂区域之间的距离以及第三和第五催化剂区域之间的距离大于石墨烯的平均自由程。 石墨烯层包括第二催化剂区上的第一石墨烯层和第四催化剂区上的第二石墨烯层。
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公开(公告)号：US20140084250A1
公开(公告)日：2014-03-27
申请号：US13846850
申请日：2013-03-18
IPC分类号： H01L29/66
CPC分类号： H01L29/66977 , B82Y30/00 , C01B32/186 , H01L23/528 , H01L23/5283 , H01L23/53276 , H01L2924/0002 , Y10S977/734 , Y10S977/932 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a catalyst underlying layer formed on a substrate including semiconductor elements formed thereon and processed in a wiring pattern, a catalyst metal layer that is formed on the catalyst underlying layer and whose width is narrower than that of the catalyst underlying layer, and a graphene layer growing with a sidewall of the catalyst metal layer set as a growth origin and formed to surround the catalyst metal layer.
摘要翻译： 根据一个实施例，半导体器件包括形成在其上形成有并以布线图案形成的半导体元件的基板上的催化剂底层，形成在催化剂下层上的宽度比其宽度窄的催化剂金属层 催化剂底层，以及生长在催化剂金属层的侧壁上的石墨烯层，其被设置为生长来源并形成以包围催化剂金属层。
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公开(公告)号：US20210080416A1
公开(公告)日：2021-03-18
申请号：US16818075
申请日：2020-03-13
发明人： Yoshiaki SUGIZAKI , Tatsuro SAITO
IPC分类号： G01N27/12 , G01N33/497 , B01L3/00 , G01N33/543 , G01N27/414
摘要： According to one embodiment, an apparatus for maintaining liquid membrane includes a liquid supply unit which supplies a liquid onto a sensor element and forms a liquid membrane, and a liquid discharge unit which discharges the liquid in the liquid membrane.
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公开(公告)号：US20170263562A1
公开(公告)日：2017-09-14
申请号：US15266626
申请日：2016-09-15
IPC分类号： H01L23/532 , H01L21/3205 , H01L21/768 , H01L23/528 , H01L23/522
CPC分类号： H01L23/53276 , H01L21/7682 , H01L21/76829 , H01L21/76876 , H01L21/76879 , H01L23/528
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a substrate, and a first interconnect on the substrate. The first interconnect includes a first catalyst layer capable of growing graphene, a graphene layer in contact with a side surface of the first catalyst layer. The device further includes a non-catalyst layer in contact with a bottom surface of the graphene layer, and incapable of growing graphene.
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公开(公告)号：US20170069576A1
公开(公告)日：2017-03-09
申请号：US15067140
申请日：2016-03-10
IPC分类号： H01L23/532 , H01L23/522 , H01L21/768 , H01L23/528
CPC分类号： H01L23/53276 , H01L21/76834 , H01L21/76871 , H01L21/76885 , H01L21/76892 , H01L23/5226 , H01L23/5283
摘要： According to one embodiment, a semiconductor device includes an underlayer formed on a substrate, a catalyst layer disposed on the underlayer and extending in an interconnect length direction. The device further includes an upper graphene layer formed on an upper face of the catalyst layer, and side graphene layers provided on two respective side faces of the catalyst layer, the two side faces extending in the interconnect length direction.
摘要翻译： 根据一个实施例，半导体器件包括形成在衬底上的衬底，设置在衬底上并在互连长度方向上延伸的催化剂层。 该装置还包括形成在催化剂层的上表面上的上部石墨烯层和设置在催化剂层的两个相应侧面上的侧面石墨烯层，两个侧面沿互连长度方向延伸。
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