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公开(公告)号：US20150111393A1
公开(公告)日：2015-04-23
申请号：US14172641
申请日：2014-02-04
IPC分类号： H01L21/308 , H01L21/3105 , G03F7/00 , H01L21/027
CPC分类号： H01L21/3086 , G03F7/0002 , H01L21/0274 , H01L21/3105
摘要： In the manufacturing method of a semiconductor device according to the present embodiment, a resist is supplied on a base material. A template including a first template region having a device pattern and a second template region being adjacent to the device pattern and having supporting column patterns is pressed against the resist on the base material. The resist is cured, thereby transferring the device pattern to the resist on a first material region of the base material corresponding to the first template region and at the same time transferring the supporting column patterns to the resist on a second material region of the base material corresponding to the second template region to form supporting columns. The supporting columns are contacted with the first template region when the device pattern is transferred to a resist supplied to the second material region.
摘要翻译： 在本实施方式的半导体装置的制造方法中，在基材上供给抗蚀剂。 包括具有装置图案的第一模板区域和与装置图案相邻并且具有支撑柱图案的第二模板区域的模板被压靠在基材上的抗蚀剂上。 抗蚀剂被固化，从而在对应于第一模板区域的基材的第一材料区域上将装置图案转印到抗蚀剂上，同时在基材的第二材料区域上将支撑柱图案转印到抗蚀剂上 对应于第二模板区域以形成支撑柱。 当将装置图案转移到提供给第二材料区域的抗蚀剂时，支撑柱与第一模板区域接触。
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公开(公告)号：US20140110850A1
公开(公告)日：2014-04-24
申请号：US13909665
申请日：2013-06-04
发明人： Atsunobu ISOBAYASHI
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L23/48 , H01L21/32139 , H01L21/76802 , H01L21/7682 , H01L21/76885 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a first insulating film formed above a substrate, wires formed on the first insulating film, an air gap formed between the adjacent wires, and a second insulating film formed on the wires and the air gap. Each of the wires has a metal film formed on the first insulating film and a hard mask formed on the metal film, the hard mask has a first layer and a second layer, a second internal angle formed by the under surface and the side surface of the second layer on a cross section of the second layer is smaller than a first internal angle formed by the under surface and the side surface of the first layer on a cross section of the first layer, and the top surface of the air gap is higher than the top surface of the metal film.
摘要翻译： 根据一个实施例，半导体器件包括形成在衬底上的第一绝缘膜，形成在第一绝缘膜上的电线，形成在相邻电线之间的气隙和形成在电线和气隙上的第二绝缘膜。 每个电线具有形成在第一绝缘膜上的金属膜和形成在金属膜上的硬掩模，硬掩模具有第一层和第二层，第二内角由下表面和侧表面形成 在第二层的横截面上的第二层小于由第一层的下表面和第一层的侧表面在第一层的横截面上形成的第一内角，并且气隙的顶表面较高 比金属膜的顶面。
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公开(公告)号：US20140084250A1
公开(公告)日：2014-03-27
申请号：US13846850
申请日：2013-03-18
IPC分类号： H01L29/66
CPC分类号： H01L29/66977 , B82Y30/00 , C01B32/186 , H01L23/528 , H01L23/5283 , H01L23/53276 , H01L2924/0002 , Y10S977/734 , Y10S977/932 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a catalyst underlying layer formed on a substrate including semiconductor elements formed thereon and processed in a wiring pattern, a catalyst metal layer that is formed on the catalyst underlying layer and whose width is narrower than that of the catalyst underlying layer, and a graphene layer growing with a sidewall of the catalyst metal layer set as a growth origin and formed to surround the catalyst metal layer.
摘要翻译： 根据一个实施例，半导体器件包括形成在其上形成有并以布线图案形成的半导体元件的基板上的催化剂底层，形成在催化剂下层上的宽度比其宽度窄的催化剂金属层 催化剂底层，以及生长在催化剂金属层的侧壁上的石墨烯层，其被设置为生长来源并形成以包围催化剂金属层。
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公开(公告)号：US20200300804A1
公开(公告)日：2020-09-24
申请号：US16567124
申请日：2019-09-11
IPC分类号： G01N27/414
摘要： According to one embodiment, a sensor is disclosed. The sensor includes a predetermined number of vesicles and a first detector. The first detector includes a channel film that connects with the vesicles, and a trench provided for connecting the channel film with the vesicles.
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公开(公告)号：US20160056256A1
公开(公告)日：2016-02-25
申请号：US14637041
申请日：2015-03-03
发明人： Taishi ISHIKURA , Akihiro KAJITA , Tadashi SAKAI , Atsunobu ISOBAYASHI , Makoto WADA , Tatsuro SAITO , Masayuki KITAMURA , Atsuko SAKATA
IPC分类号： H01L29/45 , H01L21/283 , H01L23/544
CPC分类号： H01L21/283 , H01L21/0243 , H01L21/02527 , H01L21/02645 , H01L21/28562 , H01L21/76838 , H01L21/76864 , H01L21/76876 , H01L23/53276 , H01L23/544 , H01L29/1606 , H01L2223/54426 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a foundation layer including first and second layers being different from each other in material, and the foundation layer including a surface on which a boundary of the first and second layers is presented, a catalyst layer on the surface of the foundation layer, and the catalyst layer including a protruding area. The device further includes a graphene layer being in contact with the protruding area.
摘要翻译： 根据一个实施例，公开了一种半导体器件。 该装置包括：基材层，其包括在材料中彼此不同的第一和第二层，并且所述基础层包括其上呈现第一和第二层的边界的表面，基础层表面上的催化剂层， 并且所述催化剂层包括突出区域。 该装置还包括与突出区域接触的石墨烯层。
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公开(公告)号：US20150206842A1
公开(公告)日：2015-07-23
申请号：US14478996
申请日：2014-09-05
IPC分类号： H01L23/532 , H01L23/528 , H01L23/522 , H01L21/768
CPC分类号： H01L23/53276 , H01L21/76849 , H01L21/76852 , H01L21/76876 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, there is provided a semiconductor device using graphene, includes a catalyst layer formed on or in a substrate along with an interconnect pattern and a graphene layer formed on the catalyst layer. The graphene layer is arranged parallel to a narrower linewidth than the width of the interconnect pattern.
摘要翻译： 根据一个实施例，提供了一种使用石墨烯的半导体器件，包括形成在衬底上或衬底中的催化剂层以及形成在催化剂层上的互连图案和石墨烯层。 石墨烯层平行于比互连图案的宽度窄的线宽。
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公开(公告)号：US20140284814A1
公开(公告)日：2014-09-25
申请号：US13958093
申请日：2013-08-02
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76877 , B82Y10/00 , B82Y40/00 , H01L23/5226 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/84 , Y10S977/94 , H01L2924/00
摘要： According to one embodiment, a semiconductor device includes a first wiring, a second wiring disposed in the same layer as the first wiring, a first via connected to a bottom surface of the first wiring and formed of a carbon nanotube, and a second via connected to a bottom surface of the second wiring and formed of a metal.
摘要翻译： 根据一个实施例，半导体器件包括第一布线，布置在与第一布线相同的层中的第二布线，连接到第一布线的底表面并由碳纳米管形成的第一通孔， 到第二布线的底表面并由金属形成。
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公开(公告)号：US20220298550A1
公开(公告)日：2022-09-22
申请号：US17445486
申请日：2021-08-19
IPC分类号： C12Q1/6811 , G01N27/327
摘要： A chemical sensor device includes a sensor element; an oligopeptide mounted on a surface of the sensor element, the oligopeptide containing a first peptide sequence forming a β-sheet structure and a cysteine residue at a position different from the first peptide sequence; and a probe that is bonded to the cysteine residue and binds to or reacts with a specific substance.
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公开(公告)号：US20210278365A1
公开(公告)日：2021-09-09
申请号：US17017284
申请日：2020-09-10
发明人： Ko YAMADA , Atsunobu ISOBAYASHI , Tatsuro SAITO
IPC分类号： G01N27/414 , G01N1/40 , G01N33/00
摘要： According to one embodiment, a molecule detecting device includes a first detector including a first detecting element configured to detect a first molecular group in a gaseous sample, a second detector including a second detecting element configured to detect a second molecular group having a concentration higher than the first molecular group in a gaseous sample, and an absorber including an adsorbing material provided between the first detector and the second detector and configured to adsorb at least the first molecular group.
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公开(公告)号：US20180275084A1
公开(公告)日：2018-09-27
申请号：US15910815
申请日：2018-03-02
IPC分类号： G01N27/12 , C12Q1/00 , G01N33/551 , G01N33/543
CPC分类号： G01N27/125 , C12Q1/001 , G01N27/128 , G01N27/4146 , G01N33/54373 , G01N33/5438 , G01N33/551
摘要： According to one embodiment, a sensor includes a graphene film and at least two electrodes. The graphene film has an opening. The opening dominantly has either a zigzag edge or an armchair edge. The two electrodes electrically contact the graphene film, for reading a change in electric characteristics of the graphene film due to coaction with an object to be detected.
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