公开(公告)号：US07754997B2

公开(公告)日：2010-07-13

申请号：US11924086

申请日：2007-10-25

申请人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

发明人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

IPC分类号： B23K9/00

CPC分类号： H01J37/321 ,  H01J37/32633 ,  H01J37/3266

摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

摘要翻译： 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US07585384B2

公开(公告)日：2009-09-08

申请号：US12201156

申请日：2008-08-29

申请人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

发明人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

IPC分类号： C23C1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32633 ,  H01J37/3266

摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

摘要翻译： 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US07972467B2

公开(公告)日：2011-07-05

申请号：US10418996

申请日：2003-04-17

申请人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

发明人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, Jr.

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/321 ,  H01J37/32633 ,  H01J37/3266

摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

摘要翻译： 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US20080105660A1

公开(公告)日：2008-05-08

申请号：US11924086

申请日：2007-10-25

申请人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger

发明人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger

IPC分类号： B23K9/00

CPC分类号： H01J37/321 ,  H01J37/32633 ,  H01J37/3266

摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

摘要翻译： 一种被配置为将等离子体限制在等离子体处理室中的处理区域内的装置。 在一个实施例中，该装置包括具有挡板的环，该挡板具有多个槽和多个指状物。 每个槽被构造成具有小于包含在处理区域中的等离子体护套的厚度的宽度。

公开(公告)号：US20080314522A1

公开(公告)日：2008-12-25

申请号：US12201156

申请日：2008-08-29

申请人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, JR.

发明人： Kallol Bera ,  Yan Ye ,  James D. Carducci ,  Daniel J. Hoffman ,  Steven C. Shannon ,  Douglas A. Buchberger, JR.

IPC分类号： C23F1/08

CPC分类号： H01J37/321 ,  H01J37/32633 ,  H01J37/3266

摘要： An apparatus configured to confine a plasma within a processing region in a plasma processing chamber. In one embodiment, the apparatus includes a ring that has a baffle having a plurality of slots and a plurality of fingers. Each slot is configured to have a width less than the thickness of a plasma sheath contained in the processing region.

公开(公告)号：US06652712B2

公开(公告)日：2003-11-25

申请号：US10028646

申请日：2001-12-19

申请人： Shiang-Bau Wang ,  Daniel J. Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  David McParland ,  Matthew L. Miller ,  Douglas A. Buchberger, Jr. ,  Steven C. Shannon

发明人： Shiang-Bau Wang ,  Daniel J. Hoffman ,  Chunshi Cui ,  Yan Ye ,  Gerardo Delgadino ,  David McParland ,  Matthew L. Miller ,  Douglas A. Buchberger, Jr. ,  Steven C. Shannon

IPC分类号： C23C1600

CPC分类号： H01J37/321

摘要： An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in which current flow is parallel, the facing portions being sufficiently close to at least nearly share a common current path, whereby to form transitions across the facing portions between opposing magnetic polarizations.

摘要翻译： 用于处理半导体晶片的等离子体反应器的感应天线连接到射频（RF）电源，并且由布置在相反方向上的连续回路中的导体组成，相邻的一对连续的回路具有面对部分 电流流动是平行的，面对部分足够接近至少几乎共享公共电流路径，从而在相对的磁极化之间跨越相对部分形成过渡。

公开(公告)号：US08608900B2

公开(公告)日：2013-12-17

申请号：US11409183

申请日：2006-04-21

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： H01L21/3065 ,  C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/503 ,  C23C16/509

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。 反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源 从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

公开(公告)号：US08337660B2

公开(公告)日：2012-12-25

申请号：US12855678

申请日：2010-08-12

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC分类号： H01L21/306 ,  C23C16/46 ,  C23C16/52 ,  H01L21/683

CPC分类号： H01L21/67248 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber having a top surface for supporting a workpiece and having indentations in the top surface that form enclosed gas flow channels whenever covered by a workpiece resting on the top surface. The reactor further includes thermal control apparatus thermally coupled to the electrostatic chuck, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck, a pressurized gas supply of a thermally conductive gas, a controllable gas valve coupling the pressurized gas supply to the indentations to facilitate filling the channels with the thermally conductive gas for heat transfer between a backside of a workpiece and the electrostatic chuck at a heat transfer rate that is a function of the pressure against the backside of the workpiece of the thermally conductive gas. The reactor further includes an agile workpiece temperature control loop including (a) a temperature probe in the electrostatic chuck, and (b) a backside gas pressure controller coupled to an output of the temperature probe and responsive to a specified desired temperature, the controller governing the gas valve in response to a difference between the output of the temperature probe and the desired temperature.

公开(公告)号：US08092639B2

公开(公告)日：2012-01-10

申请号：US12855674

申请日：2010-08-12

申请人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

发明人： Douglas A. Buchberger, Jr. ,  Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman ,  Kenneth W. Cowans ,  William W. Cowans ,  Glenn W. Zubillaga ,  Isaac Millan

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50

CPC分类号： H01L21/67248 ,  F25B49/02 ,  F25B2400/0401 ,  F25B2400/0403 ,  F25B2400/0411 ,  F25B2700/21174 ,  F25B2700/21175 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/32724 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/6831 ,  H05H2001/4682

摘要： A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature. The reactor further includes a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor, and a control processor coupled to the thermal model and to the memory and governing the backside gas pressure source in response to a prediction from the model of a change in the selected pressure that would compensate for the next scheduled change in RF power or implement the next scheduled change in wafer temperature.

摘要翻译： 具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于在选定压力下将导热气体施加到每次形成的工件表面界面中 工件被保持在表面上，蒸发器在静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。 反应器还包括静电卡盘中的温度传感器和存储RF功率或晶片温度变化计划的存储器。 反应器还包括热模型，其能够基于来自温度传感器的测量来模拟蒸发器和表面之间的热传递;以及控制处理器，其耦合到热模型和存储器，并且响应于所述热模型和存储器控制背侧气体压力源 从所选压力的变化的模型中预测将补偿下一次调频的功率变化或实现下一个预定的晶片温度的变化。

公开(公告)号：US08092638B2

公开(公告)日：2012-01-10

申请号：US11409292

申请日：2006-04-21

申请人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

发明人： Paul Lukas Brillhart ,  Richard Fovell ,  Hamid Tavassoli ,  Douglas A. Buchberger, Jr. ,  Douglas H. Burns ,  Kallol Bera ,  Daniel J. Hoffman

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67109 ,  H01L21/67069 ,  H01L21/67248 ,  H01L21/6831

摘要： A plasma reactor for processing a workpiece includes a reactor chamber, an electrostatic chuck within the chamber for supporting a workpiece, an RF plasma bias power generator coupled to apply RF power to the electrostatic chuck and a refrigeration loop having an evaporator inside the electrostatic chuck with a refrigerant inlet and a refrigerant outlet. Preferably, the evaporator includes a meandering passageway distributed in a plane beneath a top surface of the electrostatic chuck. Preferably, refrigerant within the evaporator is apportioned between a vapor phase and a liquid phase. As a result, heat transfer between the electrostatic chuck and the refrigerant within the evaporator is a constant-temperature process. This feature improves uniformity of temperature distribution across a diameter of the electrostatic chuck.

摘要翻译： 用于处理工件的等离子体反应器包括反应室，用于支撑工件的室内的静电卡盘，耦合以向静电卡盘施加RF功率的RF等离子体偏置功率发生器和在静电卡盘内具有蒸发器的制冷回路， 制冷剂入口和制冷剂出口。 优选地，蒸发器包括分布在静电卡盘的顶表面下方的平面中的曲折通道。 优选地，蒸发器内的制冷剂在气相和液相之间分配。 结果，静电吸盘和蒸发器内的制冷剂之间的热传递是恒温过程。 该特征改善了静电卡盘的直径上的温度分布的均匀性。