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    NON-VOLATILE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING EMBEDDED NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH SIDEWALL GATE
    1.
    发明申请
    NON-VOLATILE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING EMBEDDED NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE WITH SIDEWALL GATE 有权
    非挥发性半导体器件及其制造嵌入式非易失性半导体存储器件的方法

    公开(公告)号：US20100105199A1

    公开(公告)日：2010-04-29

    申请号：US12652517

    申请日：2010-01-05

    申请人： Kan Yasui ,  Digh Hisamoto ,  Tetsuya Ishimaru ,  Shin-Ichiro Kimura

    发明人： Kan Yasui ,  Digh Hisamoto ,  Tetsuya Ishimaru ,  Shin-Ichiro Kimura

    IPC分类号： H01L21/28

    CPC分类号： H01L27/115 ,  G11C16/0425 ,  H01L27/11568 ,  H01L29/42344

    摘要： A method of manufacturing a non-volatile semiconductor memory device is provided which overcomes a problem of penetration of implanted ions due to the difference of optimal gate height in simultaneous formation of a self-align split gate type memory cell utilizing a side wall structure and a scaled MOS transistor. A select gate electrode to form a side wall in a memory area is formed to be higher than that of the gate electrode in a logic area so that the height of the side wall gate electrode of the self-align split gate memory cell is greater than that of the gate electrode in the logic area. Height reduction for the gate electrode is performed in the logic area before gate electrode formation.

    摘要翻译： 提供一种制造非挥发性半导体存储器件的方法，其克服了由于最佳栅极高度的不同而引入的注入离子的问题，同时形成利用侧壁结构的自对准分裂栅型存储单元和 缩放MOS晶体管。 形成在存储区域中形成侧壁的选择栅电极比逻辑区域中的栅电极高，使得自对准分离栅极存储单元的侧壁栅电极的高度大于 在逻辑区域的栅电极。 栅极电极的高度降低在栅电极形成之前的逻辑区域中进行。

    Nonvolatile memory device and semiconductor device
    3.
    发明授权
    Nonvolatile memory device and semiconductor device 有权
    非易失性存储器件和半导体器件

    公开(公告)号：US07529126B2

    公开(公告)日：2009-05-05

    申请号：US11472993

    申请日：2006-06-23

    申请人： Toshihiro Tanaka ,  Takashi Yamaki ,  Yutaka Shinagawa ,  Daisuke Okada ,  Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru

    发明人： Toshihiro Tanaka ,  Takashi Yamaki ,  Yutaka Shinagawa ,  Daisuke Okada ,  Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru

    IPC分类号： G11C11/34 ,  G11C16/04

    CPC分类号： G11C16/10 ,  G11C16/0433

    摘要： Disclosed here is a method for speeding up data writing and reducing power consumption by reducing the variation of the threshold voltage of each of non-volatile memory cells at data writing. When writing data in a memory cell, a voltage of about 8V is applied to the memory gate line, a voltage of about 5V is applied to the source line, a voltage of about 1.5V is applied to the selected gate line respectively. At that time, in the writing circuit, the writing pulse is 0, the writing latch output a High signal, and a NAND-circuit outputs a Low signal. And, a constant current of about 1iA flows in a constant current source transistor and the bit line is discharged by a constant current of about 1iA to flow a current in the memory cell.

    摘要翻译： 这里公开了一种通过在数据写入时减小每个非易失性存储单元的阈值电压的变化来加速数据写入并降低功耗的方法。 当在存储单元中写入数据时，约8V的电压被施加到存储器栅极线，大约5V的电压被施加到源极线，大约1.5V的电压分别施加到所选择的栅极线。 此时，在写入电路中，写入脉冲为0，写入锁存器输出高电平信号，NAND电路输出低电平信号。 并且，在恒定电流源晶体管中流动约1iA的恒定电流，并且通过约1iA的恒定电流放电位线以使存储单元中的电流流动。

    SEMICONDUCTOR NONVOLATILE MEMORY DEVICE
    4.
    发明申请
    SEMICONDUCTOR NONVOLATILE MEMORY DEVICE 有权
    半导体非易失性存储器件

    公开(公告)号：US20090014775A1

    公开(公告)日：2009-01-15

    申请号：US12233670

    申请日：2008-09-19

    申请人： Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru ,  Shinichiro Kimura ,  Daisuke Okada

    发明人： Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru ,  Shinichiro Kimura ,  Daisuke Okada

    IPC分类号： H01L29/00

    CPC分类号： G11C16/0425 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3454 ,  G11C16/3459

    摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.

    摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

    NONVOLATILE SEMICONDUCTOR MEMORY DEVICES WITH CHARGE INJECTION CORNER
    5.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY DEVICES WITH CHARGE INJECTION CORNER 有权
    带电荷注射角的非线性半导体存储器件

    公开(公告)号：US20080290401A1

    公开(公告)日：2008-11-27

    申请号：US12124143

    申请日：2008-05-20

    申请人： Kan YASUI ,  Tetsuya Ishimaru ,  Digh Hisamoto ,  Yasuhiro Shimamoto

    发明人： Kan YASUI ,  Tetsuya Ishimaru ,  Digh Hisamoto ,  Yasuhiro Shimamoto

    IPC分类号： H01L29/792

    CPC分类号： H01L29/792 ,  G11C16/0425 ,  G11C16/10 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42344

    摘要： An erase method where a corner portion on which an electric field concentrates locally is provided on the memory gate electrode, and charges in the memory gate electrode are injected into a charge trap film in a gate dielectric with Fowler-Nordheim tunneling operation is used. Since current consumption at the time of erase can be reduced by the Fowler-Nordheim tunneling, a power supply circuit area of a memory module can be reduced. Since write disturb resistance can be improved, a memory array area can be reduced by adopting a simpler memory array configuration. Owing to both the effects, an area of the memory module can be largely reduced, so that manufacturing cost can be reduced. Further, since charge injection centers of write and erase coincide with each other, so that (program and erase) endurance is improved.

    摘要翻译： 在存储栅电极上设置有局部集中电场的角部的擦除方法，并且使用Fowler-Nordheim隧道操作将存储栅电极中的电荷注入栅极电介质中的电荷陷阱膜。 由于通过Fowler-Nordheim隧道可以减少擦除时的电流消耗，因此可以减少存储器模块的电源电路区域。 由于可以提高写入干扰电阻，所以可以通过采用更简单的存储器阵列配置来减少存储器阵列区域。 由于这两个效果，可以大大减少存储器模块的面积，从而可以降低制造成本。 此外，由于写入和擦除的电荷注入中心彼此一致，所以（编程和擦除）耐久性得到改善。

    Semiconductor nonvolatile memory device
    6.
    发明申请
    Semiconductor nonvolatile memory device 失效
    半导体非易失性存储器件

    公开(公告)号：US20070183206A1

    公开(公告)日：2007-08-09

    申请号：US11727592

    申请日：2007-03-27

    申请人： Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru ,  Shinichiro Kimura ,  Daisuke Okada

    发明人： Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru ,  Shinichiro Kimura ,  Daisuke Okada

    IPC分类号： G11C11/34 ,  G11C16/04

    CPC分类号： G11C16/0425 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3454 ,  G11C16/3459

    摘要： An operation scheme for operating stably a semiconductor nonvolatile memory device is provided. When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes. Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.

    摘要翻译： 提供一种稳定运行半导体非易失性存储器件的操作方案。 当在分裂栅极结构的半导体非易失性存储器件中进行热空穴注入时，使用不随时间变化的交叉点来验证热孔注入。 因此，可以验证擦除状态，而不知道任何时变变化。 此外，通过将多次脉冲电压或多级电压施加到栅极部分进行编程或编程/擦除。

    Nonvolatile memory device and semiconductor device
    7.
    发明授权
    Nonvolatile memory device and semiconductor device 有权
    非易失性存储器件和半导体器件

    公开(公告)号：US07085157B2

    公开(公告)日：2006-08-01

    申请号：US10805365

    申请日：2004-03-22

    申请人： Toshihiro Tanaka ,  Takashi Yamaki ,  Yutaka Shinagawa ,  Daisuke Okada ,  Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru

    发明人： Toshihiro Tanaka ,  Takashi Yamaki ,  Yutaka Shinagawa ,  Daisuke Okada ,  Digh Hisamoto ,  Kan Yasui ,  Tetsuya Ishimaru

    IPC分类号： G11C11/34 ,  G11C16/04

    CPC分类号： G11C16/10 ,  G11C16/0433

    摘要： A method for speeding up data writing and reducing power consumption by reducing the variation of the threshold voltage of each of non-volatile memory cells at data writing. When writing data in a memory cell, a voltage of about 8V is applied to the memory gate line, a voltage of about 5V is applied to the source line, a voltage of about 1.5V is applied to the selected gate line respectively. At that time, in the writing circuit, the writing pulse is 0, the writing latch output a High signal, and a NAND-circuit outputs a Low signal. And, a constant current of about 1 ìA flows in a constant current source transistor and the bit line is discharged by a constant current of about 1 ìA to flow a current in the memory cell.

    摘要翻译： 一种用于通过在数据写入时减小每个非易失性存储单元的阈值电压的变化来加速数据写入和降低功耗的方法。 当在存储单元中写入数据时，约8V的电压被施加到存储器栅极线，大约5V的电压被施加到源极线，大约1.5V的电压分别施加到所选择的栅极线。 此时，在写入电路中，写入脉冲为0，写入锁存器输出高电平信号，NAND电路输出低电平信号。 并且，在恒定电流源晶体管中流动约1AA的恒定电流，并且通过约1μA的恒定电流放电位线以使存储器单元中的电流流动。

    Nonvolatile semiconductor memory devices with charge injection corner
    8.
    发明授权
    Nonvolatile semiconductor memory devices with charge injection corner 有权
    具有电荷注入角的非易失性半导体存储器件

    公开(公告)号：US07915666B2

    公开(公告)日：2011-03-29

    申请号：US12124143

    申请日：2008-05-20

    申请人： Kan Yasui ,  Tetsuya Ishimaru ,  Digh Hisamoto ,  Yasuhiro Shimamoto

    发明人： Kan Yasui ,  Tetsuya Ishimaru ,  Digh Hisamoto ,  Yasuhiro Shimamoto

    IPC分类号： H01L29/792

    CPC分类号： H01L29/792 ,  G11C16/0425 ,  G11C16/10 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/42344

    摘要： An erase method where a corner portion on which an electric field concentrates locally is provided on the memory gate electrode, and charges in the memory gate electrode are injected into a charge trap film in a gate dielectric with Fowler-Nordheim tunneling operation is used. Since current consumption at the time of erase can be reduced by the Fowler-Nordheim tunneling, a power supply circuit area of a memory module can be reduced. Since write disturb resistance can be improved, a memory array area can be reduced by adopting a simpler memory array configuration. Owing to both the effects, an area of the memory module can be largely reduced, so that manufacturing cost can be reduced. Further, since charge injection centers of write and erase coincide with each other, so that (program and erase) endurance is improved.

    摘要翻译： 在存储栅电极上设置有局部集中电场的角部的擦除方法，并且使用Fowler-Nordheim隧道操作将存储栅电极中的电荷注入栅极电介质中的电荷陷阱膜。 由于通过Fowler-Nordheim隧道可以减少擦除时的电流消耗，因此可以减少存储器模块的电源电路区域。 由于可以提高写入干扰电阻，所以可以通过采用更简单的存储器阵列配置来减少存储器阵列区域。 由于这两个效果，可以大大减少存储器模块的面积，从而可以降低制造成本。 此外，由于写入和擦除的电荷注入中心彼此一致，所以（编程和擦除）耐久性得到改善。

    Nonvolatile semiconductor memory device
    9.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US07847331B2

    公开(公告)日：2010-12-07

    申请号：US11030900

    申请日：2005-01-10

    申请人： Tetsuya Ishimaru ,  Digh Hisamoto ,  Kan Yasui ,  Shinichiro Kimura

    发明人： Tetsuya Ishimaru ,  Digh Hisamoto ,  Kan Yasui ,  Shinichiro Kimura

    IPC分类号： H01L29/792

    CPC分类号： G11C16/0466 ,  H01L21/28282 ,  H01L29/66833 ,  H01L29/792

    摘要： In a situation where a memory cell includes an ONO film, which comprises a silicon nitride film for charge storage and oxide films positioned above and below the silicon nitride film; a memory gate above the ONO film; a select gate, which is adjacent to a lateral surface of the memory gate via the ONO film; a gate insulator positioned below the select gate; a source region; and a drain region, an erase operation is performed by injecting holes generated by BTBT into the silicon nitride film while applying a positive potential to the source region, applying a negative potential to the memory gate, applying a positive potential to the select gate, and flowing a current from the drain region to the source region, thus improving the characteristics of a nonvolatile semiconductor memory device.

    摘要翻译： 在存储单元包括ONO膜的情况下，其包括用于电荷存储的氮化硅膜和位于氮化硅膜上方和下方的氧化膜; 在ONO电影上方的记忆门; 选择栅极，其经由ONO膜与存储栅的侧表面相邻; 位于选择门下方的栅极绝缘体; 源区; 和漏极区域，通过将BTBT产生的空穴注入氮化硅膜，同时向源极区域施加正电位，向存储栅极施加负电位，向选择栅极施加正电位，进行擦除操作，以及 使电流从漏极区域流向源极区域，从而改善非易失性半导体存储器件的特性。

    Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate
    10.
    发明授权
    Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate 有权
    非易失性半导体器件和制造具有侧壁栅极的嵌入式非易失性半导体存储器件的方法

    公开(公告)号：US07667259B2

    公开(公告)日：2010-02-23

    申请号：US11452256

    申请日：2006-06-14

    申请人： Kan Yasui ,  Digh Hisamoto ,  Tetsuya Ishimaru ,  Shin-Ichiro Kimura

    发明人： Kan Yasui ,  Digh Hisamoto ,  Tetsuya Ishimaru ,  Shin-Ichiro Kimura

    IPC分类号： H01L21/00

    CPC分类号： H01L27/115 ,  G11C16/0425 ,  H01L27/11568 ,  H01L29/42344

    摘要： A method of manufacturing a non-volatile semiconductor memory device is provided which overcomes a problem of penetration of implanted ions due to the difference of an optimal gate height in simultaneous formation of a self-align split gate type memory cell utilizing a side wall structure and a scaled MOS transistor. A select gate electrode to form a side wall in a memory area is formed to be higher than that of the gate electrode in a logic area so that the height of the side wall gate electrode of the self-align split gate memory cell is greater than that of the gate electrode in the logic area. Height reduction for the gate electrode is performed in the logic area before gate electrode formation.

    摘要翻译： 提供了一种制造非易失性半导体存储器件的方法，其克服了由于利用侧壁结构同时形成自对准分裂栅型存储单元而产生的最佳栅极高度的差异而引入的注入离子的问题，以及 一个缩放的MOS晶体管。 形成在存储区域中形成侧壁的选择栅电极比逻辑区域中的栅电极高，使得自对准分离栅极存储单元的侧壁栅电极的高度大于 在逻辑区域的栅电极。 栅极电极的高度降低在栅电极形成之前的逻辑区域中进行。