Positive resist composition and pattern forming method using the same
    3.
    发明授权
    Positive resist composition and pattern forming method using the same 有权
    正型抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07923196B2

    公开(公告)日:2011-04-12

    申请号:US12672329

    申请日:2008-08-01

    IPC分类号: G03F7/00 G03F7/004 G03F7/20

    摘要: A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R1 independently represents hydrogen or a methyl group, R2 represents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided.

    摘要翻译: 一种正型抗蚀剂组合物,其包含(A)含有由式(I)至(III)表示的所有重复单元的树脂,并且通过酸的作用变得可溶于碱性显影剂,和(B)能够 在用光化射线或辐射照射时产生酸; 以及使用该组合物的图案形成方法。 A表示能够通过酸的分解和离去的基团,每个R 1独立地表示氢或甲基,R 2表示苯基或环己基,m表示1或2,n表示0〜 通过这种结构,提供了确保高分辨率,良好的图案轮廓,足够的焦深,显影后的小缺陷以及足够高的耐等离子体耐蚀刻性的抗蚀剂组合物。

    POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME
    4.
    发明申请
    POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME 有权
    正极性组合物和使用其的图案形成方法

    公开(公告)号:US20100248146A1

    公开(公告)日:2010-09-30

    申请号:US12672329

    申请日:2008-08-01

    IPC分类号: G03F7/004 G03F7/20

    摘要: A positive resist composition comprising (A) a resin which contains all of the repeating units represented by formulae (I) to (III), and becomes soluble in an alkali developer by the action of an acid, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; and a pattern forming method using the composition. A represents a group capable of decomposing and leaving by the action of an acid, each R1 independently represents hydrogen or a methyl group, R2 represents a phenyl group or a cyclohexyl group, m represents 1 or 2, and n represents an integer of 0 to 2. By virtue of this construction, a resist composition ensuring high resolution, good pattern profile, sufficient depth of focus, little defects after development, and sufficiently high plasma etching resistance is provided.

    摘要翻译: 一种正型抗蚀剂组合物,其包含(A)含有由式(I)至(III)表示的所有重复单元的树脂,并且通过酸的作用变得可溶于碱性显影剂,和(B)能够 在用光化射线或辐射照射时产生酸; 以及使用该组合物的图案形成方法。 A表示能够通过酸的分解和离去的基团,每个R 1独立地表示氢或甲基,R 2表示苯基或环己基,m表示1或2,n表示0〜 通过这种结构,提供了确保高分辨率,良好的图案轮廓,足够的焦深,显影后的小缺陷以及足够高的耐等离子体耐蚀刻性的抗蚀剂组合物。

    Resist composition and pattern-forming method using the same
    5.
    发明授权
    Resist composition and pattern-forming method using the same 有权
    抗蚀剂组合物和使用其的图案形成方法

    公开(公告)号:US07989137B2

    公开(公告)日:2011-08-02

    申请号:US12238856

    申请日:2008-09-26

    IPC分类号: G03F7/039 G03F7/20 G03F7/30

    摘要: A resist composition includes (A) a resin including: a repeating unit capable of decomposing by the action of an acid to increase solubility in an alkali developing solution and represented by formula (I), and a repeating unit represented by formula (II); and (B) a compound capable of generating an acid upon irradiation with actinic ray or radiation: wherein A represents a hydrogen atom, an alkyl group, a hydroxyl group, an alkoxyl group, a halogen atom, a cyano group, a nitro group, an acyl group, an acyloxy group, a cycloalkyl group, an aryl group, a carboxyl group, an alkyloxycarbonyl group, an alkylcarbonyloxy group, or an aralkyl group; Ra represents a group containing a group capable of decomposing by the action of an acid; Rb represents an alkylene group, a cycloalkylene group, or a group of combining these groups; Y represents a heterocyclic group; and m represents 0 or 1.

    摘要翻译: 抗蚀剂组合物包括(A)树脂,其包含:能够通过酸的分解而分解的碱性显影液中的溶解度并由式(I)表示的重复单元和由式(II)表示的重复单元的重复单元; 和(B)能够在用光化射线或辐射照射时能够产生酸的化合物:其中A表示氢原子,烷基,羟基,烷氧基,卤素原子,氰基,硝基, 酰基,酰氧基,环烷基,芳基,羧基,烷氧基羰基,烷基羰基氧基或芳烷基; Ra表示含有能够通过酸的作用分解的基团的基团; Rb表示亚烷基,亚环烷基或组合这些基团的基团; Y表示杂环基; m表示0或1。