摘要:
A two-way CATV system having a substantial number of terminals incorporates a central processor and transmitter system which continually interrogates the terminals at high speed, monitoring changes of usage of premium programs and other data while also permitting central control of access to restricted premium programs. For inexpensive but reliable intercommunication, short, fixed word length digital messages are frequency multiplexed onto the cable in both upstream and downstream directions, and subscriber groups are controllably selected in turn, with each subscriber being scanned in what may be an arbitrary order by transmission of unique private messages which are recognized at the terminal and in response to which previously prepared fixed length messages are immediately transmitted in return. By employing both upstream and downstream messages which are initiated by a series of synchronizing bits and non-ambiguously related subsequent data sequences, and by the provision of means to initiate both downstream and upstream messages of short length without delay, rapid but reliable data interchange is effected despite differences in transmission and response times with different subscribers. Concurrently, terminal status and various special conditions including security alarms are remotely processed at each terminal, and short upstream messages are assembled containing priority selected data to be transmitted in response to an interrogation. The system incorporates additional means for monitoring power status, program selection and authorization and other operating conditions at each terminal effectively to provide accurate and reliable accounting information while preventing unauthorized or improper usage of restricted premium programs.
摘要:
The technique for manufacturing a high-capacitance and high-accuracy MIM electrostatic capacitor by a small number of steps is provided. After a lower electrode of the electrostatic capacitor and second wiring are formed at the same time on a first interlayer insulating film, an opening part is formed in a second interlayer insulating film deposited on the first interlayer insulating film. Next, a capacitance insulating film, a second metal film and a protective metal film are sequentially deposited on the second interlayer insulating film including the interior of the opening part, and the protective metal film, the second metal film and the capacitance insulating film on the second interlayer insulating film are polished and removed by a CMP method, thereby causing the capacitance insulating film, an upper electrode made of the second metal film and the protective metal film to remain in the opening part.
摘要:
A vehicular door sash includes a sash frame formed by subjecting a predetermined metal sheet to a roll molding process to have a predetermined cross section. The sash frame includes a groove portion for retaining a glass-run channel, a retainer portion for retaining a weather strip, a flange portion that connects the retainer portion and the groove portion and partially forms an outer surface of a door of a vehicle, and a sash molding configured to cover the flange portion. The flange portion has a first configuration in which the flange portion is not covered by the sash molding and a second configuration in which the flange portion is covered and compressed by the sash molding.
摘要:
Provided is a technology capable of reducing parasitic capacitance of a capacitor while reducing the space occupied by the capacitor. A stacked structure is obtained by forming, over a capacitor composed of a lower electrode, a capacitor insulating film and an intermediate electrode, another capacitor composed of the intermediate electrode, another capacitor insulating film and an upper electrode. Since the intermediate electrode has a step difference, each of the distance between the intermediate electrode and lower electrode and the distance between the intermediate electrode and upper electrode in a region other than the capacitor formation region becomes greater than that in the capacitor formation region. For example, the lower electrode is brought into direct contact with the capacitor insulating film in the capacitor formation region, while the lower electrode is not brought into direct contact with the capacitor insulating film in the region other than the capacitor formation region.
摘要:
A silicon oxide film on which a capacitor of a semiconductor integrated circuit device is formed is formed by the plasma CVD method at a temperature of 450° C. to 700° C. In this semiconductor integrated circuit device, a memory cell formed of a MISFET for data transfer and a capacitor is formed in a memory cell forming area, and an n channel MISFET and a p channel MISFET constituting a logic circuit is formed in a logic circuit forming area. As a result, the amount of degassing from the silicon oxide film can be reduced. Therefore, the growth of silicon grains on a surface of the silicon film constituting a lower electrode of the capacitor is not hindered by the degassing, and it becomes possible to increase the capacitance. Also, the step of a heat treatment for removing the moisture and the like after forming the silicon oxide film can be omitted, and it becomes possible to prevent the deterioration of the property of the MISFET.
摘要:
A child seat is formed of a child seat main portion for holding a child having an engaging member, and a base on which the child seat main portion is detachably mounted. The base has a connecting portion to be connected to a vehicle, and a fixing member to be engageable with the engaging member of the child seat main portion. An engagement releasing member is installed in the base or the child seat main portion for releasing an engagement between the fixing member and the engaging member. Since the base can be connected to the vehicle without the child seat main portion, the child seat can be extremely simply fixed to the vehicle.
摘要:
The present invention relates to a method of producing a cellulose-fiber flat structure, the method including obtaining a cellulose-fiber flat structure by filtering a fine cellulose-fiber dispersion containing fine cellulose fibers having an average fiber diameter of 4 to 100 nm, using a filter material having a water permeability of not more than 100 ml/m2·s and an initial tensile modulus of 20 MPa or greater. The present invention is able to produce a cellulose-fiber flat structure by efficiently recovering fine cellulose fibers from a dispersion containing fine cellulose fibers having an average fiber diameter at the nano level. The method of producing a cellulose-fiber flat structure can also be applied to a continuous process.
摘要翻译:纤维素纤维扁平结构体的制造方法技术领域本发明涉及纤维素纤维平坦结构体的制造方法,其特征在于,使用平均纤维直径为4〜100nm的细纤维素纤维的细纤维素纤维分散体, 透水度不大于100ml / m 2·s,初始拉伸弹性模量为20MPa以上的过滤材料。 本发明能够通过从包含平均纤维直径在纳米级的细纤维素纤维的分散体中有效地回收细纤维素纤维而制造纤维素纤维平坦结构。 纤维素纤维平坦结构的制造方法也可以应用于连续工序。
摘要:
In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films of other metallic interconnect layers. Moreover, in this invention, the film thickness of the upper barrier film of the lower electrode of the capacitive element is controlled to be 110 nm or more, more preferably, 160 nm or more. A decrease in the dielectric voltage of the capacitive dielectric film due to cracks in the upper barrier film does not occur and the deposition temperature of the capacitive dielectric film can be made higher, so that a semiconductor device having a MIM capacitor with high performance and high capacitance can be achieved, where the dielectric voltage of the capacitive dielectric film is improved.
摘要:
An MIM capacitor using a high-permittivity dielectric film such as tantalum oxide. The MIM capacitor includes an upper electrode, a dielectric film, and a lower electrode. A second dielectric film and the dielectric film are formed between the upper electrode and the lower electrode, at the end of the MIM capacitor. The second dielectric film is formed to have an opening at the top of the lower electrode. The dielectric film abuts the lower electrode via the opening. The upper electrode is formed on the dielectric film. The upper electrode and the dielectric film are formed in such a manner as to embrace the opening entirely, and the second dielectric film and the lower electrode are formed so that the respective widths are the same as, or greater than, the widths of the upper electrode and the dielectric film.
摘要:
Purine nucleotide derivative disodium crystals having a minimized amount of remaining alcohol such as methanol, ethanol or a mixture thereof are produced by overdrying purine nucleotide derivative disodium crystals containing the alcohol; and bringing the overdried purine nucleotide derivative disodium crystals into contact with an aqueous solution containing a hydrophilic organic solvent to control the humidity of the purine nucleotide derivative disodium crystals under a high humidity condition.