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    Light emitting device, with light guide member having smaller exit section, and illuminating device, and vehicle headlight including the same
    2.
    发明授权
    Light emitting device, with light guide member having smaller exit section, and illuminating device, and vehicle headlight including the same 有权
    具有较小出口部分的导光部件和照明装置的发光装置以及包括该发光装置的车辆头灯

    公开(公告)号：US08833991B2

    公开(公告)日：2014-09-16

    申请号：US13023300

    申请日：2011-02-08

    申请人： Katsuhiko Kishimoto ,  Koji Takahashi ,  Shigetoshi Ito ,  Hidenori Kawanishi

    发明人： Katsuhiko Kishimoto ,  Koji Takahashi ,  Shigetoshi Ito ,  Hidenori Kawanishi

    IPC分类号： B60Q1/04 ,  F21V8/00

    CPC分类号： G02B6/0008 ,  F21S41/143 ,  F21S41/16 ,  F21S41/24

    摘要： A light emitting device of the present invention includes: a laser diode group which generates a plurality of laser beams; a cylindrical light emitting element which emits incoherent light in response to the plurality of laser beams; and a light guide irradiation section which (i) guides the plurality of laser beams entered via a light incidence plane toward a light irradiation plane and (ii) irradiates the light irradiation area of the cylindrical light emitting element with the plurality of laser beams thus guided. The light irradiation plane of the light guide irradiation section has an area which is smaller than that of the light incidence plane.

    摘要翻译： 本发明的发光器件包括：产生多个激光束的激光二极管组; 响应于所述多个激光束发射非相干光的圆柱形发光元件; 以及导光照射部，其将通过光入射面进入的多个激光束引导向光照射面，并且（ii）用这样引导的多个激光束照射圆筒形发光元件的光照射区域 。 光导照射部的光照射面的面积比光入射面的面积小。

    LIGHT EMITTING DEVICE, ILLUMINATING DEVICE, AND VEHICLE HEADLIGHT
    3.
    发明申请
    LIGHT EMITTING DEVICE, ILLUMINATING DEVICE, AND VEHICLE HEADLIGHT 有权
    发光装置，照明装置和车辆头灯

    公开(公告)号：US20110194302A1

    公开(公告)日：2011-08-11

    申请号：US13023300

    申请日：2011-02-08

    申请人： Katsuhiko Kishimoto ,  Koji Takahashi ,  Shigetoshi Ito ,  Hidenori Kawanishi

    发明人： Katsuhiko Kishimoto ,  Koji Takahashi ,  Shigetoshi Ito ,  Hidenori Kawanishi

    IPC分类号： B60Q1/04 ,  F21V8/00

    CPC分类号： G02B6/0008 ,  F21S41/143 ,  F21S41/16 ,  F21S41/24

    摘要： A light emitting device of the present invention includes: a laser diode group which generates a plurality of laser beams; a cylindrical light emitting element which emits incoherent light in response to the plurality of laser beams; and a light guide irradiation section which (i) guides the plurality of laser beams entered via a light incidence plane toward a light irradiation plane and (ii) irradiates the light irradiation area of the cylindrical light emitting element with the plurality of laser beams thus guided. The light irradiation plane of the light guide irradiation section has an area which is smaller than that of the light incidence plane.

    摘要翻译： 本发明的发光器件包括：产生多个激光束的激光二极管组; 响应于所述多个激光束发射非相干光的圆柱形发光元件; 以及导光照射部，其将通过光入射面进入的多个激光束引导向光照射面，并且（ii）用这样引导的多个激光束照射圆筒形发光元件的光照射区域 。 光导照射部的光照射面的面积比光入射面的面积小。

    LIGHT EMITTING DEVICE, VEHICLE HEADLAMP, ILLUMINATION DEVICE, AND VEHICLE
    5.
    发明申请
    LIGHT EMITTING DEVICE, VEHICLE HEADLAMP, ILLUMINATION DEVICE, AND VEHICLE 有权
    发光装置，车辆头灯，照明装置和车辆

    公开(公告)号：US20120140504A1

    公开(公告)日：2012-06-07

    申请号：US13297008

    申请日：2011-11-15

    申请人： Yasuo Fukai ,  Yoshiyuki Takahira ,  Koji Takahashi ,  Yosuke Maemura ,  Yoshitaka Tomomura

    发明人： Yasuo Fukai ,  Yoshiyuki Takahira ,  Koji Takahashi ,  Yosuke Maemura ,  Yoshitaka Tomomura

    IPC分类号： B60Q1/04 ,  F21V29/00 ,  F21V9/16

    CPC分类号： F21V9/16 ,  F21S41/14 ,  F21S41/16 ,  F21S45/47 ,  F21V9/30

    摘要： A headlamp 1 includes (i) a laser element 2 for emitting a laser beam, (ii) a light emitting section 4, including a sealing material made from an inorganic material, for emitting fluorescence upon receiving the laser beam emitted from the laser element 2, and (iii) a heat sink 7 for releasing, via a contact surface of the heat sink 7 which contact surface is in contact with the light emitting section 4, heat generated in the light emitting section 4 in response to the laser beam emitted onto the light emitting section 4, the light emitting section 4 existing within a range which is determined on the basis of the contact surface and with which desired heat releasing efficiency is obtained.

    摘要翻译： 前照灯1包括（i）用于发射激光束的激光元件2，（ii）包含由无机材料制成的密封材料的发光部4，用于在接收从激光元件2发射的激光束时发射荧光 ，和（iii）散热器7，用于经由与发光部分4接触的散热器7的接触表面释放在发光部分4中产生的热量，响应于发射到发光部分4上的激光束 发光部分4，发光部分4存在于基于接触表面确定并获得所需放热效率的范围内。

    Method for forming compound semiconductor layer and compound semiconductor apparatus
    6.
    发明授权
    Method for forming compound semiconductor layer and compound semiconductor apparatus 失效
    形成化合物半导体层的方法和化合物半导体装置

    公开(公告)号：US06821806B1

    公开(公告)日：2004-11-23

    申请号：US09786977

    申请日：2001-06-07

    申请人： Koji Takahashi ,  Hidenori Kawanishi

    发明人： Koji Takahashi ,  Hidenori Kawanishi

    IPC分类号： H01L2100

    CPC分类号： H01L33/32 ,  C30B25/02 ,  C30B29/40 ,  C30B29/403 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0075 ,  H01S5/32366

    摘要： Includes the step of crystal-growing a group III-V compound semiconductor layer containing at least nitrogen and arsenic as group V elements on a single crystal substrate. The step of crystal-growing the compound semiconductor layer includes the stop of supplying a nitrogen source material to the single crystal substrate so that the nitrogen source material interacts with aluminum at least on a crystal growth surface of the compound semiconductor layer. Thus, a method is provided for forming a group III-V compound semiconductor layer containing a group III-V compound semiconductor containing arsenic as a group V element and also containing nitrogen mix-crystallized therewith, which has superb light emission characteristics.

    摘要翻译： 包括在单晶衬底上晶体生长至少含有氮和砷作为V族元素的III-V族化合物半导体层的步骤。 晶体生长化合物半导体层的步骤包括停止向单晶衬底供应氮源材料，使得氮源材料至少在化合物半导体层的晶体生长表面上与铝相互作用。 因此，提供了一种形成含有具有优异的发光特性的含有作为V族元素的砷的III-V族化合物半导体并且还含有与其混合结晶的氮的III-V族化合物半导体层的方法。

    Method of growing group III or group III-V nitride layer
    7.
    发明授权
    Method of growing group III or group III-V nitride layer 失效
    生长III或III-V族氮化物层的方法

    公开(公告)号：US06303473B1

    公开(公告)日：2001-10-16

    申请号：US09212532

    申请日：1998-12-16

    申请人： Jonathan Heffernan ,  Koji Takahashi ,  Hidenori Kawanishi

    发明人： Jonathan Heffernan ,  Koji Takahashi ,  Hidenori Kawanishi

    IPC分类号： H01L2120

    CPC分类号： H01L33/0075 ,  H01L33/007 ,  H01S5/0206 ,  H01S5/3201 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/02

    摘要： A method of growing a Group III or Group III-V nitride layer on a semiconductor substrate includes the steps of: locating, within a chamber, the semiconductor substrate having on its surface a Group III-V semiconductor layer incorporating a substance which is strongly reactive with nitrogen; and subsequently effecting nitridation of the Group III-V semiconductor layer by introducing a species containing nitrogen into the chamber to cause a reaction between the nitrogen and the substance.

    摘要翻译： 在半导体衬底上生长III族或III-V族氮化物层的方法包括以下步骤：在室内定位半导体衬底，该衬底在其表面上具有掺入强反应性物质的III-V族半导体层 用氮气; 然后通过将含有氮的物质引入室中以引起氮与物质之间的反应，进行III-V族半导体层的氮化。