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1.发明授权II-VI group compound semiconductor device and method for manufacturing the same 失效II-VI族化合物半导体器件及其制造方法
公开(公告)号：US5786269A
公开(公告)日：1998-07-28
申请号：US719263
申请日：1996-09-24
IPC分类号： H01L29/43 , H01L21/28 , H01L21/4763 , H01L29/221 , H01L29/45 , H01L33/28 , H01L33/30 , H01L33/38 , H01L33/40 , H01S5/00 , H01S5/042 , H01S5/30 , H01S5/327
CPC分类号： H01L33/40 , H01L21/4763 , H01L29/221 , H01L29/45 , H01S5/0421 , H01S5/327 , H01L33/28 , H01S2304/02 , H01S5/0425 , H01S5/3059
摘要： A II-VI group compound semiconductor device having a p-type Zn.sub.x Mg.sub.1-x S.sub.y Se.sub.1-y (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1) semiconductor layer, on which an electrode layer is formed with at least metallic nitride layer lying between the semiconductor layer and the electrode layer.
摘要翻译： 具有p型ZnxMg1-xSySe1-y（0≤x≤1,0≤y≤1）半导体层的II-VI族化合物半导体器件，其上形成有电极层， 至少金属氮化物层位于半导体层和电极层之间。
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公开(公告)号：US5616937A
公开(公告)日：1997-04-01
申请号：US737706
申请日：1991-07-30
IPC分类号： H01L21/203 , H01L21/36 , H01L33/00 , H01L33/14 , H01L33/28 , H01L33/42 , H01L33/44 , H01S5/327 , H05B33/12 , H05B33/14
CPC分类号： H01L33/44 , H01L33/0037 , H01L33/28 , H01L33/285 , H01S5/327 , H05B33/12 , H05B33/145 , H01L33/14
摘要： A compound semiconductor luminescent device is disclosed which comprises a semiconductor substrate and a multi-layered structure disposed on the substrate, the multi-layered structure comprising at least one conductive layer, a luminescent layer, and a current injection layer, wherein the substrate and the layers are made of at least one kind of II-VI group compound semiconductor.
摘要翻译： 公开了一种化合物半导体发光装置，其包括半导体衬底和设置在衬底上的多层结构，所述多层结构包括至少一个导电层，发光层和电流注入层，其中衬底和 层由至少一种II-VI族化合物半导体制成。
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3.发明授权Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device 失效II-VI族化合物半导体薄膜和II-VI族化合物半导体器件的制造方法
公开(公告)号：US5508522A
公开(公告)日：1996-04-16
申请号：US169299
申请日：1993-12-17
IPC分类号： H01L21/363 , H01L33/04 , H01L33/14 , H01L33/16 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/40 , H01L33/62 , H01S5/00 , H01S5/32 , H01S5/327 , H01L29/06
CPC分类号： H01L33/28 , H01L21/02395 , H01L21/02406 , H01L21/02433 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02631 , H01L33/16 , H01S5/327 , H01S5/3202
摘要： A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.
摘要翻译： 公开了半导体薄膜的制造方法。 该方法包括在单晶半导体衬底的主平面上外延生长由II-VI族化合物半导体制成的半导体层以具有至少一个原子层以上的厚度的步骤，该半导体衬底具有一个 的金刚石结构和闪锌矿结构，所述主平面相对于（100）面倾斜2至16度的范围内的角度。
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4.发明授权
公开(公告)号：US5187116A
公开(公告)日：1993-02-16
申请号：US547077
申请日：1990-07-03
IPC分类号： H01L21/203 , H01L21/28 , H01L21/285 , H01L33/14 , H01L33/28 , H01L33/40
CPC分类号： H01L33/40 , H01L33/005 , H01L33/0062 , H01L33/0083 , H01L33/145 , H01L33/285 , H01L33/38 , H01L33/08
摘要： A process for preparing an electroluminescent device of a compound semiconductor comprising a step (A) of epitaxially forming over a semiconductor substrate an electroconductive layer of a compound semiconductor and an electroluminescent layer of a p-n junction type compound semiconductor placed over the electroconductive layer and a step (B) of forming a pair of ohmic electrodes as electrically connected to each of said layers, both of the steps (A) and (B) being performed by using molecular beam growth under the irradiation with a light beam.
摘要翻译： 一种制备化合物半导体的电致发光器件的方法，包括在半导体衬底上外延形成化学半导体的导电层和置于导电层上的pn结型化合物半导体的电致发光层的步骤（A）和步骤 （B）形成一对欧姆电极，电连接到每个所述层，两个步骤（A）和（B）都是通过在光束照射下使用分子束生长进行的。
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公开(公告)号：US09625121B2
公开(公告)日：2017-04-18
申请号：US13297008
申请日：2011-11-15
摘要： A headlamp 1 includes (i) a laser element 2 for emitting a laser beam, (ii) a light emitting section 4, including a sealing material made from an inorganic material, for emitting fluorescence upon receiving the laser beam emitted from the laser element 2, and (iii) a heat sink 7 for releasing, via a contact surface of the heat sink 7 which contact surface is in contact with the light emitting section 4, heat generated in the light emitting section 4 in response to the laser beam emitted onto the light emitting section 4, the light emitting section 4 existing within a range which is determined on the basis of the contact surface and with which desired heat releasing efficiency is obtained.
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公开(公告)号：US5767536A
公开(公告)日：1998-06-16
申请号：US756192
申请日：1996-11-25
IPC分类号： H01L21/28 , H01L21/363 , H01L21/40 , H01L21/44 , H01L21/443 , H01L29/221 , H01L29/45 , H01L29/47 , H01L33/28 , H01L33/40 , H01S5/00 , H01L33/00
CPC分类号： H01L33/40 , H01L21/40 , H01L21/44 , H01L21/443 , H01L29/221 , H01L29/45 , H01L29/47 , H01L33/28
摘要： A II-VI group compound semiconductor device comprising a Zn.sub.X Mg.sub.1-X S.sub.Y Se.sub.1-Y (0.ltoreq.X.ltoreq.1, 0.ltoreq.Y.ltoreq.1) semiconductor layer, an intermediate layer comprising a compound of an element constituting the semiconductor layer and an additive element of Cd, Te or Hg formed on the semiconductor layer, and an electrode layer containing Ni, Pt or Pd formed on the intermediate layer.
摘要翻译： 包含ZnXMg1-XSYSe1-Y（0≤x≤1,0≤Y≤1）半导体层的II-VI族化合物半导体器件，包含构成该化合物的元素的化合物的中间层 半导体层和形成在半导体层上的Cd，Te或Hg的添加元素，以及形成在中间层上的含有Ni，Pt或Pd的电极层。
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公开(公告)号：US5554877A
公开(公告)日：1996-09-10
申请号：US938536
申请日：1992-09-02
IPC分类号： H01L27/15 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/40 , H01L33/62 , H01C29/78
CPC分类号： H01L27/156 , H01L24/49 , H01L33/0079 , H01L33/40 , H01L2224/45144 , H01L2224/48463 , H01L2224/4918 , H01L24/45 , H01L2924/01029 , H01L2924/12041 , H01L33/28 , H01L33/62
摘要： An electroluminescent device of compound semiconductor includes a compound semiconductor substrate having at least one through-hole, an electroluminescent part consisting of a plurality of epitaxial compound semiconductor layers formed on the substrate, and at least a pair of electrodes having external leads in which one electrode is connected to the uppermost layer of the electroluminescent part and another electrode is directly connected to the lowest layer of the electroluminescent part through the through-hole of the substrate. Thereby, a voltage from an external source is enabled to be directly applied to the electroluminescent part.
摘要翻译： 化合物半导体的电致发光器件包括具有至少一个通孔的化合物半导体衬底，由形成在衬底上的多个外延化合物半导体层组成的电致发光部分和至少一对具有外部引线的电极，其中一个电极 连接到电致发光部分的最上层，另一个电极通过基板的通孔直接连接到电致发光部分的最下层。 由此，能够将来自外部源的电压直接施加到电致发光部。
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公开(公告)号：US5057183A
公开(公告)日：1991-10-15
申请号：US446114
申请日：1989-12-05
IPC分类号： C30B23/08 , C30B29/48 , H01L21/203 , H01L21/363 , H01L29/22 , H01L31/18
CPC分类号： H01L33/0083 , H01L21/02406 , H01L21/02433 , H01L21/02474 , H01L21/02477 , H01L21/02507 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02573 , H01L21/02631 , H01L29/22 , H01L31/1828 , H01L31/1832 , Y02E10/543
摘要： An improved process for the production of an epitaxial II-VI compound semiconductor containing sulfur as the VI element by molecular beam epitaxy employing a sulfur molecular beam and a II element molecular beam in which the sulfur molecular beam is provided from solid sulfur through a specific two-step heating.
摘要翻译： 通过使用硫分子束和II元素分子束通过分子束外延生产含有硫作为VI元素的外延II-VI化合物半导体的改进方法，其中硫分子束由固体硫通过特定的两个 - 步骤加热。
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公开(公告)号：US5055363A
公开(公告)日：1991-10-08
申请号：US382239
申请日：1989-07-19
IPC分类号： H05B33/10 , G09F13/22 , H01L21/203 , H01L21/363 , H01L27/15 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/38 , H01L33/40 , H01L33/42 , H01S5/00 , H01S5/327 , H05B33/12 , H05B33/14
CPC分类号： H01L33/145 , G09F13/22 , G09F2013/222 , H01L2224/48463 , H01L2224/49107 , H01L2224/4918 , H01L27/156 , H01L33/0037 , H01L33/285 , Y10S428/901 , Y10S428/917
摘要： The present invention provides an electroluminescent device of a Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.
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公开(公告)号：US5037709A
公开(公告)日：1991-08-06
申请号：US382238
申请日：1989-07-19
IPC分类号： H05B33/10 , G09F13/22 , H01L21/203 , H01L21/363 , H01L27/15 , H01L33/00 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/38 , H01L33/40 , H01L33/42 , H01S5/00 , H01S5/327 , H05B33/12 , H05B33/14
CPC分类号： H01L33/145 , G09F13/22 , G09F2013/222 , H01L2224/48463 , H01L2224/49107 , H01L2224/4918 , H01L27/156 , H01L33/0037 , H01L33/285 , Y10S428/901 , Y10S428/917
摘要： The present invention provides an electroluminescent device of Group II-VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.
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