摘要:
The present invention provides a surface acoustic wave device comprising a diamond, having operating frequencies in the range of several hundreds of MHz to several tens of GHz, and being capable of operating at high frequencies.The surface acoustic wave device of the present invention comprises a diamond layer or a substrate layer and a diamond layer, a ZnO piezoelectric layer, interdigital transducers and a short-circuit electrode layer, being characterized in that (2π·H/λM) is in the range of 3.0 to 10.0 where the thickness of the ZnO layer is H and the wavelength of the surface acoustic wave is λM.
摘要翻译:本发明提供一种表面声波装置,其包括金刚石,其工作频率在几百MHz至几十GHz的范围内,并且能够在高频下操作。 本发明的声表面波器件包括金刚石层或基底层和金刚石层,ZnO压电层,叉指式换能器和短路电极层,其特征在于(2pi.H /λ< M 3)在3.0至10.0的范围内,其中ZnO层的厚度为H,声表面波的波长为λM。
摘要:
A surface acoustic wave (SAW) device is provided that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=5·2&pgr;·(tz/&lgr;) and kh2=5·2&pgr;(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second mode of the SAW. The SAW device uses the fifth harmonic of the second mode of the SAW.
摘要:
A surface acoustic wave (SAW) device that is suitable for mass production and that has excellent operational performance at the superhigh-frequency range. The SAW device comprises (a) a diamond layer 3; (b) a ZnO layer 4, with a thickness of tz, formed on the diamond layer 3; (c) interdigital transducers (IDTs) 5, which excite and receive a SAW, formed on the ZnO layer 4; and (d) an SiO2 layer 6, with a thickness of ts, formed on the ZnO layer 4 so that the SiO2 layer can cover the IDTs 5. The structure of the SAW device is determined by specific numeric ranges of the parameters kh1 and kh2, which are given in equations kh1=3·2&pgr;·(tz/&lgr;) and kh2=3·2&pgr;·(ts/&lgr;), where &lgr; signifies the wavelength of the fundamental wave of the second Sezawa mode of the SAW. The SAW device uses the third harmonic of the second Sezawa mode of the SAW excited.
摘要:
A surface acoustic wave (SAW) device that is made with diamond, that has high efficiency, and that can be operated at high frequencies, particularly from 9.5 to 10.5 GHz. The SAW device comprises a diamond layer formed singly or formed on a substrate, a ZnO piezoelectric layer, interdigital transducers (IDTs), and a short-circuiting electrode as required. The SAW device has a structure in which the thickness of the ZnO layer, the wavelength of a harmonic of the SAW, and the line width of the IDTs fall in a specified range. With this structure, a large electromechanical coupling coefficient is obtained in a high-frequency range of 10 GHz band by utilizing the third or fifth harmonic of the SAW.
摘要:
The solder film manufacturing method has a step for laminating a plurality of unit layers, each unit layer formed by laminating a plurality of layers including layers of only Zn, Bi or Sn, or layers of alloys of two of the metals Zn, Bi and Sn. This manufacturing method also preferably also has a step for forming an Sn layer as the top surface layer. A heat sink has a solder film manufactured by this process. A solder junction connects a semiconductor device characterized by having a semiconductor element mounted on this heat sink with a heat sink having this solder film.
摘要:
A method for separating chips from a diamond wafer comprising a substrate, a chemically vapor-deposited diamond layer, and microelectronic elements, with the microelectronic elements protected from thermal damage and degradation caused by the thermally decomposed cuttings produced during the processing steps. (1) Front-side grooves 6 are formed on the chemically vapor-deposited diamond layer 2 by laser processing using a laser such as a YAG, CO2, or excimer laser each having a large output so that the grooves 6 can have a depth 1/100 to 1.5 times the thickness of the diamond layer. (2) The thermally decomposed cuttings produced during the laser processing are removed by using a plasma. (3) Back-side grooves 9 are formed on the substrate 1 by dicing such that the back-side grooves 9 are in alignment with the front-side grooves 6. (4) The diamond wafer 4 is divided into individual chips 10 by applying mechanical stresses.
摘要:
The solder film manufacturing method has a step for laminating a plurality of unit layers, each unit layer formed by laminating a plurality of layers including layers of only Zn, Bi or Sn, or layers of alloys of two of the metals Zn, Bi and Sn. This manufacturing method also preferably also has a step for forming an Sn layer as the top surface layer. A heat sink has a solder film manufactured by this process. A solder junction connects a semiconductor device characterized by having a semiconductor element mounted on this heat sink with a heat sink having this solder film.
摘要:
A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, a support member for supporting the chuck top, and a stand for supporting the support member. The chuck top has a thermal conductivity K1 and a Young's modulus Y1; the support member has a thermal conductivity K2 and a Young's modulus Y2; and the stand has a thermal conductivity K3 and a Young's modulus Y3. K1>K2 and K1>K3; and Y3>Y1 and Y3>Y2.
摘要:
It is an object of the present invention to provide a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith.A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top, wherein, a restricting member is provided that covers an interface between the chuck top and the support member. By covering the gap between the chuck top and the support member with the restricting member, the heat insulating effect can be increased by preventing the flow of outside air through the gap into the support member, and the cooling rate can be particularly improved if cooling to a temperature below room temperature.
摘要:
A wafer holding body for placing a semiconductor wafer, a method of manufacturing the same, and an device using the wafer holding body are provided, wherein a channel is formed in the wafer holding body.