摘要:
An object of the invention is to provide an optical integrated circuit substrate capable of establishing optical connection between an optical waveguide and a semiconductor light-receiving element with high light-receiving efficiency and of achieving low-loss light transmission. In the optical integrated circuit substrate, on a substrate is formed an optical waveguide having a clad and a core layer. Embedded in the optical waveguide are a metal placement portion for an optical element and a thin-film optical element placed thereon. Distance between the thin-film optical element and the core layer is reduced. In a region free of the thin-film optical element, there is an adequate distance between the core layer and the substrate. This allows satisfactory optical connection between the thin-film optical element and the optical waveguide. In the thin-film optical element-free region, low-loss light transmission is achieved without interaction between transmitted light and the substrate.
摘要:
A prior-art electronic circuit component comprising an insulating film and a circuit conductive layer made of a superconducting metal suffers low reliability resulting from insufficient adhesion between these layers. An electronic circuit component of the invention comprises an insulating film made of a high polymer material having a dielectric constant of 2.5 or less, a base metal layer formed of copper on the insulating film, having a thickness of 0.01 to 0.3 .mu.m, and a circuit conductive layer formed of at least one of niobium and niobium nitride on the base metal layer. The electronic circuit component of the invention can accomplish an increased adhesion between the insulating film and the circuit conductive layer. Furthermore, by sequentially forming, on the circuit conductive layer, a conductive-layer coating metal layer made of at least one of aluminum and copper, the insulating film, the base metal layer and the circuit conductive layer, there can be obtained a multi-layered circuit substrate with a superconducting circuit of high density and high-level function.
摘要:
An object of the invention is to provide a method of producing an optical waveguide comprising a siloxane-containing polymer film, capable of controlling a refractive index easily and finely, and an optoelectronic hybrid substrate using the optical waveguide, capable of controlling a refractive index easily and finely, and reducing the effect of the surface roughness of the substrate. In particular, it relates to a method of producing an optical waveguide comprising a siloxane-containing polymer film containing a metal obtained by the thermal polymerization of a siloxane-containing polymer film formation solution added with a metal alkoxide on a substrate, and an optoelectronic hybrid substrate comprising a combination of an optical waveguide produced as mentioned above, a photoelectric element and an electric circuit on a ceramic substrate.
摘要:
An optical module comprising: an optical element flip-chip mounted on a substrate; an optical waveguide formed on the substrate and optically connected to the optical element; and underfill resin filled in between the substrate and the optical element and covering an optical junction between the optical element and the optical waveguide, wherein the underfill resin is of an electrically insulating material and has a refractive index equal to or smaller than a refractive index of a clad portion of the optical waveguide. The optical element can be flip-chip mounted with improved mechanical and electrical mounting reliability and thus satisfactory optical connection can be maintained. Further, it never occurs that light passing through the optical waveguide leaks to the underfill resin in the optical junction between the optical waveguide and the optical element.
摘要:
An optical waveguide is provided, which comprises a core part formed of optical material whose refractive index is varied corresponding to the irradiation amount of light having energy higher than that of light to be transmitted, and a cladding part formed of the optical material, but having a smaller refractive index than that of the core part by irradiation with the light having higher energy, which covers at least part of an outer periphery of the core part in the direction of the transmission of light. The optical waveguide is produced by a production process comprising a step of forming a layer of the optical material whose refractive index is varied corresponding to the irradiation amount of light having higher energy on a substrate, and a step of irradiating region is to be a core part and a cladding part, with different irradiation amounts of light, to form the core part and the cladding part having a smaller refractive index than that of the core part, which covers at least part of the outer periphery of the core part in the direction of transmission of light. The optical waveguide can be produced by the easy process with high productivity and high processing accuracy.
摘要:
An object of the invention is to provide a method of producing an optical waveguide comprising a siloxane-containing polymer film, capable of controlling a refractive index easily and finely, and an optoelectronic hybrid substrate using the optical waveguide, capable of controlling a refractive index easily and finely, and reducing the effect of the surface roughness of the substrate. In particular, it relates to a method of producing an optical waveguide comprising a siloxane-containing polymer film containing a metal obtained by the thermal polymerization of a siloxane-containing polymer film formation solution added with a metal alkoxide on a substrate, and an optoelectronic hybrid substrate comprising a combination of an optical waveguide produced as mentioned above, a photoelectric element and an electric circuit on a ceramic substrate.
摘要:
A circuit sub-assembly as a mounting for an electronic component such as Josephson device, i.e., a superconducting element, comprises a ceramic insulating substrate, an oxygen-shielding barrier layer formed on the insulating substrate, and a circuit film of niobium, as a superconducting material formed on the barrier layer according to a desired pattern. The barrier layer prevents oxidation of the circuit layer by shielding it from oxygen present in the insulating substrate. Due to the barrier layer, the circuit film is scarcely subject to superconductivity-impairing oxidation. The circuit film is thus capable of high-speed electronic signal conduction.
摘要:
There is disclosed a wiring board comprising a core substrate 110, a build-up layer 130a formed on at least one side of main surfaces the core substrate, wherein a cavity 120 for accommodating a chip-type decoupling capacitor 121 is formed in the build-up layer 130a. The capacitor 121 includes electrode terminals on an upper surface thereof that are directly connected to a semiconductor component, and electrode terminals on a back surface of the capacitor 121 is connected to a wiring conductor layer 132a on a bottom surface of the cavity 120. This structure enables decoupling capacitor and the semiconductor component 260 to be connected with low resistance and low inductance.
摘要:
A thermally dissipative IC package which can accommodate large discrete capacitors. The package substrate incorporates a recessed region on one of its surfaces which is separate from the region in which the IC device is placed. Inside this recessed region is placed a discrete capacitor such that the entire capacitor resides below the surface of the substrate within the recessed region. Finally, a metal plate is attached to the surface of the substrate, unencumbered by the discrete capacitor.
摘要:
There is disclosed a wiringboard comprising a core substrate 110, a build-up layer 130a formed on at least one side of main surfaces the core substrate, wherein a cavity 120 for accommodating a chip-type decoupling capacitor 121 is formed in the build-up layer 130a. The capacitor 121 includes electrode terminals on an upper surface thereof that are directly connected to a semiconductor component, and electrode terminals on a back surface of the capacitor 121 is connected to a wiring conductor layer 132a on a bottom surface of the cavity 120. This structure enables decoupling capacitor and the semiconductor component 260 to be connected with low resistance and low inductance.