Method of driving image display apparatus
    2.
    发明授权
    Method of driving image display apparatus 失效
    驱动图像显示装置的方法

    公开(公告)号:US5579027A

    公开(公告)日:1996-11-26

    申请号:US614321

    申请日:1996-03-12

    IPC分类号: G09G3/20 G09G3/36

    摘要: An image display apparatus, having a pixel configuration in which pixels on the n-th line and pixels on the n+1-th line are deviated in the horizontal direction, improves the resolution in the horizontal direction by changing over an image signal to be sampled between a delay signal DL and a through signal TH supplied from a delay circuit so as to deviate the image signal by a time corresponding to the deviation of the pixels. By sampling the image signal which corresponds to each line while deviating the image signal by the time which corresponds to the deviation of the pixels in the horizontal direction, the deviation between the pixel and the signal is eliminated, so that the resolution in the horizontal direction is improved.

    摘要翻译: 具有像素结构的图像显示装置,其中第n行上的像素和第n + 1行上的像素在水平方向上偏离,通过将图像信号转换为水平方向来提高分辨率 在从延迟电路提供的延迟信号DL和通过信号TH之间采样,以将图像信号偏离与像素的偏差相对应的时间。 通过对与每行对应的图像信号进行采样,同时使图像信号偏移对应于水平方向上的像素的偏差的时间,消除了像素和信号之间的偏差,使得在水平方向上的分辨率 改进了

    Image capture device having amplification circuit for amplifying signal from photoelectric conversion portion
    4.
    发明授权
    Image capture device having amplification circuit for amplifying signal from photoelectric conversion portion 有权
    具有用于放大来自光电转换部分的信号的放大电路的图像捕获器

    公开(公告)号:US08462242B2

    公开(公告)日:2013-06-11

    申请号:US13004771

    申请日:2011-01-11

    CPC分类号: H04N5/378 H04N5/361

    摘要: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier. The image capture device further includes a plurality of third capacitor elements configured to hold signals from the differential amplifiers of the plurality of processing circuits and to limit an output frequency band of each differential amplifier, and a horizontal output line for sequentially outputting signals from the plurality of third capacitor elements.

    摘要翻译: 图像捕获装置包括用于捕获对象图像的多个图像捕获元件,用于从多个图像捕获元件中读取信号的多个垂直输出线以及多个处理电路。 每个处理电路包括第一电容器元件,其具有连接到所述多个垂直输出线之一的第一电极,差分放大器,具有连接到所述第一电容器元件的第二电极的第一输入端子,连接在所述第一电容器元件之间的第二电容器元件 输入端子和差分放大器的输出端子,以及被配置为控制差分放大器的第一输入端子和输出端子之间的导通的第一开关。 图像捕获装置还包括多个第三电容器元件,其被配置为保持来自多个处理电路的差分放大器的信号并限制每个差分放大器的输出频带,以及用于顺序地输出来自多个处理电路的信号的水平输出线 的第三电容器元件。

    Solid state image pickup device and manufacturing method therefor
    5.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号:US08138528B2

    公开(公告)日:2012-03-20

    申请号:US12716488

    申请日:2010-03-03

    IPC分类号: H01L29/76

    摘要: A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.

    摘要翻译: 在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域,第二导电类型的第二半导体区域,第一导电类型的第三半导体区域的光电转换单元 以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。 此外,具有栅电极的放大MOS晶体管连接到第四半导体区域,并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方,并且与绝缘体 在转移MOS晶体管的栅极电极下方。

    IMAGE CAPTURE DEVICE HAVING AMPLIFICATION CIRCUIT FOR AMPLIFYING SIGNAL FROM PHOTOELECTRIC CONVERSION PORTION
    6.
    发明申请
    IMAGE CAPTURE DEVICE HAVING AMPLIFICATION CIRCUIT FOR AMPLIFYING SIGNAL FROM PHOTOELECTRIC CONVERSION PORTION 有权
    具有用于从光电转换部分放大信号的放大电路的图像捕获装置

    公开(公告)号:US20110102654A1

    公开(公告)日:2011-05-05

    申请号:US13004771

    申请日:2011-01-11

    IPC分类号: H04N5/335 H04N3/14

    CPC分类号: H04N5/378 H04N5/361

    摘要: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier. The image capture device further includes a plurality of third capacitor elements configured to hold signals from the differential amplifiers of the plurality of processing circuits and to limit an output frequency band of each differential amplifier, and a horizontal output line for sequentially outputting signals from the plurality of third capacitor elements.

    摘要翻译: 图像捕获装置包括用于捕获对象图像的多个图像捕获元件,用于从多个图像捕获元件中读取信号的多个垂直输出线以及多个处理电路。 每个处理电路包括第一电容器元件,其具有连接到所述多个垂直输出线之一的第一电极,差分放大器,具有连接到所述第一电容器元件的第二电极的第一输入端子,连接在所述第一电容器元件之间的第二电容器元件 输入端子和差分放大器的输出端子,以及被配置为控制差分放大器的第一输入端子和输出端子之间的导通的第一开关。 图像捕获装置还包括多个第三电容器元件,其被配置为保持来自多个处理电路的差分放大器的信号并限制每个差分放大器的输出频带,以及用于顺序地输出来自多个处理电路的信号的水平输出线 的第三电容器元件。

    Photoelectric conversion device and imaging system
    7.
    发明授权
    Photoelectric conversion device and imaging system 有权
    光电转换装置及成像系统

    公开(公告)号:US07741593B2

    公开(公告)日:2010-06-22

    申请号:US12360342

    申请日:2009-01-27

    CPC分类号: H04N5/3598 H04N5/378

    摘要: A photoelectric conversion device comprises: a clipping unit including a MOS transistor which has a source connected to a signal line and a drain being connected to a power supply, and the clipping unit clipping an electric potential of the signal line to an electric potential corresponding to an electric potential of the source; a holding capacitance which has a first electrode and a second electrode, the first electrode being connected to a gate of the MOS transistor, and the holding capacitance holding at least a voltage transferred to the signal line while the charge-voltage converter has been reset; and a shift unit which shifts an electric potential of the second electrode in a direction such that the electric potential of the second electrode comes close to a level to be transferred to the signal line while the charge-voltage converter has been reset.

    摘要翻译: 光电转换装置包括:剪切单元,包括MOS晶体管,其具有连接到信号线的源极,漏极连接到电源,并且所述限幅单元将所述信号线的电势削减到对应于 源的电位; 具有第一电极和第二电极的保持电容,所述第一电极连接到所述MOS晶体管的栅极,并且所述保持电容在所述电荷 - 电压转换器已被复位时至少保持传递到所述信号线的电压; 以及移位单元,其在电荷 - 电压转换器已被复位的同时沿着使得第二电极的电位接近于要传送到信号线的电平的方向移位第二电极的电位。

    Solid state image pickup device and manufacturing method therefor
    8.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号:US07705373B2

    公开(公告)日:2010-04-27

    申请号:US11773731

    申请日:2007-07-05

    IPC分类号: H01L29/76

    摘要: A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.

    摘要翻译: MOS型固态摄像装置包括:具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元, 位于第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管,第二导电类型的第四半导体区域和设置在第一半导体区域上的绝缘膜上的栅电极 半导体区域,以将电荷载体从第二半导体区域转移到第四半导体区域。 光电转换单元和转移MOS晶体管设置在基板上。 第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域,并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在 在第四半导体区域中的栅电极。 转移MOS晶体管的漏极包括第四和第六半导体区域,并且偏置被施加到漏极,并且在从第二半导体区域读出电荷载流子期间,第五半导体区域被耗尽。

    Solid state image pickup device, camera, and driving method of solid state image pickup device
    9.
    发明授权
    Solid state image pickup device, camera, and driving method of solid state image pickup device 有权
    固态图像拾取装置,相机和固态图像拾取装置的驱动方法

    公开(公告)号:US07466003B2

    公开(公告)日:2008-12-16

    申请号:US11328108

    申请日:2006-01-10

    IPC分类号: H01L31/06

    摘要: A solid state image pickup device that can properly widen a dynamic range is provided. Carriers that have overflowed from photodiodes (1003a to 1003c) to lateral overflow regions (1010a to 1010c) and carriers accumulated in the photodiodes (1003a and 1003b) are transferred to FD regions (1005a to 1005c). Signals based on those carriers are added and held in a signal level holding capacitor (Cs) and read out therefrom, thereby widening the dynamic range.

    摘要翻译: 提供了可以适当地扩大动态范围的固态图像拾取装置。 从光电二极管(1003a至1003c)溢出到横向溢出区域(1010a至1010c)的载流子和积聚在光电二极管(1003a和1003b)中的载流子转移到FD区域(1005a至1005c)。 基于这些载波的信号被添加并保持在信号电平保持电容器(Cs)中并从其读出,从而扩大动态范围。