Integrated circuit, variable filter adjusting method therefor, and
electronic equipment using the same
    1.
    发明授权
    Integrated circuit, variable filter adjusting method therefor, and electronic equipment using the same 失效
    集成电路,可变滤波器调节方法以及使用其的电子设备

    公开(公告)号:US5815033A

    公开(公告)日:1998-09-29

    申请号:US627114

    申请日:1996-04-03

    IPC分类号: H03H11/04 H03B1/00

    CPC分类号: H03H11/04

    摘要: The present invention is to provide an integrated circuit capable of reducing the substrate area, a variable filter adjusting method for the integrated circuit, and an electronic equipment using the integrated circuit, in which disorder of an external element and its temperature characteristic can be automatically corrected following the adjustment of disorder of the internal elements and their temperature characteristics by performing digital/analog conversion of a control signal to be input to a first adjustment unit for adjusting the disorder of internal elements of the integrated circuit and their temperature characteristics, so that the control signal can be input to a second adjustment unit as a reference signal of a digital/analog converter.

    摘要翻译: 本发明提供一种能够减小基板面积的集成电路,集成电路的可变滤波器调整方法以及使用该集成电路的电子设备,其中可以自动校正外部元件的紊乱及其温度特性 通过对要输入到第一调整单元的控制信号进行数字/模拟转换来调整内部元件的无序和其温度特性,以调整集成电路的内部元件的混乱及其温度特性,从而使得 控制信号可以作为数/模转换器的参考信号输入到第二调整单元。

    Circuit device utilizing a plurality of transistor pairs
    2.
    发明授权
    Circuit device utilizing a plurality of transistor pairs 失效
    利用多个晶体管对的电路装置

    公开(公告)号:US5455580A

    公开(公告)日:1995-10-03

    申请号:US170380

    申请日:1993-12-20

    IPC分类号: H03M1/74 H04N5/92 H03M1/66

    CPC分类号: H03M1/745

    摘要: A circuit device according to the present invention comprises a plurality of transistor pairs, the number of which corresponds to a quantizing bit number, each of the plurality of transistor pairs being a pair of transistors having respective control electrodes connected to each other and respective first primary electrodes connected to each other, and a connecting line arranged to connect in series a second primary electrode of one transistor of one transistor pair among the plurality of transistor pairs to first primary electrodes of another transistor pair among the plurality of transistor pairs so as to constitute a binary-weighted current source. With the above-described arrangement, it is possible to reduce an area to be occupied by the circuit device and it is also possible to miniaturize the circuit device. Further, it is possible to reduce the cost of the circuit device.

    摘要翻译: 根据本发明的电路装置包括多个晶体管对,其数量对应于量化位数,多个晶体管对中的每一个是具有彼此连接的相应控制电极的一对晶体管,并且相应的第一初级 电极彼此连接,以及连接线,其布置成将多个晶体管对中的一个晶体管对的一个晶体管的第二主电极串联连接到多个晶体管对中的另一晶体管对的第一主电极,以构成 二进制加权电流源。 利用上述结构,可以减少由电路装置占用的面积,并且还可以使电路装置小型化。 此外,可以降低电路装置的成本。

    Image capture device having amplification circuit for amplifying signal from photoelectric conversion portion
    3.
    发明授权
    Image capture device having amplification circuit for amplifying signal from photoelectric conversion portion 有权
    具有用于放大来自光电转换部分的信号的放大电路的图像捕获器

    公开(公告)号:US08462242B2

    公开(公告)日:2013-06-11

    申请号:US13004771

    申请日:2011-01-11

    CPC分类号: H04N5/378 H04N5/361

    摘要: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier. The image capture device further includes a plurality of third capacitor elements configured to hold signals from the differential amplifiers of the plurality of processing circuits and to limit an output frequency band of each differential amplifier, and a horizontal output line for sequentially outputting signals from the plurality of third capacitor elements.

    摘要翻译: 图像捕获装置包括用于捕获对象图像的多个图像捕获元件,用于从多个图像捕获元件中读取信号的多个垂直输出线以及多个处理电路。 每个处理电路包括第一电容器元件,其具有连接到所述多个垂直输出线之一的第一电极,差分放大器,具有连接到所述第一电容器元件的第二电极的第一输入端子,连接在所述第一电容器元件之间的第二电容器元件 输入端子和差分放大器的输出端子,以及被配置为控制差分放大器的第一输入端子和输出端子之间的导通的第一开关。 图像捕获装置还包括多个第三电容器元件,其被配置为保持来自多个处理电路的差分放大器的信号并限制每个差分放大器的输出频带,以及用于顺序地输出来自多个处理电路的信号的水平输出线 的第三电容器元件。

    Solid state image pickup device and manufacturing method therefor
    4.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号:US08138528B2

    公开(公告)日:2012-03-20

    申请号:US12716488

    申请日:2010-03-03

    IPC分类号: H01L29/76

    摘要: A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor.

    摘要翻译: 在半导体衬底上的MOS型固体摄像器件包括具有第一导电类型的第一半导体区域,第二导电类型的第二半导体区域,第一导电类型的第三半导体区域的光电转换单元 以及具有设置在绝缘膜上并从第四半导体区域传送电荷载流子的栅电极的转移MOS晶体管。 此外,具有栅电极的放大MOS晶体管连接到第四半导体区域,并且第二导电类型的第五半导体区域连续地设置到第二半导体区域和栅电极下方,并且与绝缘体 在转移MOS晶体管的栅极电极下方。

    IMAGE CAPTURE DEVICE HAVING AMPLIFICATION CIRCUIT FOR AMPLIFYING SIGNAL FROM PHOTOELECTRIC CONVERSION PORTION
    5.
    发明申请
    IMAGE CAPTURE DEVICE HAVING AMPLIFICATION CIRCUIT FOR AMPLIFYING SIGNAL FROM PHOTOELECTRIC CONVERSION PORTION 有权
    具有用于从光电转换部分放大信号的放大电路的图像捕获装置

    公开(公告)号:US20110102654A1

    公开(公告)日:2011-05-05

    申请号:US13004771

    申请日:2011-01-11

    IPC分类号: H04N5/335 H04N3/14

    CPC分类号: H04N5/378 H04N5/361

    摘要: An image capture device includes a plurality of image capture elements for capturing an object image, a plurality of vertical output lines for reading signals out of the plurality of image capture elements, and a plurality of processing circuits. Each processing circuit includes a first capacitor element having a first electrode connected to one of the plurality of vertical output lines, a differential amplifier having a first input terminal connected to a second electrode of the first capacitor element, a second capacitor element connected between the first input terminal and an output terminal of the differential amplifier, and a first switch configured to control conduction between the first input terminal and the output terminal of the differential amplifier. The image capture device further includes a plurality of third capacitor elements configured to hold signals from the differential amplifiers of the plurality of processing circuits and to limit an output frequency band of each differential amplifier, and a horizontal output line for sequentially outputting signals from the plurality of third capacitor elements.

    摘要翻译: 图像捕获装置包括用于捕获对象图像的多个图像捕获元件,用于从多个图像捕获元件中读取信号的多个垂直输出线以及多个处理电路。 每个处理电路包括第一电容器元件,其具有连接到所述多个垂直输出线之一的第一电极,差分放大器,具有连接到所述第一电容器元件的第二电极的第一输入端子,连接在所述第一电容器元件之间的第二电容器元件 输入端子和差分放大器的输出端子,以及被配置为控制差分放大器的第一输入端子和输出端子之间的导通的第一开关。 图像捕获装置还包括多个第三电容器元件,其被配置为保持来自多个处理电路的差分放大器的信号并限制每个差分放大器的输出频带,以及用于顺序地输出来自多个处理电路的信号的水平输出线 的第三电容器元件。

    Photoelectric conversion device and imaging system
    6.
    发明授权
    Photoelectric conversion device and imaging system 有权
    光电转换装置及成像系统

    公开(公告)号:US07741593B2

    公开(公告)日:2010-06-22

    申请号:US12360342

    申请日:2009-01-27

    CPC分类号: H04N5/3598 H04N5/378

    摘要: A photoelectric conversion device comprises: a clipping unit including a MOS transistor which has a source connected to a signal line and a drain being connected to a power supply, and the clipping unit clipping an electric potential of the signal line to an electric potential corresponding to an electric potential of the source; a holding capacitance which has a first electrode and a second electrode, the first electrode being connected to a gate of the MOS transistor, and the holding capacitance holding at least a voltage transferred to the signal line while the charge-voltage converter has been reset; and a shift unit which shifts an electric potential of the second electrode in a direction such that the electric potential of the second electrode comes close to a level to be transferred to the signal line while the charge-voltage converter has been reset.

    摘要翻译: 光电转换装置包括:剪切单元,包括MOS晶体管,其具有连接到信号线的源极,漏极连接到电源,并且所述限幅单元将所述信号线的电势削减到对应于 源的电位; 具有第一电极和第二电极的保持电容,所述第一电极连接到所述MOS晶体管的栅极,并且所述保持电容在所述电荷 - 电压转换器已被复位时至少保持传递到所述信号线的电压; 以及移位单元,其在电荷 - 电压转换器已被复位的同时沿着使得第二电极的电位接近于要传送到信号线的电平的方向移位第二电极的电位。

    Solid state image pickup device and manufacturing method therefor
    7.
    发明授权
    Solid state image pickup device and manufacturing method therefor 有权
    固态摄像装置及其制造方法

    公开(公告)号:US07705373B2

    公开(公告)日:2010-04-27

    申请号:US11773731

    申请日:2007-07-05

    IPC分类号: H01L29/76

    摘要: A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type forming a pn-junction with the first semiconductor region, a third semiconductor region of the first conductivity type disposed at a light incident side of the second semiconductor region, and a transfer MOS transistor having the second semiconductor region, a fourth semiconductor region of the second conductivity type, and a gate electrode disposed on an insulating film on the first semiconductor region between the photoelectric conversion unit and the fourth semiconductor region to transfer a charge carrier from the second semiconductor region to the fourth semiconductor region. The photoelectric conversion unit and the transfer MOS transistor are disposed on a substrate. A fifth semiconductor region of the second conductivity type is arranged continuously to the second semiconductor region under the gate electrode, and a sixth semiconductor region of the second conductivity type having an impurity concentration lower than that of the fourth semiconductor region is arranged at a side of the gate electrode in the fourth semiconductor region. A drain of the transfer MOS transistor includes the fourth and sixth semiconductor regions, and a bias is applied to the drain, and the fifth semiconductor region is depleted during reading out the charge carrier from the second semiconductor region.

    摘要翻译: MOS型固态摄像装置包括:具有第一导电类型的第一半导体区域的第一半导体区域的第二半导体区域和与该第一半导体区域形成pn结的第二导电类型的第二半导体区域的光电转换单元, 位于第二半导体区域的光入射侧的第一导电类型和具有第二半导体区域的转移MOS晶体管,第二导电类型的第四半导体区域和设置在第一半导体区域上的绝缘膜上的栅电极 半导体区域,以将电荷载体从第二半导体区域转移到第四半导体区域。 光电转换单元和转移MOS晶体管设置在基板上。 第二导电类型的第五半导体区域被连续配置到栅极下方的第二半导体区域,并且具有比第四半导体区域低的杂质浓度的第二导电类型的第六半导体区域被布置在 在第四半导体区域中的栅电极。 转移MOS晶体管的漏极包括第四和第六半导体区域,并且偏置被施加到漏极,并且在从第二半导体区域读出电荷载流子期间,第五半导体区域被耗尽。

    Solid state image pickup device, camera, and driving method of solid state image pickup device
    8.
    发明授权
    Solid state image pickup device, camera, and driving method of solid state image pickup device 有权
    固态图像拾取装置,相机和固态图像拾取装置的驱动方法

    公开(公告)号:US07466003B2

    公开(公告)日:2008-12-16

    申请号:US11328108

    申请日:2006-01-10

    IPC分类号: H01L31/06

    摘要: A solid state image pickup device that can properly widen a dynamic range is provided. Carriers that have overflowed from photodiodes (1003a to 1003c) to lateral overflow regions (1010a to 1010c) and carriers accumulated in the photodiodes (1003a and 1003b) are transferred to FD regions (1005a to 1005c). Signals based on those carriers are added and held in a signal level holding capacitor (Cs) and read out therefrom, thereby widening the dynamic range.

    摘要翻译: 提供了可以适当地扩大动态范围的固态图像拾取装置。 从光电二极管(1003a至1003c)溢出到横向溢出区域(1010a至1010c)的载流子和积聚在光电二极管(1003a和1003b)中的载流子转移到FD区域(1005a至1005c)。 基于这些载波的信号被添加并保持在信号电平保持电容器(Cs)中并从其读出,从而扩大动态范围。

    IMAGE PICKUP APPARATUS
    10.
    发明申请
    IMAGE PICKUP APPARATUS 失效
    图像拾取装置

    公开(公告)号:US20080252761A1

    公开(公告)日:2008-10-16

    申请号:US11842400

    申请日:2007-08-21

    IPC分类号: H04N5/335

    摘要: An image pickup apparatus comprising: a plurality of pixels each including a photoelectric converting element; a plurality of capacitor which receive signals from the plurality of pixels at first terminals; a plurality of clamping switches for setting a second terminal of each of the plurality of capacitor into a predetermined electric potential; a plurality of first storing units for storing signals from the second terminals of the plurality of capacitor; a plurality of second storing units for storing the signals from the second terminals of the plurality of capacitor; a first common output line to which the signals from the plurality of first storing units are sequentially output; a second common output line to which the signals from the plurality of second storing units are sequentially output; and a difference circuit for operating a difference between the signal from the first common output line and the signal from the second common output line.

    摘要翻译: 一种图像拾取装置,包括:多个像素,每个像素包括光电转换元件; 多个电容器,其在第一端子处接收来自所述多个像素的信号; 多个钳位开关,用于将所述多个电容器中的每一个的第二端子设定为预定电位; 多个第一存储单元,用于存储来自多个电容器的第二端子的信号; 多个第二存储单元,用于存储来自多个电容器的第二端子的信号; 顺序地输出来自多个第一存储单元的信号的第一公共输出线; 顺序地输出来自多个第二存储单元的信号的第二公共输出线; 以及用于操作来自第一公共输出线的信号与来自第二公共输出线的信号之间的差的差分电路。