摘要:
Processes for producing cast-coated papers showing a reduced level of curling after the preparation of the cast-coated papers and reduced curling or wavy deformation caused by moisture absorption or other reasons as well as showing a high surface quality in the cast-coated surface are provided. Thus, processes for producing cast-coated papers comprising the steps of applying a coating color based on a pigment and an adhesive on one side of a base paper, and pressing/drying the coated layer in the wet state against a casting drum mirror surface, wherein moisture is added to the coated paper by passing it through air at a high temperature and a high humidity (for 20 seconds or more) after pressing/drying the coated layer against a casting drum, as well as apparatuses therefor are provided.
摘要:
Methods for producing cast-coated papers showing a reduced level of curling and reduced curling or wavy deformation caused by moisture absorption or other reasons as well as showing a high surface quality in the cast-coated surface. The steps for producing cast-coated papers include applying a coating color based on a pigment and an adhesive on one side of a base paper, and pressing/drying the coated layer in the wet state against a casting drum mirror surface, where moisture is added to the coated paper by passing it through conditioned air at a high temperature and a high humidity (for 20 seconds or more) after pressing/drying the coated layer against a casting drum.
摘要:
A method is provided in order to manufacture a silicon carbide epitaxial wafer whose surface flatness is very good and has a very low density of carrot defects and triangular defects arising after epitaxial growth. The silicon carbide epitaxial wafer is manufactured by a first step of annealing a silicon carbide bulk substrate that is tilted less than 5 degrees from face, in a reducing gas atmosphere at a first temperature T1 for a treatment time t, a second step of reducing the temperature of the substrate in the reducing gas atmosphere, and a third step of performing epitaxial growth at a second temperature T2 below the annealing temperature T1 in the first step, while supplying at least a gas including silicon atoms and a gas including carbon atoms.
摘要:
Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.
摘要:
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga—N substrate (1) over which a semiconductor element is formed, and an n-electrode (10) as a metal electrode formed over the back surface of the GaN substrate (1). A connection layer (20) is formed between the GaN substrate (1) and the n-electrode (10), and the connection layer (2) is composed of a material that is other than nitride semiconductors and that contains silicon.
摘要:
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译:本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件,其具有Al x Ga 1-x N沟道层,Al x Ga 1-x N沟道层的组成比为Al(x(0
摘要:
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlxGa1-xN channel layer with a composition ratio of Al being x (0
摘要翻译:本发明的目的是提供能够获得高输出和高击穿电压的异质结场效应晶体管的半导体器件及其制造方法。 本发明是一种异质结场效应晶体管的半导体器件,其具有Al x Ga 1-x N沟道层,Al x Ga 1-x N沟道层的组成比为Al(x(0
摘要:
Simple and small-sized equipment which continuously afford alternate twists to an optical fiber and a method using the apparatus are provided. The equipment includes: a guide roller for causing the fiber to roll; a roller supporting member for holding the roller in a manner allowing the roller to freely turn about an axial center X; and a driving unit to cause the roller to oscillate by making the supporting member to turn about an axial center Y that is inclined relative to the axial center X. The method includes: arranging a guide roller to intersect the fiber, the roller being held by a roller supporting member to freely turn about an axial center X; oscillating the roller by driving the supporting member to revolve about the axial center Y which is inclined relative to the axis center X; and causing the fiber to roll to afford alternate twists to the fiber.
摘要:
A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.
摘要:
A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.