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公开(公告)号：US08137046B2
公开(公告)日：2012-03-20
申请号：US12536912
申请日：2009-08-06
IPC分类号： B65G35/00
CPC分类号： H01L21/67784 , H01L21/67748
摘要： A substrate transfer apparatus comprising: a plurality of floating-transfer guide plates adjacent to each other, each of guide plates having a plurality of floating gas ejecting holes; a gas supplying source; a tray to mount a substrate to be transferred, and that is floated by the floating gas; and a transfer arm for transferring the floated tray from the guide plate to the adjacent other guide plate, wherein the tray includes both side edges, and a contact/engagement portion formed at the respective both side edges for the transfer arm, each of the transfer arms including a base portion that can horizontally reciprocate along a rail provided so as to be parallel to the transfer direction, a guide portion provided to the base portion, that can horizontally reciprocate in a direction orthogonal to the transfer direction, and an arm portion provided to the guide portion, that can horizontally reciprocate in the direction parallel to the transfer direction.
摘要翻译： 一种基板传送装置，包括：彼此相邻的多个浮动传送导向板，每个导板具有多个浮动气体喷射孔; 气体供应源; 用于安装待转移的基板并由浮动气体浮动的托盘; 以及用于将浮托盘从引导板传送到相邻的另一个引导板的传送臂，其中托盘包括两个侧边缘，以及形成在传送臂的相应两个侧边缘处的接触/接合部分，每个传送 包括可沿着设置成平行于传送方向的轨道水平往复运动的基部的臂，设置在基部上的引导部，该引导部能够沿与传送方向正交的方向水平往复运动;以及臂部， 导向部分能够沿平行于传送方向的方向水平往复运动。
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2.发明授权Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same 有权掺杂有Mg或Zn的铁硫化物半导体，结器件和包含它们的光电转换器公开(公告)号：US08093684B2
公开(公告)日：2012-01-10
申请号：US11651086
申请日：2007-01-09
IPC分类号： H01L29/24 , H01L29/36 , H01L31/032 , H01L31/036
CPC分类号： H01L31/068 , H01L31/0321 , Y02E10/547
摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IUPAC系统的第13族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。
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3.发明申请公开(公告)号：US20070151596A1
公开(公告)日：2007-07-05
申请号：US10587541
申请日：2005-01-07
IPC分类号： H01L31/00
CPC分类号： H01L31/0236 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/076 , H01L31/1884 , Y02E10/548
摘要： A substrate 1 for a photoelectric conversion device includes a first transparent conductive layer 5 formed on at least a part of the surface region of a transparent substrate 3, the first transparent conductive layer 5 having at least an opening portion 7 exposing the substrate 3.
摘要翻译： 用于光电转换装置的基板1包括形成在透明基板3的表面区域的至少一部分上的第一透明导电层5，第一透明导电层5至少具有暴露基板3的开口部分7。
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4.发明申请SEMICONDUCTOR, N-TYPE SEMICONDUCTOR, P-TYPE SEMICONDUCTOR, SEMICONDUCTOR JUNCTION DEVICE, PN JUNCTION DEVICE AND PHOTOELECTRIC CONVERTER 审中-公开半导体器件，N型半导体器件，P型半导体器件，半导体连接器件，PN结器件和光电转换器公开(公告)号：US20120080774A1
公开(公告)日：2012-04-05
申请号：US13313761
申请日：2011-12-07
IPC分类号： H01L29/12
CPC分类号： H01L31/068 , H01L31/0321 , Y02E10/547
摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IUPAC系统的第13族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。
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5.发明授权公开(公告)号：US08957300B2
公开(公告)日：2015-02-17
申请号：US10587541
申请日：2005-01-07
IPC分类号： H01L25/00 , H01L31/0236 , H01L31/0224 , H01L31/076 , H01L31/18
CPC分类号： H01L31/0236 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/076 , H01L31/1884 , Y02E10/548
摘要： A substrate 1 for a photoelectric conversion device includes a first transparent conductive layer 5 formed on at least a part of the surface region of a transparent substrate 3, the first transparent conductive layer 5 having at least an opening portion 7 exposing the substrate 3.
摘要翻译： 用于光电转换装置的基板1包括形成在透明基板3的表面区域的至少一部分上的第一透明导电层5，第一透明导电层5至少具有暴露基板3的开口部分7。
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公开(公告)号：US08258596B2
公开(公告)日：2012-09-04
申请号：US12523633
申请日：2007-11-15
IPC分类号： H01L31/103 , H01L21/329
CPC分类号： H01L31/0236 , H01L31/022425 , H01L31/02366 , H01L31/076 , Y02E10/548
摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.
摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。
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7.发明申请公开(公告)号：US20100059847A1
公开(公告)日：2010-03-11
申请号：US12523633
申请日：2007-11-15
IPC分类号： H01L31/103 , H01L21/329
CPC分类号： H01L31/0236 , H01L31/022425 , H01L31/02366 , H01L31/076 , Y02E10/548
摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.
摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。
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8.发明申请Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter 有权半导体，n型半导体，p型半导体，半导体结器件，pn结器件和光电转换器公开(公告)号：US20070163635A1
公开(公告)日：2007-07-19
申请号：US11651086
申请日：2007-01-09
CPC分类号： H01L31/068 , H01L31/0321 , Y02E10/547
摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group IIIb element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IIIb族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。
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