利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

38 条记录 (耗时 0.027 秒)

    SEMICONDUCTOR, N-TYPE SEMICONDUCTOR, P-TYPE SEMICONDUCTOR, SEMICONDUCTOR JUNCTION DEVICE, PN JUNCTION DEVICE AND PHOTOELECTRIC CONVERTER
    2.
    发明申请
    SEMICONDUCTOR, N-TYPE SEMICONDUCTOR, P-TYPE SEMICONDUCTOR, SEMICONDUCTOR JUNCTION DEVICE, PN JUNCTION DEVICE AND PHOTOELECTRIC CONVERTER 审中-公开
    半导体器件，N型半导体器件，P型半导体器件，半导体连接器件，PN结器件和光电转换器

    公开(公告)号：US20120080774A1

    公开(公告)日：2012-04-05

    申请号：US13313761

    申请日：2011-12-07

    申请人： Yoshiyuki NASUNO ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    发明人： Yoshiyuki NASUNO ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    IPC分类号： H01L29/12

    CPC分类号： H01L31/068 ,  H01L31/0321 ,  Y02E10/547

    摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

    摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IUPAC系统的第13族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。

    Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter
    3.
    发明申请
    Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter 有权
    半导体，n型半导体，p型半导体，半导体结器件，pn结器件和光电转换器

    公开(公告)号：US20070163635A1

    公开(公告)日：2007-07-19

    申请号：US11651086

    申请日：2007-01-09

    申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    IPC分类号： H01L31/00 ,  H01B1/10

    CPC分类号： H01L31/068 ,  H01L31/0321 ,  Y02E10/547

    摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group IIIb element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

    摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IIIb族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。

    Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same
    4.
    发明授权
    Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same 有权
    掺杂有Mg或Zn的铁硫化物半导体，结器件和包含它们的光电转换器

    公开(公告)号：US08093684B2

    公开(公告)日：2012-01-10

    申请号：US11651086

    申请日：2007-01-09

    申请人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    发明人： Yoshiyuki Nasuno ,  Noriyoshi Kohama ,  Kazuhito Nishimura

    IPC分类号： H01L29/24 ,  H01L29/36 ,  H01L31/032 ,  H01L31/036

    CPC分类号： H01L31/068 ,  H01L31/0321 ,  Y02E10/547

    摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.

    摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IUPAC系统的第13族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。

    PHOTOELECTRIC CONVERSION DEVICE
    7.
    发明申请
    PHOTOELECTRIC CONVERSION DEVICE 审中-公开
    光电转换器件

    公开(公告)号：US20130081685A1

    公开(公告)日：2013-04-04

    申请号：US13700237

    申请日：2011-02-17

    申请人： Kazuhito Nishimura ,  Yoshiyuki Nasuno ,  Takanori Nakano

    发明人： Kazuhito Nishimura ,  Yoshiyuki Nasuno ,  Takanori Nakano

    IPC分类号： H01L31/076

    CPC分类号： H01L31/076 ,  H01L21/02532 ,  H01L21/02576 ,  H01L31/03529 ,  H01L31/03767 ,  H01L31/03921 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

    摘要： A photoelectric conversion device including a substrate and a pin type photoelectric conversion layer disposed on the surface of the substrate is provided. The pin type photoelectric conversion layer includes a first pin type photoelectric conversion layer formed by stacking a p type semiconductor layer, an i type semiconductor layer serving as an amorphous semiconductor layer and an n type semiconductor layer. The first pin type photoelectric conversion layer includes the first portion located on a part of the surface of the substrate and the second portion located on another part of the surface of the substrate. The first portion is higher in concentration of at least one impurity element selected from oxygen, nitrogen and carbon than the second portion. The first portion is less in thickness than the second portion.

    摘要翻译： 提供一种光电转换装置，其包括设置在基板表面上的基板和pin型光电转换层。 针式光电转换层包括通过堆叠p型半导体层，用作非晶半导体层的i型半导体层和n型半导体层形成的第一引脚型光电转换层。 第一pin型光电转换层包括位于基板表面的一部分上的第一部分和位于基板表面的另一部分上的第二部分。 与第二部分相比，第一部分的浓度高于选自氧，氮和碳的至少一种杂质元素。 第一部分的厚度小于第二部分。

    SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE USING THE SUBSTRATE, AND METHOD FOR PRODUCING THE SUBSTRATE AND DEVICE
    9.
    发明申请
    SUBSTRATE FOR PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE USING THE SUBSTRATE, AND METHOD FOR PRODUCING THE SUBSTRATE AND DEVICE 审中-公开
    光电转换装置用基板，使用该基板的光电转换装置及其制造方法

    公开(公告)号：US20130000721A1

    公开(公告)日：2013-01-03

    申请号：US13634971

    申请日：2010-03-31

    申请人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

    发明人： Yoshiyuki Nasuno ,  Kazuhito Nishimura ,  Hiroki Tanimura ,  Kei Kajihara

    IPC分类号： H01L31/0236 ,  H01L31/18

    CPC分类号： H01L31/02366 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  Y02E10/541 ,  Y02P70/521

    摘要： A photoelectric conversion device includes a substrate and a transparent, electrically conductive film covering at least a portion of a major surface of the substrate and having an irregular geometry on a surface thereof closer to a semiconductor layer. Furthermore, the photoelectric conversion device includes a first conduction type semiconductor layer covering at least a portion of the irregular geometry of the transparent, electrically conductive film, and a light absorption layer covering the first conduction type semiconductor layer. The irregular geometry has a bump having a maximum height equal to or larger than 50 nm and equal to or smaller than 1200 nm. The bump has a surface having a submicron recess having local peaks having a spacing equal to or larger than 2 nm and equal to or smaller than 25 nm.

    摘要翻译： 光电转换装置包括基板和覆盖基板的主表面的至少一部分并且在其更靠近半导体层的表面上具有不规则几何形状的透明导电膜。 此外，光电转换装置包括覆盖透明导电膜的不规则几何形状的至少一部分的第一导电型半导体层和覆盖第一导电型半导体层的光吸收层。 不规则几何形状具有最大高度等于或大于50nm且等于或小于1200nm的凸块。 凸块具有具有亚微米凹部的表面，其具有等于或大于2nm且等于或小于25nm的间隔的局部峰。