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    Magnetoresistive Element and Magnetic Memory
    5.
    发明申请
    Magnetoresistive Element and Magnetic Memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US20120320666A1

    公开(公告)日：2012-12-20

    申请号：US13578866

    申请日：2011-02-14

    申请人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    发明人： Hideo Ohno ,  Shoji Ikeda ,  Fumihiro Matsukura ,  Masaki Endoh ,  Shun Kanai ,  Katsuya Miura ,  Hiroyuki Yamamoto

    IPC分类号： G11C11/15 ,  G11B5/673

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

    摘要： There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.

    摘要翻译： 提供了一种磁阻元件，其磁化方向在垂直于膜表面的方向上是稳定的并且其磁阻比被控制，以及使用这种磁阻元件的磁存储器。 通过使形成磁阻元件的铁磁层的材料包含含有至少一种类型的3d过渡金属或Heusler合金的铁磁材料，以控制磁阻比，并且通过控制原子层上的铁磁层的厚度 磁化方向从膜表面垂直于膜表面进行平面切换。

    Magnetic memory
    6.
    发明授权
    Magnetic memory 有权
    磁记忆

    公开(公告)号：US08957486B2

    公开(公告)日：2015-02-17

    申请号：US13147820

    申请日：2009-03-04

    申请人： Kenchi Ito ,  Jun Hayakawa ,  Katsuya Miura ,  Hiroyuki Yamamoto

    发明人： Kenchi Ito ,  Jun Hayakawa ,  Katsuya Miura ,  Hiroyuki Yamamoto

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675

    摘要： Provided is a magnetic random access memory to which spin torque magnetization reversal is applied, the magnetic random access memory being thermal stable in a reading operation and also being capable of reducing a current in a wiring operation. A magnetoresistive effect element formed by sequentially stacking a fixed layer, a nonmagnetic barrier layer, and a recording layer is used as a memory element. The recording layer adopts a laminated ferrimagnetic structure. The magnetic memory satisfies the expression Ms2(t/w)>|Jex|>(2kBTΔ)/S, in which kB is a Boltzmann constant, T is an operating temperature of the magnetic memory, S is an area parallel to a film surface of the magnetoresistive effect element, t and Ms are respectively a film thickness and a saturated magnetization of the ferromagnetic layer having a smaller film thickness among two ferromagnetic layers which are constituent members of the laminated ferrimagnetic structure, w is a length of a short side of the recording layer, Δ is a thermal stability index of the magnetic memory, and Jex is exchange coupling energy acting between the two ferromagnetic layers of the recording layer.

    摘要翻译： 提供了一种磁性随机存取存储器，其中施加了自旋扭矩磁化反转，磁性随机存取存储器在读取操作中是热稳定的，并且还能够减少布线操作中的电流。 使用通过依次层叠固定层，非磁性阻挡层和记录层而形成的磁阻效应元件作为存储元件。 记录层采用叠层铁磁结构。 磁存储器满足表达式Ms2（t / w）> | Jex |>（2kBT＆Dgr）/ S，其中kB是玻尔兹曼常数，T是磁存储器的工作温度，S是与膜平行的区域 磁阻效应元件的表面t和Ms分别是作为叠层铁氧体结构的构成部件的两个铁磁层之中具有较小膜厚度的铁磁层的膜厚度和饱和磁化强度，w是短边的长度 的记录层，＆Dgr; 是磁存储器的热稳定性指数，Jex是作用在记录层的两个铁磁层之间的交换耦合能量。

    Spin Torque Magnetic Memory and Offset Magnetic Field Correcting Method Thereof
    9.
    发明申请
    Spin Torque Magnetic Memory and Offset Magnetic Field Correcting Method Thereof 失效
    自旋扭矩磁记忆和偏移磁场校正方法

    公开(公告)号：US20090161414A1

    公开(公告)日：2009-06-25

    申请号：US12339167

    申请日：2008-12-19

    申请人： Kenchi ITO ,  Jun Hayakawa ,  Katsuya Miura

    发明人： Kenchi ITO ,  Jun Hayakawa ,  Katsuya Miura

    IPC分类号： G11C11/02 ,  G11C11/14 ,  G11C11/416

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  Y10S977/935

    摘要： An object of the present invention corrects fluctuation of a writing current between cells in a magnetic random access memory using spin torque magnetization reversal. The present invention includes a magneto-resistive effect element that is disposed between a bit line and a word line, a first variable resistance element that is connected to one end of the bit line, a second variable resistance element that is connected to the other end of the bit line, a first voltage applying unit that applies voltage to the first variable resistance element, and a second voltage applying unit that applies voltage to the second variable resistance element, when a writing operation is performed, an offset magnetic field is applied to a free layer of the magneto-resistive effect element by flowing a variable current between the first voltage applying unit and the second voltage applying unit based on a predetermined resistance value.

    摘要翻译： 本发明的目的是使用自旋扭矩磁化反转校正磁性随机存取存储器中的单元之间的写入电流的波动。 本发明包括设置在位线和字线之间的磁阻效应元件，连接到位线的一端的第一可变电阻元件，与另一端连接的第二可变电阻元件 位线的第一电压施加单元，对第一可变电阻元件施加电压的第一施加电压单元和向第二可变电阻元件施加电压的第二电压施加单元，当执行写入操作时，将偏移磁场施加到 通过基于预定的电阻值在第一电压施加单元和第二电压施加单元之间流动可变电流来产生磁阻效应元件的自由层。