公开(公告)号：US06479899B1

公开(公告)日：2002-11-12

申请号：US09051978

申请日：1998-04-24

Applicant: Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

Inventor： Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

IPC: H01L2348

CPC classification number: H01L27/10808 ,  H01L27/108

Abstract: The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.

公开(公告)号：US5552625A

公开(公告)日：1996-09-03

申请号：US208138

申请日：1994-03-09

Applicant: Susumu Murakami ,  Takuya Fukuda ,  Yoshiteru Shimizu ,  Yoshitaka Sugawara

Inventor： Susumu Murakami ,  Takuya Fukuda ,  Yoshiteru Shimizu ,  Yoshitaka Sugawara

IPC: H01L29/06 ,  H01L29/40

CPC classification number: H01L29/404 ,  H01L29/0626 ,  H01L29/408

Abstract: A semiconductor device has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type contacted by respective first and second electrodes. A semi-insulating layer extends between the first and second electrodes and there is a first insulating layer between the semi-insulating layer and the first semiconductor region. The sheet resistivity of the semi-insulating layer varies, and this improves the high breakdown voltage of the p-n junction of the semiconductor device between the first and second semiconductor layers, by acting as a shield for charges included on a passivation insulation layer covering the semi-insulating layer and the first and second electrodes. Third semiconductor regions, with corresponding third electrodes, extend around, and are spaced from, the second semiconductor region. The third electrodes extend over the parts of the first semiconductor region adjacent the third semiconductor regions, and this also serve to improve the breakdown voltage. The second electrode may also extend over the part of the first semiconductor region adjacent the second semiconductor region to cover the p-n junction therebetween.

Abstract translation: 半导体器件具有第一导电类型的第一半导体区域和与第一和第二电极接触的第二导电类型的第二半导体区域。 半绝缘层在第一和第二电极之间延伸，并且在半绝缘层和第一半导体区之间存在第一绝缘层。 半绝缘层的薄层电阻率变化，这通过充当覆盖半导体层的钝化绝缘层上的电荷的屏蔽来改善第一和第二半导体层之间的半导体器件的pn结的高击穿电压 绝缘层和第一和第二电极。 具有对应的第三电极的第三半导体区域围绕第二半导体区域延伸并且与第二半导体区域间隔开。 第三电极在与第三半导体区域相邻的第一半导体区域的部分上延伸，这也用于提高击穿电压。 第二电极还可以在与第二半导体区域相邻的第一半导体区域的部分上延伸以覆盖它们之间的p-n结。

公开(公告)号：US5496410A

公开(公告)日：1996-03-05

申请号：US29054

申请日：1993-03-10

Applicant: Takuya Fukuda ,  Michio Ohue ,  Kazuo Suzuki

Inventor： Takuya Fukuda ,  Michio Ohue ,  Kazuo Suzuki

IPC: C23C14/54 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/50 ,  C23C16/511 ,  C30B25/14 ,  H01J37/32 ,  H01L21/31 ,  C23C16/00

CPC classification number: H01J37/3244 ,  C23C16/4401 ,  C23C16/4481 ,  C23C16/455 ,  C23C16/511

Abstract: In a plasma processing apparatus which forms a gaseous raw material into a plasma by using electron cyclotron resonance and processes a substrate, leading-edge opening portions of an introduction tube into which a gaseous raw material is introduced are formed in the inner wall surface of the container in such a way that they do not project within the vacuum container. A heater is wound around the introduction pipe so that the opening portions thereof can be heated. With this construction, even if a gaseous raw material which is a liquid or solid at normal temperature and normal pressure is made to flow, the gaseous raw material can be prevented from being liquefied or solidified in the opening portions of the introduction pipe, and the opening portions of the introduction pipe can be prevented from being clogged. In addition, since there are no projections within the vacuum container, the propagation of microwaves is not impeded, making it possible to uniformity process the substrate.

Abstract translation: 在通过使用电子回旋共振将气态原料形成等离子体并处理基板的等离子体处理装置中，在其内壁面上形成导入气体原料的导入管的前端开口部 容器，使得它们不在真空容器内投影。 加热器缠绕在引入管周围，使得其开口部分能够被加热。 利用这种结构，即使使常温常压下的液体或固体的气体原料流动，也可以防止气体原料在导入管的开口部分液化或凝固， 能够防止导入管的开口部堵塞。 此外，由于在真空容器内没有凸起，所以不妨碍微波的传播，能够使基板均匀化。

公开(公告)号：US20140169925A1

公开(公告)日：2014-06-19

申请号：US14123342

申请日：2012-05-16

Applicant: Kenji Bando ,  Takuya Fukuda ,  Akifumi Wakisaka

Inventor： Kenji Bando ,  Takuya Fukuda ,  Akifumi Wakisaka

IPC: B65H3/08

CPC classification number: B65H3/0816 ,  B65G49/069 ,  B65G59/005 ,  B65G59/04 ,  B65G2249/045 ,  B65H3/54 ,  B65H2701/18264

Abstract: In a system for transferring a plate-shaped member with interleaving paper thereon, a suction adhesion device included in a suction adhesion unit includes suction pads that adhere to a surface of a glass plate by suction with interleaving paper in between the surface and the suction pads; an air blowing device blows air between the adhered glass plate and a glass plate positioned below the adhered glass plate; a robot moves the suction adhesion unit; a clamping device includes a pair of pushing members that are arranged at both sides, respectively, of the glass plates and move toward the glass plates to come close to each other; and at least before the suction adhesion unit lifts the adhered glass plate, a controller causes the pair of pushing members to move to push protruding portions of pieces of interleaving paper, the protruding portions protruding from the sides of the glass plates.

Abstract translation: 在用于在其上传送具有交错纸的板状构件的系统中，包括在吸附粘合单元中的吸附粘合装置包括吸附垫，其通过抽吸粘附在玻璃板的表面上，其中交错纸位于表面和吸盘之间 ; 吹气装置在粘附的玻璃板和位于粘附玻璃板下方的玻璃板之间吹送空气; 机器人移动吸附粘合单元; 夹持装置包括分别布置在玻璃板的两侧并朝向玻璃板移动以彼此接近的一对推动构件; 并且至少在吸附粘合单元提升粘附的玻璃板之前，控制器使一对推动构件移动以推动交错纸的突出部分，突出部分从玻璃板的侧面突出。

公开(公告)号：US07588117B2

公开(公告)日：2009-09-15

申请号：US10566996

申请日：2004-04-19

Applicant: Takuya Fukuda

Inventor： Takuya Fukuda

IPC: B60K8/00

CPC classification number: B60L3/0007 ,  B60K1/00 ,  B60L11/1877 ,  B62D21/11 ,  B62D21/155 ,  Y02T10/7005 ,  Y02T10/705

Abstract: A drive motor mounting structure of an electric vehicle, including: a drive motor unit (12) having its front part attached to a vehicle body member (17) in a front part of a vehicle (10) by use of a front motor mount (27); and a rigid robust member (31) disposed in front of and obliquely above the drive motor unit (12), and above and in front of the front motor mount (27).

Abstract translation: 一种电动车辆的驱动电动机安装结构，包括：驱动电动机单元（12），其前部通过使用前电动机支架（10）安装在车辆（10）的前部的车体部件（17） 27）; 以及设置在所述驱动马达单元（12）的前方并且倾斜地位于所述前部马达安装座（27）的前方和之前的刚性坚固构件（31）。

公开(公告)号：US06833331B2

公开(公告)日：2004-12-21

申请号：US10303935

申请日：2002-11-26

Applicant: Masayoshi Saito ,  Katsuhiko Hotta ,  Masayoshi Hirasawa ,  Masayuki Kojima ,  Hiroyuki Uchiyama ,  Hiroyuki Maruyama ,  Takuya Fukuda

Inventor： Masayoshi Saito ,  Katsuhiko Hotta ,  Masayoshi Hirasawa ,  Masayuki Kojima ,  Hiroyuki Uchiyama ,  Hiroyuki Maruyama ,  Takuya Fukuda

IPC: H01L2131

CPC classification number: H01L21/3124 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76831 ,  H01L27/10814 ,  H01L27/10894

Abstract: An SOG film 16 obtained by heat-treating a polysilazan type SOG film at high temperature of about 800° C. is used as a planarized insulating film to be formed on the gate electrode (9; see FIGS. 31 and 32) of a MISFET (Qs, Qn, Qp) A polysilazan SOG film (57) not subjected to such a heat treatment is used as interlayer insulating film arranged among upper wiring layers (54, 55, 56, 62, 63).

Abstract translation: 使用通过在约800℃的高温下热处理聚硅氮烷型SOG膜获得的SOG膜16作为形成在MISFET的栅极（9;参见图31和32）上的平坦化绝缘膜） （Qs，Qn，Qp）将不进行这种热处理的聚硅氮烷SOG膜（57）用作布置在上布线层（54,55,56,62,63）中的层间绝缘膜。

公开(公告)号：US06215144B1

公开(公告)日：2001-04-10

申请号：US09236223

申请日：1999-01-25

Applicant: Masayoshi Saito ,  Yoshitaka Nakamura ,  Hidekazu Goto ,  Keizo Kawakita ,  Satoru Yamada ,  Toshihiro Sekiguchi ,  Isamu Asano ,  Yoshitaka Tadaki ,  Takuya Fukuda ,  Masayuki Suzuki ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hideo Aoki ,  Masayoshi Hirasawa

Inventor： Masayoshi Saito ,  Yoshitaka Nakamura ,  Hidekazu Goto ,  Keizo Kawakita ,  Satoru Yamada ,  Toshihiro Sekiguchi ,  Isamu Asano ,  Yoshitaka Tadaki ,  Takuya Fukuda ,  Masayuki Suzuki ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hideo Aoki ,  Masayoshi Hirasawa

IPC: H01L2972

CPC classification number: H01L21/76855 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/7687 ,  H01L27/10814 ,  H01L27/10885 ,  H01L27/10894 ,  H01L28/40

Abstract: In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta2O5 (tantalum oxide) film 46, the portions of bit lines BL and first-layer interconnect lines 23 to 26 of a peripheral circuit which are in contact with at least an underlying silicon oxide film 28 are formed of a W film, the bit lines BL and the interconnect lines 23 to 26 being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines 23 to 26 and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.

Abstract translation: 在具有电容器的位线结构的DRAM中，信息存储电容元件C的电容绝缘膜由诸如Ta 2 O 5（氧化钽）膜46的高电介质材料形成，位线BL和第一 - 与W膜形成的与外部电路至少底层的氧化硅膜28接触的层间布线23〜26，位线BL和布线23〜26配置在信息存储电容元件C的下方 从而在形成电容绝缘膜时进行的高温热处理方面提高了位线BL与布线23〜26之间界面处的粘附性和氧化硅膜。

公开(公告)号：US09242818B2

公开(公告)日：2016-01-26

申请号：US14123342

申请日：2012-05-16

Applicant: Kenji Bando ,  Takuya Fukuda ,  Akifumi Wakisaka

Inventor： Kenji Bando ,  Takuya Fukuda ,  Akifumi Wakisaka

IPC: B65H3/08 ,  B65G49/06 ,  B65H3/54 ,  B65G59/00 ,  B65G59/04

CPC classification number: B65H3/0816 ,  B65G49/069 ,  B65G59/005 ,  B65G59/04 ,  B65G2249/045 ,  B65H3/54 ,  B65H2701/18264

Abstract: In a system for transferring a plate-shaped member with interleaving paper thereon, a suction adhesion device included in a suction adhesion unit includes suction pads that adhere to a surface of a glass plate by suction with interleaving paper in between the surface and the suction pads; an air blowing device blows air between the adhered glass plate and a glass plate positioned below the adhered glass plate; a robot moves the suction adhesion unit; a clamping device includes a pair of pushing members that are arranged at both sides, respectively, of the glass plates and move toward the glass plates to come close to each other; and at least before the suction adhesion unit lifts the adhered glass plate, a controller causes the pair of pushing members to move to push protruding portions of pieces of interleaving paper, the protruding portions protruding from the sides of the glass plates.

Abstract translation: 在用于在其上传送具有交错纸的板状构件的系统中，包括在吸附粘合单元中的吸附粘合装置包括吸附垫，其通过抽吸粘附在玻璃板的表面上，其中交错纸位于表面和吸盘之间 ; 吹气装置在粘附的玻璃板和位于粘附玻璃板下方的玻璃板之间吹送空气; 机器人移动吸附粘合单元; 夹持装置包括分别布置在玻璃板的两侧并朝向玻璃板移动以彼此靠近的一对推动构件; 并且至少在吸附粘合单元提升粘附的玻璃板之前，控制器使一对推动构件移动以推动交错纸的突出部分，突出部分从玻璃板的侧面突出。

公开(公告)号：US06700152B2

公开(公告)日：2004-03-02

申请号：US10231053

申请日：2002-08-30

Applicant: Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

Inventor： Takuya Fukuda ,  Nobuyoshi Kobayashi ,  Yoshitaka Nakamura ,  Masayoshi Saito ,  Shinichi Fukada ,  Yoshifumi Kawamoto

IPC: H01L27108

CPC classification number: H01L27/10808 ,  H01L27/108

Abstract: The new structure of a memory cell which enables avoiding the problem of a step without increasing the number of processes, the structure of a semiconductor integrated circuit in which a common part of the same substrate in a manufacturing process is increased and the structure of the semiconductor integrated circuit which allows measures for environment obstacles without increasing the number of processes are disclosed. Memory cell structure in which a capacitor is formed in the uppermost layer of plural metal wiring layers by connecting the storage node of the capacitor to a diffusion layer via plugs and pads is adopted. It is desirable that a dielectric film formed in a metal wiring layer under the uppermost layer and a supplementary capacitor composed of a storage node and a plate electrode are connected to the capacitor. It is also desirable that the plate electrode of the capacitor covers the chip.

Abstract translation: 存储单元的新结构能够在不增加处理次数的情况下避免步骤的问题，制造过程中同一基板的公共部分增加的半导体集成电路的结构和半导体的结构 公开了不增加处理次数的环境障碍措施的集成电路。 采用通过将电容器的存储节点经由插头和焊盘连接到扩散层，在多个金属布线层的最上层形成电容器的存储单元结构。 最好将形成在最上层的金属布线层中的电介质膜和由存储节点和平板电极构成的辅助电容器连接到电容器。 还希望电容器的平板电极覆盖芯片。

公开(公告)号：US06399438B2

公开(公告)日：2002-06-04

申请号：US09828201

申请日：2001-04-09

Applicant: Masayoshi Saito ,  Yoshitaka Nakamura ,  Hidekazu Goto ,  Keizo Kawakita ,  Satoru Yamada ,  Toshihiro Sekiguchi ,  Isamu Asano ,  Yoshitaka Tadaki ,  Takuya Fukuda ,  Masayuki Suzuki ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hideo Aoki ,  Masayoshi Hirasawa

Inventor： Masayoshi Saito ,  Yoshitaka Nakamura ,  Hidekazu Goto ,  Keizo Kawakita ,  Satoru Yamada ,  Toshihiro Sekiguchi ,  Isamu Asano ,  Yoshitaka Tadaki ,  Takuya Fukuda ,  Masayuki Suzuki ,  Tsuyoshi Tamaru ,  Naoki Fukuda ,  Hideo Aoki ,  Masayoshi Hirasawa

IPC: H01L218242

CPC classification number: H01L21/76855 ,  H01L21/28518 ,  H01L21/31604 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/7687 ,  H01L27/10814 ,  H01L27/10885 ,  H01L27/10894 ,  H01L28/40

Abstract: In a DRAM having a capacitor-over-bitline structure in which the capacitive insulating film of an information storing capacitive element C is formed of a high dielectric material such as Ta2O5 (tantalum oxide) film 46, the portions of bit lines BL and first-layer interconnect lines 23 to 26 of a peripheral circuit which are in contact with at least an underlying silicon oxide film 28 are formed of a W film, the bit lines BL and the interconnect lines 23 to 26 being arranged below the information storing capacitive element C, whereby the adhesion at the interface between the bit lines BL and the interconnect lines 23 to 26 and the silicon oxide film is improved in terms of high-temperature heat treatment to be performed when the capacitive insulating film is being formed.

Abstract translation: 在具有电容器的位线结构的DRAM中，信息存储电容元件C的电容绝缘膜由诸如Ta 2 O 5（氧化钽）膜46的高电介质材料形成，位线BL和第一 - 与W膜形成的与外部电路至少底层的氧化硅膜28接触的层间布线23〜26，位线BL和布线23〜26配置在信息存储电容元件C的下方 从而在形成电容绝缘膜时进行的高温热处理方面提高了位线BL与布线23〜26之间界面处的粘附性和氧化硅膜。