公开(公告)号：US07750654B2

公开(公告)日：2010-07-06

申请号：US11068973

申请日：2005-03-02

申请人： Katsuya Okumura ,  Shigekazu Komatsu ,  Yuichi Abe ,  Kunihiro Furuya ,  Vincent Vezin ,  Kenichi Kubo

发明人： Katsuya Okumura ,  Shigekazu Komatsu ,  Yuichi Abe ,  Kunihiro Furuya ,  Vincent Vezin ,  Kenichi Kubo

IPC分类号： G01R31/02

CPC分类号： G01R31/2898

摘要： A probe method of this invention includes a step of reducing an electrode of a wafer by using a forming gas, and a step of bringing the electrode and a probe pin into contact with each other in a dry atmosphere. The probe method further includes, prior to a reducing process of an electrode of the object to be tested, placing the object to be tested in an inert gas atmosphere and heating the object to be tested. The reducing process is performed by bringing a reducing gas into contact with the electrode of the object to be tested under atmospheric pressure.

摘要翻译： 本发明的探针方法包括通过使用成形气体来还原晶片的电极的步骤，以及在干燥气氛中使电极和探针彼此接触的步骤。 探针方法还包括在待测试物体的电极的还原过程之前，将待测物体放置在惰性气体气氛中并加热被测物体。 通过在大气压下使还原气体与待测试物体的电极接触来进行还原过程。

公开(公告)号：US20050151549A1

公开(公告)日：2005-07-14

申请号：US11068973

申请日：2005-03-02

申请人： Katsuya Okumura ,  Shigekazu Komatsu ,  Yuichi Abe ,  Kunihiro Furuya ,  Vincent Vezin ,  Kenichi Kubo

发明人： Katsuya Okumura ,  Shigekazu Komatsu ,  Yuichi Abe ,  Kunihiro Furuya ,  Vincent Vezin ,  Kenichi Kubo

IPC分类号： G01R31/02 ,  G01R31/28

CPC分类号： G01R31/2898

摘要： A probe method of this invention includes a step of reducing an electrode of a wafer by using a forming gas, and a step of bringing the electrode and a probe pin into contact with each other in a dry atmosphere. The probe method further includes, prior to a reducing process of an electrode of the object to be tested, placing the object to be tested in an inert gas atmosphere and heating the object to be tested. The reducing process is performed by bringing a reducing gas into contact with the electrode of the object to be tested under atmospheric pressure.

摘要翻译： 本发明的探针方法包括通过使用成形气体来还原晶片的电极的步骤，以及在干燥气氛中使电极和探针彼此接触的步骤。 探针方法还包括在待测试物体的电极的还原过程之前，将待测物体放置在惰性气体气氛中并加热被测物体。 通过在大气压下使还原气体与待测试物体的电极接触来进行还原过程。

公开(公告)号：US20050158477A1

公开(公告)日：2005-07-21

申请号：US11017848

申请日：2004-12-22

申请人： Vincent Vezin ,  Kenichi Kubo ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Vincent Vezin ,  Kenichi Kubo ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： C23C16/455 ,  B05C11/00 ,  C23C4/12 ,  C23C16/00 ,  C23C26/00 ,  C23C26/02 ,  H01L21/285 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76877 ,  C23C4/123 ,  C23C26/00 ,  C23C26/02 ,  H01L21/28556 ,  H01L21/288 ,  H01L21/76843

摘要： A deposition apparatus for supplying a process medium including a medium in a supercritical state and a precursor to a processed substrate so that the processed substrate is deposited on, includes a process vessel, a support stand which is provided in the process vessel, is configured to support the processed substrate, and include a heating part, a medium supply part which is connected to the process vessel via a medium supply path and supplies the process medium to the process vessel, and a medium reflux path configured to reflux the process medium supplied to the process vessel to the medium supply part. The medium supply part includes a first temperature control part configured to control a temperature of the process medium.

摘要翻译： 一种沉积设备，用于将包括处于超临界状态的介质和处理过的衬底的前体的处理介质供应到处理过的衬底沉积在其上，包括处理容器，设置在处理容器中的支撑架， 支撑经处理的基板，并且包括加热部分，介质供应部分，其通过介质供应路径连接到处理容器，并将处理介质供应到处理容器;以及介质回流路径，被配置为回流供给到 过程容器到介质供应部分。 介质供给部包括构造成控制处理介质的温度的第一温度控制部。

公开(公告)号：US20060154482A1

公开(公告)日：2006-07-13

申请号：US10543378

申请日：2003-12-26

申请人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

发明人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76862

摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.

公开(公告)号：US07476619B2

公开(公告)日：2009-01-13

申请号：US10543378

申请日：2003-12-26

申请人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

发明人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76862

摘要： An object of the invention is to make it possible to perform the embedding of a Cu diffusion preventing film and a Cu film to a fine pattern of a high aspect ratio by using a medium of a supercritical state in a manufacturing process of a semiconductor device. The object of the invention is achieved by a substrate processing method comprising a first step of processing a substrate by supplying a first processing medium containing a first medium of a supercritical state onto the substrate, a second step of forming a Cu diffusion preventing film on the substrate by supplying a second processing medium containing a second medium of a supercritical state onto the substrate, and a third step of forming a Cu film on the substrate by supplying a third processing medium containing a third medium of a supercritical state onto the substrate.

摘要翻译： 本发明的目的是通过在半导体器件的制造工艺中使用超临界状态的介质，可以将Cu扩散防止膜和Cu膜嵌入到高纵横比的精细图案中。 本发明的目的是通过一种基板处理方法实现的，该方法包括：第一步骤，通过将含有超临界状态的第一介质的第一处理介质提供到基板上来处理基板;第二步骤，在所述基板上形成Cu扩散防止膜 通过将含有超临界状态的第二介质的第二处理介质供给到所述基板上，以及通过将含有超临界状态的第三介质的第三处理介质供给到所述基板上而在所述基板上形成Cu膜的第三工序来进行。

公开(公告)号：US20050260846A1

公开(公告)日：2005-11-24

申请号：US11190127

申请日：2005-07-27

申请人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

发明人： Eiichi Kondoh ,  Vincent Vezin ,  Kenichi Kubo ,  Yoshinori Kureishi ,  Tomohiro Ohta

IPC分类号： C23C18/02 ,  C23C18/04 ,  C23C18/18 ,  C25D7/12 ,  H01L21/304 ,  H01L21/768 ,  H01L21/20 ,  H01L21/4763

CPC分类号： H01L21/76843 ,  C23C18/1865 ,  C23C18/1882 ,  C23C18/1893 ,  C25D7/12 ,  H01L21/76807 ,  H01L21/76862 ,  H01L21/76877

摘要： A substrate processing method is disclosed that, when forming a copper film on a miniaturized pattern with a copper diffusion prevention film being formed thereon, allows cleaning the copper diffusion prevention film on a substrate by using a supercritical medium, and allows the copper film to be formed by using the supercritical medium while preventing void occurrence and ensuring good adhesiveness with the miniaturized pattern. The substrate processing method includes a first step of supplying a first processing medium including a supercritical medium on a substrate and cleaning a film including a metal on a surface of the substrate; and a second step of supplying a second processing medium including the supercritical medium on the substrate, and forming a copper film.

摘要翻译： 公开了一种基板处理方法，当在其上形成有铜扩散防止膜的小型图案上形成铜膜时，可以通过使用超临界介质来清洗基板上的铜扩散防止膜，并且允许铜膜为 通过使用超临界介质形成，同时防止空隙发生并确保与小型化图案的良好粘附性。 基板处理方法包括：第一步骤，在基板上提供包含超临界介质的第一处理介质，并在基板的表面上清洗包含金属的膜; 以及在基板上供给包含超临界介质的第二处理介质，形成铜膜的第二工序。

公开(公告)号：US06548112B1

公开(公告)日：2003-04-15

申请号：US09442930

申请日：1999-11-18

申请人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

发明人： Joseph T. Hillman ,  Tugrul Yasar ,  Kenichi Kubo ,  Vincent Vezin ,  Hideaki Yamasaki ,  Yasuhiko Kojima ,  Yumiko Kawano ,  Hideki Yoshikawa

IPC分类号： C23C1618

CPC分类号： C23C16/4486

摘要： A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.

摘要翻译： CVD反应器设置有与反应器室一体地连接的前体输送系统。 优选在惰性吹扫气体的帮助下，诸如铜或其它金属 - 有机前体的液体前体在高流量蒸发器的入口处被雾化。 当处于不稳定的液体状态时，液体前体保持在室温或室温以下。 在蒸发器中，引入热量以均匀加热雾化的前体。 蒸发的前体进入扩散器，其将蒸气直接或通过喷头扩散到反应室中。

公开(公告)号：US08622261B2

公开(公告)日：2014-01-07

申请号：US12737727

申请日：2009-08-07

申请人： Motoyuki Itoh ,  Kenichi Kubo

发明人： Motoyuki Itoh ,  Kenichi Kubo

IPC分类号： B22D37/00

CPC分类号： C03C27/08 ,  B23K2101/34 ,  B23K2103/54

摘要： A molten metal supply cylinder for melting a low melting point metallic material in a solid phase and supplying the molten metal material, including a melting section to be directly or indirectly brought into contact with a low melting point metallic material to produce molten metal, and a substantially tubular flow path that has a first opening formed at an end thereof in the melting section and a second opening at the other end thereof and allows the molten metal produced in the melting section to flow. An oxide of the surface layer of the low melting point metallic material is removed by an oxide removing section before the low melting point metallic material is molten in the melting section.

摘要翻译： 一种用于熔化固相中的低熔点金属材料并供应熔融金属材料的熔融金属供应圆筒，其包括直接或间接与低熔点金属材料接触以产生熔融金属的熔化部分，以及 基本上为管状的流动路径，其具有在其熔化部分的端部处形成的第一开口和在其另一端处的第二开口，并允许在熔化部分中产生的熔融金属流动。 低熔点金属材料在熔化部分熔融之前，通过氧化物去除部分除去低熔点金属材料的表面层的氧化物。

公开(公告)号：US20110210483A1

公开(公告)日：2011-09-01

申请号：US12737727

申请日：2009-08-07

申请人： Motoyuki Itoh ,  Kenichi Kubo

发明人： Motoyuki Itoh ,  Kenichi Kubo

IPC分类号： B22D41/01

CPC分类号： C03C27/08 ,  B23K2101/34 ,  B23K2103/54

摘要： An object of the present invention is to provide a molten metal supply cylinder that has a simple configuration if compared with the configurations of the prior art and can suppress mixing of oxide that is produced on the surface of a low melting point metallic material in a solid phase with molten metal.The present invention is a molten metal supply cylinder for melting a low melting point metallic material in a solid phase and supplying the molten metal material, characterized by including a melting section to be directly or indirectly brought into contact with a low melting point metallic material to produce molten metal and a substantially tubular flow path that has a first opening formed at an end thereof in the melting section and a second opening at the other end thereof and allows the molten metal produced in the melting section to flow, wherein the oxide of the surface layer of the low melting point metallic material is removed by an oxide removing section before the low melting point metallic material is molten in the melting section.

摘要翻译： 本发明的目的是提供一种与现有技术的结构相比具有简单结构的熔融金属供给筒，并且可以抑制在固体中的低熔点金属材料的表面上产生的氧化物的混合 与熔融金属相。 本发明是一种用于熔化固相中的低熔点金属材料并供应熔融金属材料的熔融金属供给圆筒，其特征在于包括直接或间接与低熔点金属材料接触的熔化部分， 产生熔融金属和基本上管状的流动路径，其具有在其熔化部分的端部处形成的第一开口和在其另一端处的第二开口，并且允许在熔化部分中产生的熔融金属流动，其中， 低熔点金属材料在熔化部分熔化之前，通过氧化物去除部分除去低熔点金属材料的表面层。

公开(公告)号：US20090324209A1

公开(公告)日：2009-12-31

申请号：US12554780

申请日：2009-09-04

申请人： Kenichi Kubo

发明人： Kenichi Kubo

IPC分类号： G03B17/00

CPC分类号： H04N5/23248 ,  G03B2205/0007 ,  G03B2217/005 ,  H04N5/23261 ,  H04N5/23287

摘要： A photographing system includes a lens apparatus having an image blur correcting device configured to correct and/or reduce image blur caused by vibration, a vibration sensor for detecting vibration applied to the lens apparatus, a position detecting device configured to detect a position change of the lens apparatus, and a controlling device configured to control the image blur correcting device using a detection signal of the position detecting device. The photographing system reduces the influence of low frequency noise of a vibration sensor, while maintaining the quality of a vibration isolation function of the lens apparatus.

摘要翻译： 拍摄系统包括具有图像模糊校正装置的镜头装置，该图像模糊校正装置被配置为校正和/或减少由振动引起的图像模糊;振动传感器，用于检测施加到透镜装置的振动;位置检测装置， 透镜装置，以及控制装置，被配置为使用位置检测装置的检测信号来控制图像模糊校正装置。 拍摄系统在保持透镜装置的隔振功能的质量的同时降低振动传感器的低频噪声的影响。