公开(公告)号：US20110263068A1

公开(公告)日：2011-10-27

申请号：US13087823

申请日：2011-04-15

申请人： KAUSHAL K. SINGH ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

发明人： KAUSHAL K. SINGH ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

IPC分类号： H01L31/18

CPC分类号： H01L31/02366 ,  H01L31/055 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.

摘要翻译： 本发明的实施例一般涉及用于制造这种太阳能电池装置的太阳能电池装置和方法。 在一个实施例中，一种用于形成太阳能电池器件的方法包括在衬底的第一表面上沉积转换层，在衬底的与第一表面相对的第二表面上沉积第一透明导电氧化物层，沉积第一p 在第一透明导电氧化物层之上的掺杂硅层，在第一p掺杂硅层上沉积第一本征硅层，以及在第一本征硅层上沉积第一n掺杂硅层。 该方法还包括在第一n掺杂硅层上沉积第二透明导电氧化物层，以及在第二透明导电氧化物层上沉积导电接触层。

公开(公告)号：US08822259B2

公开(公告)日：2014-09-02

申请号：US13087823

申请日：2011-04-15

申请人： Kaushal K. Singh ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

发明人： Kaushal K. Singh ,  Robert Visser ,  Vijay Parihar ,  Randhir P. S. Thakur

IPC分类号： H01L31/18 ,  H01L31/075 ,  H01L31/076 ,  H01L31/055 ,  H01L31/052 ,  H01L31/0236

CPC分类号： H01L31/02366 ,  H01L31/055 ,  H01L31/056 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/52 ,  Y02E10/548

摘要： Embodiments of the invention generally relate to solar cell devices and methods for manufacturing such solar cell devices. In one embodiment, a method for forming a solar cell device includes depositing a conversion layer over a first surface of a substrate, depositing a first transparent conductive oxide layer over a second surface of the substrate that is opposite the first surface, depositing a first p-doped silicon layer over the first transparent conductive oxide layer, depositing a first intrinsic silicon layer over the first p-doped silicon layer, and depositing a first n-doped silicon layer over the first intrinsic silicon layer. The method further includes depositing a second transparent conductive oxide layer over the first n-doped silicon layer, and depositing an electrically conductive contact layer over the second transparent conductive oxide layer.

摘要翻译： 本发明的实施例一般涉及用于制造这种太阳能电池装置的太阳能电池装置和方法。 在一个实施例中，一种用于形成太阳能电池器件的方法包括在衬底的第一表面上沉积转换层，在衬底的与第一表面相对的第二表面上沉积第一透明导电氧化物层，沉积第一p 在第一透明导电氧化物层之上的掺杂硅层，在第一p掺杂硅层上沉积第一本征硅层，以及在第一本征硅层上沉积第一n掺杂硅层。 该方法还包括在第一n掺杂硅层上沉积第二透明导电氧化物层，以及在第二透明导电氧化物层上沉积导电接触层。

公开(公告)号：US08288683B2

公开(公告)日：2012-10-16

申请号：US12291002

申请日：2008-11-04

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

IPC分类号： B23K26/00

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，该列横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US07674999B2

公开(公告)日：2010-03-09

申请号：US11508781

申请日：2006-08-23

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

IPC分类号： H01L21/324 ,  H01L21/477

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，该列横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US20080210671A1

公开(公告)日：2008-09-04

申请号：US11508781

申请日：2006-08-23

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

IPC分类号： B23K26/00

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，这些行横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US07772134B2

公开(公告)日：2010-08-10

申请号：US12546522

申请日：2009-08-24

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US07429532B2

公开(公告)日：2008-09-30

申请号：US11199592

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

摘要翻译： 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。

公开(公告)号：US20080108210A1

公开(公告)日：2008-05-08

申请号：US11697267

申请日：2007-04-05

申请人： Vijay Parihar ,  Christopher Dennis Bencher ,  Rajesh Kanuri ,  Marlon E. Menezes

发明人： Vijay Parihar ,  Christopher Dennis Bencher ,  Rajesh Kanuri ,  Marlon E. Menezes

IPC分类号： H01L21/425

CPC分类号： H01L21/02115 ,  C23C14/02 ,  C23C14/0605 ,  C23C14/35 ,  H01L21/02266 ,  H01L21/02354 ,  H01L21/2236 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/3146

摘要： A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber having a carbon-containing target overlying the wafer, and furnishing a carrier gas into the chamber. The process further includes generating a wafer bias voltage and applying target source power to the carbon-containing target sufficient to produce ion bombardment of the carbon-containing target. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired extinction coefficient at the laser wavelength.

摘要翻译： 等离子体增强的物理气相沉积工艺在离子注入晶片上沉积无定形碳层，用于具有激光波长的强线束的晶片的动态表面退火。 沉积工艺在低于掺杂剂聚集阈值温度的晶片温度下进行，并且包括将晶片引入到具有覆盖晶片的含碳靶的腔室中，并将载气提供到腔室中。 该方法还包括产生晶片偏置电压并将目标源功率施加到含碳靶足以产生含碳靶的离子轰击。 将晶片偏置电压设定为在激光波长处具有期望的消光系数的被沉积的无定形碳层的水平。

公开(公告)号：US07335611B2

公开(公告)日：2008-02-26

申请号：US11199572

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： B23K26/0738 ,  B23K26/0608 ,  B23K26/0876 ,  B23K26/361 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76877 ,  H01L21/76886

摘要： A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

摘要翻译： 在半导体衬底上形成薄膜结构中的导体的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高方面的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 比例开口，包括垂直侧壁，在第一阻挡层上沉积包括阻挡金属的金属阻挡层，在金属阻挡层上沉积主导体种子种子层并沉积主导体层。 该方法还包括通过以下步骤来退火主导体层：（a）将来自连续波激光器阵列的光引导到至少部分穿过薄膜结构的光线，以及（b）相对于薄的平面 薄膜结构在横向于光线的方向上。 2.根据权利要求1所述的方法，还包括在所述退火步骤之前，在所述主导体层上沉积无定形碳光吸收层。 沉积无定形碳光吸收层的步骤包括将含碳工艺气体引入反应器的反应器室中，该反应器室在反应器的工艺区域中，将RF源功率施加到反应器的外部折入导管以产生可重入环形 RF等离子体电流通过工艺区域并向衬底施加偏置电压。

公开(公告)号：US07312162B2

公开(公告)日：2007-12-25

申请号：US11131941

申请日：2005-05-17

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/31

CPC分类号： C23C16/26 ,  C23C16/505 ,  C23C16/52 ,  H01L21/268 ,  H01L21/3146

摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.

摘要翻译： 在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳工艺气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过 将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。