公开(公告)号：US4261792A

公开(公告)日：1981-04-14

申请号：US932194

申请日：1978-08-09

申请人： Kazuhiko Tsuji ,  Takashi Ohzone ,  Shigetoshi Takayanagi

发明人： Kazuhiko Tsuji ,  Takashi Ohzone ,  Shigetoshi Takayanagi

IPC分类号： H01L21/306 ,  H01L21/3063 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/76888 ,  H01L21/312 ,  H01L21/31687 ,  H01L21/32134

摘要： A metallization or conductor or semiconductor layer formed over one major surface of a semiconductor wafer subjected to anodizing to form an anodized coating which has excellent adherence to the conductor or semiconductor layer and which is used as an etching mask when the conductor or semiconductor layer is etched.

摘要翻译： 在经过阳极化处理的半导体晶片的一个主表面上形成的金属化或导体或半导体层，以形成对导体或半导体层具有优异粘附性的阳极化涂层，并且当导体或半导体层被蚀刻时用作蚀刻掩模 。

公开(公告)号：USRE37228E1

公开(公告)日：2001-06-12

申请号：US08136241

申请日：1993-10-15

申请人： Genshu Fuse ,  Takashi Ohzone

发明人： Genshu Fuse ,  Takashi Ohzone

IPC分类号： H01L21425

CPC分类号： H01L21/265 ,  H01L21/26586 ,  H01L21/76237

摘要： A method of fabricating a semiconductor device comprising a step of forming a trench selectively on a semiconductor substrate, a step of positioning said semiconductor substrate to a first position inclined to a plane vertical to ion beams, a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the first position, a step of positioning said semiconductor substrate to a second position which is different from the first position by rotating it, and a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the second position.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上选择性地形成沟槽的步骤，将所述半导体衬底定位到垂直于垂直于离子束倾斜的第一位置的步骤，通过发射离子束注入离子的步骤 在第一位置处的半导体衬底的沟槽的侧壁，通过旋转将半导体衬底定位到与第一位置不同的第二位置的步骤，以及通过将离子束注入到离子束的步骤 在第二位置处半导体衬底的沟槽的侧壁。

公开(公告)号：US4918027A

公开(公告)日：1990-04-17

申请号：US191788

申请日：1988-04-27

申请人： Genshu Fuse ,  Takashi Ohzone

发明人： Genshu Fuse ,  Takashi Ohzone

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/265 ,  H01L21/26586 ,  H01L21/76237

摘要： A method of fabricating a semiconductor device comprising a step of forming a trench on a semiconductor substrate, a step of positioning the semiconductor substrate in a first position such that the direction of the ion beams is inclined to a plane which is perpendicular to the principal surface of the semiconductor substrate and which is parallel to a first side-wall of the trench, a step of implanting ions into the first side-wall by emitting ion beams onto the first side-wall of the trench of the semiconductor substrate at the first position, a step of rotating the semiconductor substrate about an axis perpendicular to the principal surface thereof to a second position which is different from the first position, a step of implanting ions into a second side-wall by emitting ion beams onto the second side-wall of the trench of the semiconductor substrate at the second position, a step of rotating the semiconductor substrate about the axis to a third position which is different from the first and second positions, a step of implanting ions into a third side-wall by emitting ion beams onto the third side-wall of the trench of the semiconductor substrate at the third position, a step of rotating the semiconductor substrate about the axis to a fourth position which is different from the first, second and third positions, and a step of implanting ions into a fourth side-wall by emitting ion beams onto the fourth side-wall of the trench of the semiconductor substrate at the fourth position.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上形成沟槽的步骤，将半导体衬底定位在第一位置的步骤，使得离子束的方向倾斜于垂直于主表面的平面 并且其平行于沟槽的第一侧壁，通过在第一位置处将离子注入到半导体衬底的沟槽的第一侧壁上而将离子注入到第一侧壁中的步骤 将半导体衬底绕其主表面垂直的轴线旋转到与第一位置不同的第二位置的步骤，通过将离子束发射到第二侧壁上而将离子注入第二侧壁的步骤 在所述第二位置处所述半导体衬底的沟槽的步骤，将所述半导体衬底绕所述轴线旋转到与所述第二位置不同的第三位置 e第一和第二位置，通过在第三位置处将离子束发射到半导体衬底的沟槽的第三侧壁上而将离子注入到第三侧壁中的步骤，将半导体衬底绕轴线旋转的步骤 与第一，第二和第三位置不同的第四位置，以及通过在第四位置将离子束发射到半导体衬底的沟槽的第四侧壁上而将离子注入第四侧壁的步骤。

公开(公告)号：US5250455A

公开(公告)日：1993-10-05

申请号：US899584

申请日：1992-06-18

申请人： Takashi Ohzone ,  Takashi Hori

发明人： Takashi Ohzone ,  Takashi Hori

IPC分类号： D02G3/38 ,  H01L21/28 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/423 ,  H01L29/51 ,  H01L29/792 ,  H01L21/266

CPC分类号： H01L21/28185 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/42332 ,  H01L29/792 ,  H01L29/51 ,  Y10S438/91

摘要： A nonvolatile semiconductor memory comprising a silicon semiconductor substrate and formed thereon a gate insulating film, wherein an ion belonging to the same Group IV in the periodic table as the ion of said silicon semiconductor substrate belongs is shot into said gate insulating film by ion implantation in a dose of not less than 10.sup.16 cm.sup.-2 to form an ion-implanted region therein in such a way that a peak of impurity density of the ion is present at the gate insulating film side from the interface between said semiconductor substrate and said gate insulating film.Also disclosed are an MOS integrated circuit comprising the nonvolatile semiconductor memory, and a method of making the nonvolatile semiconductor memory.

摘要翻译： 一种非晶体半导体存储器，包括硅半导体衬底并在其上形成栅极绝缘膜，其中属于与所述硅半导体衬底的离子属于周期表中的与IV族相同的离子属于所述硅半导体衬底所属的离子，通过离子注入而射入所述栅极绝缘膜 不小于1016cm-2的剂量以形成离子注入区域，使得离子的杂质浓度的峰值存在于栅极绝缘膜侧与所述半导体衬底和所述栅极绝缘体之间的界面 电影。 还公开了包括非易失性半导体存储器的MOS集成电路以及制造非易失性半导体存储器的方法。

公开(公告)号：US5057444A

公开(公告)日：1991-10-15

申请号：US467544

申请日：1990-01-19

申请人： Genshu Fuse ,  Takashi Ohzone

发明人： Genshu Fuse ,  Takashi Ohzone

IPC分类号： H01L21/265 ,  H01L21/762

CPC分类号： H01L21/76237 ,  H01L21/265 ,  H01L21/26586

摘要： A method of fabricating a semiconductor device comprising a step of forming a trench selectively on a semiconductor substrate, a step of positioning said semiconductor substrate to a first position inclined to a plane vertical to ion beams, a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the first position, a step of positioning said semiconductor substrate to a second position which is different from the first position by rotating it, and a step of injecting ions by emitting ion beams to a side-wall of the trench of the semiconductor substrate at the second position.

摘要翻译： 一种制造半导体器件的方法，包括在半导体衬底上选择性地形成沟槽的步骤，将所述半导体衬底定位到垂直于垂直于离子束倾斜的第一位置的步骤，通过发射离子束注入离子的步骤 在第一位置处的半导体衬底的沟槽的侧壁，通过旋转将半导体衬底定位到与第一位置不同的第二位置的步骤，以及通过将离子束注入到离子束的步骤 在第二位置处半导体衬底的沟槽的侧壁。

公开(公告)号：US4861729A

公开(公告)日：1989-08-29

申请号：US088216

申请日：1987-08-24

申请人： Genshu Fuse ,  Takashi Hirao ,  Takashi Ohzone

发明人： Genshu Fuse ,  Takashi Hirao ,  Takashi Ohzone

IPC分类号： H01L21/223

CPC分类号： H01L21/2236

摘要： A method in which in order to dope impurities, with excellent controllability, into a sidewall of a trench formed in a semiconductor substrate, plasma is generated in a gas including the impurities and the semiconductor substrate is disposed in or near the plasma, so that the impurities may be doped into the sidewall of the trench uniformly and at high precision of concentration control; wherein one of a duluted B.sub.2 H.sub.6 gas and diluted AsH.sub.3 gas is chosen as the gas of the plasma, whereby one of B and As as the impurities directly enters the sidewall of the trench without first passing through a film.

摘要翻译： 为了将具有优异的可控性的杂质掺杂到在半导体衬底中形成的沟槽的侧壁中的方法中，在包括杂质的气体中产生等离子体，并且半导体衬底设置在等离子体中或其附近，使得 杂质可以均匀地并且以高精度的浓度控制被掺杂到沟槽的侧壁中; 其中选择一个掺杂的B2H6气体和稀释的AsH3气体作为等离子体的气体，由此作为杂质的B和As中的一个直接进入沟槽的侧壁，而不首先通过膜。