公开(公告)号：US09190264B2

公开(公告)日：2015-11-17

申请号：US13618338

申请日：2012-09-14

Applicant: Kazuhiro Yuasa ,  Naonori Akae ,  Masato Terasaki

Inventor： Kazuhiro Yuasa ,  Naonori Akae ,  Masato Terasaki

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/67 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/022 ,  C23C16/345 ,  C23C16/402 ,  C23C16/45529 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

Abstract: A semiconductor manufacturing method includes forming an oxide film on a substrate by performing a first cycle a predetermined number of times, including supplying a first source gas, an oxidizing gas and a reducing gas to the substrate heated to a first temperature in a process container under a sub-atmospheric pressure; forming a seed layer on a surface of the oxide film by supplying a nitriding gas to the substrate in the process container, the substrate being heated to a temperature equal to or higher than the first temperature and equal to or lower than a second temperature; and forming a nitride film on the seed layer formed on the surface of the oxide film by performing a second cycle a predetermined number of times, including supplying a second source gas and the nitriding gas to the substrate heated to the second temperature in the process container.

Abstract translation: 半导体制造方法包括在基板上形成规定次数的第一循环的氧化膜，该第一循环包括向处理容器内加热到第一温度的基板供给第一源气体，氧化气体和还原气体， 低于大气压; 通过向所述处理容器中的所述基板供给氮化气体，在所述氧化物膜的表面上形成种子层，将所述基板加热至所述第一温度以上且第二温度以下的温度; 并且通过进行预定次数的第二循环，在形成在氧化物膜的表面上的种子层上形成氮化物膜，包括将第二源气体和氮化气体供给到处理容器中加热到第二温度的衬底 。

公开(公告)号：US20090170338A1

公开(公告)日：2009-07-02

申请号：US12225432

申请日：2007-08-03

Applicant: Masato Terasaki ,  Shinya Morita ,  Manabu Izumi

Inventor： Masato Terasaki ,  Shinya Morita ,  Manabu Izumi

IPC: H01L21/30 ,  B05C11/00

CPC classification number: H01L21/67109 ,  C23C16/4412 ,  C23C16/54

Abstract: An object of the invention is to provide a substrate treatment device that can lengthen the maintenance cycle, and prevent any by-product from falling on substrates even if it is accumulated, and a manufacturing method of such a substrate treatment device, and an embodiment of the invention is directed, comprising: a treatment chamber that subjects a substrate to a treatment while keeping hold of it by a substrate retention member; a reaction tube that configures the treatment chamber; a heating device that is disposed around the reaction tube for heating the treatment chamber; and an exhaust tube that is linked to the reaction tube on an upper side than the substrate inside of the treatment chamber and is extended downward from the heating device, and exhausts a gas inside of the reaction tube in which an extension portion as a result of the extension is disposed away from the reaction tube.

Abstract translation: 本发明的目的是提供一种能够延长维护周期的基板处理装置，即使在堆积时也能够防止任何副产物落在基板上，以及这种基板处理装置的制造方法以及 本发明涉及包括：处理室，其在保持基板保持构件的同时对基板进行处理; 构成处理室的反应管; 设置在反应管周围用于加热处理室的加热装置; 以及排气管，其在处理室的内侧的上侧与反应管连接并从加热装置向下延伸，并且排出反应管内部的气体，其中延伸部由于 延伸部远离反应管设置。

公开(公告)号：US06194037B1

公开(公告)日：2001-02-27

申请号：US08774223

申请日：1996-12-27

Applicant: Masato Terasaki ,  Kazunori Tsutsuguchi

Inventor： Masato Terasaki ,  Kazunori Tsutsuguchi

IPC: H05H124

CPC classification number: C23C16/402 ,  C23C16/5096 ,  C23C16/52

Abstract: Disclosed is a plasma processing method which comprises the steps of: performing plasma processing for a substrate placed on a substrate table in a processing chamber through use of plasma generated by applying an RF power to a gas or gases within the processing chamber while maintaining the pressure within the chamber at a predetermined pressure by feeding the gas or gases into the chamber and by evacuating the gas or gases from the chamber; lifting the substrate off the substrate table after stopping the application of the RF power to terminate the plasma process, while continuing the feeding and evacuating the gas or gases to maintain the inside of the chamber at the predetermined pressure: evacuating the chamber to a high vacuum after lifting off the substrate; and transferring the substrate out of the chamber.

Abstract translation: 公开了一种等离子体处理方法，其包括以下步骤：通过使用通过将RF功率施加到处理室内的气体或气体而产生的等离子体，同时保持压力，对放置在处理室中的衬底台上的衬底进行等离子体处理 通过将气体或气体供给到室中并且通过从气室排出气体或气体而在预定压力下在室内; 在停止施加RF功率以终止等离子体处理之后，将基板从基板上提起，同时继续进料和排空气体或气体以将室内保持在预定压力：将室抽真空至高真空 提起底物后; 并将衬底转移出腔室。

公开(公告)号：US20140099797A1

公开(公告)日：2014-04-10

申请号：US14123576

申请日：2012-05-17

Applicant: Masato Terasaki

Inventor： Masato Terasaki

IPC: H01L21/02 ,  C23C16/52

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/4488 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228

Abstract: A silicon oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a silicon-containing layer on the substrate by supplying a source gas containing silicon, to the substrate housed in a processing chamber and heated to a first temperature; and oxidizing and changing the silicon-containing layer formed on the substrate, to a silicon oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and heated to a second temperature equal to the first temperature or higher than the first temperature.

Abstract translation: 在衬底上形成具有特定膜厚度的氧化硅膜，通过交替地重复：通过将含硅的源气体供给到容纳在处理室中的衬底并加热至第一温度而在衬底上形成含硅层 ; 以及在低于大气压的压力气氛下，通过向加热室中加热到第一温度的基板供应含有氧的反应性物质，将形成在衬底上的含硅层氧化并改变为氧化硅层， 通过在预反应室内在小于大气压的压力气氛下引起含氧气体和含氢气体之间的反应而产生，并加热至等于第一温度或高于第一温度的第二温度 。

公开(公告)号：US09006116B2

公开(公告)日：2015-04-14

申请号：US14123576

申请日：2012-05-17

Applicant: Masato Terasaki

Inventor： Masato Terasaki

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/40 ,  C23C16/448 ,  C23C16/455 ,  C23C16/56 ,  C23C16/52

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/4488 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228

Abstract: A silicon oxide film is formed, having a specific film thickness on a substrate by alternately repeating: forming a silicon-containing layer on the substrate by supplying a source gas containing silicon, to the substrate housed in a processing chamber and heated to a first temperature; and oxidizing and changing the silicon-containing layer formed on the substrate, to a silicon oxide layer by supplying reactive species containing oxygen to the substrate heated to the first temperature in the processing chamber under a pressure atmosphere of less than atmospheric pressure, the reactive species being generated by causing a reaction between an oxygen-containing gas and a hydrogen-containing gas in a pre-reaction chamber under a pressure atmosphere of less than atmospheric pressure and heated to a second temperature equal to the first temperature or higher than the first temperature.

Abstract translation: 在衬底上形成具有特定膜厚度的氧化硅膜，通过交替地重复：通过将含硅的源气体供给到容纳在处理室中的衬底并加热至第一温度而在衬底上形成含硅层 ; 以及在低于大气压的压力气氛下，通过向加热室中加热到第一温度的基板供应含有氧的反应性物质，将形成在衬底上的含硅层氧化并改变为氧化硅层， 通过在预反应室内在小于大气压的压力气氛下引起含氧气体和含氢气体之间的反应而产生，并加热至等于第一温度或高于第一温度的第二温度 。

公开(公告)号：US07795157B2

公开(公告)日：2010-09-14

申请号：US12225432

申请日：2007-08-03

Applicant: Masato Terasaki ,  Shinya Morita ,  Manabu Izumi

Inventor： Masato Terasaki ,  Shinya Morita ,  Manabu Izumi

IPC: H01L21/31

CPC classification number: H01L21/67109 ,  C23C16/4412 ,  C23C16/54

Abstract: An object of the invention is to provide a substrate treatment device that can lengthen the maintenance cycle, and prevent any by-product from falling on substrates even if it is accumulated, and a manufacturing method of such a substrate treatment device, and an embodiment of the invention is directed, comprising: a treatment chamber that subjects a substrate to a treatment while keeping hold of it by a substrate retention member; a reaction tube that configures the treatment chamber; a heating device that is disposed around the reaction tube for heating the treatment chamber; and an exhaust tube that is linked to the reaction tube on an upper side than the substrate inside of the treatment chamber and is extended downward from the heating device, and exhausts a gas inside of the reaction tube in which an extension portion as a result of the extension is disposed away from the reaction tube.

Abstract translation: 本发明的目的是提供一种能够延长维护周期的基板处理装置，即使在堆积时也能够防止任何副产物落在基板上，以及这种基板处理装置的制造方法以及 本发明涉及包括：处理室，其在保持基板保持构件的同时对基板进行处理; 构成处理室的反应管; 设置在反应管周围用于加热处理室的加热装置; 以及排气管，其在处理室的内侧的上侧与反应管连接并从加热装置向下延伸，并且排出反应管内部的气体，在该反应管内具有由于 延伸部远离反应管设置。