公开(公告)号：US20090285743A1

公开(公告)日：2009-11-19

申请号：US12309626

申请日：2007-10-26

申请人： Kazuki Mizushima ,  Yuji Shimizu

发明人： Kazuki Mizushima ,  Yuji Shimizu

IPC分类号： C01B33/107 ,  F28D15/00

CPC分类号： C01B33/1071

摘要： A method and an apparatus for producing trichlorosilane comprising: producing reaction product gas containing trichlorosilane and hydrogen chloride by initiating a reaction of silicon tetrachloride and hydrogen at 900° C. to 1900° C.; preventing a reverse reaction to silicon tetrachloride and by-production of a polymer by cooling the reaction product gas discharged from the reaction chamber to 300° C. to 800° C., thereby optimizing the cooling rate of the reaction gas; preheating at least one of the silicon tetrachloride and the hydrogen introduced into the reaction chamber 2 by exchanging heat with the thus cooled reaction product gas.

摘要翻译： 其包括：通过在900℃至1900℃下引发四氯化硅和氢气的反应来生产含有三氯硅烷和氯化氢的反应产物气体; 通过将从反应室排出的反应产物气体冷却至300℃至800℃，防止对四氯化硅的反向反应和副产物的聚合物，从而优化反应气体的冷却速度; 通过与如此冷却的反应产物气体交换热量来预热引入到反应室2中的四氯化硅和氢气中的至少一种。

公开(公告)号：US08372346B2

公开(公告)日：2013-02-12

申请号：US13047214

申请日：2011-03-14

申请人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

发明人： Kazuki Mizushima ,  Wataru Saiki ,  Naoya Murakami ,  Masami Miyake

IPC分类号： B01J19/00 ,  C01B33/08

CPC分类号： B01J19/243 ,  B01J2219/00135 ,  B01J2219/00155 ,  B01J2219/1928 ,  C01B33/1071

摘要： In an apparatus for producing trichlorosilane, an internal space of a reaction chamber is partitioned in a radial direction by first walls running along a circumferential direction, and is partitioned into multiple spaces by second walls which extend in a direction crossing the circumferential direction. Upper portions or lower portions of the first walls and the second walls are formed with a communicating portion which circulates a raw material gas to be introduced, toward a central portion of a reaction chamber while the raw material gas goes through the small spaces sequentially and is turned up and down, heaters are installed in the small spaces, one of small spaces on both sides of the second walls is used as a small space for a upward flow passage, and the other is used as a small space for a downward flow passage, and the small spaces communicate with each other via the communication portion of the second walls.

摘要翻译： 在三氯硅烷的制造装置中，反应室的内部空间沿着圆周方向的第一壁在径向上分隔开，并且沿与圆周方向交叉的方向延伸的第二壁分隔成多个空间。 第一壁和第二壁的上部或下部形成有将原料气体引入循环的连通部，朝向反应室的中心部分，同时原料气体依次通过小空间，并且是 上下放置，加热器安装在小空间中，第二壁两侧的小空间之一用作向上流动通道的小空间，另一个用作向下流动通道的小空间 并且小空间经由第二壁的连通部彼此连通。

公开(公告)号：US20110052914A1

公开(公告)日：2011-03-03

申请号：US12805926

申请日：2010-08-25

申请人： Makoto Urushihara ,  Kazuki Mizushima

发明人： Makoto Urushihara ,  Kazuki Mizushima

IPC分类号： B32B9/00 ,  H05B6/02 ,  B05C11/00 ,  B05C21/00

CPC分类号： C23C16/52 ,  C01B33/035 ,  C23C16/24 ,  C23C16/45557 ,  C23C16/4587 ,  C23C16/46 ,  Y10T428/2964

摘要： A polycrystalline silicon producing method with preventing meltdown and maintaining a high growing rate and a high yield by increasing temperature of raw material gas before supplying them to a reactor in a high pressure state so as to lower convection heat transfer from a silicon rod, including: supplying electric current to a silicon seed rod in a reactor to make the silicon seed rod to generate heat; and supplying a large amount of preheated raw material gas including chlorosilanes to the silicon seed rod in the reactor in the high pressure state.

摘要翻译： 一种多晶硅制造方法，其特征在于，在将原料气体供给到高压状态的反应器之前，通过增加原料气体的温度，防止熔融，保持高生长速度和高产率，从而降低从硅棒的对流传热，包括： 向反应器中的硅籽晶棒提供电流以使硅籽晶棒产生热量; 在高压状态下向反应器中的硅籽晶棒供给大量含有氯硅烷的预热原料气体。

公开(公告)号：US20090324477A1

公开(公告)日：2009-12-31

申请号：US12309627

申请日：2007-10-26

申请人： Kazuki Mizushima ,  Makoto Urushihara

发明人： Kazuki Mizushima ,  Makoto Urushihara

IPC分类号： C01B33/107 ,  F28D21/00 ,  F28D5/00

CPC分类号： C01B33/1071

摘要： An apparatus comprising: a reaction chamber 2 into which silicon tetrachloride and hydrogen is introduced for producing a reaction product gas containing trichlorosilane and hydrogen chloride by a reductive reaction at a temperature of not lower than 800° C.; a reaction product gas discharging device 4 that discharges the reaction product gas in the reaction chamber 2 to the outside; a cooling gas introducing device 5 that mixes hydrogen, silicon tetrachloride, or hydrogen chloride in the reaction product gas being discharged by the reaction product gas discharging device 4 to cool the reaction product gas.

摘要翻译： 一种装置，包括：反应室2，其中引入四氯化硅和氢气，以在不低于800℃的温度下通过还原反应制备含有三氯硅烷和氯化氢的反应产物气体; 反应产物气体排出装置4，其将反应室2中的反应产物气体排出到外部; 在由反应产物气体排出装置4排出的反应产物气体中混合氢，四氯化硅或氯化氢的冷却气体导入装置5，以冷却反应产物气体。

公开(公告)号：US07056789B2

公开(公告)日：2006-06-06

申请号：US10487526

申请日：2002-08-23

申请人： Ichiro Shiono ,  Kazuki Mizushima ,  Kenji Yamaguchi

发明人： Ichiro Shiono ,  Kazuki Mizushima ,  Kenji Yamaguchi

IPC分类号： H01L21/336

CPC分类号： H01L29/165 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/1054 ,  H01L29/66916

摘要： The present invention relates to a semiconductor substrate production method, field effect transistor production method, semiconductor substrate and field effect transistor which, together with having low penetrating dislocation density and low surface roughness, prevent worsening of surface and interface roughness during heat treatment of a device production process and so forth. A production method of a semiconductor substrate W, in which SiGe layers 2 and 3 are formed on an Si substrate 1, is comprised of a heat treatment step in which heat treatment is performed either during or after the formation of the SiGe layers by epitaxial growth, at a temperature that exceeds the temperature of the epitaxial growth, and a polishing step in which irregularities in the surface formed during the heat treatment are removed by polishing following formation of the SiGe layers.

摘要翻译： 半导体衬底制造方法，场效应晶体管制造方法，半导体衬底和场效应晶体管本发明涉及一种具有低穿透位错密度和低表面粗糙度的半导体衬底和场效应晶体管，防止器件热处理期间的表面变差和界面粗糙度 生产过程等等。 在Si衬底1上形成SiGe层2和3的半导体衬底W的制造方法包括热处理步骤，其中通过外延生长在SiGe层形成期间或之后进行热处理 ，在超过外延生长温度的温度下，以及抛光步骤，其中通过在形成SiGe层之后通过研磨去除在热处理期间形成的表面的凹凸。

公开(公告)号：US09994455B2

公开(公告)日：2018-06-12

申请号：US12451666

申请日：2008-05-23

申请人： Wataru Saiki ,  Kazuki Mizushima ,  Makoto Urushihara

发明人： Wataru Saiki ,  Kazuki Mizushima ,  Makoto Urushihara

IPC分类号： C01B33/107 ,  C01B33/027

CPC分类号： C01B33/1071 ,  C01B33/027

摘要： A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C.

公开(公告)号：US09409374B2

公开(公告)日：2016-08-09

申请号：US13578162

申请日：2011-03-23

申请人： Kazuhito Ohira ,  Kazuki Mizushima

发明人： Kazuhito Ohira ,  Kazuki Mizushima

IPC分类号： B05C1/00 ,  B31F1/28

CPC分类号： B31F1/2818

摘要： A device for gluing of a double facer includes a glue bath containing glue; a gluing roll immersed in and coated with the glue; a doctor roll adjusting the glue on the gluing roll to a predetermined thickness, transferred to a single faced corrugated cardboard; a swing roll disposed at an upstream portion of a transferring direction of the corrugated cardboard; and a moving device that moves the swing roll in a direction that the single faced corrugated cardboard is wrapped around the gluing roll. The swing roll is wrapped around the single faced corrugated cardboard, and the number of flute tips of the single faced corrugated cardboard that are concurrently contacting with the gluing roll and applied with the glue is adjusted by moving only the swing roll in such a direction that crosses a sheet face of the single faced corrugated cardboard passing through the nip.

摘要翻译： 用于胶合双面的装置包括含有胶的胶浴; 浸胶并涂上胶水的胶合辊; 刮刀将胶合辊上的胶水调整到预定厚度，转移到单面瓦楞纸板上; 布置在瓦楞纸板的传送方向的上游部分的摆动辊; 以及使所述摆动辊沿着所述单面瓦楞纸板缠绕在所述胶合辊上的方向移动的移动装置。 摆动卷绕在单面瓦楞纸板周围，同时与胶合辊接触并施加胶水的单面瓦楞纸板的槽纹尖数量通过仅使摆动辊沿着如下方向调节： 穿过通过辊隙的单面瓦楞纸板的纸面。

公开(公告)号：US20100178230A1

公开(公告)日：2010-07-15

申请号：US12451666

申请日：2008-05-23

申请人： Wataru Saika ,  Kazuki Mizushima ,  Makoto Urushihara

发明人： Wataru Saika ,  Kazuki Mizushima ,  Makoto Urushihara

IPC分类号： C01B33/107 ,  B01J8/00

CPC分类号： C01B33/1071 ,  C01B33/027

摘要： A method of manufacturing trichlorosilane includes a conversion reaction process (first reaction process) for producing a first reaction product gas, which contains trichlorosilane, dichlorosilylene, hydrogen chloride, and high-order silane compounds, by performing a conversion reaction of silicon tetrachloride and hydrogen, which are raw materials, in a first temperature range that is equal to or higher than 1000° C. and equal to or lower than 1900° C.; a first cooling process for cooling the first reaction product gas to a temperature of 950° C. or lower within 1 sec (except that the first reaction product gas is cooled to a temperature lower than 600° C. within 0.01 sec); a second reaction process for maintaining the temperature of the first reaction product gas in a second temperature range, which is equal to or higher than 600° C. and equal to or lower than 950° C., during the time that is equal to or more than 0.01 sec and equal to or less than 5 sec; and a second cooling process for cooling a second reaction product gas, which has been subjected to the second reaction process, to a temperature lower than 600° C.

摘要翻译： 制造三氯硅烷的方法包括：通过进行四氯化硅和氢的转化反应，生成含有三氯硅烷，二氯二亚甲基，氯化氢和高级硅烷化合物的第一反应产物气体的转化反应方法（第一反应方法） 在等于或高于1000℃等于或低于1900℃的第一温度范围内的原料; 用于将第一反应产物气体在1秒钟内冷却到950℃以下的第一冷却方法（第一反应产物气体在0.01秒内冷却至低于600℃的温度）; 第二反应方法，用于在等于或等于或等于或等于或等于或等于或等于或等于或等于或等于或等于或等于950℃的时间内将第一反应产物气体的温度维持在等于或高于600℃的第二温度范围内 大于0.01秒且等于或小于5秒; 以及将经过第二反应处理的第二反应产物气体冷却至低于600℃的第二冷却工序。

公开(公告)号：US06569534B2

公开(公告)日：2003-05-27

申请号：US09797881

申请日：2001-03-05

申请人： Kenji Yamaguchi ,  Kazuki Mizushima

发明人： Kenji Yamaguchi ,  Kazuki Mizushima

IPC分类号： B32B700

CPC分类号： H01L33/08 ,  H01L31/032 ,  H01L33/34 ,  Y02E10/547 ,  Y10S428/917 ,  Y10T428/256

摘要： An optical material including a crystalline silicon and FexSi2 in the form of dots, islands, or a film is provided. The FexSi2 has a symmetrical monoclinic crystalline structure belonging to the P21/c space group and is synthesized at the surface or in the interior of the crystalline silicon. The monoclinic structure corresponds to a deformed structure of &bgr;-FeSi2 generated by heteroepitaxial stress between the {110} plane of the FexSi2 and the {111} plane of the crystalline silicon. The value of x is 0.85≦x≦1.1. An optical element using the optical material is also provided.

摘要翻译： 提供了包括晶体硅和FexSi2的光学材料，其形式为点，岛或膜。 FexSi2具有属于P21 / C空间群的对称单斜晶体结构，并在晶体硅的表面或内部合成。 单晶结构对应于由FexSi2的{110}平面和晶体硅的{111}面之间的异质外延应力产生的β-FeSi2的变形结构。 x的值为0.85 <= x <= 1.1。 还提供了使用光学材料的光学元件。

公开(公告)号：US06525338B2

公开(公告)日：2003-02-25

申请号：US09917923

申请日：2001-07-31

申请人： Kazuki Mizushima ,  Ichiro Shiono ,  Kenji Yamaguchi

发明人： Kazuki Mizushima ,  Ichiro Shiono ,  Kenji Yamaguchi

IPC分类号： H01L2906

CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L29/66916

摘要： A semiconductor substrate, a field effect transistor, a method of forming a SiGe layer and a method of forming a strained Si layer using the same, and a method of manufacturing a field effect transistor are provided, which enable the threading dislocation density of the SiGe layer to be reduced and the surface roughness to be minimized. On top of a Si substrate 1 is provided a SiGe buffer layer 2, 12 constructed of a plurality of laminated layers comprising alternating layers of a SiGe gradient composition layer 2a, 12a in which the Ge composition ratio increases gradually from the Ge composition ratio of the base material, and a SiGe constant composition layer 2b, 12b which is provided on top of the gradient composition layer and in which the Ge composition ratio is equal to that of the upper surface of the gradient composition layer.