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公开(公告)号：US20110233063A1
公开(公告)日：2011-09-29
申请号：US13063638
申请日：2009-09-11
IPC分类号： C25D1/10
摘要： A mold is fabricated with a cavity formed in an insulating layer formed so as to be placed on an upper surface of a conductive base material. This mold is disposed in an electrolyte bath to be applied with a voltage, and a metal is electrodeposited on the bottom surface of the cavity to electroform a metal-formed product in the cavity. In this electrodepositing process, when the width of the cavity is taken as W and a vertical height of a head space between an upper opening of the cavity and an upper surface of a metal layer is taken as H, the growth of the metal layer is stopped so that the height H of the head space left above the metal layer satisfies: H≧W/2.85 where 300 μm≦W; H≧W/3.75 where 200 μm≦W
摘要翻译： 制造具有形成在绝缘层中的空腔的模具，其形成为放置在导电基材的上表面上。 将该模具设置在电解液浴中以施加电压，并且将金属电沉积在空腔的底表面上以电铸模腔中的金属成形产品。 在这种电沉积过程中，当空腔的宽度取为W并且空腔的上开口和金属层的上表面之间的顶部空间的垂直高度被取为H时，金属层的生长为 停止，使得留在金属层上方的顶部空间的高度H满足：H≥W/ 2.85，其中300μm和nlE; W; H≥W/ 3.75，其中200μm＆lt; NE; W <300μm; H≥W/ 4，其中100μm和nlE; W <200μm; 和H≥W/ 10，其中W <100μm。
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公开(公告)号：US09085828B2
公开(公告)日：2015-07-21
申请号：US13063638
申请日：2009-09-11
摘要： A mold is fabricated with a cavity formed in an insulating layer formed so as to be placed on an upper surface of a conductive base material. This mold is disposed in an electrolyte bath to be applied with a voltage, and a metal is electrodeposited on the bottom surface of the cavity to electroform a metal-formed product in the cavity. In this electrodepositing process, when the width of the cavity is taken as W and a vertical height of a head space between an upper opening of the cavity and an upper surface of a metal layer is taken as H, the growth of the metal layer is stopped so that the height H of the head space left above the metal layer satisfies: where 300 μm≦W; H≧W/3.75 where 200 μm≦W
摘要翻译： 制造具有形成在绝缘层中的空腔的模具，其形成为放置在导电基材的上表面上。 将该模具设置在电解液浴中以施加电压，并且将金属电沉积在空腔的底表面上以电铸模腔中的金属成形产品。 在这种电沉积过程中，当空腔的宽度取为W并且空腔的上开口和金属层的上表面之间的顶部空间的垂直高度被取为H时，金属层的生长为 停止，使得留在金属层上方的顶部空间的高度H满足：其中300μm＆nlE; W; H≥W/ 3.75，其中200μm＆lt; NE; W <300μm; H≥W/ 4，其中100μm和nlE; W <200μm; 和H≥W/ 10，其中W <100μm。
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公开(公告)号：US20080237050A1
公开(公告)日：2008-10-02
申请号：US12057903
申请日：2008-03-28
IPC分类号： C25D1/10
CPC分类号： C25D1/10
摘要： The present invention provides an electrocasting method by which the shape of the surface opposite to the surface to be electrodeposited on the mold can be controlled. A molded metal article is electrocast by forming an insulating layer on the side wall faces of a cavity and the outer wall face of a conductive mold in which the cavity is formed, placing the mold in an electrolysis tank and applying voltage, electrodepositing metal on the bottom face of the cavity, and growing the metal layer in the cavity so as to leave a space having a height of at least one-third the width of the cavity.
摘要翻译： 本发明提供了一种电铸方法，通过该方式可以控制与电沉积在模具上的表面相对的表面的形状。 模制金属制品通过在空腔的侧壁面上形成绝缘层和形成空腔的导电模具的外壁面进行电铸，将模具放置在电解槽中并施加电压，将电沉积金属 并且在空腔中生长金属层，以便留下高度至少为空腔宽度三分之一的空间。
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公开(公告)号：US07908098B2
公开(公告)日：2011-03-15
申请号：US12057903
申请日：2008-03-28
IPC分类号： G01F17/00
CPC分类号： C25D1/10
摘要： The present invention provides an electrocasting method by which the shape of the surface opposite to the surface to be electrodeposited on the mold can be controlled. A molded metal article is electrocast by forming an insulating layer on the side wall faces of a cavity and the outer wall face of a conductive mold in which the cavity is formed, placing the mold in an electrolysis tank and applying voltage, electrodepositing metal on the bottom face of the cavity, and growing the metal layer in the cavity so as to leave a space having a height of at least one-third the width of the cavity.
摘要翻译： 本发明提供了一种电铸方法，通过该方式可以控制与电沉积在模具上的表面相对的表面的形状。 模制金属制品通过在空腔的侧壁面上形成绝缘层和形成空腔的导电模具的外壁面进行电铸，将模具放置在电解槽中并施加电压，将电沉积金属 并且在空腔中生长金属层，以便留下高度至少为空腔宽度三分之一的空间。
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公开(公告)号：US08696392B2
公开(公告)日：2014-04-15
申请号：US13264769
申请日：2011-03-24
IPC分类号： H01R13/02
CPC分类号： H01R13/03 , H01R12/79 , H01R13/2407 , H01R43/16
摘要： A contact includes a plate with a width that ranges from 0.1 mm or more to 1 mm or less, and a stress concentrated place, where a surface roughness (Ra) on the stress concentrated place is 0.2 μm or less. When samples whose surface roughness Ra is 0.040 μm, 0.080 μm, 0.120 μm, and 0.180 μm were used to study a number of repetitive fracture times, as the surface roughness Ra was smaller, the number of repetitive fracture times became larger. Particularly, it is found that the surface roughness Ra may be 0.200 μm or less in order to satisfy 3000 times as a number of operating times of the battery connector. Further, the surface roughness Ra may be 0.080 μm or less in order to satisfy 6000 times as the number of operating times when a safety factor is 2.
摘要翻译： 触点包括宽度为0.1mm以上至1mm以下的板，应力集中的应力集中的位置为0.2μm以下。 使用表面粗糙度Ra为0.040μm，0.080μm，0.120μm，0.180μm的样品，研究重复断裂次数，随着表面粗糙度Ra越小，重复断裂次数越大。 特别地，发现表面粗糙度Ra可以为0.200μm以下，以满足电池连接器的操作次数的3000倍。 此外，为了使安全系数为2的操作次数的6000倍，表面粗糙度Ra可以为0.080μm以下。
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公开(公告)号：US20120238158A1
公开(公告)日：2012-09-20
申请号：US13264769
申请日：2011-03-24
CPC分类号： H01R13/03 , H01R12/79 , H01R13/2407 , H01R43/16
摘要： A contact includes a plate with a width that ranges from 0.1 mm or more to 1 mm or less, and a stress concentrated place, where a surface roughness (Ra) on the stress concentrated place is 0.2 μm or less. When samples whose surface roughness Ra is 0.040 μm, 0.080 μm, 0.120 μm, and 0.180 μm were used to study a number of repetitive fracture times, as the surface roughness Ra was smaller, the number of repetitive fracture times became larger. Particularly, it is found that the surface roughness Ra may be 0.200 μm or less in order to satisfy 3000 times as a number of operating times of the battery connector. Further, the surface roughness Ra may be 0.080 μm or less in order to satisfy 6000 times as the number of operating times when a safety factor is 2.
摘要翻译： 触点包括宽度为0.1mm以上至1mm以下的板，应力集中的应力集中的位置为0.2μm以下。 使用表面粗糙度Ra为0.040μm，0.080μm，0.120μm，0.180μm的样品来研究重复断裂次数，随着表面粗糙度Ra越小，重复断裂次数越大。 特别地，发现表面粗糙度Ra可以为0.200μm以下，以满足电池连接器的操作次数的3000倍。 此外，为了使安全系数为2的操作次数的6000倍，表面粗糙度Ra可以为0.080μm以下。
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公开(公告)号：US08124406B2
公开(公告)日：2012-02-28
申请号：US12979823
申请日：2010-12-28
申请人： Kazuma Tomizuka , Hitoshi Yoshida , Kazunori Hanaoka , Mitsuo Oshimura , Isao Ishida , Yoshimi Kuroiwa
发明人： Kazuma Tomizuka , Hitoshi Yoshida , Kazunori Hanaoka , Mitsuo Oshimura , Isao Ishida , Yoshimi Kuroiwa
CPC分类号： A01K67/0275 , A01K67/0271 , A01K67/0276 , A01K67/0278 , A01K2207/15 , A01K2217/00 , A01K2217/05 , A01K2217/075 , A01K2227/105 , A01K2267/01 , A01K2267/03 , C12N15/85 , C12N15/8509 , C12N15/873 , C12N15/90 , C12N15/907 , C12N2800/30
摘要： The present invention relates to a method for producing a modified foreign chromosome(s) or a fragment(s) thereof, which comprises the steps of: (a) preparing a microcell comprising a foreign chromosome(s) or a fragment(s) thereof, and transferring said foreign chromosome(s) or a fragment(s) into a cell with high homologous recombination efficiency through its fusion with said microcell; (b) in said cell with high homologous recombination efficiency, inserting a targeting vector by homologous recombination into a desired site of said foreign chromosome(s) or a fragment(s) thereof, and/or a desired site of a chromosome(s) derived from said cell with high homologous recombination efficiency, thereby marking said desired site; and (c) in said cell with high homologous recombination efficiency, causing deletion and/or translocation to occur at the marked site of said foreign chromosome(s) or a fragment(s) thereof.
摘要翻译： 本发明涉及一种生产修饰的外源染色体或其片段的方法，其包括以下步骤：（a）制备包含外来染色体或其片段的微细胞 并通过与所述微细胞融合将所述外源染色体或片段转移到具有高同源重组效率的细胞中; （b）在具有高同源重组效率的所述细胞中，通过同源重组将靶向载体插入所述外源染色体或其片段的所需位点和/或染色体的所需位点， 衍生自具有高同源重组效率的所述细胞，从而标记所述期望的位点; 和（c）在具有高同源重组效率的所述细胞中，导致在所述外源染色体或其片段的标记位点发生缺失和/或易位。
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公开(公告)号：US08110671B2
公开(公告)日：2012-02-07
申请号：US11797904
申请日：2007-05-08
IPC分类号： C07H21/04
CPC分类号： A01K67/0275 , A01K67/0271 , A01K67/0276 , A01K67/0278 , A01K2207/15 , A01K2217/00 , A01K2217/05 , A01K2217/075 , A01K2227/105 , A01K2267/01 , A01K2267/03 , C07K16/00 , C07K16/18 , C07K2317/21 , C12N15/8509 , C12N15/90 , C12N2517/02 , C12N2800/30
摘要： The specification relates to a method for producing a chimeric non-human animal, which comprises preparing a microcell containing a foreign chromosome(s) or a fragment(s) thereof and transferring the foreign chromosome(s) or fragment(s) thereof into a pluripotent cell by fusion with the microcell; a chimeric non-human animal which can be produced by the above method and its progeny; tissues and cells derived therefrom; and a method for using the same. Further, a pluripotent cell containing a foreign chromosome(s) or a fragment(s) thereof, a method for producing the same, and a method for using the same are also provided. Moreover, a pluripotent cell in which at least two endogenous genes are disrupted, and a method for producing the same by homologous recombination are provided.
摘要翻译： 本说明书涉及嵌合非人动物的制造方法，其包括制备含有外来染色体或其片段的微细胞，并将其外来的染色体或片段转移到 多细胞与微细胞融合; 可以通过上述方法及其后代产生的嵌合非人动物; 从其衍生的组织和细胞; 及其使用方法。 此外，还提供了含有外来染色体或其片段的多能细胞，其制备方法及其使用方法。 此外，提供其中至少两个内源基因被破坏的多能细胞，以及通过同源重组产生其的方法。
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9.发明授权公开(公告)号：US07476536B2
公开(公告)日：2009-01-13
申请号：US10477471
申请日：2002-05-10
申请人： Yoshimi Kuroiwa , Kazuma Tomizuka , Hitoshi Yoshida , Isao Ishida
发明人： Yoshimi Kuroiwa , Kazuma Tomizuka , Hitoshi Yoshida , Isao Ishida
CPC分类号： A01K67/0278 , A01K67/0275 , A01K67/0276 , A01K2207/15 , A01K2217/00 , A01K2217/05 , A01K2217/052 , A01K2217/054 , A01K2217/15 , A01K2227/105 , A01K2267/01 , A01K2267/0381 , A61K48/00 , A61K2039/505 , C07K16/00 , C07K16/243 , C07K2317/21 , C12N15/8509 , C12N15/87 , C12N15/90 , C12N2800/30
摘要： The present invention relates to a human artificial chromosome which is genetically transmissible to the next generation with high efficiency and the method for using the same. More specifically, the present invention relates to: a human artificial chromosome in which an about 3.5 Mb to about 1 Mb region containing an antibody λ light chain gene derived from human chromosome 22 is bound to a chromosome fragment which is transmissible to a progeny through a germ line of a non-human animal, said chromosome fragment is derived from another human chromosome; a non-human animal carrying the human artificial chromosome and an offspring thereof; a method for producing the non-human animal; a method for producing a human antibody using the non-human animal or an offspring thereof; and a human antibody-producing mouse carrying the human artificial chromosome.
摘要翻译： 本发明涉及一种以高效率遗传传播到下一代的人类人造染色体及其使用方法。 更具体地，本发明涉及：人类人造染色体，其中含有源自人染色体22的抗体λ轻链基因的约3.5Mb至约1Mb区域与染色体片段结合，所述染色体片段可通过 生殖系的非人类动物，所述染色体片段衍生自另一个人染色体; 携带人类人造染色体的非人类动物及其后代; 一种生产非人动物的方法; 使用非人动物或其后代生产人抗体的方法; 和携带人类人造染色体的人抗体生产小鼠。
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公开(公告)号：US20090007282A1
公开(公告)日：2009-01-01
申请号：US12116294
申请日：2008-05-07
申请人： Kazuma TOMIZUKA , Hitoshi Yoshida , Kazunori Hanaoka , Mitsuo Oshimura , Isao Ishida , Yoshimi Kuroiwa
发明人： Kazuma TOMIZUKA , Hitoshi Yoshida , Kazunori Hanaoka , Mitsuo Oshimura , Isao Ishida , Yoshimi Kuroiwa
IPC分类号： A01K67/027
CPC分类号： A01K67/0275 , A01K67/0271 , A01K67/0276 , A01K67/0278 , A01K2207/15 , A01K2217/00 , A01K2217/05 , A01K2217/075 , A01K2227/105 , A01K2267/01 , A01K2267/03 , C12N15/85 , C12N15/8509 , C12N15/873 , C12N15/90 , C12N15/907 , C12N2800/30
摘要： The present invention relates to a method for producing a modified foreign chromosome(s) or a fragment(s) thereof, which comprises the steps of: (a) preparing a microcell comprising a foreign chromosome(s) or a fragment(s) thereof, and transferring said foreign chromosome(s) or a fragment(s) into a cell with high homologous recombination efficiency through its fusion with said microcell; (b) in said cell with high homologous recombination efficiency, inserting a targeting vector by homologous recombination into a desired site of said foreign chromosome(s) or a fragment(s) thereof, and/or a desired site of a chromosome(s) derived from said cell with high homologous recombination efficiency, thereby marking said desired site; and (c) in said cell with high homologous recombination efficiency, causing deletion and/or translocation to occur at the marked site of said foreign chromosome(s) or a fragment(s) thereof.
摘要翻译： 本发明涉及一种生产修饰的外源染色体或其片段的方法，其包括以下步骤：（a）制备包含外来染色体或其片段的微细胞 并通过与所述微细胞融合将所述外源染色体或片段转移到具有高同源重组效率的细胞中; （b）在具有高同源重组效率的所述细胞中，通过同源重组将靶向载体插入所述外源染色体或其片段的所需位点和/或染色体的所需位点， 衍生自具有高同源重组效率的所述细胞，从而标记所述期望的位点; 和（c）在具有高同源重组效率的所述细胞中，导致在所述外源染色体或其片段的标记位点发生缺失和/或易位。
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