摘要:
An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface between the ferromagnetic layer and the antiferromagnetic layer, wherein the antiferromagnetic layer is composed of IrzMn100-z (wherein 2 atomic percent≦z≦80 atomic percent), the ferromagnetic layer has a two-layer structure including a CoyFe100-y layer having a face-centered cubic structure (wherein 80 atomic percent≦y≦100 atomic percent), the CoyFe100-y layer being in contact with the antiferromagnetic layer, and an FexCo100-x layer (wherein x≧30 atomic percent), the FexCo100-x layer being disposed on the CoyFe100-y layer, and the thickness of the FexCo100-x layer is 30% to 90% of the total thickness of the ferromagnetic layer.
摘要翻译:交换耦合膜包括铁磁层和反铁磁层,其铁磁层的磁化方向通过在铁磁层和反铁磁层之间的界面处产生的交换耦合磁场在一个方向上被钉扎,其中 反铁磁性层由贱金属100-z(其中2原子%<= z <= 80原子%)组成,铁磁层具有双层结构 包括具有面心立方结构(其中80原子%<= y <= 100原子百分比)的Co 100 sub> 100 sub> y + 100-y +层与反铁磁层接触,以及Fe x 100 Co + 100-x层(其中 x> = 30原子百分比),Fe 3 O 100-x层被设置在Co 100 Co 100-y SUB>层,并且Fe×100 Co层的厚度为30% 到铁磁层的总厚度的90%。
摘要:
A magnetic sensing element is provided in which the magnetization of a pinned magnetic layer is pinned by a uniaxial anisotropy of the pinned magnetic layer itself. A nonmagnetic layer for increasing the coercive force of the pinned magnetic layer is disposed adjacent to the pinned magnetic layer at the opposite side of a nonmagnetic conductive layer. Specifically, the nonmagnetic layer is composed of, for example, Cu. In addition, the thickness of the nonmagnetic layer is adequately controlled.
摘要:
An exchange-coupled film includes a ferromagnetic layer and an antiferromagnetic layer disposed on each other, the magnetization direction of the ferromagnetic layer being pinned in one direction by an exchange coupling magnetic field generated at the interface between the ferromagnetic layer and the antiferromagnetic layer, wherein the antiferromagnetic layer is composed of IrzMn100-z (wherein 2 atomic percent≦z≦80 atomic percent), the ferromagnetic layer has a two-layer structure including a CoyFe100-y layer having a face-centered cubic structure (wherein 80 atomic percent≦y≦100 atomic percent), the CoyFe100-y layer being in contact with the antiferromagnetic layer, and an FexCo100-x layer (wherein x≧30 atomic percent), the FexCo100-x layer being disposed on the CoyFe100-y layer, and the thickness of the FexCo100-x layer is 30% to 90% of the total thickness of the ferromagnetic layer.
摘要翻译:交换耦合膜包括铁磁层和反铁磁层,其铁磁层的磁化方向通过在铁磁层和反铁磁层之间的界面处产生的交换耦合磁场在一个方向上被钉扎,其中 反铁磁性层由贱金属100-z(其中2原子%<= z <= 80原子%)组成,铁磁层具有双层结构 包括具有面心立方结构(其中80原子%<= y <= 100原子百分比)的Co 100 sub> 100 sub> y + 100-y +层与反铁磁层接触,以及Fe x 100 Co + 100-x层(其中 x> = 30原子百分比),Fe 3 O 100-x层被设置在Co 100 Co 100-y SUB>层,并且Fe×100 Co层的厚度为30% 到铁磁层的总厚度的90%。
摘要:
A magnetic sensing element is provided in which the magnetization of a pinned magnetic layer is pinned by a uniaxial anisotropy of the pinned magnetic layer itself. A nonmagnetic layer for increasing the coercive force of the pinned magnetic layer is disposed adjacent to the pinned magnetic layer at the opposite side of a nonmagnetic conductive layer. Specifically, the nonmagnetic layer is composed of, for example, Cu. In addition, the thickness of the nonmagnetic layer is adequately controlled.
摘要:
An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译:下层由作为非晶磁性材料的Co-Fe-B组成。 因此,可以将下层的上表面作为下屏蔽层侧参考位置,以获得上屏蔽和下屏蔽之间的间隙长度(GL),导致与之前的间隙较窄。 此外,由于底层具有非晶结构,所以下层不会对要在其上形成的各层的结晶取向产生不利影响,并且下层的表面具有良好的平坦化性。 因此,PW50(半幅度脉冲宽度)和SN比可以比以前更多地改善,而不会导致电阻变化率(&Dgr; R / R)等的降低,从而实现适于提高记录密度的结构。
摘要:
A magnetic sensor uses a magnetoresistance element which can be driven in a stable manner with a dipole irrespective of a polarity of an external magnetic field. A resistance value R of first magnetoresistance elements varies, and a resistance value of second magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H1 in the positive direction. A resistance value R of second magnetoresistance elements varies and a resistance value of first magnetoresistance elements does not vary with a variation in magnetic field magnitude of the external magnetic field H2 in the negative direction. Accordingly, the magnetic sensor can be driven in a stable manner with a dipole irrespective of the polarity of the external magnetic field.
摘要:
An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
摘要:
A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.
摘要:
An exchange-coupled film includes a seed layer, an antiferromagnetic layer, and a ferromagnetic layer. The seed layer is formed at a thickness that is larger than the critical thickness, and the thickness of the seed layer is then decreased by etching so as to be smaller than or equal to the critical thickness. Thereby, a crystalline phase which extends through the seed layer from the upper surface to the lower surface can be formed, and/or the average size, in a direction parallel to the layer surface, of the crystal grains in the seed layer can be set to be larger than the thickness of the seed layer. Consequently, a large exchange coupling magnetic field Hex can be generated between the antiferromagnetic layer and the ferromagnetic layer.
摘要:
A CPP magnetic detecting element having a pinned magnetic layer whose magnetization is fixed by its uniaxial anisotropy in a structure that CIP magnetic detecting elements do not allow. In the CPP magnetic detecting element, the upper and lower surfaces of a pinned magnetic layer having an artificial ferrimagnetic structure are disposed between a magnetostriction-enhancing layer made of a nonmagnetic metal and a nonmagnetic material layer having a higher lattice constant than Cu. CPP magnetic detecting elements allow this structure without reducing the variation in resistance per unit area ΔR·A. Thus, the magnetostriction coefficient of the pinned magnetic layer can be increased from above and below, thereby more firmly fixing the magnetization of the pinned magnetic layer.