公开(公告)号：US20050006646A1

公开(公告)日：2005-01-13

申请号：US10856138

申请日：2004-05-28

申请人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

发明人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

IPC分类号： C30B13/00 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/78675

摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.

摘要翻译： 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于 对预测。 因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

公开(公告)号：US07189665B2

公开(公告)日：2007-03-13

申请号：US11293727

申请日：2005-12-02

申请人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

发明人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/78675

摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.

摘要翻译： 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有大致垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层厚度的约1/4的范围内的高度，以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于 对预测。 因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

公开(公告)号：US20060084246A1

公开(公告)日：2006-04-20

申请号：US11293727

申请日：2005-12-02

申请人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

发明人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/78675

摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.

摘要翻译： 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于 对预测。 因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

公开(公告)号：US06972246B2

公开(公告)日：2005-12-06

申请号：US10856138

申请日：2004-05-28

申请人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

发明人： Kazushi Nakano ,  Yukihisa Hitsuda ,  Toshio Fujino ,  Michinori Shiomi ,  Junichi Sato

IPC分类号： C30B13/00 ,  C30B29/06 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01S3/00

CPC分类号： H01L21/02686 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/045 ,  H01L29/78675

摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.

摘要翻译： 提供了包括多个半导体晶粒的结晶半导体材料的制造方法。 该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向 尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于 对预测。 因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

公开(公告)号：US07169690B2

公开(公告)日：2007-01-30

申请号：US11098846

申请日：2005-04-05

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US07144793B2

公开(公告)日：2006-12-05

申请号：US10645805

申请日：2003-08-21

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/20

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

公开(公告)号：US07538014B2

公开(公告)日：2009-05-26

申请号：US11553054

申请日：2006-10-26

申请人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Pal Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： H01L21/00

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US20070051302A1

公开(公告)日：2007-03-08

申请号：US11553054

申请日：2006-10-26

申请人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US20050172888A1

公开(公告)日：2005-08-11

申请号：US11098846

申请日：2005-04-05

申请人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

发明人： Dharam Gosain ,  Akio Machida ,  Kazushi Nakano ,  Toshio Fujino ,  Junichi Sato

IPC分类号： G02F1/1368 ,  C23C14/14 ,  C23C14/34 ,  C23C14/58 ,  C23C16/24 ,  C23C16/26 ,  C23C16/28 ,  C23C16/56 ,  C30B13/00 ,  C30B13/24 ,  G09G3/36 ,  H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B13/24 ,  C30B13/34 ,  C30B29/08 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/04

摘要： Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries.

摘要翻译： 公开了一种制造能够提高结晶度的结晶半导体材料的方法和使用该晶体半导体材料制造半导体器件的方法。 使用从XeCl准分子激光器发射的脉冲激光束（能量束）将非晶膜均匀地照射150次，以便在这样的温度下加热非晶膜，以便部分地熔化具有{100}取向的晶粒相对于 衬底的垂直方向和具有除{100}取向以外的面取向的熔融非晶膜或晶粒。 在氧化硅膜和液相硅之间新发生具有{100}取向的硅晶体并且彼此无规地结合，以重新形成具有{100}取向的晶粒。 重复这样的晶粒生成工序，形成相对于衬底的垂直方向在{100}取向上优先生长的晶粒，从而具有尖锐的方形晶粒边界的结晶膜。

公开(公告)号：US20080241981A1

公开(公告)日：2008-10-02

申请号：US12134698

申请日：2008-06-06

申请人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

发明人： Akio Machida ,  Toshio Fujino ,  Tadahiro Kono

IPC分类号： H01L21/00

CPC分类号： H01L29/04 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： A thin film semiconductor device is provided that includes a semiconductor thin film and a gate electrode. The semiconductor thin film has an active region turned into a polycrystalline region through irradiation with an energy beam. The gate electrode is provided to traverse the active region. In a channel part that is the active region overlapping with the gate electrode, a crystalline state is changed cyclically in a channel length direction, and areas each having a substantially same crystalline state traverse the channel part.

摘要翻译： 提供一种薄膜半导体器件，其包括半导体薄膜和栅电极。 半导体薄膜通过能量束的照射使有源区域变成多晶区域。 栅电极被设置为横越有源区。 在作为与栅电极重叠的有源区的沟道部分中，晶体状态在沟道长度方向上周期性地变化，并且各自具有基本相同结晶态的区域遍及沟道部分。