摘要:
The present invention relates to low alloy steel and specifically to nickel-chrome-molybdenum steel.A low alloy steel having excellent stress corrosion cracking resistance containing C:.ltoreq.0.40%, Si:.ltoreq.0.15%, Mn:.ltoreq.0.20%, P:.ltoreq.0.010%, S:.ltoreq.0.030%, Ni: 0.50 to 4.00%, Cr: 0.50 to 2.50%, Mo: 0.25 to 4.00% and V:.ltoreq.0.30%, said Si, Mn and P being fulfilled with relationship of Si+Mn+20P.ltoreq.0.30%, the remainder comprising Fe and unavoidable impurities, the prior austenite crystal grain size being in excess of 4 of ASTM crystal grain size number.
摘要:
A lubricant film which prevents galling or sliding metal surfaces comprising: a solid lubricant comprising 60-80% wt % of MoS.sub.2 or MoS.sub.2 +graphite; a lubricant additive comprising at least one component which comprises 10-30% wt % of Sb.sub.2 O.sub.3, Fe powder Zn powder or Ag powder; and an organic binder comprising 3-15% by weight of at least one component selected from the group consisting of epoxy ester resin, acrylic resin and urea resin.
摘要翻译:一种防止金属表面磨损或滑动的润滑剂膜,包括:包含60-80重量%的MoS 2或MoS 2 +石墨的固体润滑剂; 包含至少一种包含10-30重量%的Sb 2 O 3,Fe粉末Zn粉末或Ag粉末的组分的润滑剂添加剂; 和包含3-15重量%的至少一种选自环氧酯树脂,丙烯酸树脂和尿素树脂的组分的有机粘合剂。
摘要:
High Mn-Cr non-magnetic steel having good resistance to stress corrosion cracking, which consists essentially of the following elements in percentage by weight:0.05-0.18% of carbon;up to 1.0% of silicon;16-25% of manganese;14-17% of chromium;0-0.8% of vanadium0.3-0.6% of nitrogen;0.06-0.3% of nickel; andthe balance of iron and inevitable impurities.
摘要:
A nitrogen-containing dual phase stainless steel with high hot workability, containing in percentage by weight:less than 0.03% of C;0.3-2.0% of Si;0.4-4.0% of Mn;16-22% of Cr;4-7% of Ni;2-4% of Mo;0.06-0.20% of N;less than 0.005% of S;0.001-0.01% of Ca in a Ca/S ratio of greater than 1.5;andthe balance of iron and inevitable impurities.
摘要:
Disclosed herein is a high strength austenitic stainless steel with excellent corrosion resistance even in oxidative enviroments, and a method for producing such stainless steel, in which the kinds and proportions of the component elements are strictly restricted, especially limiting the contents of C and N to achieve solution strengthening while preventing degradations in corrosion resistance and defects of steel ingots which would be caused if they are added excessively. Besides, V is added under coexistence with Cr and Ni to increase the strength by precipitation of carbides and nitrides of V while preventing production of Cr carbides.
摘要:
A fluid dispersion obtained by mixing oxide particles and water is sprayed to a raw aluminum foil from a direction opposite to a travelling direction of the raw aluminum foil while the raw aluminum foil is allowed to travel. In this way, a roll-pressed mark of the raw aluminum foil is eliminated, and thus aluminum foil for aluminum electrolytic capacitor electrode is produced. Pyramidal-shaped recesses each having an acute angle tip are present all over a surface of the aluminum foil.
摘要:
An object of the present invention is to provide a solid-state image device that can effectively dissipate heat. In order to attain the object, the solid-state image device of the present invention includes non-through heat dissipation portions (7) provided on a semiconductor substrate (2). The non-through heat dissipation portion (7) is made up of a non-through hole and a metal embedded in the non-through hole. The non-through hole has one open end on one of the surfaces of the semiconductor substrate (2), extends from the one surface toward the other surface of the semiconductor substrate (2), and has the other end between the surfaces of the semiconductor substrate (2). The non-through heat dissipation portions (7) act as heat dissipation paths.
摘要:
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要:
A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要:
An optical filter module of the present invention has a flat substrate, an optical path formed on the flat substrate; a filter insertion groove provided, crossing the optical path, on the flat substrate; a multilayer filter inserted, dividing the optical path, into the filter insertion groove; and a pair of covers disposed on the flat substrate so as to sandwich the multilayer filter. The present invention enables the omission of the process of adjustment of the optical axis, thus achieving high operability. At the same time, the present invention ensures fixing and mounting of the multilayer filter even if the multilayer filter is warped.