摘要:
In an amorphous carbon film of a sliding member, provided that a number of nitrogen atoms each singly bonded to three carbon atoms is A, and a number of nitrogen atoms each singly and doubly bonded to two carbon atoms, respectively, is B, a value A/B of the amorphous carbon film obtained through X-ray photoelectron spectroscopy analysis is 10 to 18. The method includes irradiating the surface of the substrate with nitrogen ion beams and irradiating a carbon target with electron beams, thereby forming an amorphous carbon film on the surface of the substrate while vapor-depositing a part of the carbon target onto the surface of the substrate. The output of the electron beams that irradiate the carbon target is 30 to 50 W.
摘要:
This invention provides a process and apparatus for producing a carbonaceous film such as a DLC film using a solid raw material without the need to supply a high energy radiation such as a laser beam. The process comprises providing a solid organic material as a raw material, applying a discharge energy to the material to form plasma, and depositing the plasma onto a base material to form a carbonaceous film. This process is preferably carried out by using a film production apparatus (1) comprising discharge means (10). The discharge means (10) comprises a pair of electrodes (a raw material holder) (12, 14) for holding a raw material (50) and voltage applying means (20) for applying voltage across the electrodes.
摘要:
To generate plasma inside a tube of a small opening diameter and perform plasma processing inside the tube.A plasma processing device 2 is formed by a chamber (4) and a microwave generation device (6). A microwave is introduced into the chamber via a quartz tube (16). A tube holder (18) is arranged inside the quartz tube (16). Two holes are formed in the side surface of the tube holder (18). A tube (20) of a small opening diameter is fixed to the end of the tube holder (18).
摘要:
To generate plasma inside a tube of a small opening diameter and perform plasma processing inside the tube. A plasma processing device 2 is formed by a chamber (4) and a microwave generation device (6). A microwave is introduced into the chamber via a quartz tube (16). A tube holder (18) is arranged inside the quartz tube (16). Two holes are formed in the side surface of the tube holder (18). A tube (20) of a small opening diameter is fixed to the end of the tube holder (18).
摘要:
The present invention provides a process for preparing N-methylated melamines in simple steps by using inexpensive raw materials in such a manner that the proportion of mono-type, bis-type and tris-type of the N-methylated melamines as prepared can be controlled. The process comprises reacting by heating melamine with methylamine in the presence of an acidic catalyst under pressure to substitute at least one amino group of the melamine by methylamino group.
摘要:
The present invention provides a method for modifying melamine derivatives that can produce N-substituted melamine derivatives by introducing a substituent group to melamine or N-substituted melamine derivatives. The method is characterized by heating melamine or an N-substituted melamine derivative and an alcohol in the presence of a mixed catalyst comprising a hydrogenation catalyst and a dehydrogenation catalyst and hydrogen to allow reaction or heating melamine or an N-substituted melamine derivative and an alcohol in the presence of a hydrogenation catalyst and hydrogen with addition/coexistence of a metal to allow reaction. The compound groups obtained by introducing a substituent group to the amino group of melamine derivative with an alcohol by the method of the present invention can be used widely as intermediates of fine chemicals such as various agricultural chemicals, medicines, dyes, paints, etc. and as various resin materials and flame retardant materials.
摘要:
A plurality of concentric ring-shaped slots (300) to (304) are formed in a planar antenna member (3), and the thickness of conductors in the central part is made relatively thin and the thickness of peripheral conductors is made relatively thick, so that a microwave can easily pass through the slots (300) to (304) without being attenuated, and a uniform electric field distribution can be provided and uniform high-density plasma can be generated in a processing space on an average. As a result, an object to be processed can be provided close to the antenna member (3) and the object can be uniformly processed at high speed.
摘要:
A production method of an isoxazoline-substituted benzoic acid amide compound of Formula (1) where X is a halogen atom, C1-6 haloalkyl, etc., Y is a halogen atom, C1-6 alkyl, etc., R1 is a C1-6 haloalkyl, etc., R2 and R3 independently of each other are a hydrogen atom, C1-6 alkyl, etc., R4 is C1-6 alkyl, C1-6 haloalkyl, etc., R5 is a hydrogen atom, c1-6 alkyl, etc., m is an integer of 0 to 5, n is an integer of 0 to 4, including: reacting an isoxazoline-substituted benzene compound of Formula (3) where X, Y, R1, m, and n are the same as defined above, L is a chlorine atom, a bromine atom, —C(O)OH, —C(O)J, etc., J is a halogen atom, with a 2-aminoacetic acid amide compound of Formula (2) where R2, R3, R4, and R5 are the same as defined above, or a salt thereof; crystal forms and the production method thereof.
摘要:
A production method of an isoxazoline-substituted benzoic acid amide compound of Formula (1) where X is a halogen atom, C1-6 haloalkyl, etc., Y is a halogen atom, C1-6 alkyl, etc., R1 is a C1-6 haloalkyl, etc., R2 and R3 independently of each other are a hydrogen atom, C1-6 alkyl, etc., R4 is C1-6 alkyl, C1-6 haloalkyl, etc., R5 is a hydrogen atom, c1-6 alkyl, etc., m is an integer of 0 to 5, n is an integer of 0 to 4, including: reacting an isoxazoline-substituted benzene compound of Formula (3) where X, Y, R1, m, and n are the same as defined above, L is a chlorine atom, a bromine atom, —C(O)OH, —C(O)J, etc., J is a halogen atom, with a 2-aminoacetic acid amide compound of Formula (2) where R2, R3, R4, and R5 are the same as defined above, or a salt thereof; crystal forms and the production method thereof.
摘要:
A disclosed plasma process apparatus includes an electromagnetic wave generator that generates electromagnetic waves; a vacuum vessel configured to be hermetically connected with an object to be processed, and evacuated to reduced pressures along with the object to be processed hermetically connected to the vacuum vessel; an electromagnetic wave guiding portion configured to guide the electromagnetic waves generated by the electromagnetic wave generator so that plasma is ignited in the vacuum vessel; a gas supplying portion configured to supply a process gas to the object to be processed hermetically connected to the vacuum vessel; an evacuation portion configured to evacuate the object to be processed hermetically connected to the vacuum vessel; and a voltage source configured to apply a predetermined voltage to the object to be processed hermetically connected to the vacuum vessel so that the plasma ignited in the vacuum vessel is guided to the object to be processed.